CN101405431B - 有凹口的沉积环 - Google Patents

有凹口的沉积环 Download PDF

Info

Publication number
CN101405431B
CN101405431B CN2007800100008A CN200780010000A CN101405431B CN 101405431 B CN101405431 B CN 101405431B CN 2007800100008 A CN2007800100008 A CN 2007800100008A CN 200780010000 A CN200780010000 A CN 200780010000A CN 101405431 B CN101405431 B CN 101405431B
Authority
CN
China
Prior art keywords
wall
ring
treatment kit
main body
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2007800100008A
Other languages
English (en)
Chinese (zh)
Other versions
CN101405431A (zh
Inventor
K·A·米勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101405431A publication Critical patent/CN101405431A/zh
Application granted granted Critical
Publication of CN101405431B publication Critical patent/CN101405431B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN2007800100008A 2006-03-07 2007-03-06 有凹口的沉积环 Active CN101405431B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/369,884 US7520969B2 (en) 2006-03-07 2006-03-07 Notched deposition ring
US11/369,884 2006-03-07
PCT/US2007/063353 WO2007103902A2 (en) 2006-03-07 2007-03-06 Notched deposition ring

Publications (2)

Publication Number Publication Date
CN101405431A CN101405431A (zh) 2009-04-08
CN101405431B true CN101405431B (zh) 2011-11-30

Family

ID=38475786

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800100008A Active CN101405431B (zh) 2006-03-07 2007-03-06 有凹口的沉积环

Country Status (6)

