JP5160380B2 - Film adhesive, semiconductor package using the same, and manufacturing method thereof - Google Patents

Film adhesive, semiconductor package using the same, and manufacturing method thereof Download PDF

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Publication number
JP5160380B2
JP5160380B2 JP2008289455A JP2008289455A JP5160380B2 JP 5160380 B2 JP5160380 B2 JP 5160380B2 JP 2008289455 A JP2008289455 A JP 2008289455A JP 2008289455 A JP2008289455 A JP 2008289455A JP 5160380 B2 JP5160380 B2 JP 5160380B2
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Prior art keywords
adhesive
film
semiconductor
epoxy resin
film adhesive
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JP2008289455A
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JP2010116453A (en
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稔 森田
英一 太地
徳之 切替
博之 矢野
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Nippon Steel and Sumikin Chemical Co Ltd
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Nippon Steel and Sumikin Chemical Co Ltd
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Description

本発明は、フィルム状接着剤、それを用いた半導体パッケージ及びその製造方法に関し、より詳しくは、ワイヤ、回路等の半導体部材の材質が銅である半導体パッケージを作製する際にも好適に用いることができるフィルム状接着剤、並びにそれを用いた半導体パッケージ及びその製造方法に関する。   The present invention relates to a film-like adhesive, a semiconductor package using the same, and a method for manufacturing the same, and more particularly, to be suitably used for manufacturing a semiconductor package in which a semiconductor member such as a wire or a circuit is made of copper. The present invention relates to a film-like adhesive that can be used, a semiconductor package using the same, and a method for manufacturing the same.

近年、電子機器の小型化及び高機能化が進んでおり、内部に搭載される半導体パッケージの構造は限られた実装領域の中で実装効率をより高めることが求められている。そして、例えば、記憶装置として機能するフラッシュメモリとして半導体パッケージを用いる場合には、メモリ容量を増大させることを目的として、複数個の半導体素子を積層して搭載するというスタックドパッケージが主として採用されている。   2. Description of the Related Art In recent years, electronic devices have been reduced in size and functionality, and the structure of a semiconductor package mounted inside is required to further improve mounting efficiency in a limited mounting area. For example, when a semiconductor package is used as a flash memory that functions as a storage device, a stacked package in which a plurality of semiconductor elements are stacked and mounted is mainly used for the purpose of increasing the memory capacity. Yes.

このようなスタックドパッケージにおいては、従来、図１に示すようにスペーサーを使用して金属ワイヤの破損を防止する手法が採用されていた。図１に示す従来のスタックドパッケージにおいては、半導体素子１と接着剤層２とを備える接着剤付き半導体素子１０を下側に配置される半導体素子３の上に積層する半導体素子の積層工程において、上側に配置される接着剤付き半導体素子１０と下側に配置される半導体素子３との間にスペーサー５を挟むことにより一定の隙間が確保されるため、上側に配置される半導体素子１の形状及び大きさに関わらず、下側の半導体素子３に設けられた金属ワイヤ６が破損することを防止することができる。しかしながら、図１に示す従来のスタックドパッケージにおいては、半導体素子を積層する毎にスペーサーを用いる必要があるため積層できる半導体素子の数に限界があり、半導体パッケージの薄型化には不向きであるという問題があった。   In such a stacked package, conventionally, as shown in FIG. 1, a technique for preventing breakage of a metal wire using a spacer has been adopted. In the conventional stacked package shown in FIG. 1, in a semiconductor element stacking process, a semiconductor element with an adhesive 10 including a semiconductor element 1 and an adhesive layer 2 is stacked on a semiconductor element 3 disposed on the lower side. Since a certain gap is secured by sandwiching the spacer 5 between the semiconductor element 10 with adhesive disposed on the upper side and the semiconductor element 3 disposed on the lower side, the semiconductor element 1 disposed on the upper side Regardless of the shape and size, the metal wire 6 provided on the lower semiconductor element 3 can be prevented from being damaged. However, in the conventional stacked package shown in FIG. 1, there is a limit to the number of semiconductor elements that can be stacked because it is necessary to use a spacer every time the semiconductor elements are stacked, and it is not suitable for thinning the semiconductor package. There was a problem.

そこで、このような半導体パッケージの薄型化の問題を解決する方法として、例えば、特開２００２−２２２９１３号公報（特許文献１）、特開２００４−７２００９号公報（特許文献２）、国際公開第２００６／１０９５０６号パンフレット（特許文献３）には、いわゆるフィルムオンワイヤ手法により、図２に示すようなスタックドパッケージを作製する方法が開示されている。図２に示すスタックドパッケージにおいては、上側に配置される接着剤付き半導体素子１０の接着剤層２中に、下側に配置される半導体素子３に設けられた金属ワイヤ６を損ねることなく埋め込みつつ、下側に配置される半導体素子３の上に接着剤付き半導体素子１０を直接積層する手法（フィルムオンワイヤ手法）により、スペーサーを用いないで半導体素子同士を積層することができる。
特開２００２−２２２９１３号公報 特開２００４−７２００９号公報 国際公開第２００６／１０９５０６号パンフレット Thus, as a method for solving such a problem of thinning of the semiconductor package, for example, Japanese Patent Application Laid-Open No. 2002-222913 (Patent Document 1), Japanese Patent Application Laid-Open No. 2004-72009 (Patent Document 2), and International Publication No. 2006. / 109506 pamphlet (Patent Document 3) discloses a method of manufacturing a stacked package as shown in FIG. 2 by a so-called film-on-wire method. In the stacked package shown in FIG. 2, the metal wire 6 provided in the semiconductor element 3 disposed on the lower side is embedded in the adhesive layer 2 of the semiconductor element with adhesive 10 disposed on the upper side without being damaged. On the other hand, the semiconductor elements 10 can be laminated without using a spacer by a technique (film on wire technique) in which the semiconductor element 10 with an adhesive is directly laminated on the semiconductor element 3 disposed on the lower side.
JP 2002-222913 A Japanese Patent Laid-Open No. 2004-72009 International Publication No. 2006/109506 Pamphlet

しかしながら、上記フィルムオンワイヤ手法により作製されたスタックドパッケージにおいては、ワイヤや回路等の半導体部材の材質によっては以下に示すような問題があった。すなわち、例えば、ワイヤについては半導体パッケージ組立コストを削減するために材質が金から銅に変更される場合があるが、このように銅材質のワイヤを使用する場合にはワイヤが接着剤層により腐食されやすいという問題があった。また、半導体素子の回路材料については電気抵抗の観点から材質がアルミから銅に変更される場合があるが、このように銅材質の回路材料を使用する場合には回路が接着剤層により腐食されやすいという問題があった。   However, the stacked package manufactured by the film-on-wire method has the following problems depending on the materials of semiconductor members such as wires and circuits. That is, for example, the wire may be changed from gold to copper in order to reduce the cost of assembling the semiconductor package. However, when the copper wire is used, the wire is corroded by the adhesive layer. There was a problem that it was easy to be done. In addition, as for the circuit material of the semiconductor element, the material may be changed from aluminum to copper from the viewpoint of electric resistance. However, when the circuit material made of copper is used, the circuit is corroded by the adhesive layer. There was a problem that it was easy.

本発明は、上記従来技術の有する課題に鑑みてなされたものであり、ワイヤ、回路等の半導体部材の材質が例えば銅である半導体パッケージをフィルムオンワイヤ手法により作製する場合であっても、半導体部材の破損を十分に防止しつつ半導体素子同士を接着させることができ、しかも半導体部材の腐食を十分に防止することが可能なフィルム状接着剤、並びにそれを用いた半導体パッケージ及びその製造方法を提供することを目的とする。   The present invention has been made in view of the above-described problems of the prior art, and even when a semiconductor package in which the material of a semiconductor member such as a wire or a circuit is copper, for example, is manufactured by a film-on-wire method, the semiconductor A film adhesive capable of adhering semiconductor elements while sufficiently preventing breakage of a member, and capable of sufficiently preventing corrosion of a semiconductor member, a semiconductor package using the same, and a method of manufacturing the same The purpose is to provide.

本発明者らは、上記目的を達成すべく鋭意研究を重ねた結果、接着剤組成物からなるフィルム状接着剤において、前記接着剤組成物として、特定のエポキシ樹脂及びイオントラップ剤を含有し、しかもシリカ充填剤を特定の比率で含有するものを用いることにより、ワイヤ、回路等の半導体部材の材質が例えば銅である半導体パッケージをフィルムオンワイヤ手法により作製する場合であっても、半導体部材の破損を十分に防止しつつ半導体素子同士を接着させることができ、しかも半導体部材の腐食を十分に防止することが可能なフィルム状接着剤が得られることを見出し、本発明を完成するに至った。   As a result of intensive studies to achieve the above object, the inventors of the present invention include a specific epoxy resin and an ion trapping agent as the adhesive composition in the film-like adhesive comprising the adhesive composition, In addition, by using a material containing a silica filler in a specific ratio, even when a semiconductor package in which the material of the semiconductor member such as a wire or a circuit is made of, for example, copper is manufactured by a film-on-wire method, It was found that a film-like adhesive capable of adhering semiconductor elements while sufficiently preventing breakage and capable of sufficiently preventing corrosion of semiconductor members was obtained, and the present invention was completed. .

