CN107851627A - Electron device package, the manufacture method of electron device package and band used for sealing electronic device - Google Patents

Abstract

The present invention, which provides one kind, can suppress bond layer or metal level by external force to peel off, and electron device package, the manufacture method of electron device package and the band used for sealing electronic device that heat generation or reliability reduce.The electron device package of the present invention, it is characterised in that have：Substrate, be connected in a manner of the first face is opposed with the substrate electronic device of the substrate, be arranged at side opposite with first face the electronic device the bond layer in the second face and the metal level in second face for being adhered to the electronic device via the bond layer, the size of the plane in the second face of electronic device described in the size ＜ of the plane of size≤bond layer of the plane of the metal level.

Description

Electron device package, the manufacture method of electron device package and electron device package With band

Technical field

The present invention relates to a kind of electron device package, the manufacture method of electron device package and band used for sealing electronic device, More particularly to a kind of electron device package at the back side of electronic device with metal level, the manufacturer of the electron device package Method and the band used for sealing electronic device for the electron device package.

Background technology

In recent years, the electronic equipment such as portable phone or notebook computer PC requirement further slimming, miniaturization.Therefore, In order to which the slimming of the electron device packages such as the semiconductor packages of electronic equipment, miniaturization will be equipped on, make electronic device or circuit The number of electrodes increase of substrate, and then spacing is also narrowed.This electron device package for example has flip-chip (FC；Flip Chip) installation encapsulation.

In flip-chip installation encapsulation, as noted previously, as the number increase of electrode, or thin space, therefore, thermal discharge Increase turn into problem.Therefore, as flip-chip installation encapsulation heat radiating structure, it is proposed that the back side of electronic device via Bond layer and metal level (referring for example to patent document 1) is set.Moreover, there is the plane of electronic device disclosed in patent document 1 Size and the plane of metal level and bond layer size identical electron device package.

In addition, in flip-chip installation encapsulation, the linear expansivity of electronic device and the linear expansivity of circuit substrate sometimes It is significantly different.In this case, in the manufacturing process of electron device package, when being heated and being cooled down to intermediate, Generation is poor in swell increment and amount of contraction between electronic device and circuit substrate.Due to the difference, produced in electron device package Warpage.As the structure for suppressing this warpage, it was also proposed that set metal level via bond layer at the back side of electronic device (referring for example to patent document 2).In documents 2, disclose compared with the size of the plane of electronic device, bond layer The big electron device package of the size of plane.

And then, it was also proposed that in flip-chip installation encapsulation, set via bond layer at the back side of electronic device Metal level, the metal level is used as to the protective layer of laser labelling (referring for example to patent document 3).Have disclosed in patent document 3 A kind of size of plane of electronic device and the size identical electron device package of the plane of metal level and bond layer.

Prior art literature

Patent document

Patent document 1：Japanese Unexamined Patent Publication 2007-235022 publications

Patent document 2：No. 5487847 publications of Japanese Patent No.

Patent document 3：No. 5419226 publications of Japanese Patent No.

The content of the invention

Invent problem to be solved

But the size of the plane of bond layer is big compared with the size of the plane of electronic device as patent document 2 When, in the case where bond layer applies external force from the part that the outer rim of electronic device protrudes, bond layer can be peeling-off, hair Hot or reliability can reduce.For example, when electron device package is sealed, according to entering in bond layer from electronic device The pressure of the resin of the sealing of side below the part that outer rim protrudes, bond layer be present can shell from the outer edge of electronic device From and heat generation or reliability reduce the problem of.

In addition, the plane of the size of the plane of electronic device and metal level and bond layer as patent document 1,3 In the case of size identical, using bit errors when metal level to fit in electronic device via bond layer, it can produce Bond layer is from the part that the outer rim of electronic device protrudes.Thus, in the same manner as above-mentioned situation, bond layer be present due to outer Power and peel off and the problem of heat generation or reliability reduce.

Therefore, the purpose of the present application is, there is provided a kind of bond layer or metal level by external force to peel off, can be with Suppress electron device package, the manufacture method of electron device package that heat generation or reliability reduce and used for sealing electronic device Band.

For solving the technical scheme of problem

In order to solve the problem of the above, electron device package of the invention is characterised by having：Substrate, with the first face The electronic device of the substrate is connected to the mode that the substrate is opposed, is arranged at the electricity of side opposite with first face The bond layer in the second face of sub- device and second face that is adhered to the electronic device via the bond layer Metal level, the second face of electronic device described in the size ＜ of the plane of size≤bond layer of the plane of the metal level Plane size.

For above-mentioned electron device package, preferably described metal level contains copper or aluminium.

In addition, in order to solve the problem of the above, the manufacture method of electron device package of the invention is characterised by having Following process：Electronic device is connected to the process of the substrate in a manner of the first face is opposed with the substrate；With it is described On second face of the electronic device of the opposite side in the first face via bond layer the process of bonding metal layer, the metal level Plane size≤bond layer plane size ＜ described in electronic device the second face plane size.

The preferably described metal level of the manufacture method of above-mentioned electron device package contains copper or aluminium.

In addition, in order to solve the problem of the above, above-mentioned band used for sealing electronic device, it is characterised in that as described below：It is described Band used for sealing electronic device has：Adhesive tape with base material film and adhesive phase and be stacked on described adhesive layer with institute The bond layer and the laminated body of metal level stated the opposite side of base material film and set, the metal level glue via the bond layer It is connected to the of side electronic device, opposite with first face that the substrate is connected in a manner of the first face is opposed with substrate On two faces, with electronic device described in the size ＜ of the plane of the size of the plane as the metal level≤bond layer The mode of the size of the plane in the second face, the bond layer and the metal level are initially switched off in advance and singualtion.

In addition, the above-mentioned preferably described metal level of band used for sealing electronic device contains copper or aluminium.

Invention effect

In accordance with the invention it is possible to suppress bond layer or metal level by external force to peel off, heat generation or reliability reduce.

Brief description of the drawings

Fig. 1 is the sectional view of the structure for the electron device package for schematically showing embodiments of the present invention.

Fig. 2 is the sectional view of the structure for the band used for sealing electronic device for schematically showing embodiments of the present invention.

Fig. 3 (a) is the top view of the structure for the band used for sealing electronic device for schematically showing embodiments of the present invention, (b) it is same sectional view.

Fig. 4 is the stereogram of the structure for the band used for sealing electronic device for schematically showing embodiments of the present invention.

Fig. 5 is the explanation figure of the manufacture method for the band used for sealing electronic device for schematically showing embodiments of the present invention, (A) It is the longitudinal direction sectional view for the bonding process for representing metal level, (B) is the longitudinal direction section view for the bonding process for representing bond layer Figure, (C) are the transverse direction sectional views for representing precut process, and (D) is the stereogram for the removal step for representing unnecessary portion.

Fig. 6 is the explanation figure of the manufacture method for the band used for sealing electronic device for schematically showing embodiments of the present invention, (A) It is the transverse direction sectional view for the bonding process for representing adhesive tape, (B) is the transverse direction sectional view for representing precut process, and (C) is Represent the transverse direction sectional view of the removal step of unnecessary portion.

Fig. 7 is the sectional view of the manufacture method for the electron device package for schematically illustrating embodiments of the present invention.

Fig. 8 is the sectional view of the manufacture method for the electron device package for schematically illustrating embodiments of the present invention.

Fig. 9 is the sectional view of the structure for the electron device package for schematically showing other embodiments of the present invention.

Embodiment

Hereinafter, embodiments of the present invention are described in detail.

Fig. 1 is the sectional view of the structure for the electron device package 8 for schematically showing embodiments of the present invention.Need It is bright, in the present embodiment, as electron device package 8, to have carried out the half of flip-chip connection in adherend Illustrated exemplified by conductor chip C.

The electron device package 8 has substrate 9, opposed with substrate 9 with the first face C1 (circuit face formed with circuit) Mode, make semiconductor chip C projection 10 by using flip-chip welding manner (flip-chip mounting means) and be attached to The conductive material 11 (solder etc.) for connecting the engagement of pad is conducted, and semiconductor chip C is connected with substrate 9.

Bond layer 4 is provided with the second face (back side) of side opposite with semiconductor chip C the first face C1, it is viscous via this Connect oxidant layer 4 and be bonded with metal level 3.Semiconductor chip C the second face C2, bond layer 4, metal level 3 plane size into For the ＜ semiconductor chips C of metal level 3=bond layers 4 the second face C2.

By the size of the size ＜ semiconductor chips C of the plane that is set to bond layer 4 the second face C2 plane, do not have Bond layer 4 is from the semiconductor chip C outer rim part prominent to in-plane.Therefore, it is possible to suppress to apply bond layer 4 External force, bond layer 4 are peeled off from semiconductor chip C outer edge.In addition, because size=viscous as the plane of metal level 3 The size of the plane of oxidant layer 4 is connect, so also without metal level 3 from the outer rim of bond layer 4 part prominent to in-plane.Cause This, can suppress to apply metal level 3 external force, metal level 3 is peeled off from the outer edge of bond layer 4.

The flat shape of bond layer 4 is preferably the substantially similar shape of flat shape with semiconductor chip C, be may not be Similar figures.In the case of not being similar figures, the length for forming the side of the flat shape of bond layer 4 is to fit in semiconductor core Corresponding to being formed on piece C direction below the length on the side of semiconductor chip C flat shape.If the plane of bond layer 4 Plane of the area than semiconductor chip C area it is small, then form bond layer 4 flat shape side length with being bonded In on semiconductor chip C direction the corresponding flat shape for forming semiconductor chip C while length can be identical while, But due to requiring high precision in the contraposition when carrying bond layer 4 on semiconductor chip C, therefore, from the viewpoint of carrying property Set out, the length for forming the side of the flat shape of bond layer 4 is preferably more corresponding than on the direction for fitting in semiconductor chip C The length for forming the side of semiconductor chip C flat shape is small.The area of the plane of bond layer 4 is preferably semiconductor chip C Plane area 80% less than 100%, more preferably less than more than 90% 96%.If bond layer 4 is flat The area in face is more than the 80% of the area of semiconductor chip C plane, then can obtain sticking up for heat generation or electron device package The effect that song suppresses.Additionally, it is contemplated that during deviation in the precision being equipped on semiconductor chip C or manufacture, in order to from semiconductor Do not spilt in chip C and bond layer 4 and metal level 3 can be carried, the area of the plane of bond layer 4 is preferably semiconductor core Less than the 96% of the area of piece C plane.

It should be noted that in the present embodiment, it is set to the plane of size=bond layer 4 of the plane of metal level 3 Size, but as shown in figure 9, the size of the plane of the size ＜ bond layers 4 of the plane of metal level 3 can also be set to.The feelings Under condition, the flat shape of metal level 3 is preferably the substantially similar shape of flat shape with bond layer 4, but be may not be similar Shape.In the case where being not similar figures, the length for forming the side of the flat shape of metal level 3 is to fit in bond layer 4 On direction below the length on the side of the corresponding flat shape for forming bond layer 4.The area of the plane of metal level 3 is preferably half The 80% of the area of conductor chip C plane is less than 100%, more preferably less than more than 90% 95%.If metal The area of the plane of layer 3 is more than the 80% of the area of semiconductor chip C plane, then can obtain heat generation or electronic device envelope The effect that the warpage of dress suppresses.

As adherend, the various substrates 9 such as lead frame or circuit substrate (wired circuit board etc.) can be used.As The material of this substrate 9, is not particularly limited, and can include ceramic substrate or plastic base.As plastic base, can enumerate Go out for example：Epoxy substrate, Bismaleimide Triazine substrate, polyimide substrate etc..In addition, by by other semiconductor chips Adherend is set to, above-mentioned semiconductor chip C is subjected to flip-chip connection, chip stack chip structure can also be set to.

Fig. 2 is the sectional view for the band used for sealing electronic device 1 for representing embodiments of the present invention.This is used for sealing electronic device It can be used for manufacturing above-mentioned electron device package 8 with 1.Band 1 used for sealing electronic device has by base material film 51 and is arranged at base The adhesive tape 5 that adhesive phase 52 on material film 51 is formed, the lamination of bond layer 4 and metal level 3 is provided with adhesive phase 52 Body.In the present embodiment, bond layer 4 and the metal level for being stacked on bond layer 4 and setting are set on adhesive phase 52 3.The laminated body of bond layer 4 and metal level 3 is included and folded indirectly via for making good prime coat of both adaptations etc. The mode of layer.

As shown in Figures 3 and 4, adhesive tape 5 is cut into and ring framework R (reference pictures the band used for sealing electronic device 1 of the present invention 8) shape corresponding to, metal level 3 and bond layer 4 it is also preferred that corresponding and be cut into regulation shape (precut processing), Precut processing is carried out in present embodiment.

The band used for sealing electronic device 1 of the present invention as shown in Figures 3 and 4, preferably will have metal formed with multiple laminations Layer 3, bond layer 4, be cut into shape corresponding with ring framework R adhesive tape 5 (label portion 5a) laminated body banding base The form of the wound into rolls of material band 2, is wound into web-like in the present embodiment, but the laminated body for being arranged at substrate tape 2 also may be used Think each 1 cut-off form.

When carrying out precut processing and wound into rolls, as shown in Figures 3 and 4, band 1 used for sealing electronic device has base Material band 2, it is provided with substrate tape 2：Metal level 3 with defined flat shape, in the side phase of substrate tape 2 with metal level 3 Toss about with the lamination of metal level 3 and set and bond layer 4 with defined flat shape and covering bond layer 4 and viscous Meet the label portion 5a of flat shape with as defined in set around oxidant layer 4 in a manner of being contacted with substrate tape 2 and surround and be somebody's turn to do The periphery 5b in label portion 5a outside adhesive tape 5.

Label portion 5a has shape corresponding with incisory ring framework R.It is corresponding with incisory ring framework R shape It is preferably shaped to and ring framework R inner side same shape and the similar figures bigger than the size on the inside of ring framework R.In addition, Differ and be set to circle, but be preferably close to the shape of circle, more preferably circle.Periphery 5b is included surrounds label completely The form do not surrounded completely as the form and diagram in portion 5a outside.It should be noted that periphery 5b can not also be set Put.

And then metal level 3 and bond layer 4 are with the plane of size=bond layer 4 of the plane as predetermined metal layer 3 Size ＜ metal levels 3 and the mode of size of plane in the second face of electronic device of fitting of bond layer 4 be initially switched off in advance And singualtion.In the present embodiment, it is set to the size of the plane of size=bond layer 4 of the plane of metal level 3, but can be with It is set to the size of the plane of the size ＜ bond layers 4 of the plane of metal level 3.Size, bonding agent on the plane of metal level 3 The size of the size of the plane of layer 4 and the plane in the second face of electronic device, such as embodiment party in above-mentioned electron device package As illustrated by formula.

For bond layer 4, global shape that monolithic assembles has a defined label shape, the label shape it is outer Edge turns into is bonded ring framework R in the label portion 5a of adhesive tape 5 peripheral part, with the side that can be jacked up with the jack-up part of picks up device Formula (reference picture 8) shape small compared with label portion 5a.The label shape of bond layer 4 is preferably roughly the same with label portion 5a Shape and the similar figures smaller than label portion 5a size.The label shape of bond layer 4, which differs, is set to circle, but is preferably close to In the shape of circle, more preferably circle.

For metal level 3, the global shape that monolithic assembles turns into the shape same with bond layer 4, in metal level 3 Superimposed layer has bond layer 4.As long as lamination major part said here is stacked, metal level 3 and bond layer 4 differ Surely need for identical size, but from the aspect of the convenience of manufacture, preferably same shape.Hereinafter, to each structure Illustrated into key element.

The ＞ of ＜ substrate tape 2

Substrate tape 2 can also be made up of known barrier film, but can also directly use the pre-cut for band used for sealing electronic device Cut the substrate tape of processing.In the case where directly using the substrate tape for the precut processing of band used for sealing electronic device, base Material band 2 is necessary metal level 3 carrying out bonding holding in precut processing, such as preferably using resin film and can be arranged at The band of the substrate tape adhesive phase of the one side of resin film.

Known material can be used by forming the raw material of the resin film of substrate tape 2, but if being illustrated, then can be enumerated Go out polyester (PET, PBT, PEN, PBN, PTT) system, polyolefin (PP, PE) system, in addition copolymer (EVA, EEA, EBA) system, replacement These materials are a part of and further increase cementability or the film of mechanical strength.Furthermore it is possible to the laminated body for these films.From Heat resistance, flatness and from the aspect of obtaining easy degree, preferably from polyethylene terephthalate, polypropylene and highly dense Selected in degree polyethylene.

The thickness for forming the resin film of substrate tape 2 is not particularly limited, and can suitably set, preferably 10~150 μm.

As substrate tape with the resin used in adhesive phase, the known chlorinated polypropylene for adhesive can be used Resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin etc., are preferably polymerize based on acrylic acid series polymeric compounds The acrylic adhesive of thing.

As acrylic acid series polymeric compounds, can include (methyl) alkyl acrylate (such as methyl esters, ethyl ester, third for example It is ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2- ethylhexyls, different Monooctyl ester, nonyl ester, decyl, isodecyl, hendecane base ester, dodecyl ester, tridecane base ester, tetradecane base ester, cetyl ester, The straight-chain or side chain of the carbon number 1~30 of the alkyl such as stearyl, eicosane base ester, particularly carbon number 4~18 Arrcostab of shape etc.) and (methyl) acrylate base ester (such as ring pentyl ester, cyclohexyl etc.) it is one kind or two or more be used as it is single Acrylic acid series polymeric compounds of body composition etc..In addition, (methyl) acrylate refers to acrylate and/or methacrylate, it is The completely same meaning with (methyl) of the present invention.

Acrylic acid series polymeric compounds can contain above-mentioned (methyl) as needed for the purpose of cohesive force, heat resistance etc. are modified Alkyl acrylate or the corresponding unit of other monomer components with that can be copolymerized with cycloalkyl ester., can as this monomer component Include for example：Acrylic acid, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) acrylic acid carboxyl pentyl ester, clothing health The carboxylic monomer such as acid, maleic acid, fumaric acid, butenoic acid；The anhydride monomers such as maleic anhydride, itaconic anhydride；(methyl) propylene Sour 2- hydroxyl ethyl esters, (methyl) acrylic acid 2- hydroxypropyl acrylates, (methyl) acrylic acid 4- hydroxy butyl esters, the own ester of (methyl) acrylic acid 6- hydroxyls, (first Base) acrylic acid 8- hydroxyls monooctyl ester, (methyl) acrylic acid 10- hydroxyls last of the ten Heavenly stems ester, (methyl) acrylic acid 12- hydroxylaurics ester, (methyl) propylene The monomer of the hydroxyls such as sour (4- Hydroxymethyl-cyclo-hexyls) methyl esters；Styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acryloyl Amine -2- methyl propane sulfonic acids, (methyl) acrylamide propane sulfonic acid, sulfapropyl (methyl) acrylate, (methyl) acryloxy Naphthalene sulfonic acids etc. contains sulfonic monomer；The monomer of the phosphorous acidic groups such as 2- hydroxyethyl acryloyl phosphates；Acrylamide, propylene Nitrile etc..These copolymerizable monomer components can use one kind or two or more.The usage amount of these copolymerizable monomers is preferably total Below the 40 weight % of monomer component.

And then acrylic acid series polymeric compounds can also contain the conducts such as multi-functional monomer as needed to be crosslinked Comonomer composition.As this multi-functional monomer, can include for example：Hexylene glycol two (methyl) acrylate, (poly-) Ethylene glycol two (methyl) acrylate, (poly-) propane diols two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, season Penta tetrol two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, (methyl) acrylic acid epoxy ester, polyester (methyl) acrylate, carbamate (methyl) acrylate etc..These multi-functional monomers can also use one kind or two or more.With regard to the use of multi-functional monomer For amount, consider from adhesion characteristic etc., preferably below the 30 weight % of total monomer composition.

