JP5027990B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP5027990B2
JP5027990B2 JP2004234687A JP2004234687A JP5027990B2 JP 5027990 B2 JP5027990 B2 JP 5027990B2 JP 2004234687 A JP2004234687 A JP 2004234687A JP 2004234687 A JP2004234687 A JP 2004234687A JP 5027990 B2 JP5027990 B2 JP 5027990B2
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Japan
Prior art keywords
semiconductor substrate
semiconductor
semiconductor device
cavity
substrate
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JP2004234687A
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Japanese (ja)
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JP2006054309A (en
Inventor
盛司 山口
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2004234687A priority Critical patent/JP5027990B2/en
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Publication of JP5027990B2 publication Critical patent/JP5027990B2/en
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Description

本発明は、半導体装置およびその製造方法に係り、特に、高集積化構造および高密度実装構造に関するものである。   The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a highly integrated structure and a high-density mounting structure.

コンピュータはいうまでもなく、携帯電話等の通信機器、一般家庭製品や玩具、自動車にいたるまで、ＬＳＩの利用は拡大の一途である。しかし、その一方で、これらの製品から生じる不要輻射（Electromagnetic Interference:EMI）がテレビ・ラジオ等の受信装置の電波障害や他システムの誤動作の原因として問題になっている。これらの問題に対して、フィルタリングやシールディングといった製品全体としての対策も施されているが、部品点数増大・コスト増大・製品上対策の難しさ等の観点から、ＬＳＩパッケージとしてのノイズ抑制が強く要請されている。   Needless to say, the use of LSIs is expanding to communication devices such as mobile phones, general household products, toys, and automobiles. However, on the other hand, unnecessary radiation (Electromagnetic Interference: EMI) generated from these products has become a problem as a cause of radio wave interference of receivers such as televisions and radios and malfunctions of other systems. Countermeasures for the entire product, such as filtering and shielding, have been taken to deal with these problems, but noise suppression as an LSI package is strong from the standpoint of increasing the number of parts, increasing costs, and difficulty in taking countermeasures on the product. It has been requested.

このような状況下、各製品においてＬＳＩはキーデバイスとして位置付けられており、製品の競争力確保のために、ＬＳＩの大規模化・高速化が要求されている。大規模・高速のＬＳＩとなるに従い、その瞬時電流は非常に大きくなってしまうことになり、不要輻射の増大を引き起こすことになる。   Under such circumstances, the LSI is positioned as a key device in each product, and it is required to increase the scale and speed of the LSI in order to ensure the competitiveness of the product. As the LSI becomes large-scale and high-speed, the instantaneous current becomes very large, causing an increase in unnecessary radiation.

このように、ＬＳＩの微細化及び、動作周波数の高速化に伴い、ノイズ対策が大きな問題となってきている。
一般に、セルベースの設計手法においては、ノイズ対策として、電源電圧の変動を受けやすいセルの周辺にコンデンサセルを配置し、コンデンサの両電極にあたる端子を、電源配線とグランド配線に固定することでバイパスコンデンサを形成させる。
これにより電源電圧の変動を抑制するとともに、電源配線を介してノイズが伝播することを抑制している。 Thus, with the miniaturization of LSIs and the increase in operating frequency, noise countermeasures have become a major problem.
In general, in cell-based design methods, as a countermeasure against noise, a capacitor cell is placed around a cell that is susceptible to power supply voltage fluctuations, and the terminals corresponding to both electrodes of the capacitor are bypassed by fixing them to the power supply wiring and ground wiring. A capacitor is formed.
This suppresses fluctuations in the power supply voltage and suppresses noise from propagating through the power supply wiring.

しかしながら、基本セルに隣接させてコンデンサセルを追加したのでは、チップ面積は増大の一途をたどる。   However, if a capacitor cell is added adjacent to the basic cell, the chip area continues to increase.

そこで、チップ面積増大を防止すべく、パターンのレイアウト後に空き領域を形成し、空き領域の電源配線下に基板コンタクトを配置し、電源配線とグランド配線との間にセルをバイパスしたコンデンサを配置することにより、半導体集積回路装置の面積増大を抑制しつつも、ノイズ放射の低減、外部から侵入するノイズによる誤動作の低減を実現する方法が提案されている。   Therefore, in order to prevent an increase in the chip area, an empty area is formed after the layout of the pattern, a substrate contact is arranged under the power supply wiring in the empty area, and a capacitor bypassing the cell is arranged between the power supply wiring and the ground wiring. Thus, there has been proposed a method of realizing reduction of noise emission and malfunction due to noise entering from outside while suppressing an increase in the area of the semiconductor integrated circuit device.

また、さらなるノイズの低減のためにＤＲＡＭなどにおいては、２枚のシリコンウェーハの張り合わせ技術を用いたＳＯＩ（ｓｉｌｉｃｏｎ ｏｎ ｉｎｓｕｌａｔｏｒ）構造基板を用いてメモリセル部と他の回路部と、あるいはスイッチングトランジスタ部とキャパシタ部とを絶縁分離した構造などが提案されている。（特許文献１）   In order to further reduce noise, in a DRAM or the like, a memory cell part and other circuit parts or a switching transistor part using an SOI (silicon on insulator) structure substrate using a bonding technique of two silicon wafers A structure in which the capacitor portion and the capacitor portion are insulated and separated has been proposed. (Patent Document 1)