すなわち、本発明のフィルム状接着剤は、接着剤組成物からなるフィルム状接着剤であって、
前記接着剤組成物が、全塩素濃度が２５０ｐｐｍ以下である低塩素含有率液状エポキシ樹脂（Ａ）、ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）、イオントラップ剤（Ｃ）、及び平均粒子径が３〜２０μｍであるシリカ充填剤（Ｄ）を含有するものであり、前記接着剤組成物中の前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）の含有比率が固形分換算で５〜２５質量％であり、且つ前記接着剤組成物中の前記シリカ充填剤（Ｄ）の含有比率が固形分換算で５０〜７０質量％であることを特徴とするものである。 That is, the film adhesive of the present invention is a film adhesive comprising an adhesive composition,
The adhesive composition has a low chlorine content liquid epoxy resin (A) having a total chlorine concentration of 250 ppm or less, a dicyclopentadiene type solid epoxy resin (B), an ion trap agent (C), and an average particle size of 3 It contains a silica filler (D) that is ˜20 μm, and the content ratio of the dicyclopentadiene type solid epoxy resin (B) in the adhesive composition is 5 to 25 mass% in terms of solid content. And the content rate of the said silica filler (D) in the said adhesive composition is 50-70 mass% in conversion of solid content, It is characterized by the above-mentioned.

また、本発明のフィルム状接着剤においては、前記イオントラップ剤（Ｃ）が、塩素イオン交換容量が２．５ｍｅｑ／ｇ以上のものであり、且つビスマス系化合物及びジルコニア系化合物からなる群から選択される少なくとも一つの無機化合物であることが好ましい。   In the film adhesive of the present invention, the ion trap agent (C) has a chloride ion exchange capacity of 2.5 meq / g or more, and is selected from the group consisting of bismuth compounds and zirconia compounds. Preferably, at least one inorganic compound is used.

さらに、本発明のフィルム状接着剤においては、前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）が、下記一般式（１）：   Furthermore, in the film adhesive of this invention, the said dicyclopentadiene type solid epoxy resin (B) is the following general formula (1):

Figure 0005160380
Figure 0005160380

（式（１）中、ｎは０〜１０の整数を表す。）
で表される樹脂であることが好ましい。 (In formula (1), n represents an integer of 0 to 10)
It is preferable that it is resin represented by these.

また、本発明のフィルム状接着剤においては、厚みが１０〜１５０μｍであることが好ましい。   Moreover, in the film adhesive of this invention, it is preferable that thickness is 10-150 micrometers.

本発明の半導体パッケージの製造方法は、複数の半導体素子を備えている半導体ウェハの一方の表面上に前記フィルム状接着剤を形成し、前記フィルム状接着剤の表面上にダイシングテープを貼り合せた後に、前記フィルム状接着剤と前記半導体ウェハとを同時にダイシングすることにより接着剤層を備える第１の半導体素子を得る工程と、
前記第１の半導体素子をダイシングテープから脱離し、その後金属ワイヤにより配線基板と電気的に接続されている第２の半導体素子上に、前記金属ワイヤの一部が前記接着剤層に埋まるように、前記第１の半導体素子を接着せしめる工程と、
を含むことを特徴とする方法である。また、本発明の半導体パッケージは、前記半導体パッケージの製造方法により得られるものである。 In the method for manufacturing a semiconductor package of the present invention, the film adhesive is formed on one surface of a semiconductor wafer having a plurality of semiconductor elements, and a dicing tape is bonded onto the surface of the film adhesive. Later, obtaining the first semiconductor element comprising an adhesive layer by simultaneously dicing the film adhesive and the semiconductor wafer;
The first semiconductor element is detached from the dicing tape, and then a part of the metal wire is embedded in the adhesive layer on the second semiconductor element electrically connected to the wiring board by the metal wire. Bonding the first semiconductor element;
It is the method characterized by including. The semiconductor package of the present invention is obtained by the method for manufacturing a semiconductor package.

なお、本発明のフィルム状接着剤を用いることによって、ワイヤ、回路等の半導体部材の材質が例えば銅である半導体パッケージをフィルムオンワイヤ手法により作製する場合であっても、半導体部材の破損を十分に防止しつつ半導体素子同士を接着させることができ、しかも半導体部材の腐食を十分に防止することが可能となる理由は必ずしも定かではないが、本発明者らは以下のように推察する。すなわち、本発明にかかる接着剤組成物においては、エポキシ樹脂として、塩素イオンの含有量が低い低塩素含有率液状エポキシ樹脂（Ａ）及び吸水性の低いジシクロペンタジエン型固形エポキシ樹脂（Ｂ）を併用しているため、硬化後の接着剤層中に含まれるハロゲン元素及び水分が少なくなる。また、本発明にかかる接着剤組成物においては、シリカ充填剤（Ｄ）の含有比率が固形分換算で５０〜７０質量％という高い比率であり、水分が吸着しやすい樹脂の比率が低いため、硬化後の接着剤層中に含まれる水分が少なくなる。さらに、本発明にかかる接着剤組成物に含まれているイオントラップ剤（Ｃ）により、硬化後の接着剤層中に含まれるハロゲン元素は捕捉される。このように、本発明のフィルム状接着剤を用いて半導体パッケージを作製した場合には、硬化後の接着剤層中に含まれるハロゲン元素及び水分が十分に少ないため、半導体部材の腐食を十分に防止することが可能となるものと本発明者らは推察する。また、本発明にかかる接着剤組成物においては、エポキシ樹脂として、常温において液状の低塩素含有率液状エポキシ樹脂（Ａ）と常温において固体のジシクロペンタジエン型固形エポキシ樹脂（Ｂ）とを併用することにより、常温における流動性と加熱圧着時における流動性とをそれぞれ適当な範囲に調整している。そのため、本発明のフィルム状接着剤を用いて半導体パッケージを作製した場合には、半導体部材の破損を十分に防止しつつ半導体素子同士を接着させることが可能となるものと本発明者らは推察する。   In addition, by using the film adhesive of the present invention, the semiconductor member is sufficiently damaged even when a semiconductor package in which the material of the semiconductor member such as a wire or a circuit is copper, for example, is produced by a film-on-wire method. The reason why the semiconductor elements can be adhered to each other while preventing the corrosion of the semiconductor member and the corrosion of the semiconductor member can be sufficiently prevented is not clear, but the present inventors infer as follows. That is, in the adhesive composition according to the present invention, as the epoxy resin, a low chlorine content liquid epoxy resin (A) having a low chloride ion content and a dicyclopentadiene type solid epoxy resin (B) having a low water absorption are used. Since they are used in combination, the halogen element and moisture contained in the cured adhesive layer are reduced. Moreover, in the adhesive composition concerning this invention, since the content rate of a silica filler (D) is a high ratio of 50-70 mass% in conversion of solid content, and the ratio of resin which water | moisture content tends to adsorb | suck is low, The moisture contained in the cured adhesive layer is reduced. Furthermore, the halogen element contained in the cured adhesive layer is captured by the ion trapping agent (C) contained in the adhesive composition according to the present invention. Thus, when a semiconductor package is produced using the film-like adhesive of the present invention, the halogen element and moisture contained in the cured adhesive layer are sufficiently small, so that the semiconductor member is sufficiently corroded. The present inventors speculate that this can be prevented. Moreover, in the adhesive composition according to the present invention, a low chlorine content liquid epoxy resin (A) that is liquid at room temperature and a dicyclopentadiene type solid epoxy resin (B) that is solid at room temperature are used in combination as an epoxy resin. Therefore, the fluidity at normal temperature and the fluidity at the time of thermocompression bonding are adjusted to appropriate ranges, respectively. Therefore, the present inventors speculate that when a semiconductor package is produced using the film adhesive of the present invention, the semiconductor elements can be bonded together while sufficiently preventing damage to the semiconductor member. To do.

本発明によれば、ワイヤ、回路等の半導体部材の材質が例えば銅である半導体パッケージをフィルムオンワイヤ手法により作製する場合であっても、半導体部材の破損を十分に防止しつつ半導体素子同士を接着させることができ、しかも半導体部材の腐食を十分に防止することが可能なフィルム状接着剤、並びにそれを用いた半導体パッケージ及びその製造方法を提供することが可能となる。   According to the present invention, even when a semiconductor package in which the material of a semiconductor member such as a wire or a circuit is made of, for example, copper is manufactured by a film-on-wire method, the semiconductor elements can be bonded to each other while sufficiently preventing the semiconductor member from being damaged. It is possible to provide a film adhesive capable of being bonded and sufficiently preventing corrosion of a semiconductor member, a semiconductor package using the same, and a method of manufacturing the same.

以下、本発明をその好適な実施形態に即して詳細に説明する。   Hereinafter, the present invention will be described in detail with reference to preferred embodiments thereof.

先ず、本発明のフィルム状接着剤について説明する。すなわち、本発明のフィルム状接着剤は、接着剤組成物からなるフィルム状接着剤であって、
前記接着剤組成物が、全塩素濃度が２５０ｐｐｍ以下である低塩素含有率液状エポキシ樹脂（Ａ）、ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）、イオントラップ剤（Ｃ）、及び平均粒子径が３〜２０μｍであるシリカ充填剤（Ｄ）を含有するものであり、且つ前記接着剤組成物中の前記シリカ充填剤（Ｄ）の含有比率が固形分換算で５０〜７０質量％であるものである。 First, the film adhesive of this invention is demonstrated. That is, the film adhesive of the present invention is a film adhesive comprising an adhesive composition,
The adhesive composition has a low chlorine content liquid epoxy resin (A) having a total chlorine concentration of 250 ppm or less, a dicyclopentadiene type solid epoxy resin (B), an ion trap agent (C), and an average particle size of 3 It contains a silica filler (D) of ˜20 μm, and the content ratio of the silica filler (D) in the adhesive composition is 50 to 70% by mass in terms of solid content. .

本発明にかかる低塩素含有率液状エポキシ樹脂（Ａ）は、全塩素濃度が２５０ｐｐｍ以下であり且つ常温において液状であるエポキシ樹脂である。全塩素濃度が２５０ｐｐｍを超えると、吸着した水分へ抽出される塩素イオンが多くなるため、得られるフィルム状接着剤を用いて半導体パッケージを作製した際における銅材質の半導体部材の腐食を十分に防止できない。また、前記低塩素含有率液状エポキシ樹脂（Ａ）における全塩素濃度は０〜２００ｐｐｍの範囲内にあることが好ましく、０．１〜５０ｐｐｍの範囲内にあることがより好ましい。なお、エポキシ樹脂の全塩素濃度は、ＪＩＳ Ｋ７２４３に記載されている方法に準拠して、銀電極‐ガラス電極が設けられた電位差滴定装置を用いて、硝酸銀による電位差滴定法により測定することができる。また、前記低塩素含有率液状エポキシ樹脂（Ａ）は常温において液状であることが必要であるが、温度２５℃における粘度が２００００Ｐａ・ｓ以下であることが好ましく、１５０００Ｐａ・ｓ以下であることがより好ましい。本発明においては、このような低塩素含有率液状エポキシ樹脂（Ａ）が前記接着剤組成物中に配合されているため、得られるフィルム状接着剤の加熱圧着時における流動性が確保され、フィルムオンワイヤ手法により半導体素子を積層する場合における金属ワイヤの破損を十分に防止することができる。   The low chlorine content liquid epoxy resin (A) according to the present invention is an epoxy resin having a total chlorine concentration of 250 ppm or less and being liquid at normal temperature. If the total chlorine concentration exceeds 250 ppm, the amount of chlorine ions extracted into the adsorbed moisture increases, so that corrosion of copper-made semiconductor members is sufficiently prevented when a semiconductor package is produced using the obtained film adhesive. Can not. The total chlorine concentration in the low chlorine content liquid epoxy resin (A) is preferably in the range of 0 to 200 ppm, and more preferably in the range of 0.1 to 50 ppm. The total chlorine concentration of the epoxy resin can be measured by a potentiometric titration method with silver nitrate using a potentiometric titrator provided with a silver electrode-glass electrode in accordance with the method described in JIS K7243. . The low chlorine content liquid epoxy resin (A) needs to be liquid at room temperature, but the viscosity at a temperature of 25 ° C. is preferably 20000 Pa · s or less, and 15000 Pa · s or less. More preferred. In the present invention, since such a low chlorine content liquid epoxy resin (A) is blended in the adhesive composition, the fluidity at the time of thermocompression bonding of the obtained film adhesive is secured, and the film It is possible to sufficiently prevent the metal wire from being damaged when the semiconductor elements are stacked by the on-wire method.

前記低塩素含有率液状エポキシ樹脂（Ａ）としては、フェノールノボラック型、オルソクレゾールノボラック型、ジシクロペンタジエン型、ビフェニル型、フルオレンビスフェノールＡ型、トリアジン型、ナフトール型、ナフタレンジオール型、トリフェニルメタン型、テトラフェニル型、ビスフェノールＡ型、ビスフェノールＦ型、ビスフェノールＡＤ型、ビスフェノールＳ型、トリメチロールメタン型等の骨格を有するエポキシ樹脂を用いることができるが、中でもビスフェノールＡ型の骨格を有するエポキシ樹脂を用いることが好ましい。これらのエポキシ樹脂は、１種を単独で又は２種以上を組み合わせて使用することができる。また、このようなビスフェノールＡ型の低塩素含有率液状エポキシ樹脂（Ａ）としては、例えば、東都化成（株）製の「ＹＤ−８２５ＧＳＨ」、ダイソー（株）製の「ＬＸ−０１」が挙げられる。   Examples of the low chlorine content liquid epoxy resin (A) include phenol novolac type, orthocresol novolak type, dicyclopentadiene type, biphenyl type, fluorene bisphenol A type, triazine type, naphthol type, naphthalenediol type, triphenylmethane type. An epoxy resin having a skeleton such as a tetraphenyl type, a bisphenol A type, a bisphenol F type, a bisphenol AD type, a bisphenol S type, or a trimethylol methane type can be used. It is preferable to use it. These epoxy resins can be used individually by 1 type or in combination of 2 or more types. Examples of the bisphenol A type low chlorine content liquid epoxy resin (A) include “YD-825GSH” manufactured by Toto Kasei Co., Ltd. and “LX-01” manufactured by Daiso Corporation. It is done.

前記低塩素含有率液状エポキシ樹脂（Ａ）の含有量は、本発明にかかる接着剤組成物中の低塩素含有率液状エポキシ樹脂（Ａ）の含有比率が固形分換算で５〜３０質量％の範囲内となる量であることが好ましく、１０〜２０質量％の範囲内となる量であることがより好ましい。含有量が前記下限未満では、得られるフィルム状接着剤の加熱圧着時における粘度が高くなり過ぎる傾向にあり、他方、前記上限を超えると、得られるフィルム状接着剤において、常温でのタック性が強くなり、ハンドリング性も悪くなる傾向にある。   The content of the low chlorine content liquid epoxy resin (A) is such that the content ratio of the low chlorine content liquid epoxy resin (A) in the adhesive composition according to the present invention is 5 to 30% by mass in terms of solid content. The amount is preferably in the range, and more preferably in the range of 10 to 20% by mass. If the content is less than the lower limit, the viscosity of the obtained film-like adhesive tends to be too high at the time of thermocompression bonding. On the other hand, if the upper limit is exceeded, the resulting film-like adhesive has tackiness at room temperature. It tends to be stronger and handleability is also worsened.

本発明にかかるジシクロペンタジエン型固形エポキシ樹脂（Ｂ）は、分子内にジシクロペンタジエン骨格を有し且つ常温において固体であるエポキシ樹脂である。前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）は他の固形エポキシ樹脂と比較して低吸水性の特徴を有しているため、得られるフィルム状接着剤の吸水性を低くすることができる。また、前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）は常温において固体であることが必要であるが、軟化点が５０〜１００℃の範囲内であることが好ましく、６０〜８０℃の範囲内であることがより好ましい。軟化点が前記下限未満では、得られるフィルム状接着剤の常温における粘度が低くなるためにフィルムの形状を保ちにくくなる傾向にあり、他方、前記上限を超えると、得られるフィルム状接着剤の加熱圧着時における粘度が高くなる傾向にある。また、前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）においては、数平均分子量が４３０〜２０００の範囲内であることが好ましく、６００〜１２００の範囲内であることがより好ましい。さらに、エポキシ当量が２００〜３００ｇ／ｅｑ範囲内であることが好ましく、２４０〜２８０ｇ／ｅｑ範囲内であることがより好ましい。   The dicyclopentadiene type solid epoxy resin (B) according to the present invention is an epoxy resin having a dicyclopentadiene skeleton in the molecule and solid at room temperature. Since the said dicyclopentadiene type solid epoxy resin (B) has the characteristic of low water absorption compared with other solid epoxy resins, the water absorption of the film adhesive obtained can be made low. The dicyclopentadiene-type solid epoxy resin (B) needs to be solid at room temperature, but preferably has a softening point in the range of 50 to 100 ° C, and in the range of 60 to 80 ° C. More preferably. If the softening point is less than the lower limit, the resulting film-like adhesive has a tendency to make it difficult to maintain the shape of the film because the viscosity at room temperature is low. On the other hand, if the upper limit is exceeded, the resulting film-like adhesive is heated. The viscosity at the time of pressure bonding tends to increase. In the dicyclopentadiene type solid epoxy resin (B), the number average molecular weight is preferably in the range of 430 to 2000, and more preferably in the range of 600 to 1200. Furthermore, the epoxy equivalent is preferably in the range of 200 to 300 g / eq, and more preferably in the range of 240 to 280 g / eq.

