JP5130589B2 - 半導体装置の製造方法および酸化処理装置 - Google Patents
半導体装置の製造方法および酸化処理装置 Download PDFInfo
- Publication number
- JP5130589B2 JP5130589B2 JP2009076054A JP2009076054A JP5130589B2 JP 5130589 B2 JP5130589 B2 JP 5130589B2 JP 2009076054 A JP2009076054 A JP 2009076054A JP 2009076054 A JP2009076054 A JP 2009076054A JP 5130589 B2 JP5130589 B2 JP 5130589B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- radicals
- oxidation
- oxide film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003647 oxidation Effects 0.000 title claims description 102
- 238000007254 oxidation reaction Methods 0.000 title claims description 102
- 239000004065 semiconductor Substances 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 139
- 238000000034 method Methods 0.000 claims description 73
- 230000008569 process Effects 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 93
- 239000007789 gas Substances 0.000 description 29
- 230000005284 excitation Effects 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 19
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000002407 reforming Methods 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001872 inorganic gas Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009076054A JP5130589B2 (ja) | 2009-03-26 | 2009-03-26 | 半導体装置の製造方法および酸化処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009076054A JP5130589B2 (ja) | 2009-03-26 | 2009-03-26 | 半導体装置の製造方法および酸化処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010232280A JP2010232280A (ja) | 2010-10-14 |
| JP2010232280A5 JP2010232280A5 (enrdf_load_stackoverflow) | 2011-12-01 |
| JP5130589B2 true JP5130589B2 (ja) | 2013-01-30 |
Family
ID=43047868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009076054A Active JP5130589B2 (ja) | 2009-03-26 | 2009-03-26 | 半導体装置の製造方法および酸化処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5130589B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6550962B2 (ja) * | 2015-06-24 | 2019-07-31 | 株式会社デンソー | 炭化珪素半導体のエピタキシャル成長装置 |
| KR102758455B1 (ko) * | 2023-01-19 | 2025-01-22 | (주)이큐테크플러스 | 고온 산화 공정 시 계면의 결함 증가를 최소화 하는 박막의 생성 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19524214A1 (de) * | 1995-07-03 | 1997-01-09 | Abb Research Ltd | Elektrofilter |
| JPH11145131A (ja) * | 1997-03-18 | 1999-05-28 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置、及び半導体装置 |
| JP4376496B2 (ja) * | 2001-11-08 | 2009-12-02 | 株式会社明電舎 | 酸化膜形成方法及びその装置 |
-
2009
- 2009-03-26 JP JP2009076054A patent/JP5130589B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010232280A (ja) | 2010-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI283429B (en) | Processing apparatus, manufacturing apparatus, processing method, and manufacturing method of electronic device | |
| TWI228774B (en) | Forming method of insulation film | |
| JP5219815B2 (ja) | 引張応力を有するシリコン酸窒化膜を形成する方法 | |
| US6897149B2 (en) | Method of producing electronic device material | |
| US7601648B2 (en) | Method for fabricating an integrated gate dielectric layer for field effect transistors | |
| JP4164324B2 (ja) | 半導体装置の製造方法 | |
| CN100429783C (zh) | 半导体装置及其制造方法 | |
| US20050136610A1 (en) | Process for forming oxide film, apparatus for forming oxide film and material for electronic device | |
| TW200814205A (en) | A method for fabricating a gate dielectric layer utilized in a gate structure | |
| WO2010038900A1 (ja) | 酸化珪素膜、酸化珪素膜の形成方法、および、プラズマｃｖｄ装置 | |
| WO2011008456A2 (en) | Methods of forming oxide layers on substrates | |
| KR19980080423A (ko) | 반도체장치의 제조방법 및 반도체의 제조장치 | |
| TW200913069A (en) | Methods for low temperature oxidation of a semiconductor device | |
| US20090275183A1 (en) | Method of manufacturing semiconductor device | |
| KR20060118620A (ko) | 기판 처리 방법 및 반도체 장치의 제조 방법 | |
| JPWO2008117798A1 (ja) | 窒化珪素膜の形成方法、不揮発性半導体メモリ装置の製造方法、不揮発性半導体メモリ装置およびプラズマ処理装置 | |
| JP2013073950A (ja) | 半導体装置の製造方法 | |
| US7326655B2 (en) | Method of forming an oxide layer | |
| TWI716441B (zh) | 用於製造對於半導體應用的水平環繞式閘極裝置的奈米線的方法 | |
| JP5130589B2 (ja) | 半導体装置の製造方法および酸化処理装置 | |
| JPH11145131A (ja) | 半導体装置の製造方法及び半導体製造装置、及び半導体装置 | |
| WO2010038887A1 (ja) | 二酸化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマｃｖｄ装置 | |
| TW201310532A (zh) | 閘極絕緣膜之形成方法及閘極絕緣膜之形成裝置 | |
| JP2007123662A (ja) | 半導体装置の製造方法および半導体装置 | |
| JP2002222810A (ja) | シリコン誘電体界面の均一性の改善及び表面粗さの削減方法。 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111014 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111014 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120706 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120710 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120907 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121009 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121018 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151116 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5130589 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |