JP5090929B2 - 高性能ｍｅｍｓ実装アーキテクチャ - Google Patents

高性能ｍｅｍｓ実装アーキテクチャ Download PDF

Info

Publication number
JP5090929B2
JP5090929B2 JP2007552187A JP2007552187A JP5090929B2 JP 5090929 B2 JP5090929 B2 JP 5090929B2 JP 2007552187 A JP2007552187 A JP 2007552187A JP 2007552187 A JP2007552187 A JP 2007552187A JP 5090929 B2 JP5090929 B2 JP 5090929B2
Authority
JP
Japan
Prior art keywords
cover plate
anchor
layer
active layer
features
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007552187A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008528968A (ja
JP2008528968A5 (enExample
Inventor
ラフォンド，ピーター・エイチ
リャンチョン，ユ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2008528968A publication Critical patent/JP2008528968A/ja
Publication of JP2008528968A5 publication Critical patent/JP2008528968A5/ja
Application granted granted Critical
Publication of JP5090929B2 publication Critical patent/JP5090929B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Gyroscopes (AREA)
JP2007552187A 2005-01-21 2006-01-12 高性能ｍｅｍｓ実装アーキテクチャ Expired - Fee Related JP5090929B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/040,208 2005-01-21
US11/040,208 US7238999B2 (en) 2005-01-21 2005-01-21 High performance MEMS packaging architecture
PCT/US2006/001276 WO2006078564A1 (en) 2005-01-21 2006-01-12 High performance mems packaging archetecture

Publications (3)

Publication Number Publication Date
JP2008528968A JP2008528968A (ja) 2008-07-31
JP2008528968A5 JP2008528968A5 (enExample) 2012-03-29
JP5090929B2 true JP5090929B2 (ja) 2012-12-05

Family

ID=36297244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007552187A Expired - Fee Related JP5090929B2 (ja) 2005-01-21 2006-01-12 高性能ｍｅｍｓ実装アーキテクチャ

Country Status (4)

Country Link
US (1) US7238999B2 (enExample)
EP (1) EP1853928A1 (enExample)
JP (1) JP5090929B2 (enExample)
WO (1) WO2006078564A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11656079B2 (en) 2021-02-26 2023-05-23 Kabushiki Kaisha Toshiba Sensor and electronic device

