JP5090622B2 - 冷却エレメントを備えた半導体装置 - Google Patents
冷却エレメントを備えた半導体装置 Download PDFInfo
- Publication number
- JP5090622B2 JP5090622B2 JP2004528304A JP2004528304A JP5090622B2 JP 5090622 B2 JP5090622 B2 JP 5090622B2 JP 2004528304 A JP2004528304 A JP 2004528304A JP 2004528304 A JP2004528304 A JP 2004528304A JP 5090622 B2 JP5090622 B2 JP 5090622B2
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- power laser
- diode bar
- semiconductor device
- intermediate support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
- H01S5/02484—Sapphire or diamond heat spreaders
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (11)
- 半導体装置であって、
−パワーレーザダイオードバー(12)が半導体構成素子として設けられており、前記パワーレーザダイオードバー(12)が、冷却エレメント(20)上に配置されており、
−この場合、冷却エレメント(20)が互いに上下にスタッキングされかつ扁平に互いに結合された複数の層から成っており、該複数の層のうちの一部が、冷却エレメント(20)の内部に冷却媒体を案内するための冷却通路(26)を形成するために構造化されており、該冷却通路(26)が、少なくとも1つの領域(32)に、冷却媒体への有効な熱移行のためのマイクロ構造部を有しており、
−パワーレーザダイオードバー(12)が完全に、冷却通路(26)の、マイクロ構造部を有している領域(32)と重なっており、パワーレーザダイオードバー(12)と冷却エレメント(20)との間に中間支持体(16)が配置されており、該中間支持体(16)が、パワーレーザダイオードバー(12)および冷却エレメント(20)の異なる熱膨張に基づいて発生する、パワーレーザダイオードバー(12)と冷却エレメント(20)との間の機械的な応力を弾性の伸び範囲内で受容する高さの弾性係数を有しているように整備されていてかつ設計されている半導体装置において、
冷却エレメント(20)の同一の表面へ、パワーレーザダイオードバー(12)と、ビーム視準装置(40)とが配置されていることを特徴とする、冷却エレメントを備えた半導体装置。 - 中間支持体(16)が、銅よりも高い熱伝導率を有している、請求項1記載の半導体装置。
- 中間支持体(16)の熱膨張係数が、パワーレーザダイオードバー(12)の熱膨張係数に相当する、請求項1又は2記載の半導体装置。
- パワーレーザダイオードバー(12)が、硬ろう(14)によって中間支持体(16)に結合されている、請求項1から3までのいずれか1項記載の半導体装置。
- 中間支持体(16)が、硬ろう(18)によって冷却エレメント(20)に結合されている、請求項1から4までのいずれか1項記載の半導体装置。
- 硬ろう(14,18)として、AuSnろうをベースとするろうが使用されている、請求項4または5記載の半導体装置。
- 中間支持体(16)が、モリブデンもしくはタングステン、または銅・モリブデン合金もしくは銅・タングステン合金から製作されている、請求項1から6までのいずれか1項記載の半導体装置。
- 中間支持体(16)が、ダイヤモンド金属複合材料を有している、請求項1から7までのいずれか1項記載の半導体装置。
- 冷却エレメント(20)の層が、構造化された銅箔によって形成されている、請求項1から8までのいずれか1項記載の半導体装置。
- マイクロ構造化された領域(32)の長さが、少なくともパワーレーザダイオードバー(12)の長さと同じであるかまたはパワーレーザダイオードバー(12)の長さよりも大きく、マイクロ構造化された領域(32)が、長さの方向でパワーレーザダイオードバー(12)と完全に重なっている、請求項1から9までのいずれか1項記載の半導体装置。
- マイクロ構造化された領域(32)の幅が、パワーレーザダイオードバー(12)の幅と同じであるかまたはパワーレーザダイオードバー(12)の幅よりも大きく、マイクロ構造化された領域(32)が、幅の方向で完全にパワーレーザダイオードバー(12)と重なっている、請求項1から10までのいずれか1項記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10234704A DE10234704A1 (de) | 2002-07-30 | 2002-07-30 | Halbleitervorrichtung mit Kühlelement |
DE10234704.2 | 2002-07-30 | ||
PCT/DE2003/001906 WO2004017476A2 (de) | 2002-07-30 | 2003-06-10 | Halbleitervorrichtung mit kühlelement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005535142A JP2005535142A (ja) | 2005-11-17 |
JP5090622B2 true JP5090622B2 (ja) | 2012-12-05 |
Family
ID=7714807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004528304A Expired - Fee Related JP5090622B2 (ja) | 2002-07-30 | 2003-06-10 | 冷却エレメントを備えた半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7567597B2 (ja) |
EP (1) | EP1525618B1 (ja) |
JP (1) | JP5090622B2 (ja) |
CH (1) | CH696412A5 (ja) |
