JP5150811B2 - III−V族GaN系化合物半導体素子 - Google Patents
III−V族GaN系化合物半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title description 9
- 238000005253 cladding Methods 0.000 claims description 45
- 239000000203 mixture Substances 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 25
- 230000007423 decrease Effects 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 12
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000005641 tunneling Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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Description
超格子構造クラッド層を含む従来のGaN系レーザダイオードを製作した。ここで、p−クラッド層は、Al0.1Ga0.9N層/GaN層を一組として、これを100回繰り返して積層した。ここで、それぞれの層は、25Åの厚さに形成された。このように製作されたレーザダイオードのI−V(current−voltage)特性およびレーザ光の半値全幅(FWHM)特性を測定した。
本発明の第1実施形態によって、GaN系レーザダイオードを製作した。ここで、p−クラッド層は、Al0.1Ga0.9N層/GaN層を一組として、これを10回繰り返して積層し、その上にAl0.09Ga0.91N層/GaN層を一組として、これを10回繰り返して積層し、同様の操作を繰り返し、最上層には、Al0.01Ga0.99N層/GaN層を一組として、これを10回繰り返して積層した。これを簡単に表現すると、Al0.1Ga0.9N層/GaN層(10回反復)+Al0.09Ga0.91N層/GaN層(10回反復)+Al0.08Ga0.92N層/GaN層(10回反復)+Al0.07Ga0.93N層/GaN層(10回反復)+......+Al0.01Ga0.99N層/GaN層(10回反復)と表すことができる。ここで、それぞれの層は、25Åの厚さに形成された。このように製作されたレーザダイオードのI−V特性およびレーザ光の半値全幅特性を測定した。
12 n−GaN下部コンタクト層、
13 n−クラッド層、
14 n−導波層、
15 活性層、
16 p−導波層、
17、18、19、20 p−クラッド層、
17a、18a、19a、20a AlxGa(1−x)N層、
17b、18b、19b GaN層、
20b AlyGa(1−y)N層、
22 p−コンタクト層、
24 p−電極、
26 n−電極。
Claims (10)
- 活性層と、
前記活性層の上下部にそれぞれ設けられた第1クラッド層および第2クラッド層と、を備え、
前記第1クラッド層および前記第2クラッド層のうち少なくとも一方は、AlxGa(1−x)N(0<x<1)層とGaN層とが交互に繰り返して積層される超格子構造を有し、前記活性層から離れるほど、前記AlxGa(1−x)N層のAl組成が所定量ずつ順次に減少し、
前記活性層から離れるほど、前記Al x Ga (1−x) N層の厚さは、順次に増大することを特徴とするIII−V族GaN系化合物半導体発光素子。 - 前記Al組成の減少量が、前記活性層に隣接した前記AlxGa(1−x)N層のAl組成の1.3%以下であることを特徴とする請求項1に記載のIII−V族GaN系化合物半導体発光素子。
- 前記活性層から離れるほど、前記AlxGa(1−x)N層のAl組成が所定量ずつ順次に減少し、前記GaN層の厚さは順次に増大することを特徴とする請求項1または2に記載のIII−V族GaN系化合物半導体発光素子。
- 前記AlxGa(1−x)N層にp型またはn型の不純物がドーピングされていることを特徴とする請求項1〜3のいずれか1項に記載のIII−V族GaN系化合物半導体発光素子。
- 前記GaN層にp型またはn型の不純物がドーピングされていることを特徴とする請求項1〜4のいずれか1項に記載のIII−V族GaN系化合物半導体発光素子。
- 活性層と、
前記活性層の上下部にそれぞれ設けられた第1クラッド層および第2クラッド層と、を備え、
前記第1クラッド層および前記第2クラッド層のうち少なくとも一方は、AlxGa(1−x)N(0<x<1)層とAlyGa(1−y)N(0<y<x<1)層とが交互に繰り返して積層される超格子構造を有し、前記活性層から離れるほど、前記AlxGa(1−x)N層および前記AlyGa(1−y)N層のAl組成がそれぞれ所定量ずつ順次に減少し、
前記活性層から離れるほど、前記Al x Ga (1−x) N層の厚さは、順次に増大することを特徴とするIII−V族GaN系化合物半導体発光素子。 - 前記AlxGa(1−x)N層および前記AlyGa(1−y)N層の前記Al組成の減少量が、それぞれ、前記活性層に隣接した前記AlxGa(1−x)N層および前記AlyGa(1−y)N層のAl組成の1.3%以下であることを特徴とする請求項6に記載のIII−V族GaN系化合物半導体発光素子。
- 前記活性層から離れるほど、前記AlxGa(1−x)N層および前記AlyGa(1−y)N層のAl組成が所定量ずつ順次に減少し、前記AlyGa(1−y)N層の厚さは、順次に増大することを特徴とする請求項6または7に記載のIII−V族GaN系化合物半導体発光素子。
- 前記AlxGa(1−x)N層にp型またはn型の不純物がドーピングされていることを特徴とする請求項6〜8のいずれか1項に記載のIII−V族GaN系化合物半導体発光素子。
- 前記AlyGa(1−y)N層にp型またはn型の不純物がドーピングされていることを特徴とする請求項6〜9のいずれか1項に記載のIII−V族GaN系化合物半導体発光素子。
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KR10-2005-0047999 | 2005-06-03 | ||
KR1020050047999A KR100718129B1 (ko) | 2005-06-03 | 2005-06-03 | Ⅲ-Ⅴ족 GaN계 화합물 반도체 소자 |