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7495462B2 (en) * 2005-03-24 2009-02-24 Memsic, Inc. Method of wafer-level packaging using low-aspect ratio through-wafer holes
US7371676B2 (en) 2005-04-08 2008-05-13 Micron Technology, Inc. Method for fabricating semiconductor components with through wire interconnects
US7611919B2 (en) * 2005-04-21 2009-11-03 Hewlett-Packard Development Company, L.P. Bonding interface for micro-device packaging
US7393770B2 (en) * 2005-05-19 2008-07-01 Micron Technology, Inc. Backside method for fabricating semiconductor components with conductive interconnects
US7307348B2 (en) * 2005-12-07 2007-12-11 Micron Technology, Inc. Semiconductor components having through wire interconnects (TWI)
US7449765B2 (en) * 2006-02-27 2008-11-11 Texas Instruments Incorporated Semiconductor device and method of fabrication
US20070243662A1 (en) * 2006-03-17 2007-10-18 Johnson Donald W Packaging of MEMS devices
US20070246665A1 (en) * 2006-04-20 2007-10-25 Lafond Peter H Mechanical isolation for mems devices
US7659612B2 (en) 2006-04-24 2010-02-09 Micron Technology, Inc. Semiconductor components having encapsulated through wire interconnects (TWI)
US7615863B2 (en) * 2006-06-19 2009-11-10 Northrop Grumman Space & Missions Systems Corp. Multi-dimensional wafer-level integrated antenna sensor micro packaging
US7690255B2 (en) * 2006-08-31 2010-04-06 Evigia Systems, Inc. Three-axis inertial sensor and method of forming
CN100492016C (zh) * 2006-11-17 2009-05-27 中国科学院上海微系统与信息技术研究所 微机械电容式加速度传感器及制作方法
US7531443B2 (en) * 2006-12-08 2009-05-12 Micron Technology, Inc. Method and system for fabricating semiconductor components with through interconnects and back side redistribution conductors
US20090085194A1 (en) * 2007-09-28 2009-04-02 Honeywell International Inc. Wafer level packaged mems device
US7971483B2 (en) * 2008-03-28 2011-07-05 Honeywell International Inc. Systems and methods for acceleration and rotational determination from an out-of-plane MEMS device
US7984648B2 (en) 2008-04-10 2011-07-26 Honeywell International Inc. Systems and methods for acceleration and rotational determination from an in-plane and out-of-plane MEMS device
JP5062146B2 (ja) * 2008-11-21 2012-10-31 大日本印刷株式会社 物理量センサおよびその製造方法、ならびに電子機器
JP4924663B2 (ja) * 2008-12-25 2012-04-25 株式会社デンソー 半導体装置およびその製造方法
WO2010104064A1 (ja) * 2009-03-13 2010-09-16 アルプス電気株式会社 Ｍｅｍｓセンサ
US8215169B2 (en) 2009-03-26 2012-07-10 Honeywell International Inc. Using pole pieces to guide magnetic flux through a MEMS device and method of making
US8115573B2 (en) * 2009-05-29 2012-02-14 Infineon Technologies Ag Resonance frequency tunable MEMS device
US20100314149A1 (en) 2009-06-10 2010-12-16 Medtronic, Inc. Hermetically-sealed electrical circuit apparatus
US8172760B2 (en) 2009-06-18 2012-05-08 Medtronic, Inc. Medical device encapsulated within bonded dies
EP2464981B1 (en) * 2009-08-13 2017-06-28 Meggitt (Orange County), Inc. Proof mass for maximized, bi-directional and symmetric damping in high g-range acceleration sensors
JP5640379B2 (ja) * 2009-12-28 2014-12-17 ソニー株式会社 半導体装置の製造方法
US8666505B2 (en) 2010-10-26 2014-03-04 Medtronic, Inc. Wafer-scale package including power source
US8569090B2 (en) * 2010-12-03 2013-10-29 Babak Taheri Wafer level structures and methods for fabricating and packaging MEMS
US8424388B2 (en) 2011-01-28 2013-04-23 Medtronic, Inc. Implantable capacitive pressure sensor apparatus and methods regarding same
US20130001710A1 (en) * 2011-06-29 2013-01-03 Invensense, Inc. Process for a sealed mems device with a portion exposed to the environment
JP2013171009A (ja) * 2012-02-23 2013-09-02 Hitachi Automotive Systems Ltd 慣性力センサ
JP5864332B2 (ja) 2012-03-29 2016-02-17 曙ブレーキ工業株式会社 静電容量型加速度センサの製造方法、製造装置および静電容量型加速度センサ
US20140151721A1 (en) * 2012-11-30 2014-06-05 Corning Incorporated Phase transition cooling in led lighting devices
US9394164B2 (en) * 2013-03-12 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS method and structure
EP3019442A4 (en) 2013-07-08 2017-01-25 Motion Engine Inc. Mems device and method of manufacturing
WO2015042700A1 (en) 2013-09-24 2015-04-02 Motion Engine Inc. Mems components and method of wafer-level manufacturing thereof
EP3028007A4 (en) 2013-08-02 2017-07-12 Motion Engine Inc. Mems motion sensor and method of manufacturing
US9725310B2 (en) 2013-12-20 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Micro electromechanical system sensor and method of forming the same
JP6590812B2 (ja) 2014-01-09 2019-10-16 モーション・エンジン・インコーポレーテッド 集積ｍｅｍｓシステム
JP5827365B2 (ja) * 2014-04-09 2015-12-02 ハネウェル・インターナショナル・インコーポレーテッド ウェーハレベルでパッケージングされたデバイスを形成する方法
US20170030788A1 (en) 2014-04-10 2017-02-02 Motion Engine Inc. Mems pressure sensor
WO2015184531A1 (en) 2014-06-02 2015-12-10 Motion Engine Inc. Multi-mass mems motion sensor
DE102014210986A1 (de) * 2014-06-10 2015-12-17 Robert Bosch Gmbh Mikromechanische Schichtenanordnung
CA3004760A1 (en) 2014-12-09 2016-06-16 Motion Engine Inc. 3d mems magnetometer and associated methods
GB201423311D0 (en) 2014-12-29 2015-02-11 Pilkington Group Ltd Switchable device
CA3004763A1 (en) 2015-01-15 2016-07-21 Motion Engine Inc. 3d mems device with hermetic cavity
WO2017104103A1 (ja) * 2015-12-17 2017-06-22 パナソニックＩｐマネジメント株式会社 接続構造体
US10330696B2 (en) * 2016-03-24 2019-06-25 Northrop Grumman Systems Corporation Accelerometer sensor system
US10473920B2 (en) * 2016-08-24 2019-11-12 Stmicroelectronics S.R.L. Hermetically sealed MEMS mirror and method of manufacture
US10121742B2 (en) * 2017-03-15 2018-11-06 Amkor Technology, Inc. Method of forming a packaged semiconductor device using ganged conductive connective assembly and structure
US10446550B2 (en) * 2017-10-13 2019-10-15 Globalfoundries Inc. Cut inside replacement metal gate trench to mitigate N-P proximity effect
JP7524068B2 (ja) * 2018-04-03 2024-07-29 ラム リサーチ コーポレーション Ｍｅｍｓコリオリ・ガス流量制御器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2687777B1 (fr) * 1992-02-20 1994-05-20 Sextant Avionique Micro-capteur capacitif a faible capacite parasite et procede de fabrication.
FR2687778B1 (fr) * 1992-02-20 1994-05-20 Sextant Avionique Micro-capteur capacitif a capacite parasite reduite et procede de fabrication.
EP0623824B1 (de) * 1993-05-05 1996-11-06 LITEF GmbH Mikromechanische Beschleunigungsmessvorrichtung und Verfahren zu deren Herstellung
US5476819A (en) * 1993-07-26 1995-12-19 Litton Systems, Inc. Substrate anchor for undercut silicon on insulator microstructures
US6105427A (en) * 1998-07-31 2000-08-22 Litton Systems, Inc. Micro-mechanical semiconductor accelerometer
KR100276429B1 (ko) * 1998-09-07 2000-12-15 정선종 미소 진공 구조체의 제작방법
US6308569B1 (en) * 1999-07-30 2001-10-30 Litton Systems, Inc. Micro-mechanical inertial sensors
JP3771100B2 (ja) * 2000-01-19 2006-04-26 アルプス電気株式会社 静電容量検出型センサおよびジャイロスコープならびに入力装置
FR2834282B1 (fr) * 2001-12-28 2004-02-27 Commissariat Energie Atomique Procede de renforcement d'une microstructure mecanique
KR20030077754A (ko) * 2002-03-27 2003-10-04 삼성전기주식회사 마이크로 관성센서 및 그 제조 방법
JP4238724B2 (ja) * 2003-03-27 2009-03-18 株式会社デンソー 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11656079B2 (en) 2021-02-26 2023-05-23 Kabushiki Kaisha Toshiba Sensor and electronic device

