JP5079540B2 - 形状可変ミラーの製造方法及び形状可変ミラー - Google Patents
形状可変ミラーの製造方法及び形状可変ミラー Download PDFInfo
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- JP5079540B2 JP5079540B2 JP2008038986A JP2008038986A JP5079540B2 JP 5079540 B2 JP5079540 B2 JP 5079540B2 JP 2008038986 A JP2008038986 A JP 2008038986A JP 2008038986 A JP2008038986 A JP 2008038986A JP 5079540 B2 JP5079540 B2 JP 5079540B2
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- Prior art keywords
- sacrificial layer
- mirror
- mirror surface
- piezoelectric
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims description 64
- 238000005530 etching Methods 0.000 claims description 30
- 230000001629 suppression Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 238000001312 dry etching Methods 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 58
- 239000010409 thin film Substances 0.000 description 28
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000004075 alteration Effects 0.000 description 5
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
Landscapes
- Optical Elements Other Than Lenses (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008038986A JP5079540B2 (ja) | 2008-02-20 | 2008-02-20 | 形状可変ミラーの製造方法及び形状可変ミラー |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008038986A JP5079540B2 (ja) | 2008-02-20 | 2008-02-20 | 形状可変ミラーの製造方法及び形状可変ミラー |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009198700A JP2009198700A (ja) | 2009-09-03 |
| JP2009198700A5 JP2009198700A5 (enrdf_load_stackoverflow) | 2011-04-07 |
| JP5079540B2 true JP5079540B2 (ja) | 2012-11-21 |
Family
ID=41142268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008038986A Expired - Fee Related JP5079540B2 (ja) | 2008-02-20 | 2008-02-20 | 形状可変ミラーの製造方法及び形状可変ミラー |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5079540B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5988592B2 (ja) | 2012-01-19 | 2016-09-07 | キヤノン株式会社 | 可動ミラー、波面補正デバイスおよび眼底検査装置 |
| JP2016194631A (ja) | 2015-04-01 | 2016-11-17 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、および電子機器 |
| JP6613593B2 (ja) | 2015-04-01 | 2019-12-04 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、および電子機器 |
| JP2016200834A (ja) * | 2016-08-10 | 2016-12-01 | キヤノン株式会社 | 可動ミラー |
| DE102022211639A1 (de) * | 2022-11-04 | 2024-05-08 | Carl Zeiss Smt Gmbh | Adaptiver Spiegel mit mechanischer Vermittlerschicht und mikrolithographische Projektionsbelichtunganlage |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3482048B2 (ja) * | 1995-09-20 | 2003-12-22 | 株式会社堀場製作所 | 薄膜赤外線センサ |
| JP2003067969A (ja) * | 2001-08-27 | 2003-03-07 | Olympus Optical Co Ltd | 光ピックアップ |
| JP3751937B2 (ja) * | 2002-12-06 | 2006-03-08 | 関西ティー・エル・オー株式会社 | アクチュエータおよびアクチュエータシステム |
| JP2004281742A (ja) * | 2003-03-17 | 2004-10-07 | Japan Science & Technology Agency | 半導体素子、半導体センサーおよび半導体記憶素子 |
| JP4487523B2 (ja) * | 2003-09-18 | 2010-06-23 | パナソニック株式会社 | 光学ピックアップ収差補正ミラー |
| JP2008097683A (ja) * | 2006-10-10 | 2008-04-24 | Funai Electric Co Ltd | 可変形ミラー及びそれを備えた光ピックアップ装置 |
-
2008
- 2008-02-20 JP JP2008038986A patent/JP5079540B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009198700A (ja) | 2009-09-03 |
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