The preparation of acrylic acid series polymeric compounds can be applicable molten in the mixture of for example one kind or two or more element monomers The appropriate mode such as liquid polymerization methodses or emulsion polymerization way, polymerisation in bulk mode or suspension polymerisation mode and carry out.From preventing Pollution of chip etc. considers that substrate tape preferably inhibits the composition contained of low molecular weight substance with adhesive phase, from upper From the aspect of stating, it is also preferred that using weight average molecular weight as based on more than 300,000, special 400,000~3,000,000 acrylic acid series polymeric compounds Composition, therefore, adhesive can also be set to the appropriate cross-linking type using internal crosslinking mode or outside crosslinking method etc..

In addition, in order to control the crosslink density of substrate tape adhesive phase and improve the fissility with adhesive tape 5, can adopt With for example using polyfunctional isocyanate's based compound, multi-functional epoxy's based compound, melamine based compound, metal salt system The appropriate external crosslinkers such as compound, metallo-chelate based compound, amino resins based compound or peroxide are handed over Join the mode of processing, or the photograph that the low molecular compound with the carbon-to-carbon double bond of more than 2 is mixed and passes through energy line The appropriate modes such as the mode for carrying out crosslinking Treatment such as penetrate.In the case of using external crosslinker, its usage amount is according to waiting to hand over The balance of the base polymer of connection and then suitably determined according to the use as adhesive.In general, relative to upper The parts by weight of base polymer 100 are stated, preferably coordinate 20 parts by weight or so following and then 0.1 parts by weight~20 parts by weight.

The thickness of substrate tape adhesive phase determines without special limitation ground is appropriate, it is however generally that is 5~200 μm of left sides It is right.In addition, substrate tape can be made up of with adhesive phase individual layer, can also be made up of multilayer.

The ＞ of ＜ adhesive tapes 5

As adhesive tape 5, it is not particularly limited, existing adhesive tape can be used.As adhesive tape 5, such as can preferably make With the adhesive tape that adhesive phase 52 is provided with base material film 51.

As base material film 51, as long as existing known base material film, it is possible to use without particular limitation, but use is put In the case that the material of ray-curable is as adhesive phase 52 described later, preferably using the base material with radioactive ray permeability Film.

For example, as its material, can enumerate：Polyethylene, polypropylene, ethylene-propylene copolymer, PB Polybutene-1, poly- 4- Methylpentene -1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, The homopolymer or copolymer or their mixture of the alpha-olefins such as ethylene-acrylic acid copolymer, ionomer, polyurethane, benzene second The thermoplastic elastomer (TPE) such as alkene-Ethylene/Butylene or amylene based copolymer, polyamide-polyol copolymer and their mixture. In addition, base material film can be the base material film that the material of more than two kinds in these groups is mixed into, these base material films can be carried out Single or multiple lift.

The thickness of base material film 51 is not particularly limited, and can suitably set, preferably 50~200 μm.

In order to improve the adaptation of base material film 51 and adhesive phase 52, the surface of base material film 51 can be implemented at chromic acid Reason, ozone exposure, fire exposure, high-voltage electric shock exposure, ionizing radiation processing etc. are chemically or physical surface treatment.

In addition, in the present embodiment, adhesive phase 52 is directly set on base material film 51, but can also via for Anchor layer of machinability, stress relaxation layer, antistatic backing when improving the prime coat of adaptation or being cut for improving etc. and Ground connection is set.

As the resin used in the adhesive phase 52 of adhesive tape 5, it is not particularly limited, can uses for adhesive Known chlorinated polypropylene, acrylic resin, polyester resin, polyurethane resin, epoxy resin etc., preferably with acrylic acid series The acrylic adhesive of polymer based on polymer.

As acrylic acid series polymeric compounds, can include (methyl) alkyl acrylate (such as methyl esters, ethyl ester, third for example It is ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2- ethylhexyls, different Monooctyl ester, nonyl ester, last of the ten Heavenly stems ester, isodecyl ester, hendecane base ester, dodecyl ester, tridecane base ester, tetradecane base ester, cetyl ester, The carbon number 1~30 of the alkyl such as stearyl, eicosane base ester, the straight-chain or branched of special carbon number 4~18 Arrcostab etc.) and the one kind or two or more of (methyl) acrylate base ester (such as ring pentyl ester, cyclohexyl etc.) be used as monomer Acrylic acid series polymeric compounds of composition etc..In addition, (methyl) acrylate refers to acrylate and/or methacrylate, be with The whole same meanings of (methyl) of the present invention.

Acrylic acid series polymeric compounds for the purpose of cohesive force, heat resistance etc. are modified, can contain as needed with can with it is above-mentioned Unit corresponding to (methyl) alkyl acrylate or other monomer components of cycloalkyl ester copolymerization., can as this monomer component Include for example：Acrylic acid, methacrylic acid, carboxy ethyl (methyl) acrylate, carboxy pentyl (methyl) acrylate, clothing The carboxylic monomers such as health acid, maleic acid, fumaric acid, butenoic acid；The anhydride monomers such as maleic anhydride, itaconic anhydride；(methyl) third Olefin(e) acid 2- hydroxyl ethyl esters, (methyl) acrylic acid 2- hydroxypropyl acrylates, (methyl) acrylic acid 4- hydroxy butyl esters, the own ester of (methyl) acrylic acid 6- hydroxyls, (methyl) acrylic acid 8- hydroxyls monooctyl ester, (methyl) acrylic acid 10- hydroxyls last of the ten Heavenly stems ester, (methyl) acrylic acid 12- hydroxylaurics ester, (4- hydroxyls Methylcyclohexyl) hydroxyl such as methyl (methyl) acrylate monomer；Styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) third Acrylamide -2- methyl propane sulfonic acids, (methyl) acrylamide propane sulfonic acid, sulfapropyl (methyl) acrylate, (methyl) acryloyl Epoxide naphthalene sulfonic acids etc. contains sulfonic monomer；The monomer of the phosphorous acidic groups such as 2- hydroxyethyl acryloyl phosphates；Acrylamide, Acrylonitrile etc..These copolymerizable monomer components can use one kind or two or more.The usage amount of these copolymerizable monomers is excellent Select below the 40 weight % of total monomer composition.

And then acrylic acid series polymeric compounds can also contain the conducts such as multi-functional monomer as needed to be crosslinked Comonomer composition.As this multi-functional monomer, can include for example：Hexylene glycol two (methyl) acrylate, (poly-) Ethylene glycol two (methyl) acrylate, (poly-) propane diols two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, season Penta tetrol two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, (methyl) acrylic acid epoxy ester, polyester (methyl) acrylate, carbamate (methyl) acrylate etc..These multi-functional monomers can also use one kind or two or more.With regard to the use of multi-functional monomer For amount, consider from adhesion characteristic etc., preferably below the 30 weight % of total monomer composition.

Preparing for acrylic acid series polymeric compounds can be in the mixture of for example one kind or two or more element monomers using molten The appropriate mode such as liquid polymerization methodses or emulsion polymerization way, polymerisation in bulk mode or suspension polymerisation mode and carry out.Adhesive Layer 52 preferably inhibits the compositions contained of low molecular weight substance, from the aspect of above-mentioned, it is also preferred that using weight average molecular weight as More than 300000, the acrylic acid series polymeric compounds for being particularly 400,000~3,000,000 are principal component, and therefore, adhesive can also be set to utilize The appropriate cross-linking type of internal crosslinking mode or outside crosslinking method etc..

In addition, in order to control the crosslink density of adhesive phase 52 and the raising property picked up, can use for example using multifunctional Isocyanates based compound, multi-functional epoxy's based compound, melamine based compound, metal salt based compound, metal-chelating The appropriate external crosslinker such as thing based compound, amino resins based compound or peroxide carries out the mode of crosslinking Treatment, or Irradiation for mixing and pass through energy line the low molecular compound with the carbon-to-carbon double bond of more than 2 etc. is carried out at crosslinking The appropriate mode such as the mode of reason.In the case of using external crosslinker, its usage amount according to base polymer to be crosslinked Balance so that suitably determined according to the use as adhesive.In general, relative to above-mentioned base polymer 100 parts by weight, preferably coordinate that 20 parts by weight or so are following, the parts by weight of further 0.1 parts by weight~20.In addition, in adhesive, From viewpoints such as anti-deteriorations, as needed, in addition to the above ingredients, various bonding imparting agents, antiaging agent can also be used Deng additive.

As the adhesive for forming adhesive phase 52, preferably radiation-curing type adhesive.Glued as radiation-curing type Mixture, the oligomeric of the monomer component that radiation-curable is combined with foregoing adhesive or radiation-curable can be illustrated in The radiation-curing type adhesive of the addition type of thing composition.

As the monomer component of the radiation-curable of cooperation, can include for example：Carbamate (methyl) acrylic acid Ester, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, pentaerythrite three (methyl) Acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol Six (methyl) acrylate, 1,4- butanediols two (methyl) acrylate etc..These monomer components can be used together a kind or 2 kinds with On.

In addition, the oligomer composition of radiation-curable can include polyurethane series, polyethers system, Polyester, makrolon The various oligomer such as system, polybutadiene system, but its molecular weight is appropriate for the material of 100~30000 or so scope.Radiation The monomer component of line curability or the use level of oligomer composition can suitably determine according to the species of above-mentioned adhesive phase 52 The amount of the bonding force of adhesive phase 52 can be reduced.In general, relative to bases such as the acrylic acid series polymeric compounds for forming adhesive The parts by weight of the parts by weight of plinth polymer 100, for example, 5 parts by weight~500, the parts by weight of preferably 70 parts by weight~150 or so.