特開平０９−２４６４８３号公報Japanese Patent Application Laid-Open No. 09-246483

このようにＳＯＩ構造ではノイズの低減をはかることはできるものの、張り合わせ後に素子領域を形成しなければならないため、回路設計に制限があり、集積度の向上が困難であった。
またＳＯＩ基板は平面内の張り合わせであるため、剥離が生じ易く、歩留まり低下の原因となっていた。
本発明は、前記実情に鑑みてなされたもので、ノイズ低減をはかるとともに小型で集積度の高い半導体装置を提供することを目的とする。
また本発明は、機械的衝撃に強く、剥離が生じにくく、信頼性の高い半導体装置を提供することを目的とする。
また本発明は、設計の自由度の高い半導体装置を提供することを目的とする。 Although the SOI structure can reduce noise as described above, the element region has to be formed after bonding, so that the circuit design is limited and it is difficult to improve the degree of integration.
Further, since the SOI substrate is bonded in a plane, peeling is likely to occur, causing a decrease in yield.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a semiconductor device that is small and highly integrated while reducing noise.
It is another object of the present invention to provide a highly reliable semiconductor device that is resistant to mechanical shock and hardly peels off.
It is another object of the present invention to provide a semiconductor device with a high degree of design freedom.

そこで本発明の半導体装置は、素子領域が形成され、表面にキャビティを有する第１の半導体基板と、素子領域が形成され、前記キャビティ内に収納された第２の半導体基板と、前記第１または第２の半導体基板に接続された外部接続端子と、を備え、前記キャビティの内壁全体が、コンタクトホールを有する絶縁層を介して、前記第２の半導体基板に当接しており、前記第２の半導体基板は、前記第１の半導体基板の前記キャビティの内壁に、接着剤なしに直接接合によって接合され、前記第１および第２の半導体基板は、前記コンタクトホールに相当する領域に高濃度ドープされたコンタクト領域を有し、前記第２の半導体基板の電極形成面が前記第１の半導体基板のキャビティ形成面と同一面側に位置していることを特徴とする。 Therefore, a semiconductor device of the present invention includes a first semiconductor substrate having an element region formed and having a cavity on the surface, a second semiconductor substrate having an element region formed therein and housed in the cavity, and the first or An external connection terminal connected to the second semiconductor substrate, and the entire inner wall of the cavity is in contact with the second semiconductor substrate via an insulating layer having a contact hole, and the second semiconductor substrate semiconductor substrate, an inner wall of the cavity of the first semiconductor substrate, are bonded by direct bonding without an adhesive, before Symbol first and second semiconductor substrates are highly doped in a region corresponding to the contact hole The electrode forming surface of the second semiconductor substrate is located on the same side as the cavity forming surface of the first semiconductor substrate .

この構成により、第１の半導体基板と第２の半導体基板とからなる２つの基板で回路構成がなされているため、両基板上に形成された半導体装置は相互にノイズを与えにくい状態となっており、第１および第２の半導体基板で容易に回路素子を分離形成することができるため不要輻射の低減を図ることができる。また、第１の半導体基板に形成されたキャビティに当接するように第２の半導体基板が搭載されているため、強固に接合されており、剥離が生じにくく機械的衝撃に強い。また当接面積が大きいため、機能的接続と機能的分離が容易であり、一部では当接面で電気的接続をはかりつつ、一部では当接面で電気的絶縁を図ることが出来る。   With this configuration, since the circuit configuration is made up of two substrates including the first semiconductor substrate and the second semiconductor substrate, the semiconductor devices formed on both substrates are less likely to give noise to each other. In addition, since the circuit elements can be easily formed separately from the first and second semiconductor substrates, unnecessary radiation can be reduced. Further, since the second semiconductor substrate is mounted so as to be in contact with the cavity formed in the first semiconductor substrate, the second semiconductor substrate is firmly bonded, and is not easily peeled off and is resistant to mechanical shock. In addition, since the contact area is large, functional connection and functional separation are easy, and electrical insulation can be achieved at some contact surfaces while some are electrically connected at the contact surfaces.

また第１および第２の半導体基板それぞれに回路素子の形成を行った後に、両者を接合することができるため、不要な熱工程を経ることなく形成することができ、微細かつ高精度の半導体装置を提供することができる。   In addition, since the circuit elements can be formed on the first and second semiconductor substrates, respectively, the two can be bonded to each other. Therefore, the first and second semiconductor substrates can be formed without an unnecessary thermal process. Can be provided.

また、第１の半導体基板に形成されたキャビティに第２の半導体基板を接合した後に回路素子を形成することにより、通常の半導体プロセスで、容易に、不要輻射に強い半導体装置を形成することができる。   In addition, by forming the circuit element after bonding the second semiconductor substrate to the cavity formed in the first semiconductor substrate, it is possible to easily form a semiconductor device resistant to unnecessary radiation by a normal semiconductor process. it can.

外部接続端子の形成が容易であり、外側にある第１の半導体基板を実装基板として用いる場合にも実装基板が半導体基板で構成されているため、この第１の半導体基板が外部からの不要輻射のバッファとなり、不要輻射の伝搬を抑制することができる。また、半導体基板内に不純物拡散層を形成することにより貫通孔を形成することなく拡散領域の形成により他の面への接続端子の取り出しが容易であり、相互に他方の半導体基板に外部接続端子を形成することができる。ファインピッチでの形成が可能となるため、小型化が可能となる。   The external connection terminals can be easily formed, and even when the first semiconductor substrate on the outside is used as the mounting substrate, the mounting substrate is composed of the semiconductor substrate. Therefore, the first semiconductor substrate is exposed to unnecessary radiation from the outside. And the propagation of unwanted radiation can be suppressed. Also, by forming the impurity diffusion layer in the semiconductor substrate, it is easy to take out the connection terminal to the other surface by forming the diffusion region without forming the through hole, and the external connection terminal is connected to the other semiconductor substrate. Can be formed. Since formation with a fine pitch is possible, miniaturization is possible.

