JP5113913B2 - 中間接続層をもつタンデム式oled装置 - Google Patents
中間接続層をもつタンデム式oled装置 Download PDFInfo
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- JP5113913B2 JP5113913B2 JP2010544995A JP2010544995A JP5113913B2 JP 5113913 B2 JP5113913 B2 JP 5113913B2 JP 2010544995 A JP2010544995 A JP 2010544995A JP 2010544995 A JP2010544995 A JP 2010544995A JP 5113913 B2 JP5113913 B2 JP 5113913B2
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- Prior art keywords
- layer
- oled device
- alkali metal
- tandem oled
- organic
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- 229910052744 lithium Inorganic materials 0.000 claims description 16
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- DMEVMYSQZPJFOK-UHFFFAOYSA-N 3,4,5,6,9,10-hexazatetracyclo[12.4.0.02,7.08,13]octadeca-1(18),2(7),3,5,8(13),9,11,14,16-nonaene Chemical group N1=NN=C2C3=CC=CC=C3C3=CC=NN=C3C2=N1 DMEVMYSQZPJFOK-UHFFFAOYSA-N 0.000 claims description 5
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- 238000000608 laser ablation Methods 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 229940006487 lithium cation Drugs 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- FQHFBFXXYOQXMN-UHFFFAOYSA-M lithium;quinolin-8-olate Chemical compound [Li+].C1=CN=C2C([O-])=CC=CC2=C1 FQHFBFXXYOQXMN-UHFFFAOYSA-M 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical class CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- PZUGJLOCXUNFLM-UHFFFAOYSA-N n-ethenylaniline Chemical group C=CNC1=CC=CC=C1 PZUGJLOCXUNFLM-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- USPVIMZDBBWXGM-UHFFFAOYSA-N nickel;oxotungsten Chemical compound [Ni].[W]=O USPVIMZDBBWXGM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002900 organolithium compounds Chemical class 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 150000003220 pyrenes Polymers 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- SHNUBALDGXWUJI-UHFFFAOYSA-N pyridin-2-ylmethanol Chemical compound OCC1=CC=CC=N1 SHNUBALDGXWUJI-UHFFFAOYSA-N 0.000 description 1
- AKYFJADNRLTBGV-UHFFFAOYSA-N pyridine;thiadiazole Chemical class C1=CSN=N1.C1=CC=NC=C1 AKYFJADNRLTBGV-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 125000006413 ring segment Chemical group 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 150000003967 siloles Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000005579 tetracene group Polymers 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 125000005580 triphenylene group Polymers 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
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- Chemical & Material Sciences (AREA)
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- Optics & Photonics (AREA)
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Description
