JP5171003B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5171003B2 JP5171003B2 JP2006260488A JP2006260488A JP5171003B2 JP 5171003 B2 JP5171003 B2 JP 5171003B2 JP 2006260488 A JP2006260488 A JP 2006260488A JP 2006260488 A JP2006260488 A JP 2006260488A JP 5171003 B2 JP5171003 B2 JP 5171003B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- conductive
- wiring
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006260488A JP5171003B2 (ja) | 2005-01-28 | 2006-09-26 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005022248 | 2005-01-28 | ||
| JP2005022248 | 2005-01-28 | ||
| JP2006260488A JP5171003B2 (ja) | 2005-01-28 | 2006-09-26 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006017052A Division JP4761981B2 (ja) | 2005-01-28 | 2006-01-26 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012235918A Division JP5707373B2 (ja) | 2005-01-28 | 2012-10-25 | 液晶表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007059925A JP2007059925A (ja) | 2007-03-08 |
| JP2007059925A5 JP2007059925A5 (enExample) | 2008-10-16 |
| JP5171003B2 true JP5171003B2 (ja) | 2013-03-27 |
Family
ID=37923068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006260488A Expired - Fee Related JP5171003B2 (ja) | 2005-01-28 | 2006-09-26 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5171003B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4759598B2 (ja) * | 2007-09-28 | 2011-08-31 | キヤノン株式会社 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
| JP5553189B2 (ja) * | 2008-04-09 | 2014-07-16 | 独立行政法人産業技術総合研究所 | 素子用電極およびその製造方法と、該素子用電極を備えた電子デバイス |
| JP5510767B2 (ja) * | 2008-06-19 | 2014-06-04 | 出光興産株式会社 | 薄膜トランジスタおよびその製造方法 |
| WO2010032602A1 (en) * | 2008-09-18 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN111081550A (zh) | 2009-06-30 | 2020-04-28 | 株式会社半导体能源研究所 | 用于制造半导体器件的方法及半导体器件 |
| JP5709540B2 (ja) * | 2011-01-14 | 2015-04-30 | 三菱重工業株式会社 | 有機el素子の製造方法 |
| JP5818441B2 (ja) * | 2011-01-14 | 2015-11-18 | 三菱重工業株式会社 | 照明用有機el素子の製造方法 |
| JP7076092B2 (ja) * | 2018-01-19 | 2022-05-27 | 旭化成株式会社 | 紫外線受光素子及び紫外線受光素子の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3322738B2 (ja) * | 1993-12-08 | 2002-09-09 | 株式会社半導体エネルギー研究所 | 半導体装置及び集積回路ならびに表示装置 |
| JP3383129B2 (ja) * | 1995-07-20 | 2003-03-04 | 宮城沖電気株式会社 | 半導体装置の配線構造 |
| JP2003059940A (ja) * | 2001-08-08 | 2003-02-28 | Fuji Photo Film Co Ltd | ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法 |
| JP4839551B2 (ja) * | 2001-09-12 | 2011-12-21 | パナソニック株式会社 | 有機el表示装置 |
| JP4742487B2 (ja) * | 2003-05-09 | 2011-08-10 | セイコーエプソン株式会社 | 膜パターン形成方法 |
-
2006
- 2006-09-26 JP JP2006260488A patent/JP5171003B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007059925A (ja) | 2007-03-08 |
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