JP5062947B2 - 大きな有機半導体結晶を有するデバイスおよび該デバイスを作製する方法 - Google Patents

大きな有機半導体結晶を有するデバイスおよび該デバイスを作製する方法 Download PDF

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JP5062947B2
JP5062947B2 JP2004196149A JP2004196149A JP5062947B2 JP 5062947 B2 JP5062947 B2 JP 5062947B2 JP 2004196149 A JP2004196149 A JP 2004196149A JP 2004196149 A JP2004196149 A JP 2004196149A JP 5062947 B2 JP5062947 B2 JP 5062947B2
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semiconductor
chain
bis
layer
dielectric layer
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JP2005142526A (ja
JP2005142526A5 (enExample
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ブロアー アッカーマン ハイルク
エダン カッツ ハワード
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アルカテル−ルーセント ユーエスエー インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2004196149A 2003-11-04 2004-07-02 大きな有機半導体結晶を有するデバイスおよび該デバイスを作製する方法 Expired - Fee Related JP5062947B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/701,183 US8450723B2 (en) 2003-11-04 2003-11-04 Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain
US10/701183 2003-11-04

Publications (3)

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JP2005142526A JP2005142526A (ja) 2005-06-02
JP2005142526A5 JP2005142526A5 (enExample) 2007-08-16
JP5062947B2 true JP5062947B2 (ja) 2012-10-31

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US (1) US8450723B2 (enExample)
JP (1) JP5062947B2 (enExample)

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JP2007115986A (ja) * 2005-10-21 2007-05-10 Sharp Corp 薄膜デバイス及びその製造方法
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US7666968B2 (en) * 2006-04-21 2010-02-23 3M Innovative Properties Company Acene-thiophene copolymers with silethynly groups
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
US9806132B2 (en) * 2013-11-22 2017-10-31 General Electric Company Organic X-ray detector with barrier layer

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US20050093031A1 (en) 2005-05-05
JP2005142526A (ja) 2005-06-02
US8450723B2 (en) 2013-05-28

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