また、第１の半導体基板を配線基板として用いる場合にも、拡散層の形成による電気的接続を用いることにより容易に内部での接続が可能であり、構造が簡単で、小型化、薄型化が容易となる。   Even when the first semiconductor substrate is used as a wiring substrate, the internal connection can be easily made by using the electrical connection by forming the diffusion layer, the structure is simple, and the size and thickness can be reduced. It becomes easy.

さらにまた、第１および第２の半導体基板の線膨張率を近いものとすることができ、温度変化に対しても強度の高いものを得ることができる。さらにまたキャビティの形成が通常のエッチング工程により容易に制御可能である。また、信号処理回路などの能動素子の集積された第１の半導体基板を用いるようにすれば、チップ部品の搭載が不要でかつ小型化薄型化が可能となり、しかも実装後ダイシングすることにより個々の部品に分割するいわゆるＣＳＰ（チップサイズパッケージ化）工程での形成が容易となる。この場合はダイシング後にバンプや半田ボールなどの外部接続端子を形成するようにしてもよい。
また、大規模な設備なしに、実装メーカーでの組み立てが実現可能となる。 Furthermore, the linear expansion coefficients of the first and second semiconductor substrates can be made close to each other, and a high strength can be obtained against temperature changes. Furthermore, the formation of the cavity can be easily controlled by a normal etching process. Further, if the first semiconductor substrate on which active elements such as a signal processing circuit are integrated is used, it is not necessary to mount chip parts, and the size and thickness can be reduced. Formation in a so-called CSP (chip size packaging) process of dividing into parts is facilitated. In this case, external connection terminals such as bumps and solder balls may be formed after dicing.
In addition, assembly by a mounting manufacturer can be realized without a large-scale facility.

この構成によれば、ノイズ信号の伝達手段を絶つことができ、不要輻射対策が容易に実現可能である。 According to the configuration of this, it is possible to cut off the transmission means of the noise signal, an unnecessary radiation measures easily realized.

この構成によれば、確実にノイズ信号の伝達手段を絶つことができ、不要輻射対策が容易に実現可能である。 According to the configuration of this, it is possible to reliably cut off the transmission means of the noise signal, an unnecessary radiation measures easily realized.

この構成によれば、第１および第２の半導体基板の相互接続を行う場合にも深さ方向の配線距離が短くてすむため、配線長の総和が低減され、寄生抵抗の低減を図ることができる。 According to the configuration of this, since living in the short wiring distance in the depth direction may connect to each other of the first and second semiconductor substrates, the sum of the wiring length is reduced, reducing the parasitic resistance Can do.

また、本発明の半導体装置は、前記第２の半導体基板の電極形成面が前記第１の半導体基板のキャビティ形成面と同一面側に位置しているものを含む。
この構成によれば、再配列配線の形成をはじめ、外部接続端子形成のための処理が一括して実現できるため外部接続が容易である。また外部接続端子形成面が平坦であるため、外部接続端子の形成が容易でよりファインピッチ化が可能となる。 The semiconductor device of the present invention includes a semiconductor device in which an electrode forming surface of the second semiconductor substrate is located on the same surface side as a cavity forming surface of the first semiconductor substrate.
According to this configuration, since the processing for forming the external connection terminals including the rearrangement wiring can be realized in a lump, external connection is easy. In addition, since the external connection terminal formation surface is flat, the external connection terminals can be easily formed and a fine pitch can be achieved.

また、本発明の半導体装置は、前記第１の半導体基板の前記キャビティ形成面と、前記第２の半導体基板の表面とは同一面上にあるものを含む。
この構成によれば、通常のリソグラフィ工程で第１および第２の半導体基板表面への再配列配線などの外部接続配線が高精度かつ容易に実現可能である。 In the semiconductor device of the present invention, the cavity forming surface of the first semiconductor substrate and the surface of the second semiconductor substrate are on the same surface.
According to this configuration, an external connection wirings such as rearrangement wiring to the first and second semiconductor substrate surface in the normal lithography process feasible accurately and easily.

また、本発明の半導体装置は、前記外部接続端子が、前記第１の半導体基板の前記キャビティ形成面と、前記第２の半導体基板の表面とに形成された突出部であるものを含む。
この構成により、ＣＳＰ（Ｃｈｉｐ Ｓｉｚｅ Ｐａｃｋａｇｅ）構造が容易に実現でき、小型で信頼性の高いものとなる。また端子間距離を十分に大きく取ることができる。 In the semiconductor device of the present invention, the external connection terminal may be a protrusion formed on the cavity forming surface of the first semiconductor substrate and the surface of the second semiconductor substrate.
With this configuration, a CSP (Chip Size Package) structure can be easily realized, which is small and highly reliable. Moreover, the distance between terminals can be made sufficiently large.