Country Link
US (1) US7520969B2 (enExample)
JP (1) JP5166291B2 (enExample)
KR (1) KR101007833B1 (enExample)
CN (1) CN101405431B (enExample)
TW (1) TWI365487B (enExample)
WO (1) WO2007103902A2 (enExample)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060237043A1 (en) * 2005-04-25 2006-10-26 Applied Materials, Inc. Method and apparatus for cleaning semiconductor substrates
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US8062487B2 (en) * 2007-06-25 2011-11-22 United Microelectronics Corp. Wafer supporting device of a sputtering apparatus
US20090050272A1 (en) * 2007-08-24 2009-02-26 Applied Materials, Inc. Deposition ring and cover ring to extend process components life and performance for process chambers
US7767572B2 (en) * 2008-02-21 2010-08-03 Applied Materials, Inc. Methods of forming a barrier layer in an interconnect structure
US7618893B2 (en) * 2008-03-04 2009-11-17 Applied Materials, Inc. Methods of forming a layer for barrier applications in an interconnect structure
US9062379B2 (en) 2008-04-16 2015-06-23 Applied Materials, Inc. Wafer processing deposition shielding components
KR101571558B1 (ko) * 2008-04-16 2015-11-24 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
WO2009135050A2 (en) 2008-05-02 2009-11-05 Applied Materials, Inc. Process kit for rf physical vapor deposition
JP5194315B2 (ja) * 2008-07-04 2013-05-08 株式会社昭和真空 スパッタリング装置
US20100151676A1 (en) * 2008-12-16 2010-06-17 Applied Materials, Inc. Densification process for titanium nitride layer for submicron applications
US8900471B2 (en) * 2009-02-27 2014-12-02 Applied Materials, Inc. In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
US8740206B2 (en) * 2010-01-27 2014-06-03 Applied Materials, Inc. Life enhancement of ring assembly in semiconductor manufacturing chambers
KR20130095276A (ko) * 2010-08-20 2013-08-27 어플라이드 머티어리얼스, 인코포레이티드 수명이 연장된 증착 링
US8744250B2 (en) * 2011-02-23 2014-06-03 Applied Materials, Inc. Edge ring for a thermal processing chamber
US8642473B2 (en) 2011-03-04 2014-02-04 Applied Materials, Inc. Methods for contact clean
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
JP2012221979A (ja) * 2011-04-04 2012-11-12 Toshiba Corp プラズマ処理装置
JP5654939B2 (ja) * 2011-04-20 2015-01-14 株式会社アルバック 成膜装置
US8912096B2 (en) 2011-04-28 2014-12-16 Applied Materials, Inc. Methods for precleaning a substrate prior to metal silicide fabrication process
US9218961B2 (en) 2011-09-19 2015-12-22 Applied Materials, Inc. Methods of forming a metal containing layer on a substrate with high uniformity and good profile control
US8927423B2 (en) 2011-12-16 2015-01-06 Applied Materials, Inc. Methods for annealing a contact metal layer to form a metal silicidation layer
JP5843602B2 (ja) * 2011-12-22 2016-01-13 キヤノンアネルバ株式会社 プラズマ処理装置
US8586479B2 (en) 2012-01-23 2013-11-19 Applied Materials, Inc. Methods for forming a contact metal layer in semiconductor devices
USD665491S1 (en) * 2012-01-25 2012-08-14 Applied Materials, Inc. Deposition chamber cover ring
US9330939B2 (en) 2012-03-28 2016-05-03 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
US9682398B2 (en) * 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US9376752B2 (en) * 2012-04-06 2016-06-28 Applied Materials, Inc. Edge ring for a deposition chamber
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
JP6056403B2 (ja) * 2012-11-15 2017-01-11 東京エレクトロン株式会社 成膜装置
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US20150001180A1 (en) * 2013-06-28 2015-01-01 Applied Materials, Inc. Process kit for edge critical dimension uniformity control
US9543163B2 (en) 2013-08-20 2017-01-10 Applied Materials, Inc. Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process
TWI633604B (zh) 2013-09-27 2018-08-21 美商應用材料股份有限公司 實現無縫鈷間隙塡充之方法
US9508561B2 (en) 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US9528185B2 (en) 2014-08-22 2016-12-27 Applied Materials, Inc. Plasma uniformity control by arrays of unit cell plasmas
US11637002B2 (en) * 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
KR102709082B1 (ko) * 2015-07-03 2024-09-23 어플라이드 머티어리얼스, 인코포레이티드 높은 증착 링 및 증착 링 클램프를 갖는 프로세스 키트
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10103012B2 (en) 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
US9953812B2 (en) 2015-10-06 2018-04-24 Applied Materials, Inc. Integrated process kit for a substrate processing chamber
CN106637124B (zh) * 2015-10-30 2019-03-12 北京北方华创微电子装备有限公司 用于物理气相沉积的沉积环和物理气相沉积设备
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
KR102161986B1 (ko) * 2016-07-06 2020-10-06 가부시키가이샤 아루박 성막 장치, 플래턴 링
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US20180122670A1 (en) * 2016-11-01 2018-05-03 Varian Semiconductor Equipment Associates, Inc. Removable substrate plane structure ring
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
CN117936417A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11056325B2 (en) 2017-12-20 2021-07-06 Applied Materials, Inc. Methods and apparatus for substrate edge uniformity
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
JP7239598B2 (ja) 2018-03-09 2023-03-14 アプライド マテリアルズ インコーポレイテッド 金属含有材料の高圧アニーリングプロセス
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
CN109402593A (zh) * 2018-11-02 2019-03-01 上海华力微电子有限公司 一种防止沉积环电弧放电的方法及沉积环
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11551965B2 (en) 2018-12-07 2023-01-10 Applied Materials, Inc. Apparatus to reduce polymers deposition
US11961723B2 (en) 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
USD888903S1 (en) * 2018-12-17 2020-06-30 Applied Materials, Inc. Deposition ring for physical vapor deposition chamber
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
WO2021262583A1 (en) * 2020-06-25 2021-12-30 Lam Research Corporation Carrier rings with radially-varied plasma impedance
USD1038049S1 (en) 2020-11-18 2024-08-06 Applied Materials, Inc. Cover ring for use in semiconductor processing chamber
US12100579B2 (en) * 2020-11-18 2024-09-24 Applied Materials, Inc. Deposition ring for thin substrate handling via edge clamping
US11996315B2 (en) 2020-11-18 2024-05-28 Applied Materials, Inc. Thin substrate handling via edge clamping
CN114763602B (zh) * 2021-01-13 2023-09-29 台湾积体电路制造股份有限公司 晶圆处理设备与制造半导体装置的方法
TWI804827B (zh) * 2021-03-22 2023-06-11 台灣積體電路製造股份有限公司 物理氣相沉積反應室及其使用方法
US11915918B2 (en) 2021-06-29 2024-02-27 Applied Materials, Inc. Cleaning of sin with CCP plasma or RPS clean
USD1071886S1 (en) * 2022-01-20 2025-04-22 Applied Materials, Inc. Substrate support for a substrate processing chamber
DE102022000936A1 (de) * 2022-03-17 2023-09-21 Singulus Technologies Aktiengesellschaft Beschichtungsmodul mit verbesserter Kathodenanordnung
US12371790B2 (en) * 2022-08-17 2025-07-29 Sky Tech Inc. Wafer carrier with adjustable alignment devices and deposition equipment using the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
CN1500906A (zh) * 2002-11-12 2004-06-02 Ӧ�ò��Ϲ�˾ 促进电弧喷射涂层的涂覆和功能的部件特征设计
CN2688723Y (zh) * 2004-03-16 2005-03-30 茂德科技股份有限公司 沉积环及应用此沉积环的支撑装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262029A (en) 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US5447570A (en) 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
EP0493089B1 (en) 1990-12-25 1998-09-16 Ngk Insulators, Ltd. Wafer heating apparatus and method for producing the same
US5803977A (en) 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
US6051122A (en) 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US6423636B1 (en) * 1999-11-19 2002-07-23 Applied Materials, Inc. Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
CN1500906A (zh) * 2002-11-12 2004-06-02 Ӧ�ò��Ϲ�˾ 促进电弧喷射涂层的涂覆和功能的部件特征设计
CN2688723Y (zh) * 2004-03-16 2005-03-30 茂德科技股份有限公司 沉积环及应用此沉积环的支撑装置

