JP5121162B2 - 半導体素子、発光装置及び電気機器 - Google Patents

半導体素子、発光装置及び電気機器 Download PDF

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Publication number
JP5121162B2
JP5121162B2 JP2006117011A JP2006117011A JP5121162B2 JP 5121162 B2 JP5121162 B2 JP 5121162B2 JP 2006117011 A JP2006117011 A JP 2006117011A JP 2006117011 A JP2006117011 A JP 2006117011A JP 5121162 B2 JP5121162 B2 JP 5121162B2
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layer
electrode
composite material
semiconductor
conductive layer
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JP2006117011A
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JP2006324655A (ja
JP2006324655A5 (https=
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忍 古川
良太 今林
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2006117011A 2005-04-22 2006-04-20 半導体素子、発光装置及び電気機器 Expired - Fee Related JP5121162B2 (ja)

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JP2006117011A JP5121162B2 (ja) 2005-04-22 2006-04-20 半導体素子、発光装置及び電気機器

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JP2005125807 2005-04-22
JP2005125807 2005-04-22
JP2006117011A JP5121162B2 (ja) 2005-04-22 2006-04-20 半導体素子、発光装置及び電気機器

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JP2006324655A JP2006324655A (ja) 2006-11-30
JP2006324655A5 JP2006324655A5 (https=) 2009-05-28
JP5121162B2 true JP5121162B2 (ja) 2013-01-16

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006319165A (ja) * 2005-05-13 2006-11-24 Sony Corp 発光素子、表示装置及び発光素子装置
JP5465825B2 (ja) * 2007-03-26 2014-04-09 出光興産株式会社 半導体装置、半導体装置の製造方法及び表示装置
JP4861886B2 (ja) * 2007-04-10 2012-01-25 パナソニック株式会社 有機ｅｌデバイス及び有機ｅｌディスプレイ
JP5148211B2 (ja) * 2007-08-30 2013-02-20 出光興産株式会社 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
KR101799601B1 (ko) 2008-10-16 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치
WO2011036866A1 (ja) * 2009-09-25 2011-03-31 出光興産株式会社 有機薄膜トランジスタ
KR101101479B1 (ko) * 2010-05-07 2012-01-03 한밭대학교 산학협력단 전하 주입성을 향상시킨 유기박막트랜지스터 및 이의 제조방법
JP5811640B2 (ja) * 2011-07-04 2015-11-11 ソニー株式会社 電子デバイス及び半導体装置の製造方法
KR101287368B1 (ko) 2011-10-24 2013-07-18 서강대학교산학협력단 트랜지스터 및 그 제조방법
CN104241330B (zh) * 2014-09-05 2017-05-03 京东方科技集团股份有限公司 有机发光二极管显示装置及其制作方法
JP6786100B2 (ja) * 2016-08-29 2020-11-18 国立研究開発法人物質・材料研究機構 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104439A (ja) * 1992-09-18 1994-04-15 Fujitsu Ltd 薄膜トランジスタおよびその製造方法
JP3745576B2 (ja) * 2000-03-14 2006-02-15 大日本印刷株式会社 Ｅｌ素子とその製造方法
JP4630420B2 (ja) * 2000-05-23 2011-02-09 ティーピーオー ホンコン ホールディング リミテッド パターン形成方法
JP4076769B2 (ja) * 2000-12-28 2008-04-16 株式会社半導体エネルギー研究所 発光装置及び電気器具
JP2004146430A (ja) * 2002-10-22 2004-05-20 Konica Minolta Holdings Inc 有機薄膜トランジスタ、有機ｔｆｔ装置およびそれらの製造方法
JP4396163B2 (ja) * 2003-07-08 2010-01-13 株式会社デンソー 有機ｅｌ素子
KR101085378B1 (ko) * 2003-07-10 2011-11-21 가부시키가이샤 이디알 스타 발광 소자 및 발광 장치
JP4355795B2 (ja) * 2003-07-15 2009-11-04 国立大学法人京都大学 有機半導体装置およびその製造方法、ならびに表示装置

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