JP5043657B2 - 事前に組立済みのプロセス配管の内部表面を現場においてコーティングする方法及びシステム - Google Patents
事前に組立済みのプロセス配管の内部表面を現場においてコーティングする方法及びシステム Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
Description
Claims (25)
- 導電性加工物の内部表面に材料を適用する方法において、
前記導電性加工物からの陽極の電気的な絶縁を維持しつつ、前記導電性加工物の複数の開口部に前記陽極を装着する段階であって、前記開口部は、少なくとも1つの入口と少なくとも1つの出口を含んでいる、段階と、
前記導電性加工物が陰極として機能するように、プラズマが前記導電性加工物の内部に生成されるよう前記導電性加工物と前記陽極との間に電圧バイアスを印加するように構成されているバイアスシステムを接続する段階と、
真空源を前記導電性加工物のそれぞれの前記出口に結合して、前記導電性加工物の内部に安定した圧力を生成するべく、ガスを導入する前に前記導電性加工物の内部を低圧にポンピングする段階と、
前記導電性加工物のそれぞれの前記入口にガス源を結合することにより、前記導電性加工物に適用される前記材料を含む前記ガスを導入する段階と、
前記導電性加工物の内部のプラズマ強度が前記バイアスシステムの変化によって調節可能である状態を維持するために、前記ガス源及び前記真空源を調節して前記導電性加工物を内部直径に応じた内部圧力にし、前記状態は中空陰極効果をもたらす段階と、
を有し、前記導電性加工物に適用される前記材料は、前記ガスにのみ含まれる方法。 - 光学又はラングミュア検出器を使用して前記状態を監視することにより、前記導電性加工物の内部表面への前記材料の導入を起動する制御システムに対してフィードバックするための情報を生成する段階を更に有する請求項1記載の方法。
- 前記バイアスシステムを接続する段階は、前記導電性加工物に負のパルス化DC電圧を印加する段階を含み、該段階は、デューティサイクル中のバイアスの選択を含み、
前記電圧が「オン」である際には、負の電圧が前記導電性加工物に対して印加されて、前記導電性加工物の内部に生成された中空陰極プラズマ内の正のソースガスイオンが前記内部表面に吸着され、化学的に反応して前記内部表面をコーティングし、
前記電圧が「オフ」である際には、前記内部表面をコーティングする段階において均一性を提供するべく、前記内部に前記正のソースガスイオンが十分に補充される請求項1記載の方法。 - 前記デューティサイクルの選択は、前記内部表面のコーティングの結果としての前記内部表面に沿った正の電荷の消散を実現することに更に基づいており、この場合に、前記コーティングの材料は、絶縁体である請求項3記載の方法。
- 前記ガス源を結合する段階は、コーティングとして前記導電性加工物の内部表面に適用される前記材料として、DLC(Diamond−Like Carbon)を有する炭化水素のソースガスを供給する段階を含む請求項1記載の方法。
- 前記ガス源を結合する段階は、メタン、アセチレン、及びトルエンの中のいずれかを供給する段階を含む請求項1記載の方法。
- スパッタリング原子を具備するガスを使用すると共に、負のバイアスを前記導電性加工物に対して印加して前記内部表面から汚染物質をスパッタリングすることにより、前記内部表面を事前浄化する段階を更に有する請求項1記載の方法。
- 前記事前浄化に使用される前記ガスは、アルゴン又はアルゴン/炭化水素混合物のいずれかである請求項7記載の方法。
- 前記ガスは、前記導電性加工物の内部表面に前記材料を適用する間に形成されるコーティングの再スパッタリングを提供するべく前記内部表面をコーティングする際にも導入され、これにより、前記内部表面の長さに沿った前記コーティングの均一性を改善する請求項8記載の方法。
- 前記導電性加工物に対して負のバイアスを印加すると共に、炭化水素ガスを導入することによって予備的な炭素注入レイヤを提供し、これにより、前記導電性加工物の内部表面に適用されてコーティングを形成する前記材料であるDLC(Diamond−Like Carbon)の接着性を改善する段階を更に有する請求項1記載の方法。
- 前記バイアスシステムを接続する段階は、DCパルス化バイアスを印加してイオン照射エネルギーを設定する段階を含んでおり、且つ、前記DCパルス化バイアスの大きさを変化させることによってDLC(Diamond−Like Carbon)からなる前記コーティングの特性を制御する段階を含んでいる請求項10記載の方法。
- 前記特性を制御する段階は、異なる炭素含有量のレベルを具備したソースガスを同時に又は連続的に導入する段階を更に含む請求項11記載の方法。
- 前記ガス源の前記結合段階の前に前記導電性加工物を組み立てる段階を更に有しており、前記組立段階は、複数のコンポーネントを1つに溶接する段階を含んでいる請求項1記載の方法。
- 前記バイアスシステムは、前記導電性加工物上の誘導負バイアスを伴う高周波(Radio Frequency:RF)電圧源である請求項1記載の方法。
- 前記バイアスシステムは、前記導電性加工物上の重畳された負のDCパルス化電圧を伴うRF源である請求項1記載の方法。
- 導電性加工物の内部表面に材料を適用するシステムにおいて、
前記加工物から電気的に絶縁された状態において前記加工物の複数の開口部に結合され、前記加工物の内部を介した接続については互いに絶縁された陽極と、
前記加工物を陰極として確立するべく前記加工物に接続され、前記加工物内にプラズマが生成されるように、電圧バイアスを印加するべく構成されたバイアスシステムと、
前記加工物からガスを排出するべく少なくとも1つの前記開口部に接続された真空源と、
前記加工物の内部表面に適用される材料を含むガスを導入するべく少なくとも1つの前記開口部に接続されたガス源と、
前記加工物が内部直径に応じた内部圧力にされて、プラズマ強度が前記バイアスシステムの変化によって調節可能である中空陰極効果を示す状態をもたらすように、前記真空源及び前記ガス源を調節するべく構成された制御システムと、