また、本発明の半導体装置は、前記外部接続端子が、前記第２の半導体基板から前記第１の半導体基板の前記キャビティ形成面に伸長する導体パターンを介して前記第１の半導体基板上に導出されたものを含む。
この構成により、容易に外部接続が実現可能となる。また、外部接続端子形成面が増大するため、端子間距離の増大を図ることが可能となる。さらにまた、積層した場合の相互接続がこの導体パターンを介して実現可能となる。 In the semiconductor device of the present invention, the external connection terminal is led out onto the first semiconductor substrate through a conductor pattern extending from the second semiconductor substrate to the cavity forming surface of the first semiconductor substrate. Including
With this configuration, external connection can be easily realized. Moreover, since the external connection terminal formation surface increases, it is possible to increase the distance between terminals. Furthermore, the interconnection in the case of lamination can be realized through this conductor pattern.

また本発明の半導体装置は、前記外部接続端子が、前記第２の半導体基板から前記基板の前記キャビティ形成面に伸長する導体パターンを含む再配列配線部を介して導出されるものを含む。
この構成により、外部接続端子形成面が増大するため、端子間距離の増大を図ることが可能となる。 The semiconductor device of the present invention includes one in which the external connection terminal is led out through a rearrangement wiring portion including a conductor pattern extending from the second semiconductor substrate to the cavity forming surface of the substrate.
With this configuration, the external connection terminal formation surface is increased, so that the distance between terminals can be increased.

また本発明の半導体装置は、前記第２の半導体基板が第１の半導体基板の前記キャビティ内に絶縁性樹脂を介して固着されるものを含む。
この構成により、第２の半導体基板はより強固にキャビティ内に固着される。 The semiconductor device of the present invention includes a semiconductor device in which the second semiconductor substrate is fixed in the cavity of the first semiconductor substrate via an insulating resin.
With this configuration, the second semiconductor substrate is more firmly fixed in the cavity.

また本発明の半導体装置は、前記第２の半導体基板が前記キャビティとの間に空隙を有するものを含む。
この構成により、基板と第２の半導体基板との線膨張率が異なる場合にはこの空隙がバッファとなり、基板クラックが生じるのを防止することができる。また、基板が導電性基板である場合には、この空隙の存在により浮遊容量の増大を防ぐことができる。 The semiconductor device of the present invention includes a semiconductor device in which the second semiconductor substrate has a gap between the cavity and the second semiconductor substrate.
With this configuration, when the linear expansion coefficients of the substrate and the second semiconductor substrate are different, this gap serves as a buffer, and it is possible to prevent substrate cracks from occurring. Further, when the substrate is a conductive substrate, an increase in stray capacitance can be prevented due to the presence of the gap.

また本発明の半導体装置は、前記第１および第２の半導体基板はいずれも同一組成をもつ基板であるものを含む。
この構成により、線膨張率も近く、信頼性の高いものとなる。 The semiconductor device of the present invention includes one in which both the first and second semiconductor substrates are substrates having the same composition.
With this configuration, the linear expansion coefficient is close and the reliability is high.

また本発明の半導体装置は、前記第１および第２の半導体基板がいずれもシリコンで構成されるものを含む。
この構成により、線膨張率もより近く、信頼性の高いものとなる。 The semiconductor device of the present invention includes a semiconductor device in which both the first and second semiconductor substrates are made of silicon.
With this configuration, the linear expansion coefficient is closer and the reliability is high.

また本発明の半導体装置は、前記第１および第２の半導体基板は不純物濃度が異なる基板であるものを含む。   The semiconductor device of the present invention includes one in which the first and second semiconductor substrates are substrates having different impurity concentrations.

また本発明の半導体装置は、前記第２の半導体基板は第１の半導体基板のキャビティ内壁に直接接合によって接合された基板であるものを含む。
この構成によれば接着剤を用いることなく密着性の良好な接合を得ることができる。 In the semiconductor device according to the present invention, the second semiconductor substrate may be a substrate bonded directly to the cavity inner wall of the first semiconductor substrate by bonding.
According to this configuration, it is possible to obtain a bond with good adhesion without using an adhesive.

本発明によれば、第１の半導体基板表面に形成したキャビティ内に第２の半導体基板を収納し、コンタクトを形成しているため、不要輻射を低減し、機械的強度が高く、薄型で信頼性の高い半導体装置を形成することができる。   According to the present invention, since the second semiconductor substrate is accommodated in the cavity formed on the surface of the first semiconductor substrate and the contact is formed, the unnecessary radiation is reduced, the mechanical strength is high, the thin and reliable. A highly reliable semiconductor device can be formed.