In addition, as radiation-curing type adhesive, in addition to the radiation-curing type adhesive of above-mentioned addition type, also may be used Include using in polymer lateral chain or main chain or main chain terminal has based on the material of carbon-to-carbon double bond in polymer In the radiation-curing type adhesive of type.The radiation-curing type adhesive of inherent type need not contain as low molecular composition Oligomer composition etc., or because content is few, therefore, oligomer composition etc. will not through when moved in adhesive, can be with shape Into the adhesive phase 52 of stable Rotating fields, therefore preferably.

Base polymer with carbon-to-carbon double bond can without particular limitation use with carbon-to-carbon double bond and with viscous The material of conjunction property.As this base polymer, it is also preferred that using acrylic acid series polymeric compounds as basic framework.Gather as acrylic acid series The basic framework of compound, foregoing illustrative acrylic acid series polymeric compounds can be included.

The introductory technique of acrylic acid series polymeric compounds is not particularly limited carbon-to-carbon double bond, can use various methods, But it is easy in MOLECULE DESIGN that carbon-to-carbon double bond, which is directed in polymer lateral chain,.Such as following methods can be included：In advance third After the monomer with functional group is copolymerized in olefin(e) acid based polymer, by with can with the functional groups of the functional group reactionses and The compound of carbon-to-carbon double bond still maintains the radiation-curable of carbon-to-carbon double bond and is condensed or addition reaction.

As the example of the combination of these functional groups, can include：Carboxylic acid group and epoxy radicals, carboxylic acid group and '-aziridino, Hydroxyl and NCO etc..In the combination of these functional groups, from the aspect of the easy degree of reactive tracing, preferably hydroxyl and The combination of NCO.As long as the in addition, above-mentioned acrylic acid with carbon-to-carbon double bond of combination producing using these functional groups The combination of based polymer, then functional group can be the either side of acrylic acid series polymeric compounds and above-claimed cpd, but above-mentioned preferred Combination in, preferably acrylic acid series polymeric compounds have a case that NCO with hydroxyl, above-claimed cpd.In this case, As the isocyanate compound with carbon-to-carbon double bond, can include for example：Methacryloyl isocyanate, 2- methyl-props Alkene trimethylammonium isocyanates, an isopropenyl-bis (alpha, alpha-dimethylbenzyl) based isocyanate etc..In addition, gather as acrylic acid series Compound, it can be used the monomer or 2- hydroxyethyl vinyl ethers of foregoing illustrative hydroxyl, 4- hydroxybutyl vinyl ethers, two The material that ether based compound such as ethylene glycol monovinyl ether etc. is copolymerized and formed.

The radiation-curing type adhesive of inherent type can be used alone the above-mentioned base polymer with carbon-to-carbon double bond (particularly acrylic acid series polymeric compounds), but can also be not make the degree that characteristic is deteriorated coordinate the monomer of above-mentioned radiation-curable The photopolymerizable compound such as composition or oligomer composition.The use level of the photopolymerizable compound is relative to base polymer 100 Parts by weight are usually in the scope below 30 parts by weight, in the range of preferably 0~10 parts by weight.

In radiation-curing type adhesive, light contains polymerization and drawn preferably in the case where solidifying it using ultraviolet etc. Send out agent.

In above-mentioned acrylic acid series polymeric compounds, particularly preferably contain CH₂(in formula, R is that carbon number is 4 to=CHCOOR ~18 alkyl.) represent acrylate, hydroxyl monomer and intramolecular there is the different of free-radical reactive carbon-to-carbon double bond Cyanate esters and the acrylic acid series polymeric compounds A formed.

When the carbon number of the alkyl of alkyl acrylate is less than 4, polarity is high sometimes and peeling force is excessive and the property picked up drops It is low.On the other hand, when the carbon number of the alkyl of alkyl acrylate is more than 18, the glass transition temperature mistake of adhesive phase 52 Height, the adhesion properties under normal temperature reduce, as a result, producing the stripping of metal level 3 in cutting sometimes.

Aforesaid propylene acid based polymer A can contain unit corresponding with other monomer components as needed.

In acrylic acid series polymeric compounds A, the isocyanate compound with free-radical reactive carbon-to-carbon double bond can be used.That is, Acrylate copolymer preferably has will in the polymer using monomer compositions such as the monomers of aforesaid propylene acid esters or hydroxyl Double bond containing isocyanate compound has carried out the composition of addition reaction.Therefore, acrylic acid series polymeric compounds are preferably in its molecule knot There is free-radical reactive carbon-to-carbon double bond in structure.Thus, it is possible to it is set to by the irradiation of active energy ray (ultraviolet etc.) and solid The active energy line solidification type adhesive layer (ultraviolet-curing adhesive layer etc.) of change, can make metal level 3 and adhesive phase 52 peeling force reduces.

As double bond containing isocyanate compound, can include for example：Methacryloyl isocyanate, acryloyl group Isocyanates, 2- methacryloxyethyls isocyanates, 2- acryloyloxyethyl isocyanates, an isopropenyl-α, α-dimethylbenzyl isocyanates etc..Double bond containing isocyanate compound can be used alone or combine two or more and use.

In addition, in active energy line solidification type adhesive, in order to adjust the bonding force of active energy ray pre-irradiation or living Property energy line irradiation after bonding force, external crosslinker can also be suitably used.Specific side as outside cross-linking method Method, the institutes such as addition polyisocyanate compounds, epoxide, aziridine cpd, melamine series crosslinking agent can be included The crosslinking agent of meaning and the method reacted.In the case of using external crosslinker, its usage amount is according to the base with that should be crosslinked The balance of plinth polymer and then suitably determined according to the use as adhesive.The usage amount of external crosslinker is general For, relative to the above-mentioned parts by weight of base polymer 100, it is (preferably 0.1 parts by weight~10 parts by weight) below 20 parts by weight.Enter And in active energy line solidification type adhesive, as needed, in addition to the above ingredients, it can coordinate existing known various Bond the additives such as imparting agent, antiaging agent, foaming agent.

The thickness of adhesive phase 52 is not particularly limited, and can suitably determine, but is in general 5~200 μm or so. In addition, adhesive phase 52 can be made up of individual layer, can also be made up of multilayer.

The ＞ of ＜ metal levels 3

As form metal level 3 metal, be not particularly limited, for example, from prevent heat generation, electron device package 8 warpage From the aspect of, it is preferably selected from least one kind of in the group that is made up of stainless steel, aluminium, iron, titanium, tin, nickel and copper.In these metals, From the viewpoint of the effect that heat conductivity is high and can be generated heat, particularly preferably contain copper.In addition, from preventing electronic device from sealing From the viewpoint of filling 8 warpage, particularly preferably contain aluminium.

The thickness of metal level 3 is 5 μm less than 200 μm.By being set to more than 5 μm, can obtain heating effect or The inhibition of the warpage of encapsulation.In addition, if less than 200 μm, then coiling process is easy.

The ＞ of ＜ bond layers 4

Bond layer 4 is that bonding agent has been carried out to the layer of membranization in advance.

Bond layer 4 is preferably at least formed by heat-curing resin, at least by heat-curing resin and thermoplastic resin shape Into.

As thermoplastic resin, can include for example：Natural rubber, butyl rubber, isoprene rubber, chlorobutylene rubber Glue, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polybutadiene, Polyamide, phenoxy resin, the propylene such as polycarbonate resin, thermoplastic polyimide resin, 6- nylon or 6,6- nylon The saturated polyester resins such as acid resin, PET (polyethylene terephthalate) or PBT (polybutylene terephthalate (PBT)), gather Amide imide resin or fluororesin etc..Thermoplastic resin may be used singly or in combination of two or more kinds.These thermoplastic resins In, and stress retentivity excellent aspect few in ionic impurity is acrylic resin, is high tenacity having both flexible and intensity Aspect is phenoxy resin, can be with it is easy to ensure that the reliability of semiconductor element, therefore particularly preferably in respective viewpoint.

As acrylic resin, it is not particularly limited, can includes with carbon number (preferably carbon number below 30 1~18) the one kind or two or more polymer for composition of the ester of the acrylic or methacrylic acid of the alkyl of straight or branched Deng.That is, in the present invention, acrylic resin is the meaning of the also broad sense comprising methacrylic resin.As abovementioned alkyl, can arrange Enumerate for example：Methyl, ethyl, propyl group, isopropyl, normal-butyl, the tert-butyl group, isobutyl group, amyl group, isopentyl, hexyl, heptyl, 2- Ethylhexyl, octyl group, iso-octyl, nonyl, isononyl, decyl, isodecyl, undecyl, dodecyl (lauryl), tridecane Base, myristyl, stearyl, octadecyl etc..

In addition, as other monomers for forming acrylic resin, (carbon number of alkyl is less than 30 acrylic acid Or the monomer beyond the Arrcostab of methacrylic acid), it is not particularly limited, can includes for example：Acrylic acid, methacrylic acid, Carboxyethyl acrylate, carboxy pentyl acrylate, itaconic acid, maleic acid, fumaric acid or butenoic acid or the like contain carboxyl The anhydride monomers of monomer, maleic anhydride or itaconic anhydride or the like, (methyl) acrylic acid 2- hydroxyl ethyl esters, (methyl) acrylic acid 2- Hydroxypropyl acrylate, (methyl) acrylic acid 4- hydroxy butyl esters, the own ester of (methyl) acrylic acid 6- hydroxyls, (methyl) acrylic acid 8- hydroxyls monooctyl ester, (methyl) Acrylic acid 10- hydroxyls last of the ten Heavenly stems ester, (methyl) acrylic acid 12- hydroxylaurics ester or (4- Hydroxymethyl-cyclo-hexyls)-methacrylate etc. Etc hydroxyl monomer, styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamide-2-methyl propane sulfonic, (methyl) Acrylamide propane sulfonic acid, sulfapropyl (methyl) acrylate or (methyl) propane sulfonic acid or the like contain sulfonic group Monomer or 2- hydroxyethyl acryloyl phosphates or the like the monomer of phosphorous acidic group etc..In addition, (methyl) acrylic acid is Refer to acrylic acid and/or methacrylic acid, be (methyl) whole same meanings with the present invention.

In addition, as heat-curing resin, epoxy resin, phenolic resin and amino resins can be included, unsaturation is gathered Ester resin, polyurethane resin, silicone resin, Thermocurable polyimide resin etc..Heat-curing resin can be used alone or And use two or more.As heat-curing resin, particularly preferably make the amounts such as the ionic impurity of semiconductor element corrosion few Epoxy resin.In addition, as the curing agent of epoxy resin, it is preferable to use phenolic resin.

As epoxy resin, it is not particularly limited, can uses for example：Bisphenol A type epoxy resin, bisphenol F type epoxy tree Fat, bisphenol-s epoxy resin, brominated bisphenol a type epoxy resin, bisphenol-A epoxy resin, bisphenol AF type epoxy resin, Biphenyl type epoxy resin, naphthalene type epoxy resin, fluorenes type epoxy resin, phenolic resin varnish type epoxy resin, o-cresol novolak Two functional epoxy resins such as type epoxy resin, trihydroxy benzene methylmethane type epoxy resin, four phenylol ethane type epoxy resin or Polyfunctional epoxy resin or hydantoins type epoxy resin, triglycidyl group isocyanurate type epoxy resin shrink sweet The epoxy resin such as oil base amine type epoxy resin.

As epoxy resin, phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, three hydroxyls in particularly preferably illustrating Base phenylmethane type epoxy resin, four phenylol ethane type epoxy resin.Because these epoxy resin are imbued with being used as admittedly The reactivity of the phenolic resin of agent, heat resistance etc. are excellent.

And then phenolic resin is the material to be worked as the curing agent of epoxy resin, can be included for example：Novolaks The phenol such as resin, phenol aralkyl resin, cresol novolac resin, tert-butyl group novolac resin, nonyl novolac resin Novolac type phenolic resin, cresols type phenolic resin, gather to polyoxy styrene such as oxygen styrene etc..Phenolic resin can individually make With or and use two or more.In these phenolic resin, particularly preferred novolac resin, phenol aralkyl resin.Because The connection reliability of semiconductor device can be improved.

The mixing ratio of epoxy resin and phenolic resin is preferably for example with the every 1 equivalent phenol of epoxy radicals in epoxy resin ingredient The mode that hydroxyl in urea formaldehyde turns into the equivalent of 0.5 equivalent~2.0 coordinates.The equivalent of more preferably 0.8 equivalent~1.2.That is, this is Because when both mixing ratios deviate above range, it is impossible to carry out sufficient curing reaction, the spy of epoxy resin cured product Property easily deteriorates.

Alternatively, it is also possible to use the thermal curing accelerator of epoxy resin and phenolic resin.Promote to urge as heat cure Agent, it is not particularly limited, can suitably selects and use from known thermal curing accelerator.Heat cure promotes catalysis Agent can be used alone or combine two or more and use.As thermal curing accelerator, such as amine system solidification can be used to promote Enter agent, phosphorus system curing accelerator, imidazoles system curing accelerator, boron system curing accelerator, phosphorus-boron system curing accelerator etc..

As the curing agent of epoxy resin, phenolic resin is preferably used as described above, but can also use imidazoles, amine Curing agent known to class, anhydrides etc..

It is important that bond layer 4 has cementability (adaptation) for the adherend such as electronic device 9.Therefore, in order to Bond layer 4 is crosslinked in a way in advance, can also add anti-with the functional group of the molecule chain end of polymer etc. The multi-functional compounds answered are as crosslinking agent.Thus, it is possible to the adhesion properties under improving high temperature, seek the improvement of heat resistance.

As crosslinking agent, it is not particularly limited, known crosslinking agent can be used.Specifically, can include for example：It is different Cyanate system crosslinking agent, epoxy crosslinking agent, melamine series crosslinking agent, peroxide system crosslinking agent and Urea Series crosslinking Agent, metal alkoxide system crosslinking agent, metallo-chelate system crosslinking agent, metal salt system crosslinking agent, carbon imidodicarbonic diamide system crosslinking agent, oxazoles Quinoline system crosslinking agent, aziridine system crosslinking agent, amine system crosslinking agent etc..As crosslinking agent, preferred isocyanate system crosslinking agent or epoxy It is crosslinking agent.In addition, above-mentioned crosslinking agent can be used alone or two or more combines and used.

It should be noted that in the present invention, can also lead to instead of using crosslinking agent or while using crosslinking agent Cross the irradiation such as electron beam or ultraviolet and implement crosslinking Treatment.

In bond layer 4, other additives can be mated properly into as needed.As other additives, such as except Outside filler (filler), fire retardant, silane coupler, ion capturing agent, extender, antiaging agent, anti-oxidant can be included Agent, surfactant etc..

Can be any, preferred inorganic filler of inorganic filler, organic filler as filler.Pass through nothing The cooperation of the fillers such as machine filler, bond layer 4 can seek the raising of heat conductivity, regulation of modulus of elasticity etc..As Inorganic filler, it can include for example by silica, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, beryllium oxide, carbonization The metals such as the ceramic-likes such as silicon, silicon nitride, aluminium nitride, aluminium, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, solder or alloy type, with And various inorganic powders of the composition such as carbon etc..Filler may be used singly or in combination of two or more kinds and use.As filler, Wherein, preferably silica or aluminum oxide, as silica, particularly preferred fused silica.It is it should be noted that inorganic The average grain diameter of filler is preferably in the range of 0.001 μm~80 μm.The average grain diameter of inorganic filler can for example utilize Laser diffraction type particle size distribution device is measured.

The use level of filler (particularly inorganic filler) is preferably below 98 weight % relative to organic resin constituent (0 weight %~98 weight %), particularly in the case of silica, the weight % of preferably 0 weight %~70 or is led at heat transfer In the case of the functional inorganic filler such as electricity, the weight % of preferably 10 weight %~98.

In addition, as fire retardant, can include for example：Antimony trioxide, antimony pentaoxide, brominated epoxy resin etc..Fire retardant It may be used singly or in combination of two or more kinds.As silane coupler, can include for example：β-(3,4- expoxycyclohexyls) second Base trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxypropyl diethoxy silicon Alkane etc..Silane coupler may be used singly or in combination of two or more kinds and use.As ion capturing agent, such as water can be included Talcs, bismuth hydroxide etc..Ion capturing agent may be used singly or in combination of two or more kinds.

From the viewpoint of cementability and reliability, bond layer 4 particularly preferably solidifies containing (A) epoxy resin, (B) The inorganic filling material that agent, (C) acrylic resin or phenoxy resin and (D) are surface-treated.

By using (A) epoxy resin, high cementability, water resistance, heat resistance can obtain., can be with as epoxy resin Use above-mentioned known epoxy resin.(B) curing agent can use above-mentioned known curing agent.

(C) acrylic resin has both flexible and intensity and is high tenacity.Preferable acrylic resin is Tg (glass transitions Temperature) it is -50 DEG C~50 DEG C, will has epoxy radicals, glycidyl, alcoholic extract hydroxyl group, phenolic hydroxyl group or carboxyl as bridging property function (methyl) acrylic copolymer containing cross-linking functional group obtained from the monomer of group is polymerize.And then contain acrylonitrile Deng and when representing rubber property, can obtain more high tenacity.

In addition, for (C) phenoxy resin, phenoxy resin is due to molecular chain length and structure is similar with epoxy resin, in height Worked in the composition of crosslink density as flexible material, assign high tenacity, therefore, can obtain the group of high intensity and toughness Compound.Preferable phenoxy resin is the material that main framing is bisphenol A-type, in addition, enumerating bisphenol-f type benzene as preferable material Epoxide resin, bisphenol-A/commercially available phenoxy resin such as F mixed types phenoxy resin or bromination phenoxy resin.

As (D) surface treated inorganic filling material, can include be surface-treated with coupling agent it is inorganic Filler.As inorganic filling material, above-mentioned known inorganic filler, for example, silica, aluminum oxide can be used. It is surface-treated by using coupling agent, the dispersiveness of inorganic filler becomes good.Therefore, it can obtain excellent viscous of mobility Oxidant layer is connect, it is thus possible to improve the bonding force with metal level 3.Furthermore it is possible to make the high filling of inorganic filler, therefore, can drop Low water absorption simultaneously improves moisture-proof.

Such as the surface treatment of the inorganic filling material of silane coupler progress is carried out by the following method：Using known Method, inorganic filling material is scattered in silane coupler solution, thus, make the hydroxyl on surface for being present in inorganic filler The silanol group reaction hydrolyzed with hydrolyzable groups such as the alkoxies of silane coupler, in the Surface Creation of inorganic filler Si-O-Si keys.

The thickness of bond layer 4 is not particularly limited, generally from the aspect of the viewpoint of applicability and heat generation, preferably 3 μ More than m, more preferably more than 5 μm, in order to contribute to the slimming of semiconductor packages, preferably less than 150 μm, more preferably 100 μm with Under.Bond layer 4 can be made up of individual layer, can also be made up of multilayer.

In addition, for bond layer 4, the stripping in B-stage (its uncured state or semi-cured state) with metal level 3 Power (23 DEG C, peel angle 180 degree, linear speed 300mm/ minutes) is preferably more than 0.3N.When peeling force is less than 0.3N, it is possible to During singualtion (cutting), it can be peeling between bond layer 4 and metal level 3.

The water absorption rate of bond layer 4 is preferably below 1.5vol%.The assay method of water absorption rate is as described below.That is, by 50 The bond layer 4 (film-like adhesive) of × 50mm size is set to sample, sample is dried 3 in 120 DEG C in vacuum drier Hour, in drier after natural cooling, dry mass is determined, is set to M1.It is small that sample in distilled water is soaked 24 at room temperature When after take out, with filter paper wipe samples surface, promptly weigh, be set to M2.Water absorption rate is calculated using following formula (1).

