JP5140004B2 - ハニカム構造体 - Google Patents
ハニカム構造体 Download PDFInfo
- Publication number
- JP5140004B2 JP5140004B2 JP2009000980A JP2009000980A JP5140004B2 JP 5140004 B2 JP5140004 B2 JP 5140004B2 JP 2009000980 A JP2009000980 A JP 2009000980A JP 2009000980 A JP2009000980 A JP 2009000980A JP 5140004 B2 JP5140004 B2 JP 5140004B2
- Authority
- JP
- Japan
- Prior art keywords
- honeycomb structure
- base substrate
- average pore
- pore diameter
- porosity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 239000011148 porous material Substances 0.000 claims description 101
- 239000000758 substrate Substances 0.000 claims description 93
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- 239000002002 slurry Substances 0.000 claims description 41
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- 239000000463 material Substances 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 33
- 238000005192 partition Methods 0.000 claims description 32
- 230000004048 modification Effects 0.000 claims description 26
- 238000012986 modification Methods 0.000 claims description 26
- 238000005304 joining Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000003054 catalyst Substances 0.000 claims description 8
- 238000005470 impregnation Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 description 18
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 230000009467 reduction Effects 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
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- 239000002184 metal Substances 0.000 description 5
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- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 4
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
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- 229910052863 mullite Inorganic materials 0.000 description 2
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- 239000013618 particulate matter Substances 0.000 description 2
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- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
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- 230000004323 axial length Effects 0.000 description 1
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- 239000003795 chemical substances by application Substances 0.000 description 1
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- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
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- 239000000945 filler Substances 0.000 description 1
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- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- -1 hydroxypropoxyl Chemical group 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Images
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
- F01N2330/00—Structure of catalyst support or particle filter
- F01N2330/06—Ceramic, e.g. monoliths
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
- F01N2330/00—Structure of catalyst support or particle filter
- F01N2330/30—Honeycomb supports characterised by their structural details
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
- F01N2330/00—Structure of catalyst support or particle filter
- F01N2330/60—Discontinuous, uneven properties of filter material, e.g. different material thickness along the longitudinal direction; Higher filter capacity upstream than downstream in same housing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
- F01N3/00—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust
- F01N3/02—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust
- F01N3/021—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of filters
- F01N3/033—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of filters in combination with other devices
- F01N3/035—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of filters in combination with other devices with catalytic reactors, e.g. catalysed diesel particulate filters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/10—Internal combustion engine [ICE] based vehicles
- Y02T10/12—Improving ICE efficiencies
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Filtering Materials (AREA)
- Processes For Solid Components From Exhaust (AREA)
- Catalysts (AREA)
Description
SiC粉末及び金属Si粉末を80:20の質量割合で混合し、これに造孔材、有機バインダー、界面活性剤及び水を添加して、可塑性の坏土を得た。この坏土を押出成形し、乾燥させてハニカム状成形体を得た。このハニカム状成形体に対し、その両端面が市松模様状を呈するように、各セルの一端部に目封止部を形成した。すなわち、隣接するセルが、互いに反対側の端部で封じられるように目封止部の形成を行った。目封止部の材料には、ハニカム状成形体と同じ材料を用いた。こうして目封止部を形成し、乾燥させた後、ハニカム状成形体を、大気雰囲気中、約400℃で脱脂し、更に、Ar雰囲気において約1450℃で焼成して、成形体中のSiC粒子をSiで結合させることにより、表1〜10に示すような気孔率と平均細孔径とを有し、隔壁の厚さが12mil(305μm)、セル形状が正方形、セル密度が約46.5セル/cm2(300セル/平方インチ)、断面が一辺35mmの正方形、軸方向の長さが152mmである四角柱状のハニカムセグメントのベース基材を得た。なお、気孔率及び平均細孔径の測定方法は先述のとおりである。
合計16個のハニカムセグメントの内、外周部に位置する12個の外周セグメントと、その内側に位置する4個の中央セグメントとで、表8〜10に示すように、修飾部の修飾部長さ比、気孔率減少量及び平均細孔径減少量の何れか1つ以上が異なるようにした以外は、前記実施例1〜49及び比較例1〜21と同様にしてハニカム構造体を作製し、圧力損失増加率を求めた。その結果を表8〜10に示す。
コージェライト化原料として、タルク、カオリン、アルミナ、水酸化アルミニウム及びシリカを、化学組成がSiO2:42〜56質量%、Al2O3:30〜45質量%、MgO:12〜16質量%となるような質量割合で混合し、これに造孔材、有機バインダー、界面活性剤及び水を添加して、可塑性の坏土を得た。この坏土を押出成形し、乾燥させてハニカム状成形体を得た。このハニカム状成形体に対し、その両端面が市松模様状を呈するように、各セルの一端部に目封止部を形成した。すなわち、隣接するセルが、互いに反対側の端部で封じられるように目封部の形成を行った。目封止部の材料には、ハニカム状成形体と同じ材料を用いた。こうして目封止部を形成し、乾燥させた後、ハニカム状成形体を、大気雰囲気中において最高温度1400〜1430℃の温度範囲で焼成して、表11〜13に示すような気孔率と平均細孔径とを有し、隔壁の厚さが12mil(305μm)、セル形状が正方形、セル密度が約46.5セル/cm2(300セル/平方インチ)、断面が直径144mmの円形、軸方向の長さが152mmである円柱状のハニカム構造体のベース基材を得た。なお、気孔率及び平均細孔径の測定方法は先述のとおりである。
Claims (11)
- 流体の入口側となる入口側端面と流体の出口側となる出口側端面との間に、流体の流路となる複数のセルが多孔質の隔壁によって区画形成されたハニカム形状を有するセグメントを、前記セルの軸方向と垂直の方向において複数個組み合わせ、接合一体化することにより構成されたハニカム構造体であって、
前記セグメントは、ハニカム形状で多孔質のベース基材と、前記ベース基材の平均細孔径より小さい粒子を含むスラリーを、前記ベース基材の一部に含浸後、熱処理することにより形成された修飾部とを有し、
前記ベース基材は、気孔率が30〜80%、平均細孔径が5〜40μmであり、
前記修飾部は、前記セグメントの出口側端面から、前記セルの軸方向に沿って、前記セグメント全長の1/10〜1/2の長さまでの範囲に形成されており、前記ベース基材の気孔率に対し2〜20%低い気孔率と、前記ベース基材の平均細孔径に対し0.1〜10μm小さい平均細孔径とを有するハニカム構造体。 - 全ての前記セグメントにおいて、前記修飾部の長さ、気孔率及び平均細孔径が同一である請求項1に記載のハニカム構造体。
- 前記セグメントの内、ハニカム構造体の外周部に位置する外周セグメントと、その内側に位置する中央セグメントとで、前記修飾部の長さ、気孔率及び平均細孔径の何れか1つ以上が異なっている請求項1に記載のハニカム構造体。
- 流体の入口側となる入口側端面と流体の出口側となる出口側端面との間に、流体の流路となる複数のセルが多孔質の隔壁によって区画形成されたハニカム形状を有するセグメントを、前記セルの軸方向と垂直の方向において複数個組み合わせ、接合一体化することにより構成されたハニカム構造体であって、
前記セグメントの内、ハニカム構造体の外周部に位置する外周セグメントは、ハニカム形状で多孔質のベース基材のみからなり、
前記外周セグメントの内側に位置する中央セグメントの内の少なくとも一部の中央セグメントは、前記ベース基材と、前記ベース基材の平均細孔径より小さい粒子を含むスラリーを、前記ベース基材の一部に含浸後、熱処理することにより形成された修飾部とを有するとともに、残りの中央セグメントは、前記外周セグメントと同様に前記ベース基材のみからなり、
前記ベース基材は、気孔率が30〜80%、平均細孔径が5〜40μmであり、
前記修飾部は、前記中央セグメントの出口側端面から、前記セルの軸方向に沿って、前記セグメント全長の1/10〜1/2の長さまでの範囲に形成されており、前記ベース基材の気孔率に対し2〜20%低い気孔率と、前記ベース基材の平均細孔径に対し0.1〜10μm小さい平均細孔径とを有するハニカム構造体。 - 流体の入口側となる入口側端面と流体の出口側となる出口側端面との間に、流体の流路となる複数のセルが多孔質の隔壁によって区画形成されたハニカム構造体であって、
前記ハニカム構造体は、ハニカム形状で多孔質のベース基材と、前記ベース基材の平均細孔径より小さい粒子を含むスラリーを、前記ベース基材の一部に含浸後、熱処理することにより形成された修飾部とを有し、
前記ベース基材は、気孔率が30〜80%、平均細孔径が5〜40μmであり、
前記修飾部は、前記ハニカム構造体の出口側端面から、前記セルの軸方向に沿って、前記ハニカム構造体全長の1/10〜1/2の長さまでの範囲に形成されており、前記ベース基材の気孔率に対し2〜20%低い気孔率と、前記ベース基材の平均細孔径に対し0.1〜10μm小さい平均細孔径とを有するハニカム構造体。 - 前記ハニカム構造体の径方向全体において、前記修飾部の長さ、気孔率及び平均細孔径が同一である請求項5に記載のハニカム構造体。
- 前記ハニカム構造体の中央から外周に向かって、前記修飾部の長さ、気孔率及び平均細孔径の何れか1つ以上が連続的又は段階的に変化している請求項5に記載のハニカム構造体。
- 流体の入口側となる入口側端面と流体の出口側となる出口側端面との間に、流体の流路となる複数のセルが多孔質の隔壁によって区画形成されたハニカム構造体であって、
前記ハニカム構造体は、ハニカム形状で多孔質のベース基材と、前記ベース基材の平均細孔径より小さい粒子を含むスラリーを、前記ベース基材の一部に含浸後、熱処理することにより形成された修飾部とを有し、
前記修飾部は、前記ハニカム構造体の外周から中央に向かって前記ハニカム構造体の半径の1/10〜3/5までの部分を除き、前記ハニカム構造体の出口側端面から、前記セルの軸方向に沿って、前記ハニカム構造体全長の1/10〜1/2の長さまでの範囲に形成されており、前記ベース基材の気孔率に対し2〜20%低い気孔率と、前記ベース基材の平均細孔径に対し0.1〜10μm小さい平均細孔径とを有するハニカム構造体。 - 所定の前記セルの開口部を前記入口側端面で目封止するとともに、残余の前記セルの開口部を前記出口側端面で目封止する目封止部を備えた請求項1〜8の何れか一項に記載のハニカム構造体。
- 前記入口側端面の開口率が、前記出口側端面の開口率より大きい請求項9に記載のハニカム構造体。
- 前記隔壁に触媒成分が担持された請求項1〜10の何れか一項に記載のハニカム構造体。
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JP5351524B2 (ja) | 2008-10-14 | 2013-11-27 | 日本碍子株式会社 | ハニカム構造体 |
JP5419505B2 (ja) * | 2009-03-24 | 2014-02-19 | 日本碍子株式会社 | ハニカム構造体の製造方法及びハニカム触媒体の製造方法 |
WO2011125768A1 (ja) * | 2010-03-31 | 2011-10-13 | 日本碍子株式会社 | ハニカムフィルタ |
FR2969696B1 (fr) * | 2010-12-23 | 2013-01-04 | Saint Gobain Ct Recherches | Filtre a particules du type assemble |
DE102012220181A1 (de) * | 2012-11-06 | 2014-05-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Partikelfilter |
JP6718136B2 (ja) * | 2016-03-17 | 2020-07-08 | 三菱自動車工業株式会社 | 排気浄化装置 |
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CN112519273B (zh) * | 2020-11-03 | 2022-09-20 | 哈尔滨哈飞航空工业有限责任公司 | 一种铝面板蜂窝夹层结构超大面积脱粘的修理方法 |
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