JP5161076B2 - 光学素子と導波路とのアライメント方法 - Google Patents
光学素子と導波路とのアライメント方法 Download PDFInfo
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- JP5161076B2 JP5161076B2 JP2008514203A JP2008514203A JP5161076B2 JP 5161076 B2 JP5161076 B2 JP 5161076B2 JP 2008514203 A JP2008514203 A JP 2008514203A JP 2008514203 A JP2008514203 A JP 2008514203A JP 5161076 B2 JP5161076 B2 JP 5161076B2
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- waveguide
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- 238000000034 method Methods 0.000 title claims description 32
- 230000003287 optical effect Effects 0.000 title claims description 23
- 238000005253 cladding Methods 0.000 claims abstract description 45
- 239000011162 core material Substances 0.000 claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 description 67
- 238000010168 coupling process Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000012792 core layer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
- G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (4)
- 少なくとも2つの導波路を含む光学素子の製造方法であって、前記方法は
a)導波路コア材料のコアパターンをベース層の上に設けるステップと、
b)前記コア材料および前記ベース層の上にクラッド層を設けるステップと、
を具え、前記ベース層上のクラッド層の表面高さは前記コア材料のパターンに依存して変化し、
前記コアパターンが、少なくとも2つの基準領域を有するように設計され、各基準領域が、各基準領域の上に所定の高さを有するクラッド層のピークを提供するように選択された幅を有し、
前記コアパターンが、更に、前記少なくとも2つの基準領域の前記ピークを結ぶ線がそれらの間に介在する前記クラッド層のピークよりも高くなるように設計され、前記基準領域の前記ピークの高さは、前記導波路の幅、数および間隔とクラッド層の高さとの間の関係に基づいて設計され、前記基準領域の前記ピークが垂直アライメント基準を提供し、
前記導波路は前記少なくとも2つの基準領域の間に存在する、
ことを特徴とする方法。 - 前記基準領域の前記ピークが、前記ベース層上で同一の所定の高さを有する請求項1に記載の光学素子の製造方法。
- 前記基準領域の前記幅が同一である請求項1または2に記載の光学素子の製造方法。
- 請求項1から3のいずれか一項に記載の光学素子の製造方法であって、
c)素子を前記導波路コアに対して垂直方向に位置決めするために、マウンティングデバイスを前記両基準領域の前記ピークと接触配置するステップをさらに具えることを特徴とする製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0511300.6A GB0511300D0 (en) | 2005-06-03 | 2005-06-03 | Control of vertical axis for passive alignment of optical components with wave guides |
GB0511300.6 | 2005-06-03 | ||
PCT/GB2006/002056 WO2006129123A1 (en) | 2005-06-03 | 2006-06-05 | Method of aligning optical components with waveguides |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008542832A JP2008542832A (ja) | 2008-11-27 |
JP5161076B2 true JP5161076B2 (ja) | 2013-03-13 |
Family
ID=34835055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514203A Active JP5161076B2 (ja) | 2005-06-03 | 2006-06-05 | 光学素子と導波路とのアライメント方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7772022B2 (ja) |
EP (1) | EP1886175B1 (ja) |
JP (1) | JP5161076B2 (ja) |
CN (1) | CN100573211C (ja) |
AT (1) | ATE464583T1 (ja) |
DE (1) | DE602006013619D1 (ja) |
GB (1) | GB0511300D0 (ja) |
WO (1) | WO2006129123A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0813784D0 (en) | 2008-07-28 | 2008-09-03 | Ct Integrated Photonics Ltd | Optical intergration system |
US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
US8384007B2 (en) | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
JP7480277B2 (ja) * | 2020-03-31 | 2024-05-09 | 京セラ株式会社 | 光導波路モジュール及び光源モジュール |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61191093A (ja) | 1985-02-20 | 1986-08-25 | Matsushita Electric Ind Co Ltd | 半導体装置 |
