JP5058529B2 - 高耐圧電界効果トランジスタの製造方法 - Google Patents
高耐圧電界効果トランジスタの製造方法 Download PDFInfo
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- JP5058529B2 JP5058529B2 JP2006222964A JP2006222964A JP5058529B2 JP 5058529 B2 JP5058529 B2 JP 5058529B2 JP 2006222964 A JP2006222964 A JP 2006222964A JP 2006222964 A JP2006222964 A JP 2006222964A JP 5058529 B2 JP5058529 B2 JP 5058529B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 230000005669 field effect Effects 0.000 title claims description 10
- 230000015556 catabolic process Effects 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 239000010408 film Substances 0.000 description 74
- 239000010410 layer Substances 0.000 description 28
- 150000002500 ions Chemical class 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
第1の実施形態に係る高耐圧電界効果トランジスタおよびその製造方法について、図1〜図3を用いて説明する。
次に、第2の実施形態に係る高耐圧電界効果トランジスタおよびその製造方法について、図4および図5を用いて説明する。
101 半導体基板
102 nウェル
103 ドレイン低濃度領域
104 ソース低濃度領域
105 ドレイン高濃度領域
106 ソース高濃度領域
107,108 ガードリング層
109 ゲート酸化膜
110 フィールド酸化膜
111 ゲート電極
112 非酸化領域
113 中間絶縁膜
114,115 コンタクト層
116,117 配線パターン
Claims (2)
- 半導体基板のn型領域内に、チャネル形成領域を挟んで形成された、p型のドレイン低濃度領域およびソース低濃度領域と、
前記ドレイン低濃度領域内に形成された、該ドレイン低濃度領域よりも高い不純物濃度のドレイン高濃度領域と、
少なくとも前記チャネル形成領域の表面を覆うゲート絶縁膜と、
前記ゲート絶縁膜の端部と接するように、前記ドレイン低濃度領域上に形成された第1フィールド酸化膜と、
前記ゲート絶縁膜を介して前記チャネル形成領域の全面を覆い、且つ、前記第1フィールド酸化膜を介して前記ドレイン低濃度領域の端部を覆うように形成されたゲート電極と、
前記ドレイン低濃度領域のうち、前記ゲート電極と前記ドレイン高濃度領域とに挟まれており且つ表面に当該ドレイン高濃度領域および前記第1フィールド酸化膜が形成されていない非酸化領域と、
前記ドレイン低濃度領域上の、前記非酸化領域及び前記ドレイン高濃度領域を挟んで前記第1フィールド酸化膜と向かい合う位置であって、前記ドレイン高濃度領域と隣り合う位置に形成された第2フィールド酸化膜と
を有する高耐圧電界効果トランジスタの製造方法であって、
前記半導体基板の前記n型領域内に、前記ドレイン低濃度領域およびソース低濃度領域を形成する第1工程と、
前記半導体基板の表面に、前記第1フィールド酸化膜及び前記第2フィールド酸化膜を形成する第2工程と、
前記ゲート絶縁膜および前記ゲート電極を順次形成する第3工程と、
前記非酸化領域になるべき部分と前記ゲート電極とを少なくとも覆うマスクパターンを形成する第4工程と、
前記マスクパターンを用いてp型不純物を導入することにより、前記ドレイン高濃度領域を形成する第5工程と、
を含むことを特徴とする高耐圧電界効果トランジスタの製造方法。 - 前記第5工程の前に、前記非酸化領域に、前記ドレイン低濃度領域よりも高く且つ前記ドレイン高濃度領域よりも低い不純物濃度のp型低抵抗層を形成する第6工程をさらに含むことを特徴とする請求項1に記載の高耐圧電界効果トランジスタの製造方法。
Priority Applications (2)
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JP2006222964A JP5058529B2 (ja) | 2006-08-18 | 2006-08-18 | 高耐圧電界効果トランジスタの製造方法 |
US11/819,983 US7358577B2 (en) | 2006-08-18 | 2007-06-29 | High voltage field effect transistor |
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JP2006222964A JP5058529B2 (ja) | 2006-08-18 | 2006-08-18 | 高耐圧電界効果トランジスタの製造方法 |
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JP2012134200A Division JP5481526B2 (ja) | 2012-06-13 | 2012-06-13 | 高耐圧電界効果トランジスタ |
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JP2008047747A JP2008047747A (ja) | 2008-02-28 |
JP5058529B2 true JP5058529B2 (ja) | 2012-10-24 |
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JP (1) | JP5058529B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010199138A (ja) * | 2009-02-23 | 2010-09-09 | Seiko Instruments Inc | 半導体装置およびその製造方法 |
US9209098B2 (en) | 2011-05-19 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | HVMOS reliability evaluation using bulk resistances as indices |
DE102012202783A1 (de) * | 2012-02-23 | 2013-08-29 | Robert Bosch Gmbh | Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren |
CN106328704B (zh) * | 2015-06-26 | 2019-04-19 | 北大方正集团有限公司 | 一种功率器件及其制造方法 |
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JPH03201445A (ja) * | 1989-12-28 | 1991-09-03 | New Japan Radio Co Ltd | Mosトランジスタの製造方法 |
JPH05304166A (ja) * | 1991-06-12 | 1993-11-16 | New Japan Radio Co Ltd | 高耐圧mos型fetの製造方法 |
US5322804A (en) * | 1992-05-12 | 1994-06-21 | Harris Corporation | Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps |
JPH0621445A (ja) * | 1992-06-30 | 1994-01-28 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
KR100202635B1 (ko) * | 1995-10-13 | 1999-06-15 | 구본준 | 리서프 이디모스 트랜지스터와 이를 이용한 고전압 아날로그의 멀티플렉서회로 |
KR100244282B1 (ko) * | 1997-08-25 | 2000-02-01 | 김영환 | 고전압 트랜지스터의 구조 및 제조 방법 |
US6160290A (en) * | 1997-11-25 | 2000-12-12 | Texas Instruments Incorporated | Reduced surface field device having an extended field plate and method for forming the same |
JP2002134738A (ja) * | 2000-10-19 | 2002-05-10 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
JP3831615B2 (ja) * | 2001-01-16 | 2006-10-11 | 三洋電機株式会社 | 半導体装置とその製造方法 |
JP2002214706A (ja) * | 2001-01-17 | 2002-07-31 | Sony Corp | 画像表示用照明装置、投射型表示装置及び画像表示方法 |
JP2003204062A (ja) | 2002-01-08 | 2003-07-18 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
KR100859701B1 (ko) * | 2002-02-23 | 2008-09-23 | 페어차일드코리아반도체 주식회사 | 고전압 수평형 디모스 트랜지스터 및 그 제조 방법 |
KR100614806B1 (ko) * | 2004-10-27 | 2006-08-22 | 삼성전자주식회사 | 고내압 트랜지스터 및 이의 제조 방법 |
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US7358577B2 (en) | 2008-04-15 |
JP2008047747A (ja) | 2008-02-28 |
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