Water absorption rate (vol%)=[(M2-M1)/(M1/d)] × 100 (1)

Here, d is the density of film.

When water absorption rate is more than 1.5vol%, it is possible to produce encapsulation crack when solder flows back because of the moisture of water suction.

The saturation hydroscopicity of bond layer 4 is preferably below 1.0vol%.The assay method of saturation hydroscopicity is as follows.That is, Diameter 100mm circular bond layer 4 (film-like adhesive) is set to sample, makes sample in vacuum drier in 120 DEG C Dry 3 hours, in drier after natural cooling, determine dry mass, be set to M1.By sample in 85 DEG C, 85%RH constant temperature Moisture absorption is taken out after 168 hours in constant humidity groove, is promptly weighed, and is set to M2.Saturation hydroscopicity is calculated using following formula (2).

Saturation hydroscopicity (vol%)=[(M2-M1)/(M1/d)] × 100 (2)

Here, d is the density of film.

When saturation hydroscopicity is more than 1.0vol%, it is possible to because backflow when moisture absorption and vapour pressure value rise, can not obtain good Good reflux characteristic.

The remaining volatile matter of bond layer 4 is preferably below 3.0wt%.The assay method of remaining volatile ingredient is as follows.That is, The bond layer 4 (film-like adhesive) of 50 × 50mm size is set to sample, the quality at the initial stage of determination sample, is set to M1, By sample in hot air circulation thermostat in 200 DEG C heating 2 hours after, weigh, be set to M2.Remaining is calculated using following formula (3) to wave Hair point.

Remaining volatile matter (wt%)=[(M2-M1)/M1] × 100 (3)

When remaining volatile matter is more than 3.0wt%, it is possible to because encapsulation when heating and solvent volatilize, in the inside of bond layer 4 Space is produced, produces encapsulation crack.

Relative to the ratio between linear expansion coefficient of bond layer 4, (line of metal level 3 expands system to the linear expansion coefficient of metal level 3 The linear expansion coefficient of number/bond layer 4) it is preferably more than 0.2.When this is than less than 0.2, it is possible in metal level 3 and bonding agent Easily it is peeling between layer 4, encapsulation crack is produced in encapsulation, reliability reduces.

Below, the manufacture method of the band used for sealing electronic device 1 of present embodiment is illustrated.First, banding is prepared Metal level 3.As metal level 3, as long as using commercially available metal foil.Then, as shown in Fig. 5 (A), in the base of banding On the adhesive surface of material band 2 metal level 3 is bonded using doubling roller r etc..

In addition, form the membranaceous bond layer 4 of banding.For bond layer 4, resin combination can be prepared, is utilized It is formed at the customary way of membranaceous layer and is formed.Specifically, can include such as in appropriate barrier film (peeling paper) It is upper to be coated with above-mentioned resin combination and be dried (as needed to implement to heat simultaneously in the case where needing situation of heat cure etc. It is dried), method for forming bond layer 4 etc..Above-mentioned resin combination can be solution, or dispersion liquid.

Then, as shown in Fig. 5 (B), it is bonded on the metal level 3 for fit in substrate tape 2 using doubling roller r etc. from barrier film The bond layer 4 of upper stripping.

It should be noted that in above-mentioned, it has been bonded in substrate tape 2 after metal level 3, bonding is bonded on metal level 3 Oxidant layer 4, but be bonded after metal level 3 and bond layer 4, the face of the side of metal level 3 can be fitted in substrate tape 2.

Then, the use of outer rim is defined label shape (herein to be round-shaped) and clathrate as shown in Fig. 5 (C) Cutting teeth, by bond layer 4 and metal level 3 with the advance singualtion of defined size, while turn into defined with global shape The mode of label shape is precut, as shown in Fig. 5 (D), the unnecessary portion 6 on periphery is peeled off from substrate tape 2 and Remove.Here, singualtion is with the size ＜ semiconductor chips C of the plane of size=bond layer 4 of the plane as metal level 3 The mode of size of plane in the second face carry out.

It should be noted that the method as the metal level 3 and bond layer 4 that regulation shape is formed in substrate tape 2, and It is not limited to above-mentioned, the metal level 3 of banding can be both fitted in the substrate tape 2 of banding, removed not with providing shape punching After needing part 6, it is bonded on the metal level 3 of regulation shape to provide the bond layer 4 of shape formation, can also be by advance The metal level 3 and bond layer 4 formed respectively with regulation shape fits in substrate tape 2.Particularly as shown in figure 9, being set to metal In the case of the size of the plane of the size ＜ bond layers 4 of the plane of layer 3, manufacture by this method.But from manufacture From the aspect of the simplicity of the step of process, manufactured preferably by the process shown in above-mentioned Fig. 5 (A)~(D).In addition, In the process shown in (A)~(D) in above-mentioned Fig. 5, if bond layer 4 and metal level 3 is single in advance with defined size Piece, then it can obtain the bond layer 4 and metal level 3 of the size of the plane of size=bond layer 4 of the plane of metal level 3 Laminated body, only aligned and carried at the back side of the electronic device of the laminated body, can be at the back side of electronic device simultaneously Bond layer 4 and metal level 3 are carried, therefore, the letter the carrying process to electronic device of bond layer and metal level the step of Just the aspect of property is also excellent.In addition, metal level 3 need not be aligned and be equipped on bond layer 4, therefore, will not be in gold Belong to and deviation is produced on the loading position of layer 3, so, carrying property is also excellent.

In addition, separately make adhesive tape 5.Base material film can be filmed by existing known film-forming method.It is used as this Film-forming method, such as calender film method, casting in organic solvent, the blown extrusion method in closed system, T-shaped can be illustrated Mould extrusion, co-extrusion platen press, dried layer platen press etc..Then, on base material film 51 coating adhesive layer composition and make its dry (root According to needing to make its heat cross-linking) and form adhesive phase 52.As coating method, roller coat, silk screen coating, intaglio plate painting can be included Apply.It should be noted that adhesive phase composition can be directly coated to base material film 51, bonding is formed on base material film 51 Oxidant layer 52, the peeling paper of lift-off processing is carried out alternatively, it is also possible to which adhesive phase composition is coated on surface and has been formed viscous After mixture layer 52, the adhesive phase is set to be needed on base material film 51.Thus, it is produced on base material film 51 formed with adhesive phase 52 Adhesive tape 5.

Thereafter, as shown in Fig. 6 (A), the metal level 3 of the regulation shape on substrate tape 2 is arranged at and bond layer 4 On the face of the side of bond layer 4 in a manner of the face of the side of adhesive phase 52 of adhesive tape 5 connects laminate adhesive band 5.

Then, as shown in Fig. 6 (B), adhesive tape 5 is precut with regulation shape using cutter etc., such as Fig. 6 (C) shown in, by the way that the unnecessary portion 7 on periphery is peeled off to remove from substrate tape 2, band 1 used for sealing electronic device is made.Need Illustrate, thereafter, the substrate tape 2 for precut processing can be peeled off, by known barrier film and the adhesive phase of adhesive tape 5 52 fittings.

＜ application methods ＞

Then, the method for electron device package 8 being manufactured to the band used for sealing electronic device 1 using present embodiment, on one side reference Fig. 7~Fig. 8, while illustrating.

[installation procedure of semiconductor wafer W]

First, the adhesive tape D different from the band used for sealing electronic device 1 of the present invention is prepared, the central portion on adhesive tape D is such as Semiconductor wafer W is pasted shown in Fig. 7 (A), its bonding is kept and fixes (installation procedure of semiconductor wafer W), meanwhile, Adhesive tape D peripheral part fitting ring framework R.Now, adhesive tape D is pasted on the back side of semiconductor wafer W.Semiconductor wafer W The back side refers to the face (also referred to as non-electrical road surface, non-electrode forming face etc.) of side opposite with circuit face.Method of attaching does not limit especially It is fixed, preferably by the method for heating crimping.For crimping, generally while being extruded using pressurizing units such as crimping rollers while entering OK.

[cutting action of semiconductor wafer W]

Then, as shown in Fig. 7 (B), the cutting of semiconductor wafer W is carried out.Thus, semiconductor wafer W is cut into defined chi Very little and singualtion (panelization), manufacture semiconductor chip C.Cutting is for example from the circuit surface side of semiconductor wafer W according to conventional side Method is carried out.In addition, in this process, such as it can use and will be cut into adhesive tape D and be referred to as cut-out mode for being cut entirely etc..As The cutter device used in this process, is not particularly limited, and can use existing known cutter device.It should be noted that In the case of the expansion for carrying out adhesive tape D, the expansion can use existing known expansion gear and carry out.

[semiconductor chip C's picks up process]

As shown in Fig. 7 (C), picking up for semiconductor chip C is carried out, semiconductor chip C is peeled off from adhesive tape D.As picking up Method, be not particularly limited, existing known various methods can be used.For example, semiconductor chip C and ring frame will be fitted with Frame R adhesive tape D makes base material film side on the lower platform S for being placed in picks up device, in being fixed with and making in the state of ring framework R The jack-up part T of hollow round column shape rises, and adhesive tape D is expanded.In this condition, can include each semiconductor chip C Jacked up from adhesive tape D base material film side using pin N, by the semiconductor chip C jacked up methods picked up using picks up device etc..

[flip-chip connection process]

Shown in the semiconductor chip C such as Fig. 7 picked up (D), made using flip-chip welding manner (flip-chip mounting means) It is fixed on the adherend such as substrate 9.Specifically, semiconductor chip C is made with semiconductor chip C circuit face (also referred to as table Face, circuit pattern forming face, electrode forming surface etc.) form opposed with adherend 9 be conventionally fixed on and be attached Body 9.For example, first, solder flux is set to be attached to the projection 10 as the connecting portion formed in semiconductor chip C circuit surface side.Connect , while making semiconductor chip C projection 10 and being attached to the conductive material 11 of the engagement of the connection pad of adherend 9 (solder etc.), which contacts, simultaneously to be extruded, while melt projection 10 and conductive material 11, it may thereby be ensured that semiconductor chip C and being glued Attached body 9 conducts, and semiconductor chip C is fixed on adherend 9 (flip-chip welding sequence).Now, in semiconductor core Formed with space between piece C and adherend 9, between its space in general distance is 30 μm~300 μm or so.Remain in and partly lead The solder flux of the opposed faces or gap of body chip C and adherend 9 carries out cleaning removing.

