JP5160802B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5160802B2
JP5160802B2 JP2007081193A JP2007081193A JP5160802B2 JP 5160802 B2 JP5160802 B2 JP 5160802B2 JP 2007081193 A JP2007081193 A JP 2007081193A JP 2007081193 A JP2007081193 A JP 2007081193A JP 5160802 B2 JP5160802 B2 JP 5160802B2
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JP
Japan
Prior art keywords
frequency
impedance
peripheral
transmission line
electrode
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JP2007081193A
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English (en)
Japanese (ja)
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JP2008244063A (ja
JP2008244063A5 (enExample
Inventor
陽平 山澤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2007081193A priority Critical patent/JP5160802B2/ja
Priority to US12/055,799 priority patent/US20080236492A1/en
Publication of JP2008244063A publication Critical patent/JP2008244063A/ja
Publication of JP2008244063A5 publication Critical patent/JP2008244063A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2007081193A 2007-03-27 2007-03-27 プラズマ処理装置 Expired - Fee Related JP5160802B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007081193A JP5160802B2 (ja) 2007-03-27 2007-03-27 プラズマ処理装置
US12/055,799 US20080236492A1 (en) 2007-03-27 2008-03-26 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007081193A JP5160802B2 (ja) 2007-03-27 2007-03-27 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2008244063A JP2008244063A (ja) 2008-10-09
JP2008244063A5 JP2008244063A5 (enExample) 2010-02-25
JP5160802B2 true JP5160802B2 (ja) 2013-03-13

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ID=39792116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007081193A Expired - Fee Related JP5160802B2 (ja) 2007-03-27 2007-03-27 プラズマ処理装置

Country Status (2)

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US (1) US20080236492A1 (enExample)
JP (1) JP5160802B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150061464A (ko) * 2013-11-27 2015-06-04 (주)이루자 정전 척을 구비하는 스퍼터링 장치

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US8343592B2 (en) * 2007-12-25 2013-01-01 Applied Materials, Inc. Asymmetrical RF drive for electrode of plasma chamber
TWI522013B (zh) * 2009-03-30 2016-02-11 東京威力科創股份有限公司 Plasma processing device and plasma processing method
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2011176161A (ja) * 2010-02-25 2011-09-08 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
US8552346B2 (en) 2011-05-20 2013-10-08 Applied Materials, Inc. Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber
JP5977592B2 (ja) 2012-06-20 2016-08-24 東京応化工業株式会社 貼付装置
KR102038647B1 (ko) * 2013-06-21 2019-10-30 주식회사 원익아이피에스 기판 지지 장치 및 이를 구비하는 기판 처리 장치
JP2015162266A (ja) * 2014-02-26 2015-09-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2016031955A (ja) * 2014-07-28 2016-03-07 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6488150B2 (ja) 2015-02-27 2019-03-20 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US9859088B2 (en) * 2015-04-30 2018-01-02 Lam Research Corporation Inter-electrode gap variation methods for compensating deposition non-uniformity
JP6510922B2 (ja) * 2015-07-22 2019-05-08 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6869034B2 (ja) * 2017-01-17 2021-05-12 東京エレクトロン株式会社 プラズマ処理装置
CN119340265A (zh) * 2018-02-28 2025-01-21 应用材料公司 具有多个射频网孔以控制等离子体均匀性的静电卡盘
JP7059064B2 (ja) 2018-03-26 2022-04-25 株式会社日立ハイテク プラズマ処理装置
US11404296B2 (en) * 2018-09-04 2022-08-02 Applied Materials, Inc. Method and apparatus for measuring placement of a substrate on a heater pedestal
KR20210022879A (ko) * 2019-08-21 2021-03-04 세메스 주식회사 기판 지지 유닛 및 이를 구비하는 기판 처리 시스템
JP6785935B2 (ja) * 2019-09-25 2020-11-18 キヤノンアネルバ株式会社 エッチング装置
CN111304638B (zh) * 2019-12-05 2022-03-18 深圳市纳设智能装备有限公司 一种cvd设备
JP7344821B2 (ja) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 プラズマ処理装置
JP7450427B2 (ja) 2020-03-25 2024-03-15 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
JP7736446B2 (ja) * 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
CN113838734B (zh) * 2020-06-24 2023-09-01 中微半导体设备(上海)股份有限公司 等离子体处理装置及基片处理方法
US11848176B2 (en) * 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
CN114695051B (zh) * 2020-12-31 2025-02-21 拓荆科技股份有限公司 半导体处理设备及方法
KR102728811B1 (ko) * 2021-11-23 2024-11-13 피에스케이 주식회사 지지 유닛, 그리고 이를 포함하는 기판 처리 장치
KR20230089877A (ko) * 2021-12-14 2023-06-21 삼성전자주식회사 플라즈마 제어 장치 및 플라즈마 처리 시스템
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
KR20240123168A (ko) * 2023-02-06 2024-08-13 주식회사 원익아이피에스 기판 지지 장치의 조립 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0267634U (enExample) * 1988-11-10 1990-05-22
JPH0430728U (enExample) * 1990-07-04 1992-03-12
US6228278B1 (en) * 1998-09-30 2001-05-08 Lam Research Corporation Methods and apparatus for determining an etch endpoint in a plasma processing system
JP2005167283A (ja) * 2000-08-25 2005-06-23 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP4819244B2 (ja) * 2001-05-15 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
JP4370789B2 (ja) * 2002-07-12 2009-11-25 東京エレクトロン株式会社 プラズマ処理装置及び可変インピーダンス手段の校正方法
US20040118344A1 (en) * 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150061464A (ko) * 2013-11-27 2015-06-04 (주)이루자 정전 척을 구비하는 스퍼터링 장치
KR102216692B1 (ko) * 2013-11-27 2021-02-18 주식회사 에이치앤이루자 정전 척을 구비하는 스퍼터링 장치

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Publication number Publication date
US20080236492A1 (en) 2008-10-02
JP2008244063A (ja) 2008-10-09

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