DE (2) | DE10234704A1 (ja) |
WO (1) | WO2004017476A2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004004097A1 (de) * | 2003-11-28 | 2005-06-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer Wärmesenke |
DE102005019115B4 (de) * | 2005-01-24 | 2010-04-08 | Osram Opto Semiconductors Gmbh | Halbleiterlaserbauelement |
DE102007030389B4 (de) * | 2007-03-30 | 2015-08-13 | Rogers Germany Gmbh | Moduleinheit mit einer Wärmesenke |
US8804781B2 (en) * | 2012-10-29 | 2014-08-12 | Coherent, Inc. | Macro channel water-cooled heat-sink for diode-laser bars |
US8804782B2 (en) | 2012-10-29 | 2014-08-12 | Coherent, Inc. | Macro-channel water-cooled heat-sink for diode-laser bars |
JP5764152B2 (ja) * | 2013-02-13 | 2015-08-12 | 株式会社フジクラ | 半導体レーザ装置 |
KR20160139028A (ko) * | 2014-03-31 | 2016-12-06 | 아이피지 포토닉스 코포레이션 | 고전력 레이저 다이오드 패키징 방법 및 레이저 다이오드 모듈 |
WO2016023112A1 (en) * | 2014-08-11 | 2016-02-18 | Best Theratronics Ltd. | System and method for metallic isotope separation by a combined thermal-vacuum distillation process |
DE102017122575B3 (de) | 2017-09-28 | 2019-02-28 | Rogers Germany Gmbh | Kühlvorrichtung zum Kühlen eines elektrischen Bauteils und Verfahren zur Herstellung einer Kühlvorrichtung |
EP4250340A1 (de) * | 2022-03-24 | 2023-09-27 | Siemens Aktiengesellschaft | Verfahren zum herstellen einer vorrichtung zur kühlung einer halbleiteranordnung mit einem metallischen körper |
CN114583532B (zh) * | 2022-05-05 | 2022-08-05 | 中国工程物理研究院应用电子学研究所 | 一种薄片激光晶体冷却装置及激光器 |
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US4525178A (en) * | 1984-04-16 | 1985-06-25 | Megadiamond Industries, Inc. | Composite polycrystalline diamond |
FR2616272B1 (fr) * | 1987-06-02 | 1990-10-26 | Thomson Csf | Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation |
US5105429A (en) * | 1990-07-06 | 1992-04-14 | The United States Of America As Represented By The Department Of Energy | Modular package for cooling a laser diode array |
JPH05502980A (ja) * | 1990-10-01 | 1993-05-20 | アメリカ合衆国 | 円柱レンズを有するダイオードレーザ組立体 |
US5105430A (en) * | 1991-04-09 | 1992-04-14 | The United States Of America As Represented By The United States Department Of Energy | Thin planar package for cooling an array of edge-emitting laser diodes |
EP0509825A3 (en) | 1991-04-16 | 1993-11-24 | Nec Corp | Package structure for semiconductor device |
JPH0574985A (ja) * | 1991-04-16 | 1993-03-26 | Nec Corp | 半導体素子の実装構造 |
US5373731A (en) * | 1992-07-01 | 1994-12-20 | Sumitomo Electric Industries, Ltd. | Bonding tool, production and handling thereof |
DE4315580A1 (de) | 1993-05-11 | 1994-11-17 | Fraunhofer Ges Forschung | Anordnung aus Laserdioden und einem Kühlsystem sowie Verfahren zu deren Herstellung |