Then, as shown in figure 8, the substrate tape 2 of the band used for sealing electronic device 1 of present embodiment is peeled off, gold is made The adhesive phase of category layer 3 and adhesive tape 5 exposes, and the peripheral part of adhesive phase is fixed on into ring framework R.Cut moreover, picking up Good metal level 3 and bond layer 4, makes its stripping from adhesive tape 5.Picking up can pick up with above-mentioned semiconductor chip C Carried out in the same process of process.

Then, the side of bond layer 4 of the metal level 3 being lifted and bond layer 4 is fitted in and has carried out flip-chip company The semiconductor chip C connect the back side.Thereafter, encapsulant (sealing resin etc.) is made to be filled in the semiconductor chip C with metal level 3 Periphery and the gap of semiconductor chip C and adherend 9 and sealed.Sealing is conventionally carried out.Now, into For the chi of the plane in the size ＜ semiconductor chips C of the plane of size=bond layer 4 of the plane of metal level 3 the second face Very little, bond layer 4 will not protrude from semiconductor chip C outer rim in in-plane, and metal level 3 also will not be from bond layer 4 Outer rim protrudes in in-plane, therefore, when electron device package is sealed, will not utilize the pressure of the resin of sealing Bond layer 4 or metal level 3 are peeled off from the outer edge of electronic device.Therefore, because of semiconductor core in flip-chip welding sequence Piece C and the coefficient of thermal expansion of adherend 9 difference and caused warpage using the coefficient of thermal expansion of semiconductor chip C and metal level 3 difference and Effectively offset.In addition, heat release when being used as electronic device is effectively generated heat using metal level 3.

In addition, in present embodiment, using by the used for sealing electronic device of 4 advance well cutting of metal level 3 and bond layer Band 1, but can be by the laminated body of uncut metal level 3 and bond layer 4 with the plane in the second face than semiconductor chip The mode that size diminishes is picked up after cutting, and fits in the back side for the semiconductor chip C for having carried out flip-chip connection.In addition, Can be with the flat of the size ＜ semiconductor chips C of the plane of the size ＜ bond layers 4 of the plane as metal level 3 the second face Metal level 3 and bond layer 4 is respectively cut in the mode of the size in face, is fitted in respectively with the order of bond layer 4, metal level 3 The semiconductor chip C of the flip-chip connection back side is carried out.

In addition, in present embodiment, adhesive phase 52, bond layer 4, metal level 3 are set gradually, but can also set successively Put adhesive phase 52, metal level 3, bond layer 4.

In addition, in present embodiment, the bond layer in substrate tape 2 provided with multiple profiles for circular tag shape is used 4 and the band used for sealing electronic device 1 of metal level 3, but can also use in the monolithic of width and bond layer 4 and metal level 3 It is wide with identical on the barrier film of width (bond layer 4 and metal level 3 are fitted in width during electronic device) identical banding The bond layer of banding and metal level successively lamination are wound into a roll the band used for sealing electronic device of shaft-like by degree.Barrier film can make With known barrier film, bond layer and metal level can use with above-mentioned bond layer and metal level identical bond layer and Metal level.In the case of using this band used for sealing electronic device, bond layer and metal level are cut into and fit in electronics device The length of part, the monolithic of cut-off bond layer and metal level is peeled off from barrier film, the bond layer side of the monolithic is pasted Together in electronic device.In this case, the size of the plane as size=bond layer of the plane of metal level, but with as viscous The mode for connecing the size of the plane in the second face of the size ＜ electronic devices of oxidant layer and the plane of metal level designs.

(width during electronic device is fitted in alternatively, it is also possible to prepare the width of width and the monolithic of bond layer 4 respectively Degree) shaft-like is wound into a roll with the identical width successively bond layer of lamination banding and barrier film on identical and barrier film in banding Splicing tape and width it is identical with the width (being equipped on width during electronic device) of the monolithic of metal level 3 and by the gold of banding Category layer is wound into a roll the reel metal level of shaft-like.Barrier film can use known barrier film, and bond layer and metal level can make With with above-mentioned bond layer and metal level identical bond layer and metal level.Using this splicing tape and reel metal In the case of layer, first, a barrier film of splicing tape is peeled off, bond layer is cut into the length for fitting in electronic device, will be by The monolithic of the bond layer of cut-out is peeled off from another barrier film and fits in electronic device.Then, reel metal level is cut Into the length for being equipped on electronic device, the monolithic of cut-off metal level is fitted in into electronic device via bond layer and taken Carry.In this case, the second face with the size ＜ electronic devices of the plane of size≤bond layer of the plane as metal level The mode of size of plane be designed.

＜ embodiments ＞

Below, for effect further clearly of the invention, embodiment and comparative example are described in detail, but the present invention is simultaneously It is not limited to these embodiments.

(1) making of adhesive tape

＜ adhesive phases composition (1) ＞

As the acrylic acid series copolymer (A1) with functional group, prepare comprising 2-EHA, acrylic acid 2- hydroxyl second The ratio of ester and methacrylic acid and 2-EHA is 60 moles of %, copolymers of matter average molecular weight 700,000.Connect , by iodine number turn into 20 in a manner of add methacrylic acid 2- isocyanato ethyls, prepare -50 DEG C of glass transition temperature, Hydroxyl value 10mgKOH/g, acid number 5mgKOH/g acrylic acid series copolymer (a1).

Make to add the U ロ ネ ー ト L as PIC relative to the mass parts of aforesaid propylene acid based copolymer (a1) 100 (trade name, TOSOH Co., Ltd's system) 5 mass parts, addition have as Photoepolymerizationinitiater initiater Esacure KIP150 (trade name, Lamberti societies system) mixtures of 3 mass parts is dissolved in ethyl acetate and is stirred, prepare adhesive phase composition (1).

Following film is made as base material film.

＜ base material films (1) ＞

The resin bead of ethylene-methacrylic acid copolymer is melted at 200 DEG C, 100 μm of thickness, ring are configured to using extruder Rigidity 7mN banding is membranaceous, makes base material film (1).Ethylene-methacrylic acid copolymer uses the dimerization strain formula meeting of three well Du Ponts The Nucrel NO35C (trade name) of society.

＜ adhesive tapes (1) ＞

Turn into 10 μm in the release liner comprising polyethylene-terephthalate's ester film through demoulding processing with dried thickness Mode apply above-mentioned adhesive phase composition (1), dried 3 minutes at 110 DEG C and after being set to adhesive phase, with above-mentioned base Material film (1) is bonded, and makes adhesive tape (1).

(2) making of bond layer

＜ bond layers (1) ＞

Make acrylic resin (Nagase ChemteX Co. Ltd. systems, trade name " テ イ サ Application レ ジ Application SG-P3 ", Mw85 ten thousand, Tg12 DEG C) 80 mass parts, naphthalene type epoxy resin (Dainippon Ink Chemicals's system, trade name " HP-4700 ") 10 mass parts and conduct are admittedly Phenolic resin (bright and chemical conversion Co. Ltd. system, trade name " MEH7851 ") 10 mass parts of agent are dissolved in MEK, prepare viscous Connect oxidant layer composition solution.It is 50 μm that the bond layer composition solution, which is coated on by the thickness for having carried out silicone demoulding processing, Polyethylene terephthalate film form demoulding process film (release liner) on after, at 130 DEG C dry 5 minutes. Thus, the bond layer (1) of 10 μm of thickness is made.

(3) preparation of metal level

＜ metal levels (1) ＞

GTS-MP (trade name, The Furakawa Electric Co., Ltd.'s system, copper foil, 35 μm of thickness)

(4) making of substrate tape

Following substrate tape is made as substrate tape.

(resin film d-1)

Will be with 40：Match ratio shown in 60 is mixed with styrene-hydrogenated isoprene-styrene block copolymer (SEPS) (strain Kuraray society of formula commercial firm system, trade name " SEPTON KF-2104 ") and homo-polypropylene (PP) (Ube Industries, Ltd's system, business The name of an article " J-105G ") resin bead melted at 200 DEG C, it is membranaceous to be configured to the banding of 90 μm of thickness using extruder, thus makes Make resin film d-1.

(substrate tape adhesive phase composition e-1)

As the acrylic acid series copolymer (A2) with functional group, prepare comprising 2-EHA, acrylic acid 2- hydroxyl second The ratio of ester and methacrylic acid and 2-EHA is 70 moles of %, matter average molecular weight 500,000, glass transition temperatures - 50 DEG C of degree, hydroxyl value 30gKOH/g, acid number 5mgKOH/g acrylic acid series copolymer (a2).Relative to acrylic acid series copolymer (a2) 100 mass parts, and addition PIC based compound (trade name " U ロ ネ ー ト L ", TOSOH Co., Ltd's system) 8 mass Part, it is dissolved in ethyl acetate and is stirred, obtains substrate tape adhesive phase composition e-1.

＜ substrate tape (1) ＞

By the substrate tape of preparation with adhesive phase composition e-1 by dried thickness turn into 10 μm in a manner of be coated on by The release liner that polyethylene-terephthalate's ester film of demoulding processing is formed has been carried out, it is and upper after being dried 3 minutes at 110 DEG C Resin film d-1 fittings are stated, are produced on the substrate tape (1) formed with substrate tape adhesive phase on resin film.