前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）としては、得られるフィルム状接着剤の硬化物の耐熱性を向上させるという観点から、剛直な構造の芳香環を有しているジシクロペンタジエン型エポキシ樹脂を用いることが好ましく、下記一般式（１）で表されるエポキシ樹脂を用いることが特に好ましい。   The dicyclopentadiene type solid epoxy resin (B) is a dicyclopentadiene type epoxy resin having an aromatic ring having a rigid structure from the viewpoint of improving the heat resistance of a cured product of the obtained film adhesive. Is preferably used, and an epoxy resin represented by the following general formula (1) is particularly preferably used.

Figure 0005160380
Figure 0005160380

一般式（１）において、ｎは０〜１０の整数（好ましくは０〜５の整数）を表す。また、前記一般式（１）で表されるエポキシ樹脂としては、市販されているものを使用することができ、例えば、日本化薬（株）製の「ＸＤ−１０００」、大日本インキ化学工業（株）製の「ＨＰ−７２００Ｈ」が挙げられる。   In General formula (1), n represents the integer of 0-10 (preferably the integer of 0-5). In addition, as the epoxy resin represented by the general formula (1), commercially available resins can be used. For example, “XD-1000” manufactured by Nippon Kayaku Co., Ltd., Dainippon Ink & Chemicals, Inc. “HP-7200H” manufactured by Co., Ltd. may be mentioned.

前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）の含有量は、本発明にかかる接着剤組成物中のジシクロペンタジエン型固形エポキシ樹脂（Ｂ）の含有比率が固形分換算で５〜２５質量％の範囲内となる量であることが好ましく、１０〜２０質量％の範囲内となる量であることがより好ましい。含有量が前記下限未満では、得られるフィルム状接着剤の常温における粘度が低くなるためにフィルムの形状を保ちにくくなる傾向にあると共に、得られるフィルム状接着剤を用いて半導体パッケージを作製した際に銅材質の半導体部材の腐食を引き起こしやすくなる傾向にあり、他方、前記上限を超えると、得られるフィルム状接着剤の加熱圧着時における粘度が高くなり過ぎる傾向にある。   The content of the dicyclopentadiene type solid epoxy resin (B) is such that the content ratio of the dicyclopentadiene type solid epoxy resin (B) in the adhesive composition according to the present invention is 5 to 25% by mass in terms of solid content. The amount is preferably in the range, and more preferably in the range of 10 to 20% by mass. When the content is less than the lower limit, the viscosity of the obtained film-like adhesive at normal temperature tends to be low, and it tends to be difficult to maintain the shape of the film, and when the semiconductor package is produced using the obtained film-like adhesive However, when the upper limit is exceeded, the viscosity of the obtained film-like adhesive at the time of thermocompression bonding tends to be too high.

本発明にかかるイオントラップ剤（Ｃ）は、イオン交換性を有する無機化合物である。前記イオントラップ剤（Ｃ）においては、銅材質の腐食を引き起こしやすい塩素イオンに対する交換容量が２．５ｍｅｑ／ｇ以上であることが好ましい。塩素イオンに対する交換容量が前記下限未満では、得られるフィルム状接着剤を用いて半導体パッケージを作製した際に銅材質の半導体部材の腐食を引き起こしやすくなる傾向にある。また、前記イオントラップ剤（Ｃ）の材質としては、一般的にジルコニウム系、ビスマス系、アンチモン系、マグネシウム系、アルミニウム系、鉛系の無機化合物が挙げられる。これらの中でも、ビスマス系又はジルコニア系の無機化合物を用いることが好ましい。   The ion trap agent (C) according to the present invention is an inorganic compound having ion exchange properties. In the ion trapping agent (C), it is preferable that the exchange capacity for chlorine ions that easily cause corrosion of the copper material is 2.5 meq / g or more. When the exchange capacity for chloride ions is less than the lower limit, when a semiconductor package is produced using the obtained film adhesive, it tends to cause corrosion of a copper semiconductor member. Moreover, as a material of the said ion trap agent (C), generally a zirconium type, bismuth type, antimony type, magnesium type, aluminum type, and a lead type inorganic compound are mentioned. Among these, it is preferable to use a bismuth-based or zirconia-based inorganic compound.

前記イオントラップ剤（Ｃ）の含有量は、本発明にかかる接着剤組成物中のイオントラップ剤（Ｃ）の含有比率が固形分換算で０．１〜５．０質量％の範囲内となる量であることが好ましい。また、前記イオントラップ剤（Ｃ）の含有量は、前記低塩素含有率液状エポキシ樹脂（Ａ）及び前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）の合計量１００質量部に対して、０．２〜１０質量部の範囲内となる量であることが好ましい。含有量が前記下限未満では、得られるフィルム状接着剤を用いて半導体パッケージを作製した際に銅材質の半導体部材の腐食を引き起こしやすくなる傾向にあり、他方、前記上限を超えると、接着剤組成物の粘度上昇を引き起こすためシリカ充填剤（Ｄ）を高充填しにくくなり、また、イオントラップ剤（Ｃ）自体の吸水性が高いため接着剤組成物の吸水性を上昇させる傾向にある。   The content of the ion trap agent (C) is such that the content ratio of the ion trap agent (C) in the adhesive composition according to the present invention is in the range of 0.1 to 5.0% by mass in terms of solid content. An amount is preferred. The content of the ion trapping agent (C) is 0.2 with respect to 100 parts by mass of the total amount of the low chlorine content liquid epoxy resin (A) and the dicyclopentadiene type solid epoxy resin (B). The amount is preferably in the range of 10 to 10 parts by mass. If the content is less than the above lower limit, it tends to cause corrosion of a copper semiconductor member when a semiconductor package is produced using the obtained film adhesive, and on the other hand, if the content exceeds the upper limit, the adhesive composition Since the viscosity of the product is increased, the silica filler (D) is difficult to be highly filled, and since the water absorption of the ion trapping agent (C) itself is high, the water absorption of the adhesive composition tends to be increased.

本発明にかかるシリカ充填剤（Ｄ）は、平均粒子径が３〜２０μｍのシリカ微粒子である。粒子径が３μｍ未満ではフィラーが凝集しやすくなるため接着剤組成物中に分散させにくくなり、また比表面積が大きくなるためエポキシ樹脂との接触面積を大きくし溶融粘度を上昇させてしまう。他方、粒子径が２０μｍを超えると、ロールナイフコーター等の塗工機で薄型のフィルム状接着剤を作製する際に、フィラーがきっかけとなりフィルム表面にスジを発生しやすくなる。本発明においては、接着剤組成物中に前記シリカ充填剤（Ｄ）を高い比率で含有させ、水分を吸収しやすいエポキシ樹脂等の樹脂成分の比率を相対的に低くすることにより、得られるフィルム状接着剤の吸水性を低くしている。   The silica filler (D) according to the present invention is silica fine particles having an average particle diameter of 3 to 20 μm. If the particle size is less than 3 μm, the filler tends to aggregate, making it difficult to disperse in the adhesive composition, and since the specific surface area becomes large, the contact area with the epoxy resin is increased and the melt viscosity is increased. On the other hand, when the particle diameter exceeds 20 μm, when a thin film-like adhesive is produced with a coating machine such as a roll knife coater, streaks are likely to occur on the film surface due to the filler. In the present invention, the film obtained by containing the silica filler (D) in a high ratio in the adhesive composition and relatively reducing the ratio of the resin component such as an epoxy resin that easily absorbs moisture. The water absorption of the adhesive is reduced.

前記シリカ充填剤（Ｄ）の含有量は、本発明にかかる接着剤組成物中のシリカ充填剤（Ｄ）の含有比率が固形分換算で５０〜７０質量％の範囲内（より好ましくは、５５〜６５質量％の範囲内）となる量であることが必要である。前記シリカ充填剤（Ｄ）の含有比率が５０質量％未満では、塩素イオンの抽出媒体となる水分量が増加するため、得られるフィルム状接着剤を用いて半導体パッケージを作製した際に銅材質の半導体部材の腐食を十分に防止できない。他方、前記シリカ充填剤（Ｄ）の含有比率が７０質量％を超えると、バインダーとして働く樹脂成分の不足により接着剤組成物の粘度上昇するため、得られるフィルム状接着剤が脆くなる。   The content of the silica filler (D) is such that the content ratio of the silica filler (D) in the adhesive composition according to the present invention is in the range of 50 to 70% by mass in terms of solid content (more preferably 55 It is necessary that the amount be in the range of ˜65 mass%. When the content ratio of the silica filler (D) is less than 50% by mass, the amount of moisture that becomes a chloride ion extraction medium increases. Therefore, when a semiconductor package is produced using the obtained film adhesive, The corrosion of semiconductor members cannot be sufficiently prevented. On the other hand, when the content ratio of the silica filler (D) is more than 70% by mass, the viscosity of the adhesive composition is increased due to a shortage of the resin component serving as a binder, so that the obtained film adhesive becomes brittle.

本発明にかかる接着剤組成物は、以上説明した低塩素含有率液状エポキシ樹脂（Ａ）、ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）、イオントラップ剤（Ｃ）及びシリカ充填剤（Ｄ）を含有するものであるが、後述するフェノキシ樹脂及びエポキシ樹脂硬化剤を更に含有していてもよい。   The adhesive composition according to the present invention contains the above-described low chlorine content liquid epoxy resin (A), dicyclopentadiene type solid epoxy resin (B), ion trapping agent (C) and silica filler (D). However, you may further contain the phenoxy resin and epoxy resin hardening | curing agent which are mentioned later.

前記フェノキシ樹脂は、例えばビスフェノールＡのようなビスフェノールとエピクロロヒドリンとから得られ、通常、数平均分子量が１００００以上の熱可塑性樹脂である。このようなフェノキシ樹脂を前記接着剤組成物中に更に含有させることにより、得られるフィルム状接着剤の常温におけるタック性や脆さを解消するという効果がある。また、前記フェノキシ樹脂は、前記低塩素含有率液状エポキシ樹脂（Ａ）及びジシクロペンタジエン型固形エポキシ樹脂（Ｂ）と構造が類似していることから相溶性がよく、樹脂溶融粘度も低く、接着性もよいという特長を示す。前記フェノキシ樹脂としては、ビスフェノールＡ型、優れた溶融粘度特性を示す傾向にあるビスフェノールＡ／Ｆ型、高耐熱性を有する傾向にあるビスフェノールＦ型等の骨格を有するフェノキシ樹脂を用いることができる。また、このようなフェノキシ樹脂としては、例えば、東都化成（株）製の「ＹＰ−５０Ｓ」、「ＹＰ−７０」、「ＦＸ−３１６」、「ＦＸ−２８０Ｓ」等が挙げられる。このようなフェノキシ樹脂を使用する場合、その含有量は、前記低塩素含有率液状エポキシ樹脂（Ａ）及び前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）の合計量１００質量部に対して、１５〜３０質量部の範囲内となる量であることが好ましい。   The phenoxy resin is obtained from bisphenol such as bisphenol A and epichlorohydrin, and is usually a thermoplastic resin having a number average molecular weight of 10,000 or more. By further including such a phenoxy resin in the adhesive composition, there is an effect of eliminating tackiness and brittleness at room temperature of the obtained film adhesive. Also, the phenoxy resin is compatible with the low chlorine content liquid epoxy resin (A) and the dicyclopentadiene type solid epoxy resin (B), and thus has a good compatibility, low resin melt viscosity, and adhesion. It shows the feature of good characteristics. As the phenoxy resin, a phenoxy resin having a skeleton such as bisphenol A type, bisphenol A / F type that tends to exhibit excellent melt viscosity characteristics, and bisphenol F type that tends to have high heat resistance can be used. Examples of such phenoxy resins include “YP-50S”, “YP-70”, “FX-316”, “FX-280S” manufactured by Toto Kasei Co., Ltd., and the like. When such a phenoxy resin is used, the content thereof is 15 to 15 parts by mass with respect to 100 parts by mass of the total amount of the low chlorine content liquid epoxy resin (A) and the dicyclopentadiene type solid epoxy resin (B). The amount is preferably in the range of 30 parts by mass.

前記エポキシ樹脂硬化剤は、エポキシ樹脂を硬化させることができるものである。このようなエポキシ樹脂硬化剤としては、アミン類、酸無水物類、多価フェノール類等の公知の硬化剤を用いることができるが、これらの中でも、前記樹脂成分が必要な粘着性を示す温度以上で硬化性を発揮し、しかも速硬化性を発揮する潜在性硬化剤を選択して用いることが好ましい。このような潜在性硬化剤としては、例えば、ジシアンジアミド、イミダゾール類、ヒドラジド類、三弗化ホウ素−アミン錯体、アミンイミド、ポリアミン塩及びこれらの変性物が挙がられるが、これらの他にマイクロカプセル型の硬化剤を使用してもよい。これらの潜在性硬化剤は、１種を単独で又は２種以上を組み合わせて使用することができる。このような潜在性硬化剤を前記接着剤組成物中に更に含有させることにより、室温での長期保存も可能な保存安定性の高いフィルム接着剤を得ることができる。このようなエポキシ樹脂硬化剤を使用する場合、その含有量は、前記低塩素含有率液状エポキシ樹脂（Ａ）及び前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）の合計量１００質量部に対して、０．５〜５０質量部の範囲内となる量であることが好ましい。   The epoxy resin curing agent can cure the epoxy resin. As such an epoxy resin curing agent, known curing agents such as amines, acid anhydrides, polyhydric phenols and the like can be used, and among these, the temperature at which the resin component requires the necessary tackiness. It is preferable to select and use a latent curing agent that exhibits curability and exhibits fast curability. Examples of such latent curing agents include dicyandiamide, imidazoles, hydrazides, boron trifluoride-amine complexes, amine imides, polyamine salts, and modified products thereof. A curing agent may be used. These latent curing agents can be used singly or in combination of two or more. By further including such a latent curing agent in the adhesive composition, it is possible to obtain a film adhesive having high storage stability that can be stored for a long period at room temperature. When such an epoxy resin curing agent is used, the content is 100 parts by mass with respect to a total amount of 100 parts by mass of the low chlorine content liquid epoxy resin (A) and the dicyclopentadiene type solid epoxy resin (B). The amount is preferably in the range of 0.5 to 50 parts by mass.

本発明にかかる接着剤組成物は、必要に応じて、カップリング剤、酸化防止剤、難燃剤、着色剤等の他の添加剤；ブタジエン系ゴムやシリコーンゴム等の応力緩和剤を更に含有していてもよい。このようなカップリング剤は、前記シリカ充填剤（Ｄ）との界面を補強し高い破壊強度を発現させると共に接着力の向上を図ることができるという点で好ましい。また、このようなカップリング剤としては、アミノ基、エポキシ基を含有したものが好ましい。   The adhesive composition according to the present invention further contains, as necessary, other additives such as a coupling agent, an antioxidant, a flame retardant, and a colorant; a stress relaxation agent such as butadiene rubber and silicone rubber. It may be. Such a coupling agent is preferable in that it can reinforce the interface with the silica filler (D) to exhibit high fracture strength and improve adhesive strength. Moreover, as such a coupling agent, the thing containing an amino group and an epoxy group is preferable.

本発明にかかる接着剤組成物は、フィルム状接着剤を作製する際の粘度調整のために、有機溶媒を更に含有していてもよい。このような有機溶剤としては、トルエン、キシレン等の芳香族炭化水素、メチルイソブチルケトン（ＭＩＢＫ）やメチルエチルケトン（ＭＥＫ）等のケトン系溶剤、モノグライム、ジグライム等のエーテル系溶剤が挙げられる。   The adhesive composition according to the present invention may further contain an organic solvent for adjusting the viscosity when producing a film adhesive. Examples of such an organic solvent include aromatic hydrocarbons such as toluene and xylene, ketone solvents such as methyl isobutyl ketone (MIBK) and methyl ethyl ketone (MEK), and ether solvents such as monoglyme and diglyme.

本発明のフィルム状接着剤は、以上説明した接着剤組成物をフィルム状に成形してなるものである。より具体的には、前記接着剤組成物を、離型処理されたポリプロピレン（ＰＰ）、ポリエチレン（ＰＥ）、ポリエチレンテレフタレート（ＰＥＴ）等の基材（保護フィルム）に、ロールナイフコーター、グラビアコーター、ダイコーター、リバースコーター等の公知の方法に従って塗工し、前記接着剤組成物の硬化開始温度以下の温度にて熱処理を施して乾燥することにより、本発明のフィルム状接着剤を得られる。このようにして形成されるフィルム状接着剤の厚みは１０〜１５０μｍの範囲であることが好ましい。   The film adhesive of the present invention is formed by forming the above-described adhesive composition into a film. More specifically, the adhesive composition is subjected to a release knife-treated polypropylene (PP), polyethylene (PE), polyethylene terephthalate (PET) or other substrate (protective film), a roll knife coater, a gravure coater, The film adhesive of the present invention can be obtained by coating according to a known method such as a die coater or a reverse coater, followed by heat treatment at a temperature not higher than the curing start temperature of the adhesive composition and drying. The thickness of the film adhesive thus formed is preferably in the range of 10 to 150 μm.

