JP5178046B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5178046B2 JP5178046B2 JP2007120554A JP2007120554A JP5178046B2 JP 5178046 B2 JP5178046 B2 JP 5178046B2 JP 2007120554 A JP2007120554 A JP 2007120554A JP 2007120554 A JP2007120554 A JP 2007120554A JP 5178046 B2 JP5178046 B2 JP 5178046B2
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- pulse laser
- surface layer
- layer portion
- pulse
- auxiliary heating
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- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims 7
- 238000010438 heat treatment Methods 0.000 claims description 120
- 239000002344 surface layer Substances 0.000 claims description 82
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- 239000000758 substrate Substances 0.000 claims description 41
- 150000002500 ions Chemical class 0.000 claims description 28
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- 238000005224 laser annealing Methods 0.000 description 32
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- 238000009792 diffusion process Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
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- 239000007787 solid Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 238000002076 thermal analysis method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
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- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
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- 240000000220 Panda oleosa Species 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
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- 230000001151 other effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- YDLQKLWVKKFPII-UHFFFAOYSA-N timiperone Chemical compound C1=CC(F)=CC=C1C(=O)CCCN1CCC(N2C(NC3=CC=CC=C32)=S)CC1 YDLQKLWVKKFPII-UHFFFAOYSA-N 0.000 description 1
- 229950000809 timiperone Drugs 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007120554A JP5178046B2 (ja) | 2007-05-01 | 2007-05-01 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007120554A JP5178046B2 (ja) | 2007-05-01 | 2007-05-01 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008277599A JP2008277599A (ja) | 2008-11-13 |
| JP2008277599A5 JP2008277599A5 (enExample) | 2010-05-27 |
| JP5178046B2 true JP5178046B2 (ja) | 2013-04-10 |
Family
ID=40055194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007120554A Expired - Fee Related JP5178046B2 (ja) | 2007-05-01 | 2007-05-01 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5178046B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8461033B2 (en) | 2009-01-13 | 2013-06-11 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and method for heating substrate by light-irradiation |
| JP5828997B2 (ja) * | 2009-01-13 | 2015-12-09 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法および熱処理装置 |
| JP5828998B2 (ja) * | 2009-02-18 | 2015-12-09 | 株式会社Ｓｃｒｅｅｎホールディングス | 半導体素子の製造方法 |
| JP2011071261A (ja) * | 2009-09-25 | 2011-04-07 | Ushio Inc | レーザーアニール装置 |
| JP5556431B2 (ja) | 2010-06-24 | 2014-07-23 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP5595152B2 (ja) * | 2010-07-14 | 2014-09-24 | 住友重機械工業株式会社 | レーザアニール方法 |
| JP5786557B2 (ja) * | 2011-08-25 | 2015-09-30 | 株式会社Sumco | シミュレーションによるレーザースパイクアニールを施す際に生じる酸素析出物からの発生転位予測方法 |
| CN116913768B (zh) * | 2023-09-14 | 2023-12-05 | 中国科学院半导体研究所 | 多次脉冲亚熔化准分子激光退火方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3065825B2 (ja) * | 1992-10-21 | 2000-07-17 | 株式会社半導体エネルギー研究所 | レーザー処理方法 |
| JPH07335586A (ja) * | 1994-04-13 | 1995-12-22 | Toshiba Corp | レーザ熱処理方法およびその装置 |
| KR100839259B1 (ko) * | 2000-03-17 | 2008-06-17 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 레이저 어닐링 및 급속 열적 어닐링에 의한 울트라샬로우접합 형성 방법 |
| JP4207488B2 (ja) * | 2002-08-02 | 2009-01-14 | ウシオ電機株式会社 | 光加熱装置 |
| JP2005167005A (ja) * | 2003-12-03 | 2005-06-23 | Semiconductor Leading Edge Technologies Inc | 半導体基板の熱処理方法、半導体装置の製造方法、及び熱処理装置 |
| JP4614747B2 (ja) * | 2004-11-30 | 2011-01-19 | 住友重機械工業株式会社 | 半導体装置の製造方法 |
| US7943534B2 (en) * | 2005-08-03 | 2011-05-17 | Phoeton Corp. | Semiconductor device manufacturing method and semiconductor device manufacturing system |
-
2007
- 2007-05-01 JP JP2007120554A patent/JP5178046B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008277599A (ja) | 2008-11-13 |
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