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US20070018199A1 (en) | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
US7566918B2 (en) | 2006-02-23 | 2009-07-28 | Cree, Inc. | Nitride based transistors for millimeter wave operation |
JP5709899B2 (ja) | 2010-01-05 | 2015-04-30 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオード及びその製造方法 |
US20110188528A1 (en) * | 2010-02-04 | 2011-08-04 | Ostendo Technologies, Inc. | High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters |
GB2487531A (en) * | 2011-01-20 | 2012-08-01 | Sharp Kk | Substrate system consisting of a metamorphic transition region comprising a laminate of AlxGa1-x N and the same material as the substrate. |
GB201107674D0 (en) * | 2011-05-09 | 2011-06-22 | Univ Surrey | Semiconductor laser |
US9401452B2 (en) * | 2012-09-14 | 2016-07-26 | Palo Alto Research Center Incorporated | P-side layers for short wavelength light emitters |
KR101502780B1 (ko) * | 2013-04-08 | 2015-03-18 | 한국산업기술대학교산학협력단 | 고효율 발광 다이오드 에피구조 |
CN103236477B (zh) * | 2013-04-19 | 2015-08-12 | 安徽三安光电有限公司 | 一种led外延结构及其制备方法 |
FR3028670B1 (fr) * | 2014-11-18 | 2017-12-22 | Commissariat Energie Atomique | Structure semi-conductrice a couche de semi-conducteur du groupe iii-v ou ii-vi comprenant une structure cristalline a mailles cubiques ou hexagonales |
TWI568016B (zh) * | 2014-12-23 | 2017-01-21 | 錼創科技股份有限公司 | 半導體發光元件 |
CN105048286A (zh) * | 2015-09-11 | 2015-11-11 | 厦门市三安光电科技有限公司 | 氮化镓基激光二极管及其制备方法 |
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JPH0632339B2 (ja) * | 1984-12-18 | 1994-04-27 | キヤノン株式会社 | 半導体レ−ザ |
US4882734A (en) * | 1988-03-09 | 1989-11-21 | Xerox Corporation | Quantum well heterostructure lasers with low current density threshold and higher TO values |
JP3245937B2 (ja) * | 1992-03-25 | 2002-01-15 | ソニー株式会社 | 半導体発光素子 |
GB2298735A (en) * | 1995-03-08 | 1996-09-11 | Sharp Kk | Semiconductor device having a miniband |
US5670798A (en) * | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
JPH10145004A (ja) * | 1996-11-06 | 1998-05-29 | Toyoda Gosei Co Ltd | GaN系発光素子 |
CA2529996C (en) * | 1997-01-09 | 2014-08-26 | Nichia Corporation | Nitride semiconductor device |
JPH1168158A (ja) * | 1997-08-20 | 1999-03-09 | Sanyo Electric Co Ltd | 窒化ガリウム系化合物半導体装置 |
JP2000244070A (ja) * | 1999-02-19 | 2000-09-08 | Sony Corp | 半導体装置および半導体発光素子 |
KR100425341B1 (ko) * | 2000-02-08 | 2004-03-31 | 삼성전기주식회사 | 질화물 반도체 발광 소자 |
JP2002057410A (ja) * | 2000-05-29 | 2002-02-22 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP2002314204A (ja) * | 2001-04-16 | 2002-10-25 | Ricoh Co Ltd | p型超格子構造とその作製方法、III族窒化物半導体素子及びIII族窒化物半導体発光素子 |
US7015515B2 (en) * | 2001-06-08 | 2006-03-21 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device having a superlattice structure |
JP2003289176A (ja) * | 2002-01-24 | 2003-10-10 | Sony Corp | 半導体発光素子およびその製造方法 |
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