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US6264882B1 (en) * | 1994-05-20 | 2001-07-24 | The Regents Of The University Of California | Process for fabricating composite material having high thermal conductivity |
DE19506093C2 (de) | 1995-02-22 | 2000-12-07 | Dilas Diodenlaser Gmbh | Diodenlaserbauelement |
DE19536463C2 (de) * | 1995-09-29 | 2002-02-07 | Infineon Technologies Ag | Verfahren zum Herstellen einer Mehrzahl von Laserdiodenbauelementen |
EP0771604A1 (fr) * | 1995-10-27 | 1997-05-07 | Arnold Neracher | Dispositif de soudage |
DE19605302A1 (de) | 1996-02-14 | 1997-08-21 | Fraunhofer Ges Forschung | Kühlkörper mit einer Montagefläche für ein elektronisches Bauteil |
DE19611046A1 (de) | 1996-03-20 | 1997-09-25 | Siemens Ag | Halbleitervorrichtung |
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DE19820355A1 (de) | 1998-05-07 | 1998-10-15 | Dilas Diodenlaser Gmbh | Kühlelement für eine Laserdiode |
DE19821544A1 (de) | 1998-05-14 | 1999-12-16 | Jenoptik Jena Gmbh | Diodenlaserbauelement und Verfahren zu dessen Herstellung |
EP0985715B1 (en) * | 1998-09-01 | 2011-10-12 | Mitsubishi Chemical Corporation | Recording liquid, printed product and ink jet recording method |
DE19956565B4 (de) | 1999-11-24 | 2006-03-30 | Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH | Verfahren zum Herstellen einer Wärmesenke für elektrische Bauelemente |
JP2002232068A (ja) * | 2000-11-29 | 2002-08-16 | Mitsubishi Chemicals Corp | 半導体発光装置 |
CN1222092C (zh) * | 2000-11-29 | 2005-10-05 | 三菱化学株式会社 | 半导体发光器件 |
DE10061265A1 (de) | 2000-12-06 | 2002-06-27 | Jenoptik Jena Gmbh | Diodenlaseranordnung |
US6826916B2 (en) * | 2001-04-24 | 2004-12-07 | The Furukawa Electric Co., Ltd. | Laser module, Peltier module, and Peltier module integrated heat spreader |
US7000684B2 (en) * | 2002-11-01 | 2006-02-21 | Cooligy, Inc. | Method and apparatus for efficient vertical fluid delivery for cooling a heat producing device |
-
2002
- 2002-07-30 DE DE10234704A patent/DE10234704A1/de not_active Withdrawn
-
2003
- 2003-02-14 DE DE20302430U patent/DE20302430U1/de not_active Expired - Lifetime
- 2003-06-10 EP EP03740070A patent/EP1525618B1/de not_active Expired - Fee Related
- 2003-06-10 US US10/522,518 patent/US7567597B2/en not_active Expired - Fee Related
- 2003-06-10 CH CH00088/05A patent/CH696412A5/de not_active IP Right Cessation
- 2003-06-10 WO PCT/DE2003/001906 patent/WO2004017476A2/de active Application Filing
- 2003-06-10 JP JP2004528304A patent/JP5090622B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005535142A (ja) | 2005-11-17 |
WO2004017476A3 (de) | 2005-01-27 |
DE10234704A1 (de) | 2004-02-19 |
WO2004017476A2 (de) | 2004-02-26 |
EP1525618B1 (de) | 2012-08-15 |
US7567597B2 (en) | 2009-07-28 |
US20060145333A1 (en) | 2006-07-06 |
DE20302430U1 (de) | 2003-05-15 |
EP1525618A2 (de) | 2005-04-27 |
CH696412A5 (de) | 2007-05-31 |
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