FR2694841B1 (fr) * | 1992-08-14 | 1994-09-09 | Commissariat Energie Atomique | Procédé d'hybridation et de positionnement d'un composant opto-électronique et application de ce procédé au positionnement de ce composant par rapport à un guide optique intégré. |
JP2606078B2 (ja) | 1993-06-25 | 1997-04-30 | 日本電気株式会社 | 半導体レーザアレイおよびその製造方法 |
JPH0829637A (ja) * | 1994-07-20 | 1996-02-02 | Nippon Telegr & Teleph Corp <Ntt> | 光導波回路、光ファイバと光導波回路との接続器および接続方法 |
JPH10308555A (ja) * | 1997-05-01 | 1998-11-17 | Nippon Telegr & Teleph Corp <Ntt> | ハイブリッド導波形光回路とその製造方法 |
JP2000047055A (ja) * | 1998-07-28 | 2000-02-18 | Japan Aviation Electronics Industry Ltd | 光導波路デバイスおよびその製造方法 |
JP2000098157A (ja) * | 1998-09-25 | 2000-04-07 | Japan Aviation Electronics Industry Ltd | 光分岐装置およびその製造方法 |
JP2000275480A (ja) * | 1999-03-19 | 2000-10-06 | Nippon Telegr & Teleph Corp <Ntt> | 光モジュール |
JP2001242332A (ja) * | 2000-03-01 | 2001-09-07 | Nippon Telegr & Teleph Corp <Ntt> | 光導波路及びこれを用いた光導波路モジュール |
JP2001297963A (ja) * | 2000-04-12 | 2001-10-26 | Oki Electric Ind Co Ltd | 位置合わせ方法 |
US6553170B2 (en) * | 2001-08-31 | 2003-04-22 | Lightwave Microsystems Corporation | Method and system for a combination of high boron and low boron BPSG top clad fabrication process for a planar lightwave circuit |
GB2379995B (en) * | 2001-09-21 | 2005-02-02 | Kamelian Ltd | An optical coupling |
US6778718B2 (en) * | 2001-11-09 | 2004-08-17 | Corning Incorporated | Alignment of active optical components with waveguides |
EP1343232B1 (en) | 2002-03-08 | 2007-05-02 | nanoplus GmbH Nanosystems and Technologies | A semiconductor laser array with a lattice structure |
AU2003247748A1 (en) * | 2002-06-28 | 2004-01-19 | Xponent Photonics Inc | Waveguides assembled for transverse-transfer of optical power |
JP2004053659A (ja) * | 2002-07-16 | 2004-02-19 | Ricoh Co Ltd | 光電気集積装置の製造方法及び光電気集積装置 |
US6816653B2 (en) * | 2003-02-25 | 2004-11-09 | Corning Incorporated | Passive alignment of optical fibers with optical elements |
-
2005
- 2005-06-03 GB GBGB0511300.6A patent/GB0511300D0/en not_active Ceased
-
2006
- 2006-06-05 JP JP2008514203A patent/JP5161076B2/ja active Active
- 2006-06-05 AT AT06744110T patent/ATE464583T1/de not_active IP Right Cessation
- 2006-06-05 CN CNB2006800192151A patent/CN100573211C/zh active Active
- 2006-06-05 EP EP06744110A patent/EP1886175B1/en active Active
- 2006-06-05 US US11/916,348 patent/US7772022B2/en active Active
- 2006-06-05 DE DE602006013619T patent/DE602006013619D1/de active Active
- 2006-06-05 WO PCT/GB2006/002056 patent/WO2006129123A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP1886175B1 (en) | 2010-04-14 |
CN101189541A (zh) | 2008-05-28 |
EP1886175A1 (en) | 2008-02-13 |
US20080311693A1 (en) | 2008-12-18 |
WO2006129123A8 (en) | 2008-01-24 |
WO2006129123A1 (en) | 2006-12-07 |
CN100573211C (zh) | 2009-12-23 |
US7772022B2 (en) | 2010-08-10 |
JP2008542832A (ja) | 2008-11-27 |
GB0511300D0 (en) | 2005-07-13 |
ATE464583T1 (de) | 2010-04-15 |
DE602006013619D1 (de) | 2010-05-27 |
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