を有するシステム。 - 前記プラズマ強度を監視すると共に、前記プラズマ強度を示すフィードバック情報を生成するべく配置された検出器を更に有する請求項16記載のシステム。
- 前記バイアスシステムは、負のパルス化DC電圧を前記加工物に対して印加し、
前記電圧は、前記電圧が「オン」である際に、中空陰極プラズマ内の正のソースイオンが前記加工物の前記内部表面に吸着され、これと反応するように、負のバイアスが前記加工物に対して印加され、前記電圧が「オフ」である際には、前記内部表面の長さに沿ってコーティングの均一性を提供するべく前記加工物内に前記正のソースイオンが十分に補充されるように選択されたデューティサイクルを具備している請求項16記載のシステム。 - 前記ガス源は、コーティングとして前記導電性加工物の内部表面に適用される前記材料として、DLC(Diamond−Like Carbon)を有する炭化水素を供給する請求項18記載のシステム。
- 前記バイアスシステムは、RF電圧源と、負のバイアスを前記加工物に対して印加する手段と、を含んでいる請求項16記載のシステム。
- 前記バイアスシステムは、RF電圧源と、負のDCパルス化電圧を前記加工物上に重畳する手段と、を含んでいる請求項16記載のシステム。
- 導電性加工物の内部表面に材料を適用する方法において、
前記導電性加工物からの陽極の電気的な絶縁を維持し、かつ前記導電性加工物の内部を介した接続についての前記陽極の互いの電気的な絶縁を維持して前記導電性加工物の複数の開口部に前記陽極を装着する段階であって、前記開口部は、少なくとも1つの入口と少なくとも1つの出口を含んでいる、段階と、
前記導電性加工物が陰極として機能するように、バイアスシステムを接続する段階と、
真空源を前記導電性加工物のそれぞれの前記出口に結合する段階と、
前記導電性加工物のそれぞれの前記入口にガス源を結合することにより、前記導電性加工物に適用される前記材料を含むガスを導入し、それにより前記材料が、前記導電性加工物の内部に前記材料のソース電極を挿入することなしに、中空陰極効果をもたらすプラズマによって前記導電性加工物の内部表面に沿って適用される段階と、
を有する方法。 - 前記真空源を結合する段階は、前記導電性加工物の内部に安定した圧力を生成するべく、前記ガスを導入する前に前記導電性加工物の内部を低圧にポンピングする段階を含んでおり、前記バイアスシステムは、前記プラズマが前記導電性加工物の内部に生成されるよう前記導電性加工物と前記陽極との間に電圧バイアスを印加するように構成されている請求項22記載の方法。
- 前記導電性加工物の内部のプラズマ強度が前記バイアスシステムの変化によって調節可能である状態を維持するために、前記ガス源及び前記真空源を調節して前記導電性加工物を内部直径に応じた内部圧力にする段階を更に有しており、前記状態は、前記中空陰極効果をもたらす請求項23記載の方法。
- 前記バイアスシステムを接続する段階は、前記導電性加工物に負のパルス化DC電圧を印加する段階を含み、該段階は、デューティサイクル中のバイアスの選択を含み、
前記電圧が「オン」である際には、負の電圧が前記導電性加工物に対して印加されて、前記導電性加工物の内部に生成された中空陰極プラズマ内の正のソースガスイオンが前記内部表面に吸着され、化学的に反応して前記内部表面をコーティングし、
前記電圧が「オフ」である際には、前記内部表面をコーティングする段階において均一性を提供するべく、前記導電性加工物の内部に前記正のソースガスイオンが十分に補充される請求項22記載の方法。
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US10/891,983 US7300684B2 (en) | 2004-07-15 | 2004-07-15 | Method and system for coating internal surfaces of prefabricated process piping in the field |
US10/891,983 | 2004-07-15 | ||
PCT/US2005/023906 WO2006019565A2 (en) | 2004-07-15 | 2005-07-06 | Method and system for coating internal surfaces of prefabricated process piping in the field |
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EP (1) | EP1619265B1 (ja) |
JP (1) | JP5043657B2 (ja) |
AT (1) | ATE374264T1 (ja) |
CA (1) | CA2573485C (ja) |
DE (1) | DE602005002593T2 (ja) |
ES (1) | ES2292015T3 (ja) |
PL (1) | PL1619265T3 (ja) |
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WO2006019565A3 (en) | 2007-04-26 |
US7300684B2 (en) | 2007-11-27 |
EP1619265B1 (en) | 2007-09-26 |
WO2006019565B1 (en) | 2007-07-12 |
WO2006019565A2 (en) | 2006-02-23 |
CA2573485C (en) | 2010-11-02 |
ATE374264T1 (de) | 2007-10-15 |
PL1619265T3 (pl) | 2008-01-31 |
EP1619265A1 (en) | 2006-01-25 |
JP2008506840A (ja) | 2008-03-06 |
PT1619265E (pt) | 2007-12-04 |
CA2573485A1 (en) | 2006-02-23 |
US20060011468A1 (en) | 2006-01-19 |
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