JP5036173B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5036173B2
JP5036173B2 JP2005337900A JP2005337900A JP5036173B2 JP 5036173 B2 JP5036173 B2 JP 5036173B2 JP 2005337900 A JP2005337900 A JP 2005337900A JP 2005337900 A JP2005337900 A JP 2005337900A JP 5036173 B2 JP5036173 B2 JP 5036173B2
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film
semiconductor
semiconductor film
region
conductive layer
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JP2005337900A
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Japanese (ja)
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JP2006179878A5 (enExample
JP2006179878A (ja
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健吾 秋元
穂高 丸山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005337900A priority Critical patent/JP5036173B2/ja
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Publication of JP2006179878A5 publication Critical patent/JP2006179878A5/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005337900A 2004-11-26 2005-11-23 半導体装置の作製方法 Expired - Fee Related JP5036173B2 (ja)

Priority Applications (1)

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JP2005337900A JP5036173B2 (ja) 2004-11-26 2005-11-23 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004343132 2004-11-26
JP2004343132 2004-11-26
JP2005337900A JP5036173B2 (ja) 2004-11-26 2005-11-23 半導体装置の作製方法

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JP2006179878A JP2006179878A (ja) 2006-07-06
JP2006179878A5 JP2006179878A5 (enExample) 2008-10-23
JP5036173B2 true JP5036173B2 (ja) 2012-09-26

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JP2005337900A Expired - Fee Related JP5036173B2 (ja) 2004-11-26 2005-11-23 半導体装置の作製方法

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4799293B2 (ja) 2005-09-21 2011-10-26 三洋電機株式会社 無線装置
US7642114B2 (en) 2006-07-19 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Micro electro mechanical device and manufacturing method thereof
JP5073396B2 (ja) * 2007-07-20 2012-11-14 新日本製鐵株式会社 高温強度と低温靭性に優れる溶接構造用鋼の製造方法
KR101358854B1 (ko) 2007-09-06 2014-02-06 삼성전자주식회사 반도체 소자 및 상기 반도체 소자의 금속 게이트 형성 방법
US8187956B2 (en) * 2007-12-03 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film
JP5363009B2 (ja) * 2008-02-29 2013-12-11 株式会社ジャパンディスプレイ 表示装置およびその製造方法
KR100927585B1 (ko) 2008-03-05 2009-11-23 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP5318865B2 (ja) * 2008-05-29 2013-10-16 パナソニック株式会社 薄膜トランジスタと、その製造方法と、薄膜トランジスタを用いた電子機器
TWI875442B (zh) * 2008-07-31 2025-03-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
TWI508282B (zh) * 2008-08-08 2015-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
CN103928476A (zh) 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
EP2172977A1 (en) * 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
TW202025500A (zh) * 2008-11-07 2020-07-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
WO2011010545A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043194A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102008769B1 (ko) 2009-11-27 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2011151955A1 (ja) * 2010-05-31 2011-12-08 シャープ株式会社 半導体素子、薄膜トランジスタ基板及び表示装置
KR101863941B1 (ko) * 2010-06-08 2018-06-04 삼성디스플레이 주식회사 오프셋 구조의 박막 트랜지스터
WO2012137711A1 (ja) * 2011-04-08 2012-10-11 シャープ株式会社 半導体装置および表示装置
JPWO2012153364A1 (ja) 2011-05-10 2014-07-28 パナソニック株式会社 表示用薄膜半導体装置及び表示用薄膜半導体装置の製造方法
KR101952570B1 (ko) * 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101987320B1 (ko) 2012-12-31 2019-06-11 삼성디스플레이 주식회사 표시 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0828517B2 (ja) * 1989-07-04 1996-03-21 シャープ株式会社 薄膜トランジスタアレイ
JPH08254680A (ja) * 1995-03-17 1996-10-01 Toshiba Corp 半導体装置およびその製造方法
JP4101340B2 (ja) * 1997-12-12 2008-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000314897A (ja) * 1999-05-06 2000-11-14 Hitachi Ltd 液晶表示装置
JP2002324808A (ja) * 2001-01-19 2002-11-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2003089864A (ja) * 2001-09-18 2003-03-28 Mitsui Mining & Smelting Co Ltd アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材

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