JP5118659B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- JP5118659B2 JP5118659B2 JP2009041524A JP2009041524A JP5118659B2 JP 5118659 B2 JP5118659 B2 JP 5118659B2 JP 2009041524 A JP2009041524 A JP 2009041524A JP 2009041524 A JP2009041524 A JP 2009041524A JP 5118659 B2 JP5118659 B2 JP 5118659B2
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- light emitting
- light
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- 238000005401 electroluminescence Methods 0.000 claims description 11
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- 238000010030 laminating Methods 0.000 claims description 6
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- 239000000463 material Substances 0.000 description 32
- 238000012546 transfer Methods 0.000 description 25
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- 238000009826 distribution Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 238000013461 design Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
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- 238000000016 photochemical curing Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 1
- DNTVTBIKSZRANH-UHFFFAOYSA-N 4-(4-aminophenyl)-3-(3-methylphenyl)aniline Chemical compound CC1=CC=CC(C=2C(=CC=C(N)C=2)C=2C=CC(N)=CC=2)=C1 DNTVTBIKSZRANH-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Description
以下、本実施形態の発光素子について、図1(a)を用いて説明する。
本実施形態の発光素子20における基本構成は実施形態1と略同一であり、基板5の光取り出し面側に形成された凹凸構造を回折光学部4a,4bとして利用する代わりに、図5(a)に示すように基板5の内部に形成された屈折率の異なる領域によって回折光学部4e,4dを形成させた点が異なる。なお、実施形態1と同様の構成要素には、同一の符号を付して説明を適宜省略する。
2 陰極層
3 有機発光層
3y 発光層(黄色発光層)
3b 発光層(青色発光層)
4 回折光学素子
4a,4b,4c,4d,4e 回折光学部
5 基板
10 有機EL素子
20 発光素子
Claims (3)
- 陽極層と陰極層との間に少なくとも有機発光層が設けられた有機エレクトロルミネッセンス素子と、該有機エレクトロルミネッセンス素子の光出射面側に設けられた回折光学素子と、を有する発光素子であって、
前記有機エレクトロルミネッセンス素子の有機発光層は、主発光波長が異なる2層以上の発光層が積層されてなるとともに、前記回折光学素子は、前記有機発光層から放出される異なる主発光波長の光に対応して、それぞれ回折により前記有機エレクトロルミネッセンス素子の色収差を低減するように光の進行方向を変える複数の回折光学部を備えたことを特徴とする発光素子。 - 前記有機エレクトロルミネッセンス素子は光出射面側に透光性の基板を有するとともに、前記回折光学部の1つは前記基板の光取り出し面に形成された凹凸構造であることを特徴とする請求項1に記載の発光素子。
- 前記有機エレクトロルミネッセンス素子は光出射面側に透光性の基板を有するとともに、前記回折光学部は前記基板の内部に形成された屈折率が異なる領域であることを特徴とする請求項1に記載の発光素子。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009041524A JP5118659B2 (ja) | 2009-02-24 | 2009-02-24 | 発光素子 |
EP10746160A EP2403315A4 (en) | 2009-02-24 | 2010-02-22 | ELECTROLUMINESCENT ELEMENT |
CN201080013758.9A CN102362547B (zh) | 2009-02-24 | 2010-02-22 | 发光器件 |
KR1020147002185A KR101532700B1 (ko) | 2009-02-24 | 2010-02-22 | 발광 소자 |
PCT/JP2010/052620 WO2010098279A1 (ja) | 2009-02-24 | 2010-02-22 | 発光素子 |
US13/203,072 US8772761B2 (en) | 2009-02-24 | 2010-02-22 | Light emitting device |
KR1020117021977A KR20110126713A (ko) | 2009-02-24 | 2010-02-22 | 발광 소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009041524A JP5118659B2 (ja) | 2009-02-24 | 2009-02-24 | 発光素子 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012227684A Division JP5395942B2 (ja) | 2012-10-15 | 2012-10-15 | 発光素子 |
JP2012227685A Division JP5732617B2 (ja) | 2012-10-15 | 2012-10-15 | 発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010198881A JP2010198881A (ja) | 2010-09-09 |
JP5118659B2 true JP5118659B2 (ja) | 2013-01-16 |
Family
ID=42665486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009041524A Expired - Fee Related JP5118659B2 (ja) | 2009-02-24 | 2009-02-24 | 発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8772761B2 (ja) |
EP (1) | EP2403315A4 (ja) |
JP (1) | JP5118659B2 (ja) |
KR (2) | KR101532700B1 (ja) |
CN (1) | CN102362547B (ja) |
WO (1) | WO2010098279A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5357537B2 (ja) * | 2008-12-26 | 2013-12-04 | パナソニック株式会社 | 照明装置 |
JP5795935B2 (ja) * | 2010-10-20 | 2015-10-14 | 株式会社半導体エネルギー研究所 | 照明装置 |
KR101863271B1 (ko) * | 2011-09-09 | 2018-06-01 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
JP2013073799A (ja) * | 2011-09-28 | 2013-04-22 | Canon Inc | 表示装置 |
WO2013084442A1 (ja) | 2011-12-07 | 2013-06-13 | パナソニック株式会社 | シート及び発光装置 |
KR20140138886A (ko) * | 2012-04-13 | 2014-12-04 | 아사히 가세이 이-매터리얼즈 가부시키가이샤 | 반도체 발광 소자용 광추출체 및 발광 소자 |
EP2861041B1 (en) * | 2012-06-11 | 2016-11-09 | JX Nippon Oil & Energy Corporation | Organic el element and method for manufacturing same |
WO2014097387A1 (ja) | 2012-12-18 | 2014-06-26 | パイオニア株式会社 | 発光装置 |
KR102527387B1 (ko) | 2016-02-24 | 2023-04-28 | 삼성전자주식회사 | 발광 소자 패키지 및 그 제조 방법 |
KR101731562B1 (ko) * | 2016-06-03 | 2017-04-28 | 서울대학교 산학협력단 | 유기 발광 표시 장치 및 이의 제조 방법 |
CN109300395B (zh) * | 2018-10-12 | 2020-11-20 | 京东方科技集团股份有限公司 | 彩膜基板及其制备方法和包含它的量子点显示装置 |
KR102657274B1 (ko) * | 2018-12-31 | 2024-04-15 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
Family Cites Families (23)
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JP2991183B2 (ja) * | 1998-03-27 | 1999-12-20 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子 |
JP2002189113A (ja) | 2000-12-22 | 2002-07-05 | Canon Inc | 回折光学素子 |
JP2003115377A (ja) | 2001-10-03 | 2003-04-18 | Nec Corp | 発光素子、その製造方法およびこれを用いた表示装置 |
JP4017485B2 (ja) * | 2002-09-27 | 2007-12-05 | 富士フイルム株式会社 | 有機el発光素子 |
US7699482B2 (en) | 2002-09-25 | 2010-04-20 | Fujifilm Corporation | Light-emitting element |
JP4822243B2 (ja) * | 2003-03-25 | 2011-11-24 | 国立大学法人京都大学 | 発光素子及び有機エレクトロルミネセンス発光素子 |
EP1615472A1 (en) * | 2003-03-25 | 2006-01-11 | Kyoto University | Light-emitting device and organic electroluminescence light-emitting device |
JP2005141800A (ja) | 2003-11-04 | 2005-06-02 | Konica Minolta Opto Inc | 発散角変換素子及び光ピックアップ装置 |
KR20060110272A (ko) | 2003-11-04 | 2006-10-24 | 코니카 미놀타 옵토 인코포레이티드 | 광 픽업 장치 및 발산각 변환 소자 |
US7768023B2 (en) * | 2005-10-14 | 2010-08-03 | The Regents Of The University Of California | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices |
JP4747627B2 (ja) | 2004-07-23 | 2011-08-17 | 日立化成工業株式会社 | 回折型集光フィルム及びそれを用いた面光源装置 |
KR100649494B1 (ko) * | 2004-08-17 | 2006-11-24 | 삼성전기주식회사 | 레이저를 이용하여 발광 다이오드 기판을 표면 처리하는발광 다이오드 제조 방법 및 이 방법에 의해 제조된 발광다이오드 |
JP2006060144A (ja) | 2004-08-23 | 2006-03-02 | Matsushita Electric Ind Co Ltd | レンズアレイの製造方法および固体撮像装置の製造方法 |
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JP5035248B2 (ja) * | 2006-09-12 | 2012-09-26 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子並びにこれを備えた照明装置及び表示装置 |
JP5428124B2 (ja) * | 2006-09-27 | 2014-02-26 | 凸版印刷株式会社 | 有機el表示体 |
JP4858054B2 (ja) * | 2006-09-29 | 2012-01-18 | セイコーエプソン株式会社 | 発光装置および電子機器 |
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JP4999556B2 (ja) | 2007-05-31 | 2012-08-15 | リコー光学株式会社 | 表面に微細凹凸形状をもつ光学素子の製造方法 |
JP2009272059A (ja) * | 2008-04-30 | 2009-11-19 | Toppan Printing Co Ltd | El素子、el素子を用いた液晶ディスプレイ用バックライト装置、el素子を用いた照明装置、el素子を用いた電子看板装置、及びel素子を用いたディスプレイ装置 |
JP5357537B2 (ja) * | 2008-12-26 | 2013-12-04 | パナソニック株式会社 | 照明装置 |
-
2009
- 2009-02-24 JP JP2009041524A patent/JP5118659B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-22 US US13/203,072 patent/US8772761B2/en not_active Expired - Fee Related
- 2010-02-22 KR KR1020147002185A patent/KR101532700B1/ko active IP Right Grant
- 2010-02-22 CN CN201080013758.9A patent/CN102362547B/zh not_active Expired - Fee Related
- 2010-02-22 WO PCT/JP2010/052620 patent/WO2010098279A1/ja active Application Filing
- 2010-02-22 EP EP10746160A patent/EP2403315A4/en not_active Withdrawn
- 2010-02-22 KR KR1020117021977A patent/KR20110126713A/ko active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN102362547A (zh) | 2012-02-22 |
US20120049170A1 (en) | 2012-03-01 |
KR20140026640A (ko) | 2014-03-05 |
WO2010098279A1 (ja) | 2010-09-02 |
CN102362547B (zh) | 2015-07-29 |
EP2403315A4 (en) | 2013-03-20 |
EP2403315A1 (en) | 2012-01-04 |
KR20110126713A (ko) | 2011-11-23 |
JP2010198881A (ja) | 2010-09-09 |
US8772761B2 (en) | 2014-07-08 |
KR101532700B1 (ko) | 2015-07-01 |
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