また、本発明のフィルム状接着剤においては、フィルム状接着剤の硬化物（例えば温度１８０℃にて１時間の熱処理を施したもの）の抽出塩素イオン濃度が５．０ｐｐｍ以下であることが好ましい。また、前記フィルム状接着剤の硬化物を温度８５℃、相対湿度８５％の条件下において１００時間放置した場合における吸水率は１．０質量％以下であることが好ましい。フィルム状接着剤の硬化物における抽出塩素イオン濃度又は吸水率が前記上限を超えると、得られるフィルム状接着剤を用いて半導体パッケージを作製した際に、半導体パッケージの高温高湿下でのバイアス電圧高度加速ストレス試験（バイアスＨＡＳＴ）といった信頼性試験時に腐食が発生しやすい傾向にある。   Moreover, in the film adhesive of this invention, it is preferable that the extraction chloride ion density | concentration of the hardened | cured material of a film adhesive (for example, what heat-processed for 1 hour at the temperature of 180 degreeC) is 5.0 ppm or less. . Moreover, it is preferable that the water absorption is 1.0% by mass or less when the cured product of the film adhesive is left for 100 hours under the conditions of a temperature of 85 ° C. and a relative humidity of 85%. When the extracted chloride ion concentration or the water absorption rate in the cured product of the film adhesive exceeds the upper limit, when the semiconductor package is produced using the obtained film adhesive, the bias voltage of the semiconductor package under high temperature and high humidity Corrosion tends to occur during a reliability test such as a highly accelerated stress test (bias HAST).

次に、本発明の半導体パッケージ及びその製造方法について説明する。すなわち、本発明の半導体パッケージの製造方法は、複数の半導体素子を備えている半導体ウェハの表面上に前記フィルム状接着剤を形成し、前記フィルム状接着剤の表面上にダイシングテープを貼り合せた後に、前記フィルム状接着剤と前記半導体ウェハとを同時にダイシングすることにより接着剤層を備える第１の半導体素子を得る工程（接着剤付き半導体素子の作製工程）と、前記第１の半導体素子をダイシングテープから剥がし、その後金属ワイヤにより配線基板と電気的に接続されている第２の半導体素子上に、前記金属ワイヤの一部が前記接着剤層に埋まるように、前記第１の半導体素子を接着せしめる工程（半導体素子の積層工程）とを含むことを特徴とする方法である。また、本発明の半導体パッケージは、前記半導体パッケージの製造方法により得られるものである。   Next, the semiconductor package and the manufacturing method thereof according to the present invention will be described. That is, in the semiconductor package manufacturing method of the present invention, the film adhesive is formed on the surface of a semiconductor wafer having a plurality of semiconductor elements, and a dicing tape is bonded onto the surface of the film adhesive. Later, a step of obtaining a first semiconductor element having an adhesive layer by simultaneously dicing the film adhesive and the semiconductor wafer (manufacturing step of the semiconductor element with an adhesive), and the first semiconductor element The first semiconductor element is peeled off from the dicing tape, and then the first semiconductor element is embedded in the adhesive layer on the second semiconductor element electrically connected to the wiring board by the metal wire. And a bonding step (semiconductor element stacking step). The semiconductor package of the present invention is obtained by the method for manufacturing a semiconductor package.

以下、図３を参照しながら本発明の半導体パッケージの製造方法についてより詳細に説明する。図３は、本発明の半導体パッケージの製造方法の好適な一実施形態を説明するための模式工程図である。   Hereinafter, the semiconductor package manufacturing method of the present invention will be described in more detail with reference to FIG. FIG. 3 is a schematic process diagram for explaining a preferred embodiment of a method for producing a semiconductor package of the present invention.

本発明の半導体パッケージの製造方法においては、先ず、シリコンウェハ１１の一方の面に本発明のフィルム状接着剤１２を貼り付けた後（図３（ａ）及び（ｂ）参照）、ダイシングテープ１３を下地にしてシリコンウェハ１１とフィルム状接着剤１２を切断して（図３（ｃ）参照）、半導体素子１と接着剤層２とを備える第１の半導体素子１０を得る（接着剤付き半導体素子の作製工程）。次いで、第１の半導体素子１０をダイシングテープ１３から剥がし（図３（ｄ）参照）、第１の半導体素子１０の接着剤層２が第２の半導体素子３と接し且つ金属ワイヤ６の一部が接着剤層２に接するように配置し、加熱することにより組成物中のエポキシ樹脂を硬化させ、金属ワイヤ６の一部が接着剤層２に埋まるように第１の半導体素子１０を第２の半導体素子３上に接着せしめる（半導体素子の積層工程、図３（ｅ）参照）。このような工程における加熱温度は、通常８０〜１８０℃の範囲内であればよい。また、このような工程における加熱時間は、通常１〜１８０分間の範囲内であればよい。このような半導体素子の積層工程により、エポキシ樹脂が硬化し、金属ワイヤ６の一部が接着剤層２に埋めると共に半導体素子同士１、３を強固に接着できる。その後、金属ワイヤ６により配線基板７と半導体素子１とを接続した後（図３（ｆ）参照）、封止樹脂８により樹脂封止することにより（図３（ｇ）参照）、本発明の半導体パッケージを製造することができる。   In the semiconductor package manufacturing method of the present invention, first, the film adhesive 12 of the present invention is attached to one surface of a silicon wafer 11 (see FIGS. 3A and 3B), and then a dicing tape 13 is used. The silicon wafer 11 and the film adhesive 12 are cut using the substrate as a base (see FIG. 3C) to obtain the first semiconductor element 10 including the semiconductor element 1 and the adhesive layer 2 (semiconductor with adhesive) Element manufacturing process). Next, the first semiconductor element 10 is peeled off from the dicing tape 13 (see FIG. 3D), and the adhesive layer 2 of the first semiconductor element 10 is in contact with the second semiconductor element 3 and a part of the metal wire 6 Is disposed so as to be in contact with the adhesive layer 2 and heated to cure the epoxy resin in the composition, and the first semiconductor element 10 is secondly arranged so that a part of the metal wire 6 is embedded in the adhesive layer 2. The semiconductor element 3 is adhered (see a semiconductor element stacking step, see FIG. 3E). The heating temperature in such a process should just be in the range of 80-180 degreeC normally. Moreover, the heating time in such a process should just be in the range of 1-180 minutes normally. By such a process of laminating semiconductor elements, the epoxy resin is cured, and a part of the metal wire 6 is buried in the adhesive layer 2 and the semiconductor elements 1 and 3 can be firmly bonded to each other. Then, after connecting the wiring board 7 and the semiconductor element 1 with the metal wire 6 (see FIG. 3 (f)), the resin is sealed with the sealing resin 8 (see FIG. 3 (g)). A semiconductor package can be manufactured.

以上、本発明の半導体パッケージの製造方法の好適な実施形態について説明したが、本発明の半導体パッケージの製造方法は上記実施形態に限定されるものではない。例えば、本発明の半導体パッケージの製造方法によって接着された半導体素子を被着体として、この半導体素子上に更に本発明の半導体装置の製造方法によって半導体素子を接着せしめることにより、半導体素子の更なる積層を図ることができる。   The preferred embodiment of the semiconductor package manufacturing method of the present invention has been described above, but the semiconductor package manufacturing method of the present invention is not limited to the above embodiment. For example, the semiconductor element bonded by the method for manufacturing a semiconductor package of the present invention is used as an adherend, and the semiconductor element is further bonded on the semiconductor element by the method for manufacturing a semiconductor device of the present invention. Lamination can be achieved.

以下、実施例及び比較例に基づいて本発明をより具体的に説明するが、本発明は以下の実施例に限定されるものではない。なお、以下の実施例及び比較例において、塩素イオン濃度、吸水率及び腐食性はそれぞれ以下の方法により測定又は評価した。   EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example and a comparative example, this invention is not limited to a following example. In the following examples and comparative examples, the chlorine ion concentration, water absorption, and corrosivity were measured or evaluated by the following methods.

（i）塩素イオン濃度
熱硬化前のフィルム状接着剤を約１０ｇ切り取り、熱風オーブンを用いて温度１８０℃にて１時間の熱処理を行い、熱硬化後のサンプルを作製した。容器に熱硬化後のサンプル約２ｇと純水５０ｍＬを入れ、温度１２１℃にて２０時間の熱処理を行い、水に塩素イオンを抽出させた。得られた抽出水の塩素イオン濃度（単位：ｐｐｍ）をイオンクロマトグラフィにより測定した。 (I) Chlorine ion concentration About 10 g of the film-like adhesive before thermosetting was cut out and subjected to heat treatment at a temperature of 180 ° C. for 1 hour using a hot air oven to prepare a sample after thermosetting. About 2 g of the heat-cured sample and 50 mL of pure water were put in a container, and heat treatment was performed at a temperature of 121 ° C. for 20 hours to extract chlorine ions in water. Chlorine ion concentration (unit: ppm) of the obtained extracted water was measured by ion chromatography.

（ii）吸水率
熱硬化前のフィルム状接着剤を約１０ｇ切り取り、金型（形状：円板状、直径：５ｃｍΦ、厚み：３ｍｍ）に入れた後に温度１５０℃の熱板上でフィルム状接着剤を溶融させ成型した。成型後のサンプルを室温下で冷却し、温度１８０℃にて１時間の熱処理を行い、熱硬化後のサンプルを作製した。得られた熱硬化後のサンプルについて、初期の質量（Ｗ０）及び温度８５℃、相対湿度８５％の条件下において１００時間放置後の質量（Ｗ１００）を測定し、その測定値から吸水率〔｛（Ｗ１００−Ｗ０）／Ｗ０｝×１００〕（単位：質量％）を求めた。 (Ii) Water absorption rate About 10 g of the film-like adhesive before thermosetting is cut out, put into a mold (shape: disk shape, diameter: 5 cmΦ, thickness: 3 mm), and then film-like adhesion on a hot plate at a temperature of 150 ° C. The agent was melted and molded. The sample after molding was cooled at room temperature and heat-treated at a temperature of 180 ° C. for 1 hour to produce a thermoset sample. About the obtained sample after thermosetting, the mass (W 100 ) after being left for 100 hours under the conditions of initial mass (W 0 ), temperature 85 ° C. and relative humidity 85% is measured. [{(W 100 −W 0 ) / W 0 } × 100] (unit: mass%) was determined.

（iii）腐食性
先ず、熱硬化前のフィルム状接着剤を半導体素子に貼り付けて接着剤付き半導体素子を作製した。一方、銅材質のワイヤが設けられた半導体素子をリードフレーム基板（材質：４２Ａｒｒｏｙ系金属、厚み：１２５μｍ）上に搭載し、銅ワイヤ（直径：２５μｍ）をリードフレーム基板に接合した。 (Iii) Corrosiveness First, a film-like adhesive before thermosetting was attached to a semiconductor element to produce a semiconductor element with an adhesive. On the other hand, a semiconductor element provided with a copper wire was mounted on a lead frame substrate (material: 42 Arloy metal, thickness: 125 μm), and a copper wire (diameter: 25 μm) was bonded to the lead frame substrate.

次に、リードフレーム基板に搭載された半導体素子上に、接着剤付き半導体素子を配置し、温度１８０℃にて１時間の熱処理を行い、半導体素子同士を接着した。その後、モールド剤（京セラ製、商品名「ＫＥ−３０００Ｆ５−２」）により、これらの半導体素子を封止し、温度１８０℃にて５時間の熱処理を行い、モールド剤を硬化せしめて半導体パッケージサンプルを得た。   Next, a semiconductor element with an adhesive was placed on the semiconductor element mounted on the lead frame substrate, and heat treatment was performed at a temperature of 180 ° C. for 1 hour to bond the semiconductor elements. Thereafter, these semiconductor elements are sealed with a molding agent (trade name “KE-3000F5-2” manufactured by Kyocera), heat-treated at a temperature of 180 ° C. for 5 hours, and the molding agent is cured to obtain a semiconductor package sample. Got.

得られた半導体パッケージサンプルに対し、バイアスＨＡＳＴ試験（温度：１３０℃、相対湿度：８５％、印加電圧：１．８Ｖ、時間：１００時間）を施した後に、この半導体パッケージサンプルの断面を走査型電子顕微鏡（ＳＥＭ）により、半導体素子表面の銅回路及び銅ワイヤ部分の腐食具合を観察した。そして、腐食が観察されなかった場合は「○（腐食性が良好）」と判定し、腐食が観察された場合は「×（腐食性が悪い）」と判定した。   The obtained semiconductor package sample was subjected to a bias HAST test (temperature: 130 ° C., relative humidity: 85%, applied voltage: 1.8 V, time: 100 hours), and then the cross section of the semiconductor package sample was scanned. The corrosion condition of the copper circuit and the copper wire portion on the surface of the semiconductor element was observed with an electron microscope (SEM). And when corrosion was not observed, it was determined as “◯ (good corrosivity)”, and when corrosion was observed, it was determined as “× (poor corrosivity)”.

（実施例１）
ＸＤ−１０００（ジシクロペンタジエン型固形エポキシ樹脂、軟化点：約７０℃、日本化薬製）５５ｇ、ＹＰ−７０（フェノキシ樹脂、軟化点：約７０℃、東都化成製）３０ｇ、ＹＤ−８２５ＧＳＨ（ビスフェノールＡ型低塩素型液状エポキシ樹脂、東都化成製）４９ｇを秤量し、８３ｇのＭＩＢＫを溶剤として５００ｍｌのセパラブルフラスコ中、温度１１０℃で２時間加熱攪拌して樹脂ワニスを得た。得られた樹脂ワニス２１７ｇを８００ｍｌのプラネタリーミキサーに秤量し、ＦＢ−３ＳＤＸ（球状シリカ、平均粒子径：３μｍ、デンカ社製）１８６ｇを加えて混合したものを３本ロールで混練して混合物を得た。得られた混合物に、ＩＸＥ−６１０７（ビスマス／ジルコニア系イオントラップ剤、東亞合成製）７ｇ及び２ＰＨＺ−ＰＷ（イミダゾール型硬化剤、四国化成株式会社）９ｇを加えてプラネタリーミキサーで攪拌混合後、真空脱泡して接着剤組成物を得た。得られた接着剤組成物を厚さ５０μｍの離型処理されたＰＥＴフィルム上に塗布後、温度８０℃で１０分間、温度１５０℃で１分間の熱風乾燥を行い、厚みが６０μｍのフィルム状接着剤を得た。 Example 1
XD-1000 (dicyclopentadiene type solid epoxy resin, softening point: about 70 ° C., manufactured by Nippon Kayaku) 55 g, YP-70 (phenoxy resin, softening point: about 70 ° C., manufactured by Tohto Kasei) 30 g, YD-825GSH ( 49 g of a bisphenol A type low chlorine liquid epoxy resin (manufactured by Tohto Kasei) was weighed, and 83 g MIBK was used as a solvent in a 500 ml separable flask and heated and stirred at a temperature of 110 ° C. for 2 hours to obtain a resin varnish. 217 g of the obtained resin varnish was weighed in an 800 ml planetary mixer, and FB-3SDX (spherical silica, average particle size: 3 μm, manufactured by Denka) 186 g was added and mixed, and the mixture was kneaded with three rolls. Obtained. After adding 7 g of IXE-6107 (bismuth / zirconia ion trap agent, manufactured by Toagosei Co., Ltd.) and 9 g of 2PHZ-PW (imidazole type curing agent, Shikoku Kasei Co., Ltd.) to the resulting mixture, stirring and mixing with a planetary mixer, The adhesive composition was obtained by vacuum degassing. The obtained adhesive composition was applied onto a 50 μm thick release-treated PET film, and then dried with hot air at a temperature of 80 ° C. for 10 minutes and at a temperature of 150 ° C. for 1 minute to form a film adhesive having a thickness of 60 μm. An agent was obtained.

（実施例２）
低塩素型液状エポキシ樹脂として、ＹＤ−８２５ＧＳＨに代えてＬＸ−０１（ビスフェノールＡ型低塩素型液状エポキシ樹脂、ダイソー製）４９ｇを用いた以外は実施例１と同様にしてフィルム状接着剤を得た。 (Example 2)
A film adhesive was obtained in the same manner as in Example 1 except that 49 g of LX-01 (bisphenol A type low chlorine type liquid epoxy resin, manufactured by Daiso) was used instead of YD-825GSH as the low chlorine type liquid epoxy resin. It was.

（実施例３）
シリカ充填剤ＦＢ−３ＳＤＸの添加量を３５０ｇとした以外は実施例１と同様にしてフィルム状接着剤を得た。 (Example 3)
A film adhesive was obtained in the same manner as in Example 1 except that the addition amount of the silica filler FB-3SDX was 350 g.

（実施例４）
イオントラップ剤として、ＩＸＥ−６１０７に代えてＩＸＥ−５５０（ビスマス系イオントラップ剤、東亞合成製）７ｇを用いた以外は実施例１と同様にしてフィルム状接着剤を得た。 Example 4
A film adhesive was obtained in the same manner as in Example 1 except that 7 g of IXE-550 (bismuth ion trapping agent, manufactured by Toagosei Co., Ltd.) was used instead of IXE-6107 as the ion trapping agent.

（比較例１）
ＹＤ−８２５ＧＳＨに代えてＪＥＲ８２８（ビスフェノールＡ型液状エポキシ樹脂、ジャパンエポキシレジン製）４９ｇを用い、イオントラップ剤を使用せず、更にシリカ充填剤ＦＢ−３ＳＤＸの添加量を１４６ｇとした以外は実施例１と同様にしてフィルム状接着剤を得た。 (Comparative Example 1)
Example except that 49 g of JER828 (bisphenol A liquid epoxy resin, manufactured by Japan Epoxy Resin) was used instead of YD-825GSH, no ion trap agent was used, and the addition amount of silica filler FB-3SDX was 146 g. In the same manner as in Example 1, a film adhesive was obtained.