(5) making of electron device package

The ＞ of ＜ embodiments 1

By bond layer (1) side of the metal level obtained as above (1) and bond layer (1) with barrier film in fitting angle 120 °, pressure 0.2MPa, be bonded under conditions of speed 10mm/s after, on the metal layer by substrate tape (1) in fitting angle 120 °, pressure 0.2MPa, be bonded under conditions of speed 10mm/s.Bond layer (1) and metal level (1) are precut, with Make to cut into the circular tag shape and 9.4 × 9.4mm square less than adhesive tape (1).Barrier film is peeled off from bond layer, The bond layer side exposed and upper is bonded around metal level and bond layer in a manner of adhesive phase connects with substrate tape (1) State the adhesive phase of adhesive tape (1).Then, by adhesive tape in a manner of turning into concentric circles with metal level and bond layer pre-cut Be cut into it is round-shaped, by the unnecessary portion on periphery from substrate tape (1) peel off remove, make band used for sealing electronic device.

Chip grafting material (The Furakawa Electric Co., Ltd.'s system, trade name are used on 20mm × 20mm substrate " AF3836 "), the chip of 10mm square is bonded in a manner of turning into 100 μm with the difference of height of substrate, 100 is made and is carrying out The sample selected in the chip of flip-chip connection.

(the carrying process of bond layer and metal level to chip)

Air-cooled type high-pressure sodium lamp (80W/cm, irradiation are utilized to adhesive phase from the base material film side of above-mentioned band used for sealing electronic device Distance 10cm) irradiation ultraviolet 200mJ/cm².To the bond layer used for sealing electronic device with central portion and the monolithic of metal level 100, sample is picked up, and bond layer and metal level are carried in said chip.Thereafter, with encapsulant (KYOCERA's chemistry strain Formula commercial firm system, trade name " KE-G3000D ") moulded, make the electron device package sample of embodiment 1.

The ＞ of ＜ embodiments 2

By adhesive phase (1) side of the metal level obtained as above (1) and substrate tape (1) in 120 ° of angle of fitting, pressure After being bonded under conditions of 0.2MPa, speed 10mm/s, by gold in a manner of reaching substrate tape (1) from the surface of metal level (1) Category layer (1) is precut, so as to cut into the circular tag shape and 9mm × 8.4mm less than adhesive tape (1).It will cut Metal level (1) side of metal level (1) of good band substrate tape (1) and the adhesive phase of adhesive tape (1) are in 120 ° of angle of fitting, pressure After being bonded under conditions of power 0.2MPa, speed 10mm/s, by adhesive tape in a manner of reaching barrier film from the surface of base material film (1) (1) be precut into round-shaped, so as to turn into concentric circles with metal level (1), the unnecessary portion on periphery is shelled from barrier film From and remove, make the adhesive tape with metal level.

In addition, the bond layer (1) of the bond layer (1) with barrier film is precut, so as to cut into less than bonding The circular tag shape and 9mm × 9.4mm of band (1).Moreover, the bonding agent by the bond layer (1) with barrier film of well cutting The adhesive phase of layer (1) side and adhesive tape (1) is bonded under conditions of 120 ° of angle of fitting, pressure 0.2MPa, speed 10mm/s Afterwards, adhesive tape (1) is precut into a manner of reaching barrier film from the surface of base material film (1) it is round-shaped so that with it is bonding Oxidant layer (1) turns into concentric circles, and the unnecessary portion on periphery is peeled off from barrier film and removed, and makes the bonding with bond layer Band.

In addition, make 100 samples selected in the chip for having carried out flip-chip connection same as Example 1.

(the carrying process of bond layer and metal level to chip)

Air-cooled type high-pressure sodium lamp (80W/cm, photograph are utilized to adhesive phase from the base material film side of the above-mentioned adhesive tape with bond layer Penetrate distance 10cm) irradiation ultraviolet 200mJ/cm².To the monolithic sample of the bond layer of the adhesive tape central portion with bond layer 100 are picked up, and bond layer is carried in said chip.Thereafter, from the base material film side of the above-mentioned adhesive tape with metal level Air-cooled type high-pressure sodium lamp (80W/cm, irradiation distance 10cm) irradiation ultraviolet 200mJ/cm is utilized to adhesive phase².To band metal The monolithic sample 100 of the metal level of the adhesive tape central portion of layer is picked up, and is carried on the bond layer in said chip Metal level.Thereafter, moulded with encapsulant (Kyocera Chem Corp.'s system, trade name " KE-G3000D "), make and implement The electron device package of example 2.

The ＞ of ＜ embodiments 3

The size of chip is set to 4mm × 20mm, the size of bond layer is set to 4mm × 18mm, the size of metal level is set to 3.6mm × 18mm, in addition, operate similarly to Example 2, make the electron device package of embodiment 3.

The ＞ of ＜ comparative examples 1

The size of chip is set to 10mm × 10mm, the size of bond layer is set to 10.4mm × 10.4mm, by metal level Size is set to 10.4mm × 10.4mm, in addition, operates similarly to Example 1, the electronic device envelope of comparison example 1 Dress.

The ＞ of ＜ comparative examples 2

The size of chip is set to 10mm × 10mm, the size of bond layer is set to 9.4mm × 9.4mm, by the chi of metal level It is very little to be set to 10.4mm × 10.4mm, in addition, operate similarly to Example 2, the electron device package of comparison example 2.

The ＞ of ＜ comparative examples 3

The size of chip is set to 10mm × 10mm, the size of bond layer is set to 10.4mm × 10.4mm, by metal level Size is set to 9.4mm × 9.4mm, in addition, operates similarly to Example 2, the electron device package of comparison example 3.

Following evaluation is carried out to embodiment 1~3 and the electron device package of comparative example 1~3.

(workability)

When making the electron device package of each embodiment and comparative example, the carrying to the bond layer and metal level of said chip Process, from following viewpoint evaluating operation.First, the simplicity on step, situation about can be carried in 1 process is commented Valency is 1 point, and the material in carrying more than 2 processes is evaluated as into 0 point.It the results are shown in table 1.In addition, on carrying property, use up The loading position to chip of micro- sem observation bond layer and metal level is learned, determines the deviation at the carrying from target, will Deviate the situation for being 0% for more than 0.2mm sample number and be evaluated as 2 points, the situation more than 0% and less than 10% is evaluated as 1 point, more than 10% situation is evaluated as 0 point.It the results are shown in table 1.Moreover, point by the simplicity of step and carrying property Several 3 articles of adding up to are evaluated as zero in workability as excellent product, and △ is evaluated as using 1 or 2 article as permission product, Be evaluated as using 0 article as defective products ×.It the results are shown in table 2.

[table 1]

	Embodiment 1	Embodiment 2	Embodiment 3	Comparative example 1	Comparative example 2	Comparative example 3
							The simplicity of step	1	0	0	1	0	0
Carrying property	2	1	1	1	1	0
							It is total	3	1	1	2	1	0

The presence or absence of (peel off)

The electron device package of each embodiment and comparative example is cut off, with observation by light microscope section.Will by chip without The article that method confirms the stripping of bond layer or metal level or floated is evaluated as zero as excellent product, will confirm to be bonded by chip The stripping of oxidant layer or the article floated are evaluated as × 1 as defective products, by the stripping that confirms metal level by chip or float Article is evaluated as defective products × by 2.The results are shown in table 2.

[table 2]

Embodiment 1

Embodiment 2

Embodiment 3

Comparative example 1

Comparative example 2

Comparative example 3

The presence or absence of peel off

○

○

○

×1

×2

×1

Workability

○

△

△

△

△

×

As shown in table 2, due to embodiment 1~3 electron device package for metal level plane size≤bond layer Plane size ＜ electronic devices the second face plane size, therefore, do not produce between chip and bond layer and viscous Connect the stripping between oxidant layer and metal level.Further, since the second face for the size ＜ electronic devices of the plane of bond layer The size of plane, therefore, turn into carrying to chip also good result.And then due to the electron device package of embodiment 1 For the size of the plane of size=bond layer of the plane of metal level, therefore, the carrying turned into chip is especially excellent, right The simplification of the carrying step of chip also excellent result.

On the other hand, due to comparative example 1,3 electron device package for bond layer plane size ＞ electronic devices The second face plane size, therefore, be peeling between chip and bond layer.Due to the electronic device of comparative example 2 The size of the plane of the size ＞ bond layers of the plane of metal level is encapsulated as, therefore, is produced between bond layer and metal level It is raw to peel off.

Symbol description

1：Band used for sealing electronic device

2：Substrate tape

3：Metal level

4：Bond layer

5：Adhesive tape

5a：Label portion

5b：Periphery

Claims (6)

1. a kind of electron device package, it has：

Substrate,

Be connected in a manner of the first face is opposed with the substrate substrate electronic device,

Be arranged at the second face of the electronic device of side opposite with first face bond layer and

The metal level in second face for being adhered to the electronic device via the bond layer,

Second face of electronic device described in the size ＜ of the plane of the size of the plane of the metal level≤bond layer The size of plane.

2. electron device package according to claim 1, it is characterised in that

The metal level contains copper or aluminium.

3. a kind of manufacture method of electron device package, it has following process：

Electronic device is connected to the process of the substrate in a manner of the first face is opposed with the substrate；And

Via bond layer by metal bonding layer in the work in the second face of the electronic device of side opposite with first face Sequence,

Second face of electronic device described in the size ＜ of the plane of the size of the plane of the metal level≤bond layer The size of plane.

4. the manufacture method of electron device package according to claim 3, it is characterised in that

The metal level contains copper or aluminium.

5. a kind of band used for sealing electronic device, it is characterised in that it has：

Adhesive tape with base material film and adhesive phase and

The laminated body of bond layer and metal level,

The bond layer lamination is arranged at the side opposite with the base material film of described adhesive layer,

The metal level is adhered to the second face of the side opposite with the first face of electronic device, the electronics via the bond layer Device is connected to the substrate in a manner of the first face is opposed with substrate,

With of electronic device described in the size ＜ of the plane of the size of the plane as the metal level≤bond layer The mode of the size of the plane in two faces, the bond layer and the metal level are initially switched off simultaneously singualtion in advance.

6. band used for sealing electronic device according to claim 5, it is characterised in that

The metal level contains copper or aluminium.