JP5149483B2 - 発光素子装置とその製造方法 - Google Patents
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- JP5149483B2 JP5149483B2 JP2005092526A JP2005092526A JP5149483B2 JP 5149483 B2 JP5149483 B2 JP 5149483B2 JP 2005092526 A JP2005092526 A JP 2005092526A JP 2005092526 A JP2005092526 A JP 2005092526A JP 5149483 B2 JP5149483 B2 JP 5149483B2
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
- H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Description
請求項2の発明は、請求項1に記載の発光素子装置において、前記ベース体が、銅、アルミニウム、珪素、AlNのうちのいずれかの材料を用いて形成されているものである。
2 ベース体
3 発光素子
4 導電性接合部材
5 透明絶縁層
6 導電性回路
51 ビアホール
61 ビアホール内電気接続回路
Claims (7)
- 外面に端子電極と発光面とを有する発光素子を少なくとも1個搭載し、その端子電極に電流を流すことによりその発光素子を発光させる発光素子装置において、
前記発光素子を搭載するためのベース体と、
前記ベース体上に発光面を上にして搭載した発光素子と、
前記ベース体及び当該ベース体に搭載された発光素子を覆うように形成した光学的な透明性を有する透明絶縁層と、
前記透明絶縁層上に形成され前記発光素子の端子電極の少なくとも1つに電気的に接続されパターニングされた導電性回路と、を備え、
前記ベース体は、パターニングされた導電性回路が形成されておらず、該ベース体の熱伝導率が50W/mK以上であり、
前記透明絶縁層上の導電性回路は、前記発光素子の発光面の直上の前記透明絶縁層に形成されたビアホール内に充填されてなる電気接続回路を介して前記発光素子の端子電極に接続されていることを特徴とする発光素子装置。 - 前記ベース体が、銅、アルミニウム、珪素、AlNのうちのいずれかの材料を用いて形成されていることを特徴とする請求項1に記載の発光素子装置。
- 前記発光素子は、その発光面に前記端子電極を有するとともに前記発光面を上にして前記ベース体上に搭載されていることを特徴とする請求項1又は請求項2に記載の発光素子装置。
- 前記ベース体が、導電性部材で形成されており、前記発光素子は当該ベース体上に搭載されるとともに導電性接合部材を用いて当該ベース体に電気的に接合され、当該ベース体が前記発光素子の電極端子に電流を流す導電性回路を形成していることを特徴とする請求項1又は請求項2に記載の発光素子装置。
- 前記ベース体が、表面粗さがRmaxで0.8Sより小とした光学的反射性の表面を有する金属からなることを特徴とする請求項1又は請求項2に記載の発光素子装置。
- 前記透明絶縁層の上に形成された導電性回路が、金属ナノペーストを用いて形成されていることを特徴とする請求項1又は請求項2に記載の発光素子装置。
- 外面に端子電極を有する発光素子を少なくとも1個搭載し、その端子電極に電流を流すことによりその発光素子を発光させる発光素子装置の製造方法において、
パターニングされた導電性回路が形成されていないベース体であって熱伝導率が50W/mK以上であるベース体上に発光素子を発光面およびその発光面に備えた端子電極を上にして搭載する工程と、
前記ベース体及び当該ベース体上に搭載した発光素子を覆う透明絶縁層を形成する工程と、
前記透明絶縁層を通して前記発光素子の端子電極位置を確認して位置決めするとともに当該位置決めした端子電極位置であって、前記発光素子の発光面の直上における前記透明絶縁層にレーザビームを用いてビアホールを形成する工程と、
前記発光素子の端子電極に電気を流すためのビアホール内電気接続回路及び前記ビアホール内電気接続回路に電気的に接続された透明絶縁層上のパターニングされた導電性回路を、金属ナノペーストを用いると共に該金属ナノペーストによる回路パターン描画をディスペンサを用いる方法又はインクジェット法又はスクリーン印刷法のいずれかを用いて形成する工程と、を備えたことを特徴とする発光素子装置の製造方法。
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JP6029821B2 (ja) * | 2011-11-25 | 2016-11-24 | 富士機械製造株式会社 | 発光素子パッケージ及びその製造方法 |
JP2013115377A (ja) * | 2011-11-30 | 2013-06-10 | Kyocera Corp | 光照射デバイス、光照射モジュールおよび印刷装置 |
US10115862B2 (en) | 2011-12-27 | 2018-10-30 | eLux Inc. | Fluidic assembly top-contact LED disk |
JP6081087B2 (ja) * | 2012-06-14 | 2017-02-15 | 富士機械製造株式会社 | 発光素子パッケージ及びその製造方法 |
JP6037544B2 (ja) * | 2012-06-19 | 2016-12-07 | 富士機械製造株式会社 | Ledパッケージ及びその製造方法 |
US9985190B2 (en) | 2016-05-18 | 2018-05-29 | eLux Inc. | Formation and structure of post enhanced diodes for orientation control |
US9755110B1 (en) | 2016-07-27 | 2017-09-05 | Sharp Laboratories Of America, Inc. | Substrate with topological features for steering fluidic assembly LED disks |
US9892944B2 (en) | 2016-06-23 | 2018-02-13 | Sharp Kabushiki Kaisha | Diodes offering asymmetric stability during fluidic assembly |
US9917226B1 (en) | 2016-09-15 | 2018-03-13 | Sharp Kabushiki Kaisha | Substrate features for enhanced fluidic assembly of electronic devices |
US10249599B2 (en) | 2016-06-29 | 2019-04-02 | eLux, Inc. | Laminated printed color conversion phosphor sheets |
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US9627437B1 (en) | 2016-06-30 | 2017-04-18 | Sharp Laboratories Of America, Inc. | Patterned phosphors in through hole via (THV) glass |
US10243097B2 (en) | 2016-09-09 | 2019-03-26 | eLux Inc. | Fluidic assembly using tunable suspension flow |
AU2017351056B2 (en) | 2016-10-24 | 2020-08-27 | Invuity, Inc. | Lighting element |
US9837390B1 (en) | 2016-11-07 | 2017-12-05 | Corning Incorporated | Systems and methods for creating fluidic assembly structures on a substrate |
KR102603411B1 (ko) | 2017-12-18 | 2023-11-16 | 엘지디스플레이 주식회사 | 마이크로led 표시장치 |
JP7335498B2 (ja) * | 2019-09-03 | 2023-08-30 | 日亜化学工業株式会社 | 発光装置、及びその製造方法 |
TWI822286B (zh) | 2022-08-31 | 2023-11-11 | 晶呈科技股份有限公司 | 垂直型發光二極體晶粒的封裝方法 |
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