以下、本発明の実施の形態について、図面を参照しつつ詳細に説明する。
（実施の形態１）
本実施の形態１の半導体装置の断面図を図１に示す。図２は図１の半導体装置の回路構成を示す説明視図である。
この半導体装置は、ディジタル携帯電話を構成するもので、不要輻射の伝播を防止し、ノイズの低減を図ることを企図し、ベースバンド部と高周波部とを別の基板で構成したことを特徴とするものである。すなわちこの半導体装置は、ベースバンド部を構成するシリコン基板からなる第１の半導体基板１に形成されたキャビティ２内に絶縁膜としての酸化シリコン膜３を介して、高周波部を構成するシリコン基板からなる第２の半導体基板４を搭載したもので、これら第１および第２の半導体基板の外部接続端子は再配列配線５を介して形成される。そして第２の半導体基板の素子形成面４ｅが第１の半導体基板のキャビティ２の形成されたキャビティ形成面１ｃ側に位置するように、フェースアップで搭載される。ここで、外部接続端子６は、再配列配線５およびパッシベーション膜７を介して前記キャビティ形成面１ｃ側に位置する第２の半導体基板４の表面および前記第１の半導体基板のキャビティ形成面に配設されている。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
A cross-sectional view of the semiconductor device of the first embodiment is shown in FIG. FIG. 2 is an explanatory view showing a circuit configuration of the semiconductor device of FIG.
This semiconductor device constitutes a digital cellular phone, and is intended to prevent the propagation of unwanted radiation and to reduce noise, and is characterized in that the baseband part and the high-frequency part are constituted by different substrates. To do. That is, this semiconductor device is formed from a silicon substrate constituting a high-frequency part through a silicon oxide film 3 as an insulating film in a cavity 2 formed in a first semiconductor substrate 1 comprising a silicon substrate constituting a baseband part. The external connection terminals of the first and second semiconductor substrates are formed via the rearrangement wiring 5. Then, the second semiconductor substrate is mounted face up so that the element formation surface 4e of the second semiconductor substrate is located on the cavity formation surface 1c side where the cavity 2 of the first semiconductor substrate is formed. Here, the external connection terminals 6 are arranged on the surface of the second semiconductor substrate 4 located on the cavity forming surface 1c side and the cavity forming surface of the first semiconductor substrate via the rearrangement wiring 5 and the passivation film 7. It is installed.

この第１の半導体基板１および第２の半導体基板４は、絶縁膜５ａと導体パターン５ｂとからなる再配列配線５を介してチップ表面全体に接続用パッド６ａを形成してなり、この接続用パッド６ａとこの接続用パッド６ａ上に形成された金バンプ６ｂとで外部接続用端子６を構成している。また、キャビティ形成面１ｃに形成された外部接続用端子６も接続用パッド６ａとこの接続用パッド６ａ上に形成された金バンプ６ｂとで構成されている。
そしてこれら第１および第２の半導体基板は直接接合によって接着剤なしに接合される。 The first semiconductor substrate 1 and the second semiconductor substrate 4 are formed by forming connection pads 6a on the entire chip surface via rearrangement wirings 5 made of an insulating film 5a and conductor patterns 5b. The external connection terminal 6 is constituted by the pad 6a and the gold bump 6b formed on the connection pad 6a. The external connection terminal 6 formed on the cavity forming surface 1c is also composed of a connection pad 6a and a gold bump 6b formed on the connection pad 6a.
And these 1st and 2nd semiconductor substrates are joined without an adhesive agent by direct joining.

このディジタル携帯電話は、図２に示すようにベースバンド部と高周波部とで構成される。ベースバンド部は、マイク１００からの音声信号を符号化する符号化回路１０１と、ディジタル変調機１０２と、マイクロプロセサ１０３と、符号化回路１０１の出力を複号化する複号化回路２０１と、ディジタル復調機２０２と、スピーカ２００から構成される。
また高周波部は、ディジタル変調機１０２からの変調信号を受信する送信高周波回路３０１と、アンテナ共用機３０３からアンテナ３０４を介して信号を送出するとともに、アンテナから受信した信号を、アンテナ共用機３０３を介して受信高周波回路３０２に供給するように構成される。
なおマイク、スピーカは薄膜回路を用いてこの第１の半導体基板の裏面側に形成される。アンテナについても第２の半導体基板表面に形成することができる。 As shown in FIG. 2, this digital cellular phone is composed of a baseband unit and a high-frequency unit. The baseband unit includes an encoding circuit 101 that encodes an audio signal from the microphone 100, a digital modulator 102, a microprocessor 103, and a decoding circuit 201 that decodes the output of the encoding circuit 101; It comprises a digital demodulator 202 and a speaker 200.
The high-frequency unit transmits a signal from the transmission high-frequency circuit 301 that receives the modulated signal from the digital modulator 102 and the antenna duplexer 303 via the antenna 304, and also transmits the signal received from the antenna to the antenna duplexer 303. Via the receiving high-frequency circuit 302.
The microphone and the speaker are formed on the back side of the first semiconductor substrate using a thin film circuit. An antenna can also be formed on the surface of the second semiconductor substrate.

次にこの半導体装置の製造方法について説明する。
まず図３（ａ）に示すように、一導電型のシリコン基板からなる第１の半導体基板１の表面に、フォトリソグラフィおよびエッチングによりキャビティ２を形成し、所望のウェル領域を形成するとともにキャビティ２を形成し、符号化回路１０１、ディジタル変調機１０２、マイクロプロセサ１０３、複号化回路２０１、ディジタル復調機２０２とからなるベースバンド部を形成する。これらの各回路はトランジスタの組み合わせで構成されるがここでは図示を省略する。また１ｃはキャビティ形成面を示す。 Next, a method for manufacturing this semiconductor device will be described.
First, as shown in FIG. 3A, a cavity 2 is formed on the surface of a first semiconductor substrate 1 made of a silicon substrate of one conductivity type by photolithography and etching to form a desired well region and the cavity 2 , And a baseband unit including the encoding circuit 101, the digital modulator 102, the microprocessor 103, the decoding circuit 201, and the digital demodulator 202 is formed. Each of these circuits is composed of a combination of transistors, but is not shown here. Reference numeral 1c denotes a cavity forming surface.

