JP5105776B2 - 液晶表示装置用薄膜トランジスター素子の製造方法 - Google Patents
液晶表示装置用薄膜トランジスター素子の製造方法 Download PDFInfo
- Publication number
- JP5105776B2 JP5105776B2 JP2006161999A JP2006161999A JP5105776B2 JP 5105776 B2 JP5105776 B2 JP 5105776B2 JP 2006161999 A JP2006161999 A JP 2006161999A JP 2006161999 A JP2006161999 A JP 2006161999A JP 5105776 B2 JP5105776 B2 JP 5105776B2
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- Prior art keywords
- liquid crystal
- crystal display
- film transistor
- glass composition
- thin film
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 60
- 239000010409 thin film Substances 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 238000000034 method Methods 0.000 title description 42
- 239000011521 glass Substances 0.000 claims description 86
- 239000000203 mixture Substances 0.000 claims description 60
- 239000010408 film Substances 0.000 claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 claims description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 230000008569 process Effects 0.000 description 30
- 239000010410 layer Substances 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 238000005245 sintering Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 10
- 239000000945 filler Substances 0.000 description 10
- 238000007639 printing Methods 0.000 description 9
- 238000010304 firing Methods 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000282412 Homo Species 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Description
Claims (1)
- 透明絶縁基板上にゲート電極を形成する段階と、
前記ゲート電極を覆う領域にガラス組成物でゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜上に半導体層を形成する段階と、
前記ゲート電極と対応する領域で前記半導体層を露出させて、前記半導体層上に互いに離隔されるように位置するソース電極及びドレイン電極を形成する段階と、
前記ソース電極、前記ドレイン電極及び前記半導体層上に、前記ガラス組成物で無機保護膜を形成する段階とを含み、
前記ガラス組成物はSb2O3、B2O3、SiO2及びAl2O3を含み、前記Sb2O3の含量は50mol%以下であり、前記B2O3の含量は50mol%以下であり、前記SiO2の含量は10mol%以下であることを特徴とする液晶表示装置用薄膜トランジスター素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050057445A KR101169049B1 (ko) | 2005-06-30 | 2005-06-30 | 액정 표시 장치용 박막 트랜지스터 소자 및 그의 제조 방법 |
KR10-2005-0057445 | 2005-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007013137A JP2007013137A (ja) | 2007-01-18 |
JP5105776B2 true JP5105776B2 (ja) | 2012-12-26 |
Family
ID=37588431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006161999A Active JP5105776B2 (ja) | 2005-06-30 | 2006-06-12 | 液晶表示装置用薄膜トランジスター素子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070001242A1 (ja) |
JP (1) | JP5105776B2 (ja) |
KR (1) | KR101169049B1 (ja) |
CN (1) | CN100412668C (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9062853B2 (en) * | 2010-07-12 | 2015-06-23 | National University Corporation Nagoya University | Broadband infrared light emitting device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6060944A (ja) * | 1983-09-08 | 1985-04-08 | Nippon Electric Glass Co Ltd | 半導体被覆用ガラス |
TW223178B (en) * | 1992-03-27 | 1994-05-01 | Semiconductor Energy Res Co Ltd | Semiconductor device and its production method |
US5252521A (en) * | 1992-10-19 | 1993-10-12 | Ferro Corporation | Bismuth-containing lead-free glass enamels and glazes of low silica content |
US5706064A (en) * | 1995-03-31 | 1998-01-06 | Kabushiki Kaisha Toshiba | LCD having an organic-inorganic hybrid glass functional layer |
JPH0936371A (ja) * | 1995-07-19 | 1997-02-07 | Toshiba Electron Eng Corp | 薄膜トランジスタの製造方法 |
JP3240271B2 (ja) * | 1996-02-29 | 2001-12-17 | ティーディーケイ株式会社 | セラミック基板 |
EP0844670B1 (en) * | 1996-06-06 | 2004-01-02 | Seiko Epson Corporation | Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method |
JP3993301B2 (ja) * | 1997-12-16 | 2007-10-17 | 株式会社住田光学ガラス | 長残光および輝尽発光を呈する酸化物ガラス |
EP0957502B1 (en) * | 1998-05-12 | 2007-04-25 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of plasma display panel |
CN1183497C (zh) * | 2000-03-31 | 2005-01-05 | 松下电器产业株式会社 | 显示板及其制造方法 |
JP2003267753A (ja) * | 2000-10-11 | 2003-09-25 | Paramount Glass Kogyo Kk | 無機質繊維製造用硝子組成物及びその成型物 |
KR100776509B1 (ko) * | 2000-12-30 | 2007-11-16 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
JP2003347567A (ja) * | 2002-05-23 | 2003-12-05 | Sharp Corp | 半導体デバイスおよびその製造方法 |
WO2005007591A1 (ja) * | 2003-07-18 | 2005-01-27 | Asahi Glass Company, Limited | 無鉛ガラス、電極被覆用ガラス粉末およびプラズマディスプレイ装置 |
-
2005
- 2005-06-30 KR KR1020050057445A patent/KR101169049B1/ko active IP Right Grant
-
2006
- 2006-06-12 JP JP2006161999A patent/JP5105776B2/ja active Active
- 2006-06-12 CN CNB2006100915608A patent/CN100412668C/zh active Active
- 2006-06-14 US US11/452,357 patent/US20070001242A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR101169049B1 (ko) | 2012-07-26 |
US20070001242A1 (en) | 2007-01-04 |
JP2007013137A (ja) | 2007-01-18 |
CN1892383A (zh) | 2007-01-10 |
CN100412668C (zh) | 2008-08-20 |
KR20070002121A (ko) | 2007-01-05 |
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