（比較例２）
シリカ充填剤ＦＢ−３ＳＤＸの添加量を１００ｇとした以外は実施例１と同様にしてフィルム状接着剤を得た。 (Comparative Example 2)
A film adhesive was obtained in the same manner as in Example 1 except that the amount of silica filler FB-3SDX added was 100 g.

（比較例３）
ＹＤ−８２５ＧＳＨに代えてＪＥＲ８２８（ビスフェノールＡ型液状エポキシ樹脂、ジャパンエポキシレジン製）４９ｇを用いた以外は実施例１と同様にしてフィルム状接着剤を得た。
＜溶融粘度及びダイアタッチ可能温度領域の評価＞
実施例１〜４及び比較例１〜３で得られたフィルム状接着剤について、塩素イオン濃度、吸水率及び腐食性を、上記の方法で評価した。得られた結果を表１に示す。また、実施例１〜４及び比較例１〜３で得られたフィルム状接着剤における接着剤組成物の配合組成、並びに接着剤組成物中のシリカ充填剤（Ｄ）の含有比率（固形分換算）を表１に示す。 (Comparative Example 3)
A film adhesive was obtained in the same manner as in Example 1 except that 49 g of JER828 (bisphenol A liquid epoxy resin, manufactured by Japan Epoxy Resin) was used instead of YD-825GSH.
<Evaluation of melt viscosity and die attachable temperature range>
About the film-like adhesives obtained in Examples 1 to 4 and Comparative Examples 1 to 3, the chlorine ion concentration, the water absorption rate and the corrosivity were evaluated by the above methods. The obtained results are shown in Table 1. Moreover, the compounding composition of the adhesive composition in the film adhesives obtained in Examples 1 to 4 and Comparative Examples 1 to 3, and the content ratio of the silica filler (D) in the adhesive composition (in terms of solid content) ) Is shown in Table 1.

Figure 0005160380
Figure 0005160380

表１に示した結果から明らかなように、本発明のフィルム状接着剤を用いた場合（実施例１〜４）は、ワイヤ、回路等の半導体部材の材質が銅である半導体パッケージをフィルムオンワイヤ手法により作製する場合において、半導体部材の破損を十分に防止しつつ半導体素子同士を接着させることができ、しかも半導体部材の腐食を十分に防止することができることが確認された。   As is apparent from the results shown in Table 1, when the film adhesive of the present invention was used (Examples 1 to 4), a semiconductor package in which the material of the semiconductor member such as a wire or a circuit was copper was film-on. In the case of producing by the wire technique, it was confirmed that the semiconductor elements can be bonded to each other while sufficiently preventing breakage of the semiconductor member, and corrosion of the semiconductor member can be sufficiently prevented.

以上説明したように、本発明によれば、ワイヤ、回路等の半導体部材の材質が例えば銅である半導体パッケージをフィルムオンワイヤ手法により作製する場合であっても、半導体部材の破損を十分に防止しつつ半導体素子同士を接着させることができ、しかも半導体部材の腐食を十分に防止することが可能なフィルム状接着剤、並びにそれを用いた半導体パッケージ及びその製造方法を提供することが可能となる。   As described above, according to the present invention, even when a semiconductor package in which the material of a semiconductor member such as a wire or a circuit is made of, for example, copper is manufactured by a film-on-wire method, damage to the semiconductor member is sufficiently prevented. However, it is possible to provide a film adhesive capable of adhering semiconductor elements to each other and sufficiently preventing corrosion of a semiconductor member, a semiconductor package using the same, and a method of manufacturing the same. .

従来のスタックドパッケージを示す模式断面図である。It is a schematic cross section which shows the conventional stacked package. フィルムオンワイヤ手法により作製されたスタックドパッケージを示す模式断面図である。It is a schematic cross section which shows the stacked package produced by the film on wire technique. 本発明の半導体パッケージの製造方法の一実施形態を示す模式工程図である。It is a schematic process drawing which shows one Embodiment of the manufacturing method of the semiconductor package of this invention.

符号の説明Explanation of symbols

１…半導体素子（上側）、２…接着剤層、３…半導体素子（下側）、４…接着剤層、５…スペーサー、６…金属ワイヤ、７…配線基板、８…封止樹脂、１０…接着剤付き半導体素子（第１の半導体素子）、１１…シリコンウェハ、１２…フィルム状接着剤、１３…ダイシングテープ。   DESCRIPTION OF SYMBOLS 1 ... Semiconductor element (upper side), 2 ... Adhesive layer, 3 ... Semiconductor element (lower side), 4 ... Adhesive layer, 5 ... Spacer, 6 ... Metal wire, 7 ... Wiring board, 8 ... Sealing resin, 10 ... Semiconductor element with adhesive (first semiconductor element), 11 ... Silicon wafer, 12 ... Film adhesive, 13 ... Dicing tape.

Claims (6)

接着剤組成物からなるフィルム状接着剤であって、
前記接着剤組成物が、全塩素濃度が２５０ｐｐｍ以下である低塩素含有率液状エポキシ樹脂（Ａ）、ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）、イオントラップ剤（Ｃ）、及び平均粒子径が３〜２０μｍであるシリカ充填剤（Ｄ）を含有するものであり、前記接着剤組成物中の前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）の含有比率が固形分換算で５〜２５質量％であり、且つ前記接着剤組成物中の前記シリカ充填剤（Ｄ）の含有比率が固形分換算で５０〜７０質量％であることを特徴とするフィルム状接着剤。 A film-like adhesive comprising an adhesive composition,
The adhesive composition has a low chlorine content liquid epoxy resin (A) having a total chlorine concentration of 250 ppm or less, a dicyclopentadiene type solid epoxy resin (B), an ion trap agent (C), and an average particle size of 3 It contains a silica filler (D) that is ˜20 μm, and the content ratio of the dicyclopentadiene type solid epoxy resin (B) in the adhesive composition is 5 to 25 mass% in terms of solid content. And the content ratio of the said silica filler (D) in the said adhesive composition is 50-70 mass% in conversion of solid content, The film adhesive characterized by the above-mentioned. 前記イオントラップ剤（Ｃ）が、塩素イオン交換容量が２．５ｍｅｑ／ｇ以上のものであり、且つビスマス系化合物及びジルコニア系化合物からなる群から選択される少なくとも一つの無機化合物であることを特徴とする請求項１に記載のフィルム状接着剤。   The ion trapping agent (C) has a chloride ion exchange capacity of 2.5 meq / g or more and is at least one inorganic compound selected from the group consisting of bismuth compounds and zirconia compounds. The film adhesive according to claim 1. 前記ジシクロペンタジエン型固形エポキシ樹脂（Ｂ）が、下記一般式（１）：
Figure 0005160380
 （式（１）中、ｎは０〜１０の整数を表す。）
で表される樹脂であることを特徴とする請求項１又は２に記載のフィルム状接着剤。 The dicyclopentadiene type solid epoxy resin (B) is represented by the following general formula (1):
Figure 0005160380
 (In formula (1), n represents an integer of 0 to 10)
The film adhesive according to claim 1, wherein the film adhesive is a resin represented by the formula: 前記フィルム状接着剤の厚みが１０〜１５０μｍであることを特徴とする請求項１〜３のうちのいずれか一項に記載のフィルム状接着剤。   The thickness of the said film adhesive is 10-150 micrometers, The film adhesive as described in any one of Claims 1-3 characterized by the above-mentioned. 複数の半導体素子を備えている半導体ウェハの一方の表面上に請求項１〜４のうちのいずれか一項に記載のフィルム状接着剤を形成し、前記フィルム状接着剤の表面上にダイシングテープを貼り合せた後に、前記フィルム状接着剤と前記半導体ウェハとを同時にダイシングすることにより接着剤層を備える第１の半導体素子を得る工程と、
前記第１の半導体素子をダイシングテープから脱離し、その後金属ワイヤにより配線基板と電気的に接続されている第２の半導体素子上に、前記金属ワイヤの一部が前記接着剤層に埋まるように、前記第１の半導体素子を接着せしめる工程と、
を含むことを特徴とする半導体パッケージの製造方法。 A film adhesive according to any one of claims 1 to 4 is formed on one surface of a semiconductor wafer provided with a plurality of semiconductor elements, and a dicing tape is formed on the surface of the film adhesive. A step of obtaining a first semiconductor element having an adhesive layer by dicing the film adhesive and the semiconductor wafer simultaneously,
The first semiconductor element is detached from the dicing tape, and then a part of the metal wire is embedded in the adhesive layer on the second semiconductor element electrically connected to the wiring board by the metal wire. Bonding the first semiconductor element;
A method for manufacturing a semiconductor package, comprising: 請求項５に記載の半導体パッケージの製造方法により得られるものであることを特徴とする半導体パッケージ。   A semiconductor package obtained by the method for manufacturing a semiconductor package according to claim 5.
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