Also Published As

Publication number Publication date
EP1853928A1 (en) 2007-11-14
JP2008528968A (ja) 2008-07-31
US20060163679A1 (en) 2006-07-27
US7238999B2 (en) 2007-07-03
WO2006078564A1 (en) 2006-07-27

Similar Documents

Publication Publication Date Title
JP5090929B2 (ja) 高性能ｍｅｍｓ実装アーキテクチャ
JP5021312B2 (ja) 角速度センサ及びその製造方法
EP2414775B1 (en) Environmentally robust disc resonator gyroscope
US6939473B2 (en) Method of making an X-Y axis dual-mass tuning fork gyroscope with vertically integrated electronics and wafer-scale hermetic packaging
CN102356324B (zh) 垂直集成的mems加速度变换器
US8069726B2 (en) X-Y axis dual-mass tuning fork gyroscope with vertically integrated electronics and wafer-scale hermetic packaging
US7104129B2 (en) Vertically integrated MEMS structure with electronics in a hermetically sealed cavity
KR101105059B1 (ko) 수직으로 집적화된 일렉트로닉스 및 웨이퍼 스케일 밀봉패키징을 갖는 ｘ―ｙ축 듀얼 매스 튜닝 포크자이로스코프를 제조 방법
JP2007509346A5 (enExample)
CN101939653B (zh) 具有垂直集成的电子器件和晶片级密封式封装的x-y轴双质量块音叉陀螺仪
US20180074090A1 (en) Multiple degree of freedom mems sensor chip and method for fabricating the same
US7770451B2 (en) Angular velocity detecting device
US8847337B2 (en) Processes and mounting fixtures for fabricating electromechanical devices and devices formed therewith
JP5048344B2 (ja) 分離応力アイソレータ
US9731958B2 (en) Microelectromechanical system and fabricating process having decoupling structure that includes attaching element for fastening to carrier
US20240253979A1 (en) Stress isolation process

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080926

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20110913

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111007

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120106

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120116

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20120207

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120815

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120913

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150921

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees