JP5137297B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP5137297B2 JP5137297B2 JP2005147898A JP2005147898A JP5137297B2 JP 5137297 B2 JP5137297 B2 JP 5137297B2 JP 2005147898 A JP2005147898 A JP 2005147898A JP 2005147898 A JP2005147898 A JP 2005147898A JP 5137297 B2 JP5137297 B2 JP 5137297B2
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- emitting element
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- circuit
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- source
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- 238000012937 correction Methods 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 16
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- 238000012544 monitoring process Methods 0.000 description 14
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- 238000012545 processing Methods 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 7
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- 229910018125 Al-Si Inorganic materials 0.000 description 5
- 229910018520 Al—Si Inorganic materials 0.000 description 5
- 229910015345 MOn Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000032683 aging Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 3
- 150000004696 coordination complex Chemical class 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Description
(実施の形態1)
(実施の形態2)
その結果、画素10が含むスイッチング用トランジスタ11はオン状態となる。そして、ソースドライバ43が含む電源53の電位が駆動用トランジスタ12のゲート電極に伝達され、駆動用トランジスタ12はオフ状態となり、発光素子13の両電極の電位は同電位となる。つまり、この期間では、発光素子13が非発光となる消去動作が行われる。
(実施の形態3)
(実施の形態4)
(実施の形態5)
(実施の形態6)
Claims (1)
- 第1の発光素子、第1のトランジスタ、第2のトランジスタ及び容量素子を含む画素を複数有する画素領域と、
第2の発光素子と、
前記第2の発光素子に一定の電流を供給する定電流源と、
前記複数の画素から選別したいくつかの画素の点灯時間を前記複数の画素から選別したいくつかの画素のそれぞれに供給されるビデオ信号に基づいて算出し、前記算出した点灯時間の平均値を第1の信号として出力する第1の回路と、
前記第1の発光素子の電流電圧特性の経時特性を記憶する第2の回路と、
前記第2の発光素子の出力、前記第1の信号及び前記経時特性に基づき、補正データを作成する第3の回路と、
前記補正データに基づき電源電位を補正し、かつ、補正した前記電源電位を電源線に供給する第4の回路と、
ソースドライバと、
第1のゲートドライバと、
第2のゲートドライバと、を有し、
前記第1のトランジスタは、ゲートはゲート線に、ソース又はドレインの一方はソース線に、ソース又はドレインの他方は前記第2のトランジスタのゲートに電気的に接続され、
前記第2のトランジスタは、ソース又はドレインの一方は前記第1の発光素子に、ソース又はドレインの他方は前記電源線に電気的に接続され、
前記容量素子は、第1の電極は前記第2のトランジスタのゲートに、第2の電極は前記第2のトランジスタのソース又はドレインの他方に電気的に接続され、
前記第1のゲートドライバは、第1の選択回路と、前記第1の選択回路を介して前記ゲート線と電気的に接続される第1のパルス出力回路と、を有し、
前記第2のゲートドライバは、第2の選択回路と、前記第2の選択回路を介して前記ゲート線と電気的に接続される第2のパルス出力回路と、を有し、
前記第1の選択回路が動作状態であり、且つ前記第2の選択回路が不定状態である期間において、前記第1のパルス出力回路から前記ゲート線に第1の選択信号が出力され、前記ソースドライバから前記ソース線にビデオ信号が出力され、
前記第1の選択回路が不定状態であり、且つ前記第2の選択回路が動作状態である期間において、前記第2のパルス出力回路から前記ゲート線に第2の選択信号が出力され、前記ソースドライバから前記ソース線に前記第2のトランジスタをオフにする電圧が出力されることを特徴とする表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005147898A JP5137297B2 (ja) | 2004-05-21 | 2005-05-20 | 表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004152600 | 2004-05-21 | ||
JP2004152600 | 2004-05-21 | ||
JP2005147898A JP5137297B2 (ja) | 2004-05-21 | 2005-05-20 | 表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006011410A JP2006011410A (ja) | 2006-01-12 |
JP2006011410A5 JP2006011410A5 (ja) | 2008-05-15 |
JP5137297B2 true JP5137297B2 (ja) | 2013-02-06 |
Family
ID=35778696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005147898A Expired - Fee Related JP5137297B2 (ja) | 2004-05-21 | 2005-05-20 | 表示装置 |
Country Status (1)
Country | Link |
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JP (1) | JP5137297B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007240799A (ja) * | 2006-03-08 | 2007-09-20 | Sony Corp | 自発光表示装置、ホワイトバランス調整装置及びプログラム |
CN102356697B (zh) | 2009-03-18 | 2014-05-28 | 株式会社半导体能源研究所 | 照明装置 |
JP2011118301A (ja) * | 2009-12-07 | 2011-06-16 | Sony Corp | 表示装置およびその駆動方法ならびに電子機器 |
JP2011118300A (ja) * | 2009-12-07 | 2011-06-16 | Sony Corp | 表示装置およびその駆動方法ならびに電子機器 |
KR101869681B1 (ko) * | 2010-08-20 | 2018-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 조명 장치 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001324958A (ja) * | 2000-03-10 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 電子装置およびその駆動方法 |
JP2002229513A (ja) * | 2001-02-06 | 2002-08-16 | Tohoku Pioneer Corp | 有機el表示パネルの駆動装置 |
JP4843156B2 (ja) * | 2001-06-13 | 2011-12-21 | 株式会社日立国際電気 | 表示装置 |
JP2003029710A (ja) * | 2001-07-19 | 2003-01-31 | Nippon Seiki Co Ltd | 有機エレクトロルミネセンス素子の駆動回路 |
JP2003330419A (ja) * | 2002-05-15 | 2003-11-19 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP4447262B2 (ja) * | 2002-07-25 | 2010-04-07 | 株式会社半導体エネルギー研究所 | 表示装置、表示装置の駆動方法及び電子機器 |
-
2005
- 2005-05-20 JP JP2005147898A patent/JP5137297B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2006011410A (ja) | 2006-01-12 |
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