JP5153346B2 - カーボン・ナノチューブを酸化物の表面に選択的に配置する方法 - Google Patents

カーボン・ナノチューブを酸化物の表面に選択的に配置する方法 Download PDF

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Publication number
JP5153346B2
JP5153346B2 JP2007553111A JP2007553111A JP5153346B2 JP 5153346 B2 JP5153346 B2 JP 5153346B2 JP 2007553111 A JP2007553111 A JP 2007553111A JP 2007553111 A JP2007553111 A JP 2007553111A JP 5153346 B2 JP5153346 B2 JP 5153346B2
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self
monolayer
carbon nanotubes
substrate
metal oxide
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Japanese (ja)
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JP2008528426A5 (enExample
JP2008528426A (ja
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アフザリアルダカニ、アリ
ハノン、ジェームス、ボーラー
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International Business Machines Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/28—Processes for applying liquids or other fluent materials performed by transfer from the surfaces of elements carrying the liquid or other fluent material, e.g. brushes, pads, rollers
    • B05D1/283—Transferring monomolecular layers or solutions of molecules adapted for forming monomolecular layers from carrying elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Thin Film Transistor (AREA)
JP2007553111A 2005-01-27 2006-01-05 カーボン・ナノチューブを酸化物の表面に選択的に配置する方法 Expired - Fee Related JP5153346B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/044,885 2005-01-27
US11/044,885 US7504132B2 (en) 2005-01-27 2005-01-27 Selective placement of carbon nanotubes on oxide surfaces
PCT/US2006/000266 WO2006081040A2 (en) 2005-01-27 2006-01-05 Selective placement of carbon nanotubes on oxide surfaces

Publications (3)

Publication Number Publication Date
JP2008528426A JP2008528426A (ja) 2008-07-31
JP2008528426A5 JP2008528426A5 (enExample) 2008-12-04
JP5153346B2 true JP5153346B2 (ja) 2013-02-27

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JP2007553111A Expired - Fee Related JP5153346B2 (ja) 2005-01-27 2006-01-05 カーボン・ナノチューブを酸化物の表面に選択的に配置する方法

Country Status (6)

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US (2) US7504132B2 (enExample)
EP (1) EP1855817B1 (enExample)
JP (1) JP5153346B2 (enExample)
CN (1) CN101124050B (enExample)
TW (1) TWI390082B (enExample)
WO (1) WO2006081040A2 (enExample)

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US7833504B2 (en) * 2007-08-27 2010-11-16 The Research Foundation Of State University Of New York Silylated carbon nanotubes and methods of making same
JPWO2009093698A1 (ja) * 2008-01-24 2011-05-26 日本電気株式会社 カーボンナノチューブ分散膜の形成方法及び半導体素子の製造方法
US8598569B2 (en) 2008-04-30 2013-12-03 International Business Machines Corporation Pentacene-carbon nanotube composite, method of forming the composite, and semiconductor device including the composite
JP5532553B2 (ja) * 2008-06-11 2014-06-25 凸版印刷株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、薄膜トランジスタアレイ及び画像表示装置
US8138102B2 (en) * 2008-08-21 2012-03-20 International Business Machines Corporation Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure
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US8297449B2 (en) * 2010-01-12 2012-10-30 International Business Machines Corporation Nanoporous semi-permeable membrane and methods for fabricating the same
US8354336B2 (en) * 2010-06-22 2013-01-15 International Business Machines Corporation Forming an electrode having reduced corrosion and water decomposition on surface using an organic protective layer
US8124485B1 (en) 2011-02-23 2012-02-28 International Business Machines Corporation Molecular spacer layer for semiconductor oxide surface and high-K dielectric stack
US8821965B2 (en) * 2011-04-29 2014-09-02 International Business Machines Corporation Accurate deposition of nano-objects on a surface
TWI479547B (zh) * 2011-05-04 2015-04-01 Univ Nat Cheng Kung 薄膜電晶體之製備方法及頂閘極式薄膜電晶體
US9273004B2 (en) * 2011-09-29 2016-03-01 International Business Machines Corporation Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers
US9177688B2 (en) 2011-11-22 2015-11-03 International Business Machines Corporation Carbon nanotube-graphene hybrid transparent conductor and field effect transistor
US8772782B2 (en) 2011-11-23 2014-07-08 International Business Machines Corporation Transistor employing vertically stacked self-aligned carbon nanotubes
US8394727B1 (en) 2012-08-17 2013-03-12 International Business Machines Corporation High density selective deposition of carbon nanotubes onto a substrate
US8828762B2 (en) * 2012-10-18 2014-09-09 International Business Machines Corporation Carbon nanostructure device fabrication utilizing protect layers
TWI524825B (zh) 2012-10-29 2016-03-01 財團法人工業技術研究院 碳材導電膜的轉印方法
KR20140107968A (ko) * 2013-02-28 2014-09-05 한국전자통신연구원 그래핀 전사방법
US9193585B2 (en) 2013-06-07 2015-11-24 International Business Machines Corporation Surface modification using functional carbon nanotubes
US10583677B2 (en) 2014-11-25 2020-03-10 Massachusetts Institute Of Technology Nanoporous stamp printing of nanoparticulate inks
US10006910B2 (en) 2014-12-18 2018-06-26 Agilome, Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US9859394B2 (en) 2014-12-18 2018-01-02 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US10020300B2 (en) 2014-12-18 2018-07-10 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US9857328B2 (en) 2014-12-18 2018-01-02 Agilome, Inc. Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same
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US9955584B2 (en) 2016-04-25 2018-04-24 Winbond Electronics Corp. Stamp for printed circuit process and method of fabricating the same and printed circuit process
EP3459115A4 (en) 2016-05-16 2020-04-08 Agilome, Inc. GRAPHENE FETING DEVICES, SYSTEMS, AND METHODS OF USE THEREOF FOR NUCLEIC ACID SEQUENCING
US9691987B1 (en) * 2016-10-20 2017-06-27 International Business Machines Corporation Self-assembly of nanostructures
US11396196B2 (en) 2018-01-05 2022-07-26 Massachusetts Institute Of Technology Apparatus and methods for contact-printing using electrostatic nanoporous stamps
US10672986B2 (en) 2018-04-13 2020-06-02 International Business Machines Corporation Self-assembly of nanostructures
US11062946B2 (en) 2018-11-08 2021-07-13 International Business Machines Corporation Self-aligned contact on a semiconductor device
JP2024506165A (ja) * 2021-02-08 2024-02-09 ウィスコンシン アルムニ リサーチ ファンデイション 化学的およびトポグラフィー的にパターン化された基板を用いた整列度の高いカーボンナノチューブ膜の選択領域堆積
KR102491542B1 (ko) * 2021-06-25 2023-01-26 실리콘밸리(주) 탄소나노튜브의 입자 진동을 이용한 방열 챔버
CN113707769B (zh) * 2021-08-24 2023-10-17 福州大学 基于转移印刷绝缘朗缪尔单层的高精度图案化led漏电流阻挡层及其制备方法

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Also Published As

Publication number Publication date
EP1855817B1 (en) 2012-07-25
US7504132B2 (en) 2009-03-17
EP1855817A4 (en) 2011-03-02
JP2008528426A (ja) 2008-07-31
TW200626747A (en) 2006-08-01
TWI390082B (zh) 2013-03-21
CN101124050B (zh) 2012-09-05
US20060165896A1 (en) 2006-07-27
US20090117277A1 (en) 2009-05-07
CN101124050A (zh) 2008-02-13
WO2006081040A2 (en) 2006-08-03
US7951424B2 (en) 2011-05-31
WO2006081040A3 (en) 2007-10-11
EP1855817A2 (en) 2007-11-21

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