次いで図３（ｂ）に示すように、この第１の半導体基板１のキャビティ形成面１ｃに再配列配線５（絶縁膜５ａ、導体パターン５ｂ）を形成するとともにＣＶＤ法により酸化シリコン膜３を形成する。さらにこの上層に接続用パッド６ａおよびバンプ６ｂを形成しておく。   Next, as shown in FIG. 3B, the rearrangement wiring 5 (insulating film 5a, conductor pattern 5b) is formed on the cavity forming surface 1c of the first semiconductor substrate 1, and the silicon oxide film 3 is formed by the CVD method. To do. Further, connection pads 6a and bumps 6b are formed on this upper layer.

そして図３（ｃ）に示すように、第２の半導体基板としてのシリコン基板に送信高周波回路３０１と、アンテナ共用機３０３と、受信高周波回路３０２からなる高周波部を形成し、さらにこの上層に接続用パッド６ａおよびバンプ６ｂを形成しておく。そしてこの第２の半導体基板を、第１の半導体基板のキャビティ２に、直接接合により接合する。ここでもこれらの各回路はトランジスタの組み合わせで構成されるがここでは図示を省略する。
ここで第２の半導体基板４は酸化シリコン膜３を介して、電極形成面４ｅがキャビティ２の形成されたキャビティ形成面１ｃ側に位置するように、フェースアップで配置し、図３（ｄ）に示すように、常温で直接接合する。
この後、パッシベーション膜７を形成し、図１および図２に示した半導体装置が形成される。ここでパッシベーション膜は、外部接続用端子となるバンプ６ｂが露呈するような膜厚で形成する。このとき接合に先立ち、第１および第２の半導体基板の接合面は化学的研磨により清浄化しておく。
ここで第１および第２の半導体基板の電気的接続は外部接続端子を介して行なう。 Then, as shown in FIG. 3 (c), a high-frequency unit including a transmission high-frequency circuit 301, an antenna duplexer 303, and a reception high-frequency circuit 302 is formed on a silicon substrate as a second semiconductor substrate, and further connected to this upper layer. Pads 6a and bumps 6b are formed in advance. Then, the second semiconductor substrate is bonded to the cavity 2 of the first semiconductor substrate by direct bonding. Again, each of these circuits is composed of a combination of transistors, but is not shown here.
Here, the second semiconductor substrate 4 is disposed face up so that the electrode formation surface 4e is located on the cavity formation surface 1c side where the cavity 2 is formed, with the silicon oxide film 3 interposed therebetween, and FIG. As shown in Fig. 1, bonding is performed directly at room temperature.
Thereafter, a passivation film 7 is formed, and the semiconductor device shown in FIGS. 1 and 2 is formed. Here, the passivation film is formed with a film thickness that exposes the bumps 6b serving as external connection terminals. At this time, prior to bonding, the bonding surfaces of the first and second semiconductor substrates are cleaned by chemical polishing.
Here, the first and second semiconductor substrates are electrically connected through external connection terminals.

この半導体装置は、高周波部とベースバンド部とが別の基板上に形成されているため、不要輻射によるノイズの発生を抑制することができ、また第１の半導体基板のキャビティに第２の半導体基板が直接接合により装着されているため、機械的強度も高い。   In this semiconductor device, since the high-frequency portion and the baseband portion are formed on different substrates, generation of noise due to unnecessary radiation can be suppressed, and the second semiconductor is provided in the cavity of the first semiconductor substrate. Since the substrate is mounted by direct bonding, the mechanical strength is also high.

加えて、この構造では、それぞれ素子領域および配線を形成した半導体基板を用いて接合するため熱工程を最低限に抑えて形成することができ、熱による半導体基板の劣化を防止することができる。   In addition, in this structure, bonding is performed using the semiconductor substrate on which the element region and the wiring are formed, respectively, so that the thermal process can be suppressed to a minimum, and deterioration of the semiconductor substrate due to heat can be prevented.

なおここで接続用パッド６ａとしては、膜厚２０μｍ程度の銅パターンからなる配線パターンを形成する。なおこの銅パターンの表面に形成されるバンプ６ｂは金に限定されることなく、熱圧着法に適したＮｉめっき等でもよい。この半田ボールは鉛フリー半田であることが望ましい。   Here, as the connection pad 6a, a wiring pattern made of a copper pattern with a film thickness of about 20 μm is formed. The bumps 6b formed on the surface of the copper pattern are not limited to gold, but may be Ni plating suitable for the thermocompression bonding method. The solder balls are preferably lead-free solder.

また、本実施の形態では、外部接続端子はキャビティへの装着前に形成されているため、装着後の第２の半導体基板４の表面と、キャビティ形成面とは必ずしも同一高さとなっていなくてもよい。   In the present embodiment, since the external connection terminals are formed before being mounted on the cavity, the surface of the second semiconductor substrate 4 after mounting and the cavity forming surface are not necessarily at the same height. Also good.

