JP5046524B2 - 記憶素子、記憶装置、及び電子機器 - Google Patents

記憶素子、記憶装置、及び電子機器 Download PDF

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Publication number
JP5046524B2
JP5046524B2 JP2006032662A JP2006032662A JP5046524B2 JP 5046524 B2 JP5046524 B2 JP 5046524B2 JP 2006032662 A JP2006032662 A JP 2006032662A JP 2006032662 A JP2006032662 A JP 2006032662A JP 5046524 B2 JP5046524 B2 JP 5046524B2
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Prior art keywords
conductive layer
layer
insulating layer
insulating
memory element
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JP2006032662A
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Japanese (ja)
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JP2006253667A5 (enExample
JP2006253667A (ja
Inventor
幹央 湯川
圭恵 高野
良信 浅見
舜平 山崎
岳尚 佐藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006032662A priority Critical patent/JP5046524B2/ja
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Publication of JP2006253667A5 publication Critical patent/JP2006253667A5/ja
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JP2006032662A 2005-02-10 2006-02-09 記憶素子、記憶装置、及び電子機器 Expired - Fee Related JP5046524B2 (ja)

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JP2006032662A JP5046524B2 (ja) 2005-02-10 2006-02-09 記憶素子、記憶装置、及び電子機器

Applications Claiming Priority (3)

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JP2005035297 2005-02-10
JP2005035297 2005-02-10
JP2006032662A JP5046524B2 (ja) 2005-02-10 2006-02-09 記憶素子、記憶装置、及び電子機器

Related Child Applications (1)

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JP2012135613A Division JP5521006B2 (ja) 2005-02-10 2012-06-15 半導体装置

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JP2006253667A JP2006253667A (ja) 2006-09-21
JP2006253667A5 JP2006253667A5 (enExample) 2009-02-12
JP5046524B2 true JP5046524B2 (ja) 2012-10-10

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2084745A4 (en) 2006-11-29 2012-10-24 Semiconductor Energy Lab DEVICE AND METHOD FOR THE PRODUCTION THEREOF
JP5374865B2 (ja) * 2007-12-10 2013-12-25 富士通株式会社 抵抗変化素子、これを用いた記憶装置、及びそれらの作製方法
US9012307B2 (en) * 2010-07-13 2015-04-21 Crossbar, Inc. Two terminal resistive switching device structure and method of fabricating
US8946046B1 (en) 2012-05-02 2015-02-03 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
US8884261B2 (en) 2010-08-23 2014-11-11 Crossbar, Inc. Device switching using layered device structure
US9685608B2 (en) 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US10096653B2 (en) 2012-08-14 2018-10-09 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02239664A (ja) * 1989-03-13 1990-09-21 Olympus Optical Co Ltd 電気的記憶装置
JP2851968B2 (ja) * 1991-04-26 1999-01-27 キヤノン株式会社 改良された絶縁ゲート型トランジスタを有する半導体装置及びその製造方法
JPH07211873A (ja) * 1994-01-24 1995-08-11 Toshiba Corp アンチフュ−ズ素子
JP4928045B2 (ja) * 2002-10-31 2012-05-09 大日本印刷株式会社 相変化型メモリ素子およびその製造方法
JP4393859B2 (ja) * 2002-12-27 2010-01-06 株式会社半導体エネルギー研究所 記録媒体の作製方法
JP4489363B2 (ja) * 2003-03-03 2010-06-23 シャープ株式会社 不揮発性記憶素子、不揮発性記憶回路、不揮発性記憶カードおよび記録再生装置

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