したがって、本発明の目的は、改善された効率及び発光安定性(luminance stability)をもつOLED装置を提供することにある。
(a)アノードと、
(b)カソードと、
(c)前記アノードと前記カソードとの間に配置される少なくとも2つのエレクトロルミネッセンスユニットであって、各エレクトロルミネッセンスユニットが、少なくとも1つの正孔輸送層及び1つの有機発光層を含むエレクトロルミネッセンスユニットと、
(d)隣接するエレクトロルミネッセンスユニットの間に配置される中間接続層であって、前記中間接続層がn−ドープ有機層及び電子受容層を含み、前記電子受容層がn−ドープ有機層よりも前記カソードに近接して配置され、前記n−ドープ有機層がアルカリ金属及び有機アルカリ金属錯体を含む中間接続層と
を含むタンデム式OLED装置によって達成される。
A (Li+)m(Q)n
(式中、Qはアニオン性有機配位子であり、m及びnは、錯体に中性電荷を与えるように独立的に選択された整数である。)による有機リチウム化合物を含む。
各Aは水素又は置換基を表し、各Bは水素、又はZ原子上の独立して選択された置換基を表し、ただし、2つ以上の置換基は結合して縮合環又は縮合環系を形成することができ、
jは0〜3であり、kは1又は2であり、
m及びnは、錯体に中性電荷を与えるように独立して選択された整数である。
CO−1:アルミニウムトリソキシン[別名:トリス(8−キノリノラト)アルミニウム(III)]、
CO−2:マグネシウムビオキシン[別名:ビス(8−キノリノラト)マグネシウム(II)]、
CO−3:ビス[ベンゾ{f}−8−キノリノラト]亜鉛(II)、
CO−4:ビス(2−メチル−8−キノリノラト)アルミニウム(III)−μ−オキソ−ビス(2−メチル−8−キノリノラト)アルミニウム(III)、
CO−5:インジウムトリソキシン[別名:トリス(8−キノリノラト)インジウム]、
CO−6:アルミニウムトリス(5−メチルオキシン)[別名:トリス(5−メチル−8−キノリノラト)アルミニウム(III)]、
CO−7:リチウムオキシン[別名:(8−キノリノラト)リチウム(I)]、
CO−8:ガリウムオキシン[別名:トリス(8−キノリノラト)ガリウム(III)]、及び
CO−9:ジルコニウムオキシン[別名:テトラ(8−キノリノラト)ジルコニウム(IV)]
第1群:水素、又は1〜24個の炭素原子を有するアルキル
第2群:5〜20個の炭素原子を有するアリール又は置換アリール
第3群:アントラセニル、ピレニル又はペリレニルの縮合芳香環を完成するのに必要な4〜24個の炭素原子
第4群:フリル、チエニル、ピリジル、キノリニル又は他の複素環系の縮合芳香族複素環を完成するのに必要な5〜24個の炭素原子を有するヘテロアリール又は置換ヘテロアリール
第5群:1〜24個の炭素原子を有するアルコキシルアミノ、アルキルアミノ又はアリールアミノ
第6群:フッ素又はシアノ
第1群:水素、又は1〜24個の炭素原子を有するアルキル
第2群:5〜20個の炭素原子を有するアリール又は置換アリール
第3群:縮合芳香環又は環系を完成する、4〜24個の炭素原子を含有する炭化水素
第4群:単結合を介して結合されるか、又は縮合芳香族複素環を完成する、チアゾリル、フリル、チエニル、ピリジル、キノリニル又は他の複素環系などの5〜24個の炭素原子を有するヘテロアリール又は置換へテロアリール
第5群:1〜24個の炭素原子を有するアルコキシルアミノ、アルキルアミノ又はアリールアミノ
第6群:フルオロ又はシアノ
1.きれいなガラス基板にインジウムスズ酸化物(ITO)をスパッタリングにより堆積させ、60nmの厚さの透明電極を形成した。
2.上記で調製したITO表面を酸素プラズマエッチングで処理した。
3.上記で調製した基板を、正孔注入層(HIL)としてヘキサシアノヘキサアザトリフェニレン(CHATP)の10nm層を真空蒸着することによってさらに処理した。
5.上記で調製した基板を、48%のNPB(ホストとして)、48%の9−(1−ナフチル)−10−(2−ナフチル)アントラセン(NNA)(共同ホストとして)、4%の黄色発光ドーパントであるジフェニルテトラ−t−ブチルルブレン(PTBR)含む20nmの黄色発光層を真空蒸着することによってさらに処理した。
8.上記で調製した基板を、電子受容層としてCHATPの10nm層を真空蒸着することによってさらに処理した。
9.上記で調製した基板を、正孔輸送層(HTL)としてNPBの10nm層を真空蒸着することによってさらに処理した。
10.上記で調製した基板を、94.5%のNPB、黄色発光ドーパントとして5%のPTBR、及び赤色発光ドーパントとして0.5%のジベンゾ{[f,f’]−4,4’,7,7’−テトラフェニル]ジインデノ−[1,2,3−cd:1’,2’,3’−lm]ペリレン(TPDBP)を含む20nmの赤色発光層を真空蒸着することによってさらに処理した。
12.上記で調製した基板を、99%のPBNA、青色発光ドーパントとして1%のBEPを含む20nmの青色発光層を真空蒸着することによってさらに処理した。
13.共同ホストとして49%のBphen及び49%のALQ、2%のLi金属を含む35nmの混合電子輸送層を真空蒸着した。
14.基板上に100nmのアルミニウム層を蒸発によって堆積させ、カソード層を形成した。
工程7を以下のようにしたこと以外は、実施例1で上記した通りにしてOLED装置を作製した。
7.ホストとして98%のBphen、2%のLi金属を含む40nmのnドープ有機層を真空蒸着した。
工程7を以下のようにしたこと以外は、実施例1で上記した通りにしてOLED装置を作製した。
7.ホストとして98%の2−(2−ヒドロキシフェニル)−1,10−フェナントロリンのリチウム塩(Li−HPP)、2%のLi金属を含む40nmのnドープ有機層を真空蒸着した。
工程7を以下のようにしたこと以外は、実施例1で上記した通りにしてOLED装置を作製した。
7.49%のLi−HPP、共同ホストとして49%のALQ、2%のLi金属を含む40nmのnドープ有機層を真空蒸着した。
以下の工程6aを工程6の後に加え、工程7を以下のようにしたこと以外は、実施例1で上記した通りにしてOLED装置を作製した。
6a.上記で調製した基板を、30nmのPBNAの非ドープ層を真空蒸着することによってさらに処理した。
7.ホストとして98%のLi−HPP、2%のLi金属を含む10nmのnドープ有機層を真空蒸着した。
