JP5135348B2 - メモリ装置の信頼性、可用性、およびサービス性の改善 - Google Patents
メモリ装置の信頼性、可用性、およびサービス性の改善 Download PDFInfo
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- JP5135348B2 JP5135348B2 JP2009530716A JP2009530716A JP5135348B2 JP 5135348 B2 JP5135348 B2 JP 5135348B2 JP 2009530716 A JP2009530716 A JP 2009530716A JP 2009530716 A JP2009530716 A JP 2009530716A JP 5135348 B2 JP5135348 B2 JP 5135348B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
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- For Increasing The Reliability Of Semiconductor Memories (AREA)
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Description
Claims (15)
- エラー検出モードおよび非エラー検出モードで動作することのできるメモリ装置において、前記メモリ装置は、
前記エラー検出モードである場合には、データ・ビットを格納する第1部分、および、前記データ・ビットに対応するエラー訂正コード(ECC)ビット(格納されたECCビット)を格納する第2部分を有するメモリ・コアであって、前記非エラー検出モード中では、前記第1部分および第2部分は、データ・ビットを格納する、メモリ・コアと、
前記メモリ・コアと同じダイ上のエラー訂正ロジックであって、前記エラー訂正ロジックは、前記データ・ビットに対応するECCビット(計算されたECCビット)を計算するためのECC計算ロジックを含む、エラー訂正ロジックと、
から構成され、
前記エラー訂正ロジックは、前記データ・ビット内のエラーを訂正するためのECC訂正ロジック、前記格納されたECCビットを前記計算されたECCビットと比較するためのコンパレータ、前記データ・ビットに対応するCRCビットを生成するための巡回冗長コード(CRC)生成ロジック、および、前記CRCビットおよび前記データ・ビットをリクエスタに送るためのフレーミング・ロジックをさらに含む、
ことを特徴とするメモリ装置。 - 前記メモリ・コアは、前記第1部分に対応する第1メモリ・バンクおよび前記第2部分に対応する第2メモリ・バンクを有するメモリ・バンクの分割バンク対を含むことを特徴とする請求項1記載のメモリ装置。
- 前記メモリ装置は、ダイナミック・ランダム・アクセス・メモリ(DRAM)装置を含むことを特徴とする請求項1記載のメモリ装置。
- 前記メモリ装置は、エラー検出モードおよび非エラー検出モードで動作可能であることを特徴とする請求項1記載のメモリ装置。
- 前記メモリ装置は、前記格納されたECCビットを前記メモリ・コアの前記第2部分にマッピングするためのマッピング・ロジックをさらに含むことを特徴とする請求項4記載のメモリ装置。
- メモリ装置の信頼性を改善する方法において、前記方法は、
メモリ・コアの第1部分からデータ・ビットを読取る段階と、
前記メモリ・コアの第2部分から、格納されたエラー訂正コード(ECC)ビットを読取る段階と、
ECC計算ロジックを使用して計算されたECCビットを生成する段階であって、前記メモリ・コアおよび前記ECC計算ロジックは、共通の集積回路上にある、段階と、
前記格納されたECCビットが前記計算されたECCビットと一致するかどうかを決定するために、前記格納されたECCビットを前記計算されたECCビットと比較する段階と、
前記シングル・ビット・エラーの訂正に続き、前記データ・ビットに対応する巡回冗長コード(CRC)ビットおよび前記データ・ビットをリクエスタに送る段階と、
から構成されることを特徴とする方法。 - 前記メモリ・コアは、前記第1部分に対応する第1メモリ・バンクおよび前記第2部分に対応する第2メモリ・バンクを有する、メモリ・バンクの分割バンク対を含むことを特徴とする請求項6記載の方法。
- 前記格納されたECCビットが前記計算されたECCビットと一致する場合は、前記データ・ビットに対応する巡回冗長コード(CRC)ビットを計算する段階と、
前記CRCビットおよび前記データ・ビットをリクエスタに送る段階と、
をさらに含むことを特徴とする請求項6記載の方法。 - 前記格納されたECCビットが前記計算されたECCビットと一致しない場合は、前記データ・ビットがシングル・ビット・エラーを含むかどうかを決定する段階と、
前記データ・ビットがシングル・ビット・エラーを含む場合は、その後、ECC訂正ロジックを使用して前記シングル・ビット・エラーを訂正する段階であって、前記ECC訂正ロジックおよび前記メモリ・コアは共通の集積回路上にある、段階と、
をさらに含むことを特徴とする請求項8記載の方法。 - 前記CRCビットおよび前記データ・ビットを前記リクエスタに送る段階は、
読取りデータ・フレーム内の前記データ・ビットをフレーミングする段階、
前記CRCビットを前記読取りデータ・フレームに追加する段階、および、
前記読取りデータ・フレームを前記リクエスタに送る段階、
を含むことを特徴とする請求項6記載の方法。 - 前記データ・ビットがシングル・ビット・エラーを含まない場合は、エラーをリクエスタに報告する段階をさらに含むことを特徴とする請求項9記載の方法。
- メモリ装置の信頼性を改善するシステムにおいて、前記システムは、
ダイナミック・ランダム・アクセス・メモリ(DRAM)装置と、
前記DRAM装置に結合されたリクエスタと、
から構成され、
前記DRAM装置は、
第1メモリ・バンクおよび第2メモリ・バンクを含むメモリ・バンクの分割バンク対であって、前記DRAM装置がエラー検出モードである場合は、データ・ビットは前記第1メモリ・バンクに格納され、対応するエラー訂正コード(ECC)ビット(格納されたECCビット)は前記第2メモリ・バンクに格納される、メモリ・バンクの分割バンク対、および、
前記分割バンク対と同じダイ上のエラー訂正ロジックであって、前記データ・ビット内のエラーを訂正するためのECC訂正ロジック、前記格納されたECCビットを前記計算されたECCビットと比較するためのコンパレータ、前記データ・ビットに対応するCRCビットを生成するための巡回冗長コード(CRC)生成ロジック、および、前記CRCビットおよび前記データ・ビットをリクエスタに送るためのフレーミング・ロジックを含むエラー訂正ロジック、
を含むことを特徴とするシステム。 - 前記エラー訂正ロジックは、前記データ・ビット内のエラーを訂正するためのECC訂正ロジックを含むことを特徴とする請求項12記載のシステム。
- 前記エラー訂正ロジックは、前記格納されたECCビットを前記計算されたECCビットと比較するためのコンパレータをさらに含むことを特徴とする請求項13記載のシステム。
- 前記エラー訂正ロジックは、前記データ・ビットに対応するCRCビットを生成するための巡回冗長コード(CRC)生成ロジックをさらに含むことを特徴とする請求項12記載のシステム。
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US11/479,067 | 2006-06-30 | ||
US11/479,067 US7774684B2 (en) | 2006-06-30 | 2006-06-30 | Reliability, availability, and serviceability in a memory device |
PCT/US2007/072295 WO2008005781A2 (en) | 2006-06-30 | 2007-06-27 | Improving reliability, availability, and serviceability in a memory device |
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JP2009540477A JP2009540477A (ja) | 2009-11-19 |
JP5135348B2 true JP5135348B2 (ja) | 2013-02-06 |
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EP (1) | EP2035938B1 (ja) |
JP (1) | JP5135348B2 (ja) |
KR (1) | KR101047241B1 (ja) |
CN (2) | CN102394112B (ja) |
AT (1) | ATE545910T1 (ja) |
TW (1) | TWI343581B (ja) |
WO (1) | WO2008005781A2 (ja) |
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JP2009540477A (ja) | 2009-11-19 |
US20080005646A1 (en) | 2008-01-03 |
KR20090016604A (ko) | 2009-02-16 |
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