（実施の形態２）
前記実施の形態１では、第１の半導体基板１と第２の半導体基板４とは絶縁膜である酸化シリコン膜３を介して直接接合したが、キャビティ２の内部で一部電気的に接続するようにしてもよい。この例では、図４に断面図を示すように、酸化シリコン膜３の一部にコンタクトホールＨを形成するとともに、このコンタクトホールＨに相当する領域の第１および第２の半導体基板を高濃度にドープされたコンタクト領域（図示せず）としておくことにより、接合により良好な電気的接続も達成できるように構成される。
なおこの構造ではバンプに代えて、接続用パッド１６ａの外周までを覆うように形成した半田ボール１６ｂを形成し、外部接続端子１６を構成する。ここで接続用パッド１６と半田ボールとの間には窒化チタンＴｉＮ、金Ａｕなどの密着性層を介在させるが図示しない。
この構成により、接続に使用できる面積が増大し、絶縁が必要な箇所では絶縁し、接続を必要とする箇所ではコンタクトホールＨで構成されたコンタクト領域を介して効率よく接続することができる。 (Embodiment 2)
In the first embodiment, the first semiconductor substrate 1 and the second semiconductor substrate 4 are directly bonded via the silicon oxide film 3 that is an insulating film, but are partially electrically connected inside the cavity 2. You may do it. In this example, as shown in a cross-sectional view in FIG. 4, a contact hole H is formed in a part of the silicon oxide film 3, and the first and second semiconductor substrates in the region corresponding to the contact hole H are made highly concentrated. By being made into a contact region (not shown) doped with, it is configured so that a good electrical connection can also be achieved by bonding.
In this structure, instead of the bumps, solder balls 16b formed so as to cover the outer periphery of the connection pads 16a are formed to constitute the external connection terminals 16. Here, an adhesive layer such as titanium nitride TiN or gold Au is interposed between the connection pad 16 and the solder ball, but this is not shown.
With this configuration, an area that can be used for connection is increased, and insulation is provided at a place where insulation is required, and connection can be efficiently made via a contact region constituted by a contact hole H at a place where connection is required.

（実施の形態３）
前記実施の形態１では、第１の半導体基板１と第２の半導体基板４とは絶縁膜である酸化シリコン膜３を介して直接接合し、外部接続端子で第１および第２の半導体基板の接続を行なうようにしたが、本実施の形態では、図５および図６に示すように再配列配線で第１および第２の半導体基板を相互接続するようにしている。図５は図６のＡ−Ａ断面図である。
この例で第２の半導体基板４表面から第１の半導体基板１表面に伸長する導体パターン５Ｓによって電気的に相互接続されていることを特徴とする。また、この導体パターン５ｂ、５Ｓおよび接続用パッド１６ａは、キャビティに第２の半導体基板を搭載した後、同一工程で第１および第２の半導体基板上に形成されることを特徴とする。すなわちこの再配列配線５、少なくとも導体パターン５ｂ、５ｓ、パッシベーション膜７および外部接続端子１６は、キャビティに半導体チップを搭載した後、スパッタリング法によって形成される。そして金バンプは表面をレジスト（図示せず）被覆した状態で無電解めっきを行なうことによって形成され、さらにその外側を半田ボール１６ｂで被覆し外部接続端子１６を構成している。なお図６に示すように、第２の半導体基板上の外部接続端子１６は導体パターン１６Ｓを介して基板上の外部接続端子６と電気的に接続されており、配線長が長くなるのを防止している。 (Embodiment 3)
In the first embodiment, the first semiconductor substrate 1 and the second semiconductor substrate 4 are directly bonded via the silicon oxide film 3 which is an insulating film, and the first and second semiconductor substrates are connected by the external connection terminals. In this embodiment, as shown in FIGS. 5 and 6, the first and second semiconductor substrates are interconnected by the rearrangement wiring. 5 is a cross-sectional view taken along the line AA in FIG.
In this example, the second semiconductor substrate 4 is electrically interconnected by a conductor pattern 5S extending from the surface of the second semiconductor substrate 4 to the surface of the first semiconductor substrate 1. The conductor patterns 5b and 5S and the connection pads 16a are formed on the first and second semiconductor substrates in the same process after the second semiconductor substrate is mounted in the cavity. That is, the rearrangement wiring 5, at least the conductor patterns 5b and 5s, the passivation film 7, and the external connection terminals 16 are formed by sputtering after mounting a semiconductor chip in the cavity. The gold bumps are formed by performing electroless plating in a state where the surface is coated with a resist (not shown), and the outside is covered with solder balls 16b to constitute the external connection terminals 16. As shown in FIG. 6, the external connection terminal 16 on the second semiconductor substrate is electrically connected to the external connection terminal 6 on the substrate through the conductor pattern 16S, thereby preventing the wiring length from becoming long. is doing.

次にこの半導体装置の製造方法について説明する。
まず図７（ａ）に示すように、キャビティ２を持つ第１の半導体基板１を用意する。
次いで図７（ｂ）に示すように、キャビティ２に、第２の半導体チップ基板４を搭載する。ここでは酸化シリコン膜３を介して、電極形成面４ｅがキャビティ２の形成されたキャビティ形成面１ｃ側に位置するように、第２の半導体基板４を直接接合により接合固定する。
この後図７（ｃ）に示すように、表面をエッチバックにより平坦化し、第１および第２の半導体基板表面が同一面となるようにし、所望の半導体プロセスを経てトランジスタなどの回路素子を形成する。さらにＣＶＤ法により表面全体に酸化シリコン膜５ａを形成し、フォトリソグラフィによってスルーホールと形成するとともに導体パターン５ｂ、５Ｓを形成して再配列配線５を形成する。そしてパッシベーション膜７の形成を経て、インクジェット法により外部接続端子１６を形成する。また相互接続用の導体パターン１６Ｓを含むように形成され、外部接続端子の形成される領域以外はポリイミド樹脂等の絶縁性樹脂で被覆する。
そして図７（ｄ）に示すように、更にこの接続用パッド上に金バンプを形成し、図５及び６に示したような半導体装置が形成される。図５では金バンプ上に半田ボール１６ｂを形成している。 Next, a method for manufacturing this semiconductor device will be described.
First, as shown in FIG. 7A, a first semiconductor substrate 1 having a cavity 2 is prepared.
Next, as shown in FIG. 7B, the second semiconductor chip substrate 4 is mounted in the cavity 2. Here, the second semiconductor substrate 4 is bonded and fixed by direct bonding so that the electrode forming surface 4e is located on the cavity forming surface 1c side where the cavity 2 is formed, with the silicon oxide film 3 interposed therebetween.
Thereafter, as shown in FIG. 7C, the surface is flattened by etch back so that the surfaces of the first and second semiconductor substrates are flush with each other, and a circuit element such as a transistor is formed through a desired semiconductor process. To do. Further, a silicon oxide film 5a is formed on the entire surface by a CVD method, through holes are formed by photolithography, and conductor patterns 5b and 5S are formed to form rearranged wirings 5. Then, after forming the passivation film 7, the external connection terminals 16 are formed by the ink jet method. Further, it is formed so as to include the interconnecting conductor pattern 16S, and the region other than the region where the external connection terminal is formed is covered with an insulating resin such as polyimide resin.
Then, as shown in FIG. 7D, gold bumps are further formed on the connection pads to form the semiconductor device as shown in FIGS. In FIG. 5, solder balls 16b are formed on the gold bumps.

