JP5157701B2 - 表面処理方法 - Google Patents
表面処理方法 Download PDFInfo
- Publication number
- JP5157701B2 JP5157701B2 JP2008183200A JP2008183200A JP5157701B2 JP 5157701 B2 JP5157701 B2 JP 5157701B2 JP 2008183200 A JP2008183200 A JP 2008183200A JP 2008183200 A JP2008183200 A JP 2008183200A JP 5157701 B2 JP5157701 B2 JP 5157701B2
- Authority
- JP
- Japan
- Prior art keywords
- surface treatment
- substrate
- flow path
- film forming
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004381 surface treatment Methods 0.000 title claims description 139
- 238000000034 method Methods 0.000 title claims description 58
- 239000000758 substrate Substances 0.000 claims description 125
- 239000003795 chemical substances by application Substances 0.000 claims description 52
- 238000004140 cleaning Methods 0.000 claims description 42
- 230000015572 biosynthetic process Effects 0.000 claims description 41
- 230000008016 vaporization Effects 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 39
- 239000012159 carrier gas Substances 0.000 claims description 33
- 239000007789 gas Substances 0.000 claims description 23
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 12
- 230000006837 decompression Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims 3
- 239000010408 film Substances 0.000 description 164
- 239000006087 Silane Coupling Agent Substances 0.000 description 69
- 230000008569 process Effects 0.000 description 43
- 238000009834 vaporization Methods 0.000 description 37
- 238000000354 decomposition reaction Methods 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000006200 vaporizer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 125000005372 silanol group Chemical group 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- LTQBNYCMVZQRSD-UHFFFAOYSA-N (4-ethenylphenyl)-trimethoxysilane Chemical compound CO[Si](OC)(OC)C1=CC=C(C=C)C=C1 LTQBNYCMVZQRSD-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- JKQXNDFAPHZGLT-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)[Si](OC)(OC)OC.C(CCCCCCCCCCCCCCCCC)[Si](OC)(OC)OC Chemical compound C(CCCCCCCCCCCCCCCCC)[Si](OC)(OC)OC.C(CCCCCCCCCCCCCCCCC)[Si](OC)(OC)OC JKQXNDFAPHZGLT-UHFFFAOYSA-N 0.000 description 1
- -1 N-phenyl-3-aminopropyl Chemical group 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- OGIIWTRTOXDWEH-UHFFFAOYSA-N [O].[O-][O+]=O Chemical compound [O].[O-][O+]=O OGIIWTRTOXDWEH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- FZMJEGJVKFTGMU-UHFFFAOYSA-N triethoxy(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC FZMJEGJVKFTGMU-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- WSXPNWHUVXMIRX-UHFFFAOYSA-N trimethoxy-[4-(trifluoromethyl)phenyl]silane Chemical compound CO[Si](OC)(OC)C1=CC=C(C(F)(F)F)C=C1 WSXPNWHUVXMIRX-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Cleaning In General (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008183200A JP5157701B2 (ja) | 2008-07-14 | 2008-07-14 | 表面処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008183200A JP5157701B2 (ja) | 2008-07-14 | 2008-07-14 | 表面処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010020255A JP2010020255A (ja) | 2010-01-28 |
| JP2010020255A5 JP2010020255A5 (enExample) | 2011-06-02 |
| JP5157701B2 true JP5157701B2 (ja) | 2013-03-06 |
Family
ID=41705188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008183200A Expired - Fee Related JP5157701B2 (ja) | 2008-07-14 | 2008-07-14 | 表面処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5157701B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102224835B1 (ko) * | 2021-01-06 | 2021-03-08 | (주)하이비젼시스템 | 결함 검사 분야에 적용 가능한 광학 프리즘 및 이를 이용한 암시야 조명계 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010024484A (ja) * | 2008-07-17 | 2010-02-04 | Seiko Epson Corp | 表面処理装置および表面処理方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62251720A (ja) * | 1986-04-25 | 1987-11-02 | Toshiba Corp | 液晶素子の製造方法 |
| JPH04345126A (ja) * | 1991-05-22 | 1992-12-01 | Fuji Photo Film Co Ltd | 液晶表示素子 |
| JP2007025529A (ja) * | 2005-07-21 | 2007-02-01 | Seiko Epson Corp | 液晶装置及びその製造方法、並びに電子機器 |
| JP2007206535A (ja) * | 2006-02-03 | 2007-08-16 | Seiko Epson Corp | 液晶装置の製造方法、液晶装置及び電子機器 |
| JP4789704B2 (ja) * | 2006-06-07 | 2011-10-12 | シチズンファインテックミヨタ株式会社 | 液晶パネルの製造方法 |
| JP2008071938A (ja) * | 2006-09-14 | 2008-03-27 | Seiko Epson Corp | 成膜装置 |
-
2008
- 2008-07-14 JP JP2008183200A patent/JP5157701B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102224835B1 (ko) * | 2021-01-06 | 2021-03-08 | (주)하이비젼시스템 | 결함 검사 분야에 적용 가능한 광학 프리즘 및 이를 이용한 암시야 조명계 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010020255A (ja) | 2010-01-28 |
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