JP5166291B2 - ノッチ付き堆積リング - Google Patents
ノッチ付き堆積リング Download PDFInfo
- Publication number
- JP5166291B2 JP5166291B2 JP2008558498A JP2008558498A JP5166291B2 JP 5166291 B2 JP5166291 B2 JP 5166291B2 JP 2008558498 A JP2008558498 A JP 2008558498A JP 2008558498 A JP2008558498 A JP 2008558498A JP 5166291 B2 JP5166291 B2 JP 5166291B2
- Authority
- JP
- Japan
- Prior art keywords
- wall
- main body
- ring
- kit according
- processing kit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/369,884 US7520969B2 (en) | 2006-03-07 | 2006-03-07 | Notched deposition ring |
| US11/369,884 | 2006-03-07 | ||
| PCT/US2007/063353 WO2007103902A2 (en) | 2006-03-07 | 2007-03-06 | Notched deposition ring |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009529249A JP2009529249A (ja) | 2009-08-13 |
| JP2009529249A5 JP2009529249A5 (enExample) | 2011-08-25 |
| JP5166291B2 true JP5166291B2 (ja) | 2013-03-21 |
Family
ID=38475786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008558498A Active JP5166291B2 (ja) | 2006-03-07 | 2007-03-06 | ノッチ付き堆積リング |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7520969B2 (enExample) |
| JP (1) | JP5166291B2 (enExample) |
| KR (1) | KR101007833B1 (enExample) |
| CN (1) | CN101405431B (enExample) |
| TW (1) | TWI365487B (enExample) |
| WO (1) | WO2007103902A2 (enExample) |
Families Citing this family (98)
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| US20060237043A1 (en) * | 2005-04-25 | 2006-10-26 | Applied Materials, Inc. | Method and apparatus for cleaning semiconductor substrates |
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| US8647484B2 (en) * | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
| US8062487B2 (en) * | 2007-06-25 | 2011-11-22 | United Microelectronics Corp. | Wafer supporting device of a sputtering apparatus |
| US20090050272A1 (en) * | 2007-08-24 | 2009-02-26 | Applied Materials, Inc. | Deposition ring and cover ring to extend process components life and performance for process chambers |
| US7767572B2 (en) * | 2008-02-21 | 2010-08-03 | Applied Materials, Inc. | Methods of forming a barrier layer in an interconnect structure |
| US7618893B2 (en) * | 2008-03-04 | 2009-11-17 | Applied Materials, Inc. | Methods of forming a layer for barrier applications in an interconnect structure |
| US9062379B2 (en) | 2008-04-16 | 2015-06-23 | Applied Materials, Inc. | Wafer processing deposition shielding components |
| KR101571558B1 (ko) * | 2008-04-16 | 2015-11-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 프로세싱 증착 차폐 컴포넌트들 |
| WO2009135050A2 (en) | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | Process kit for rf physical vapor deposition |
| JP5194315B2 (ja) * | 2008-07-04 | 2013-05-08 | 株式会社昭和真空 | スパッタリング装置 |
| US20100151676A1 (en) * | 2008-12-16 | 2010-06-17 | Applied Materials, Inc. | Densification process for titanium nitride layer for submicron applications |
| US8900471B2 (en) * | 2009-02-27 | 2014-12-02 | Applied Materials, Inc. | In situ plasma clean for removal of residue from pedestal surface without breaking vacuum |
| US8740206B2 (en) * | 2010-01-27 | 2014-06-03 | Applied Materials, Inc. | Life enhancement of ring assembly in semiconductor manufacturing chambers |
| KR20130095276A (ko) * | 2010-08-20 | 2013-08-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 수명이 연장된 증착 링 |
| US8744250B2 (en) * | 2011-02-23 | 2014-06-03 | Applied Materials, Inc. | Edge ring for a thermal processing chamber |
| US8642473B2 (en) | 2011-03-04 | 2014-02-04 | Applied Materials, Inc. | Methods for contact clean |
| US9905443B2 (en) * | 2011-03-11 | 2018-02-27 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporating same |
| JP2012221979A (ja) * | 2011-04-04 | 2012-11-12 | Toshiba Corp | プラズマ処理装置 |
| JP5654939B2 (ja) * | 2011-04-20 | 2015-01-14 | 株式会社アルバック | 成膜装置 |
| US8912096B2 (en) | 2011-04-28 | 2014-12-16 | Applied Materials, Inc. | Methods for precleaning a substrate prior to metal silicide fabrication process |
| US9218961B2 (en) | 2011-09-19 | 2015-12-22 | Applied Materials, Inc. | Methods of forming a metal containing layer on a substrate with high uniformity and good profile control |
| US8927423B2 (en) | 2011-12-16 | 2015-01-06 | Applied Materials, Inc. | Methods for annealing a contact metal layer to form a metal silicidation layer |
| JP5843602B2 (ja) * | 2011-12-22 | 2016-01-13 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
| US8586479B2 (en) | 2012-01-23 | 2013-11-19 | Applied Materials, Inc. | Methods for forming a contact metal layer in semiconductor devices |
| USD665491S1 (en) * | 2012-01-25 | 2012-08-14 | Applied Materials, Inc. | Deposition chamber cover ring |
| US9330939B2 (en) | 2012-03-28 | 2016-05-03 | Applied Materials, Inc. | Method of enabling seamless cobalt gap-fill |
| US9682398B2 (en) * | 2012-03-30 | 2017-06-20 | Applied Materials, Inc. | Substrate processing system having susceptorless substrate support with enhanced substrate heating control |
| US9376752B2 (en) * | 2012-04-06 | 2016-06-28 | Applied Materials, Inc. | Edge ring for a deposition chamber |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10727092B2 (en) * | 2012-10-17 | 2020-07-28 | Applied Materials, Inc. | Heated substrate support ring |
| JP6056403B2 (ja) * | 2012-11-15 | 2017-01-11 | 東京エレクトロン株式会社 | 成膜装置 |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US20150001180A1 (en) * | 2013-06-28 | 2015-01-01 | Applied Materials, Inc. | Process kit for edge critical dimension uniformity control |
| US9543163B2 (en) | 2013-08-20 | 2017-01-10 | Applied Materials, Inc. | Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process |
| TWI633604B (zh) | 2013-09-27 | 2018-08-21 | 美商應用材料股份有限公司 | 實現無縫鈷間隙塡充之方法 |
| US9508561B2 (en) | 2014-03-11 | 2016-11-29 | Applied Materials, Inc. | Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications |
| US9528185B2 (en) | 2014-08-22 | 2016-12-27 | Applied Materials, Inc. | Plasma uniformity control by arrays of unit cell plasmas |
| US11637002B2 (en) * | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| KR102709082B1 (ko) * | 2015-07-03 | 2024-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 높은 증착 링 및 증착 링 클램프를 갖는 프로세스 키트 |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10103012B2 (en) | 2015-09-11 | 2018-10-16 | Applied Materials, Inc. | One-piece process kit shield for reducing the impact of an electric field near the substrate |
| US9953812B2 (en) | 2015-10-06 | 2018-04-24 | Applied Materials, Inc. | Integrated process kit for a substrate processing chamber |
| CN106637124B (zh) * | 2015-10-30 | 2019-03-12 | 北京北方华创微电子装备有限公司 | 用于物理气相沉积的沉积环和物理气相沉积设备 |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| KR102161986B1 (ko) * | 2016-07-06 | 2020-10-06 | 가부시키가이샤 아루박 | 성막 장치, 플래턴 링 |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US20180122670A1 (en) * | 2016-11-01 | 2018-05-03 | Varian Semiconductor Equipment Associates, Inc. | Removable substrate plane structure ring |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| CN117936417A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
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| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11056325B2 (en) | 2017-12-20 | 2021-07-06 | Applied Materials, Inc. | Methods and apparatus for substrate edge uniformity |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
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| JP7239598B2 (ja) | 2018-03-09 | 2023-03-14 | アプライド マテリアルズ インコーポレイテッド | 金属含有材料の高圧アニーリングプロセス |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
