JP5141732B2 - イオン源電極のクリーニング方法 - Google Patents

イオン源電極のクリーニング方法 Download PDF

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Publication number
JP5141732B2
JP5141732B2 JP2010179909A JP2010179909A JP5141732B2 JP 5141732 B2 JP5141732 B2 JP 5141732B2 JP 2010179909 A JP2010179909 A JP 2010179909A JP 2010179909 A JP2010179909 A JP 2010179909A JP 5141732 B2 JP5141732 B2 JP 5141732B2
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Japan
Prior art keywords
electrode
cleaning
glow discharge
gas
plasma
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Active
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JP2010179909A
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English (en)
Japanese (ja)
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JP2012038668A (ja
Inventor
武 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Ion Equipment Co Ltd
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Nissin Ion Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Nissin Ion Equipment Co Ltd filed Critical Nissin Ion Equipment Co Ltd
Priority to JP2010179909A priority Critical patent/JP5141732B2/ja
Priority to CN201110137140.XA priority patent/CN102376513B/zh
Priority to KR1020110067169A priority patent/KR101243748B1/ko
Publication of JP2012038668A publication Critical patent/JP2012038668A/ja
Application granted granted Critical
Publication of JP5141732B2 publication Critical patent/JP5141732B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/15—External mechanical adjustment of electron or ion optical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2010179909A 2010-08-11 2010-08-11 イオン源電極のクリーニング方法 Active JP5141732B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010179909A JP5141732B2 (ja) 2010-08-11 2010-08-11 イオン源電極のクリーニング方法
CN201110137140.XA CN102376513B (zh) 2010-08-11 2011-05-24 离子源电极的清洗方法
KR1020110067169A KR101243748B1 (ko) 2010-08-11 2011-07-07 이온원 전극의 클리닝 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010179909A JP5141732B2 (ja) 2010-08-11 2010-08-11 イオン源電極のクリーニング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012200149A Division JP5370556B2 (ja) 2012-09-12 2012-09-12 イオン源電極のクリーニング方法

Publications (2)

Publication Number Publication Date
JP2012038668A JP2012038668A (ja) 2012-02-23
JP5141732B2 true JP5141732B2 (ja) 2013-02-13

Family

ID=45794945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010179909A Active JP5141732B2 (ja) 2010-08-11 2010-08-11 イオン源電極のクリーニング方法

Country Status (3)

Country Link
JP (1) JP5141732B2 (ko)
KR (1) KR101243748B1 (ko)
CN (1) CN102376513B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5370462B2 (ja) * 2011-11-07 2013-12-18 日新イオン機器株式会社 イオン源電極のクリーニング装置
CN103515172B (zh) * 2012-06-22 2016-07-20 日新离子机器株式会社 离子束照射装置和离子束照射装置的运转方法
US9530615B2 (en) 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
US20140127394A1 (en) * 2012-11-07 2014-05-08 Varian Semiconductor Equipment Associates, Inc. Reducing Glitching In An Ion Implanter
US9006690B2 (en) * 2013-05-03 2015-04-14 Axcelis Technologies, Inc. Extraction electrode assembly voltage modulation in an ion implantation system
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
DE102014226039A1 (de) 2014-12-16 2016-06-16 Carl Zeiss Smt Gmbh Ionisierungseinrichtung und Massenspektrometer damit
JP6480222B2 (ja) * 2015-03-18 2019-03-06 株式会社アルバック イオンビーム装置、イオン注入装置、イオンビーム放出方法
DE112015006730T5 (de) 2015-08-20 2018-04-12 Hitachi High-Technologies Corporation lonenstrahlvorrichtung und Reinigungsverfahren für eine Gasfeldionenquelle
CN107999469B (zh) * 2017-11-20 2021-04-27 安徽晓星能源科技有限公司 一种中频交流辉光清洗电源

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262339A (ja) * 1984-06-07 1985-12-25 Jeol Ltd 加速管のコンデシヨニング方法
JPS62180944A (ja) * 1986-02-05 1987-08-08 Hitachi Ltd イオン打込装置用イオン源
JPH0746588B2 (ja) * 1986-09-09 1995-05-17 日本電信電話株式会社 マイクロ波イオン源
JPH02207442A (ja) * 1989-02-07 1990-08-17 Fuji Electric Co Ltd 荷電粒子装置
JPH1083899A (ja) * 1996-09-09 1998-03-31 Ebara Corp 中性粒子線源
US5992244A (en) * 1998-03-04 1999-11-30 Regents Of The University Of Minnesota Charged particle neutralizing apparatus and method of neutralizing charged particles
JPH11329336A (ja) * 1998-05-11 1999-11-30 Nissin Electric Co Ltd イオン注入装置
JP2000350970A (ja) * 1999-05-10 2000-12-19 Eaton Corp イオン注入装置における汚染された表面を洗浄するための方法および装置
JP2001229841A (ja) 2000-02-21 2001-08-24 Hitachi Ltd 引出し電極のクリーニング方法及びイオンビーム処理装置
JP4374487B2 (ja) * 2003-06-06 2009-12-02 株式会社Ｓｅｎ イオン源装置およびそのクリーニング最適化方法
CN101302606A (zh) * 2007-05-11 2008-11-12 北京石油化工学院 镁合金表面强化方法及其装置
US8969795B2 (en) * 2008-10-06 2015-03-03 Shimadzu Corporation Curtain gas filter for mass- and mobility-analyzers that excludes ion-source gases and ions of high mobility
US8263944B2 (en) * 2008-12-22 2012-09-11 Varian Semiconductor Equipment Associates, Inc. Directional gas injection for an ion source cathode assembly

Also Published As

Publication number Publication date
CN102376513B (zh) 2015-06-10
JP2012038668A (ja) 2012-02-23
KR20120022549A (ko) 2012-03-12
KR101243748B1 (ko) 2013-03-13
CN102376513A (zh) 2012-03-14

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