以下の工程6aを工程6の後に加え、工程7を以下のようにしたこと以外は、実施例1で上記した通りにしてOLED装置を作製した。
6a.上記で調製した基板を、50%のPBNA及び50%の8−キノリノラトリチウム(LiQ)の20nmの非ドープ層を真空蒸着することによってさらに処理した。
7.ホストとして98%のLi−HPP、2%のLi金属を含む20nmのnドープ有機層を真空蒸着した。
15 OLED装置
20 基板
30 アノード
35 正孔注入層
38 電子受容層
40 正孔輸送層
45 正孔輸送層
50y 黄色発光層
50b 青色発光層
51r 赤色発光層
51g 緑色発光層
51b 青色発光層
55 電子輸送層
65 非ドープ層
70 ルミネッセンスユニット
75 ルミネッセンスユニット
80 中間接続層
85 中間接続層
90 カソード
95 nドープ有機層
Claims (10)
- (a)アノードと、
(b)カソードと、
(c)前記アノードと前記カソードとの間に配置される少なくとも2つのエレクトロルミネッセンスユニットであって、各エレクトロルミネッセンスユニットが、少なくとも1つの正孔輸送層及び1つの有機発光層を含むエレクトロルミネッセンスユニットと、
(d)隣接するエレクトロルミネッセンスユニットの間に配置される中間接続層であって、前記中間接続層がn−ドープ有機層及び電子受容層を含み、前記電子受容層がn−ドープ有機層よりも前記カソードに近接して配置され、前記n−ドープ有機層がアルカリ金属及び有機アルカリ金属錯体を含み、且つ前記中間接続層が、前記アノードに近接する側に前記n−ドープ層と接触する非ドープ層をさらに含む中間接続層と
を含むタンデム式OLED装置。 - 前記有機アルカリ金属錯体はフェナントロリン誘導体を含む請求項1に記載のタンデム式OLED装置。
- 前記アルカリ金属はリチウムである請求項2に記載のタンデム式OLED装置。
- 前記有機アルカリ金属錯体はリチウムを含む請求項3に記載のタンデム式OLED装置。
- 前記n−ドープ有機層は非荷電フェナントロリン誘導体をさらに含む請求項4に記載のタンデム式OLED装置。
- 前記非ドープ層はアントラセン誘導体を含む請求項1に記載のタンデム式OLED装置。
- 前記非ドープ層は有機アルカリ金属錯体をさらに含む請求項7に記載のタンデム式OLED装置。
- 前記非ドープ層中の前記有機アルカリ金属錯体は、ヒドロキノリンの塩である請求項8に記載のタンデム式OLED装置。
- 前記電子受容層はヘキサアザトリフェニレン誘導体を含む請求項1に記載のタンデム式OLED装置。
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US12/022,427 | 2008-01-30 | ||
US12/022,427 US7955719B2 (en) | 2008-01-30 | 2008-01-30 | Tandem OLED device with intermediate connector |
PCT/US2009/000292 WO2009097084A1 (en) | 2008-01-30 | 2009-01-19 | Tandem oled device with intermediate connector |
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EP (1) | EP2243176B1 (ja) |
JP (1) | JP5113913B2 (ja) |
KR (1) | KR101225674B1 (ja) |
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US8115382B2 (en) * | 2007-09-20 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device, comprising controlled carrier transport |
US8637854B2 (en) * | 2008-05-16 | 2014-01-28 | Lg Chem, Ltd. | Stacked organic light emitting diode |
KR101841892B1 (ko) * | 2008-10-28 | 2018-03-23 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 별개의 적색, 녹색 및 청색 서브엘리먼트를 갖는 적층형 백색 oled |
KR100994118B1 (ko) * | 2009-01-13 | 2010-11-15 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 및 그 제조 방법 |
JP2010225563A (ja) * | 2009-03-25 | 2010-10-07 | Panasonic Electric Works Co Ltd | 有機el素子 |
EP2440015B1 (en) | 2009-06-05 | 2017-11-15 | Beijing Visionox Technology Co., Ltd. | Organic electroluminescence device and testing method thereof |
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EP2243176B1 (en) | 2011-08-24 |
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WO2009097084A1 (en) | 2009-08-06 |
KR101225674B1 (ko) | 2013-01-23 |
CN101960632A (zh) | 2011-01-26 |
ATE521997T1 (de) | 2011-09-15 |
EP2243176A1 (en) | 2010-10-27 |
US7955719B2 (en) | 2011-06-07 |
JP2011511414A (ja) | 2011-04-07 |
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