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| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| CN109402593A (zh) * | 2018-11-02 | 2019-03-01 | 上海华力微电子有限公司 | 一种防止沉积环电弧放电的方法及沉积环 |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
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| USD888903S1 (en) * | 2018-12-17 | 2020-06-30 | Applied Materials, Inc. | Deposition ring for physical vapor deposition chamber |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
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| WO2021262583A1 (en) * | 2020-06-25 | 2021-12-30 | Lam Research Corporation | Carrier rings with radially-varied plasma impedance |
| USD1038049S1 (en) | 2020-11-18 | 2024-08-06 | Applied Materials, Inc. | Cover ring for use in semiconductor processing chamber |
| US12100579B2 (en) * | 2020-11-18 | 2024-09-24 | Applied Materials, Inc. | Deposition ring for thin substrate handling via edge clamping |
| US11996315B2 (en) | 2020-11-18 | 2024-05-28 | Applied Materials, Inc. | Thin substrate handling via edge clamping |
| CN114763602B (zh) * | 2021-01-13 | 2023-09-29 | 台湾积体电路制造股份有限公司 | 晶圆处理设备与制造半导体装置的方法 |
| TWI804827B (zh) * | 2021-03-22 | 2023-06-11 | 台灣積體電路製造股份有限公司 | 物理氣相沉積反應室及其使用方法 |
| US11915918B2 (en) | 2021-06-29 | 2024-02-27 | Applied Materials, Inc. | Cleaning of sin with CCP plasma or RPS clean |
| USD1071886S1 (en) * | 2022-01-20 | 2025-04-22 | Applied Materials, Inc. | Substrate support for a substrate processing chamber |
| DE102022000936A1 (de) * | 2022-03-17 | 2023-09-21 | Singulus Technologies Aktiengesellschaft | Beschichtungsmodul mit verbesserter Kathodenanordnung |
| US12371790B2 (en) * | 2022-08-17 | 2025-07-29 | Sky Tech Inc. | Wafer carrier with adjustable alignment devices and deposition equipment using the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262029A (en) | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
| US5447570A (en) | 1990-04-23 | 1995-09-05 | Genus, Inc. | Purge gas in wafer coating area selection |
| EP0493089B1 (en) | 1990-12-25 | 1998-09-16 | Ngk Insulators, Ltd. | Wafer heating apparatus and method for producing the same |
| US5803977A (en) | 1992-09-30 | 1998-09-08 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| US6051122A (en) | 1997-08-21 | 2000-04-18 | Applied Materials, Inc. | Deposition shield assembly for a semiconductor wafer processing system |
| US6039836A (en) * | 1997-12-19 | 2000-03-21 | Lam Research Corporation | Focus rings |
| US6423636B1 (en) * | 1999-11-19 | 2002-07-23 | Applied Materials, Inc. | Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer |
| US6797131B2 (en) * | 2002-11-12 | 2004-09-28 | Applied Materials, Inc. | Design of hardware features to facilitate arc-spray coating applications and functions |
| CN2688723Y (zh) * | 2004-03-16 | 2005-03-30 | 茂德科技股份有限公司 | 沉积环及应用此沉积环的支撑装置 |
-
2006
- 2006-03-07 US US11/369,884 patent/US7520969B2/en active Active
-
2007
- 2007-03-06 CN CN2007800100008A patent/CN101405431B/zh active Active
- 2007-03-06 KR KR1020087024410A patent/KR101007833B1/ko active Active
- 2007-03-06 JP JP2008558498A patent/JP5166291B2/ja active Active
- 2007-03-06 WO PCT/US2007/063353 patent/WO2007103902A2/en not_active Ceased
- 2007-03-07 TW TW096107916A patent/TWI365487B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007103902A3 (en) | 2008-10-30 |
| US20070209931A1 (en) | 2007-09-13 |
| KR20090005317A (ko) | 2009-01-13 |
| CN101405431A (zh) | 2009-04-08 |
| CN101405431B (zh) | 2011-11-30 |
| WO2007103902A2 (en) | 2007-09-13 |
| JP2009529249A (ja) | 2009-08-13 |
| US7520969B2 (en) | 2009-04-21 |
| TW200737305A (en) | 2007-10-01 |
| TWI365487B (en) | 2012-06-01 |
| KR101007833B1 (ko) | 2011-01-13 |
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