Also Published As

Publication number Publication date
WO2007103902A3 (en) 2008-10-30
US20070209931A1 (en) 2007-09-13
KR20090005317A (ko) 2009-01-13
CN101405431A (zh) 2009-04-08
WO2007103902A2 (en) 2007-09-13
JP2009529249A (ja) 2009-08-13
US7520969B2 (en) 2009-04-21
TW200737305A (en) 2007-10-01
JP5166291B2 (ja) 2013-03-21
TWI365487B (en) 2012-06-01
KR101007833B1 (ko) 2011-01-13

Similar Documents

Publication Publication Date Title
CN101405431B (zh) 有凹口的沉积环
JP5666133B2 (ja) 非接触型処理キット
US8221602B2 (en) Non-contact process kit
US8911601B2 (en) Deposition ring and electrostatic chuck for physical vapor deposition chamber
KR200482327Y1 (ko) 물리 기상 증착 챔버를 위한 실드, 스퍼터링 타겟의 스퍼터링 표면을 에워싸기 위한 실드, 및 프로세스 키트
US20070295602A1 (en) Ground shield with reentrant feature
US9123511B2 (en) Process kit for RF physical vapor deposition
CN102007572B (zh) 晶圆处理沉积屏蔽构件
US20150190835A1 (en) Extended life deposition ring
TWI829710B (zh) 用於減少電漿蝕刻腔室中的污染的基板支撐件和包括該基板支撐件的處理腔室
CN102576664A (zh) 用于rf物理气相沉积的处理套件
CN109155275A (zh) 具有增强边缘密封的用于高功率的工件载体
TWI488986B (zh) 非接觸式製程套組
CN116892007A (zh) 基板处理装置以及盖环组件
KR20040058562A (ko) 증착링에 금속물질을 코팅하는 방법 및 그 증착링을사용하는 스퍼터링 장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: American California

Patentee after: Applied Materials Inc.

Address before: American California

Patentee before: Applied Materials Inc.