この方法によれば、第１および第２の半導体基板を接合後、素子領域を形成しているため、位置あわせが不要であり、相対的な位置精度の向上をはかることができる。また、導体パターンを形成すると共に、この上にバンプを形成しているため第１および第２の半導体基板に対し同時に素子領域および外部接続端子を形成することができる。また、第１および第２の半導体基板内部での相互接続も可能であるため配線の自由度が高い。
また、平坦面上に成膜することによって形成されるため、ファインピッチでの形成が容易に可能となる。 According to this method, since the element region is formed after bonding the first and second semiconductor substrates, alignment is not necessary, and relative positional accuracy can be improved. Further, since the conductor pattern is formed and the bump is formed thereon, the element region and the external connection terminal can be simultaneously formed on the first and second semiconductor substrates. Further, since the interconnections within the first and second semiconductor substrates are possible, the degree of freedom of wiring is high.
Further, since it is formed by forming a film on a flat surface, it can be easily formed at a fine pitch.

この場合も、深さ方向の配線距離が短くてすむため、配線長の総和が低減され、寄生抵抗の低減を図ることができる。   Also in this case, since the wiring distance in the depth direction can be short, the total wiring length can be reduced and the parasitic resistance can be reduced.

また前記外部接続端子が、基板上にも形成されるため、外部接続端子形成面が増大し、端子間距離の増大を図ることが可能となる。   Further, since the external connection terminals are also formed on the substrate, the external connection terminal formation surface is increased, and the distance between the terminals can be increased.

（実施の形態４）
前記実施の形態１乃至３では、キャビティ２内に第２の半導体基板を間隙なしに装着したが、本実施の形態では図８に示すように、外周に隙間Ｃを持つようにしてもよい。
キャビティの構造および半導体基板の構造は前記実施の形態１乃至３と同様であるが、キャビティ２への第２の半導体基板４の固定は絶縁性樹脂を介して接合している。他部については実施の形態１の半導体装置と同様に形成される。
これにより、浮遊容量を低減することができる。
なお前記実施の形態１乃至４において第１および第２の半導体基板はシリコンであってかつそれぞれの機能に応じた不純物濃度を用いればよく、不純物濃度の異なるものを用いることにより、形成する回路構成に応じた比抵抗を持つものをベースにすることができるため、構造の簡略化を図ることができる。 (Embodiment 4)
In the first to third embodiments, the second semiconductor substrate is mounted in the cavity 2 without a gap. However, in this embodiment, a gap C may be provided on the outer periphery as shown in FIG.
The structure of the cavity and the structure of the semiconductor substrate are the same as those in the first to third embodiments. However, the second semiconductor substrate 4 is fixed to the cavity 2 through an insulating resin. Other portions are formed in the same manner as the semiconductor device of the first embodiment.
Thereby, stray capacitance can be reduced.
Note that in the first to fourth embodiments, the first and second semiconductor substrates are made of silicon, and impurity concentrations corresponding to the respective functions may be used. Circuit structures formed by using different impurity concentrations are used. Therefore, the structure can be simplified.

（実施の形態５）
さらにまた、図９に示すように、第１および第２の半導体基板１，４に絶縁膜を介在させることなく直接接合してもよい。
この場合、接合部の不純物濃度を低くしておくのが望ましい。 (Embodiment 5)
Furthermore, as shown in FIG. 9, the first and second semiconductor substrates 1 and 4 may be directly joined without interposing an insulating film.
In this case, it is desirable to reduce the impurity concentration of the junction.

（実施の形態６）
さらにまた、図１０に示すように、第１および第２の半導体基板１，４に絶縁膜を介在させることなく直接接合し、かつｐｎ接合を形成するようにしてもよい。
これにより、第１および第２の半導体基板間には第１の半導体基板のキャビティ内壁に形成されたｎ層２３ｎと第２の半導体基板の外壁に形成されたｐ層２３ｐとでｐｎ接合が形成されダイオードが形成された状態となる。
また、この構成によれば第１および第２の半導体基板１，４の絶縁分離が可能となる効果がある。 (Embodiment 6)
Furthermore, as shown in FIG. 10, the first and second semiconductor substrates 1 and 4 may be directly joined without interposing an insulating film, and a pn junction may be formed.
As a result, a pn junction is formed between the first and second semiconductor substrates by the n layer 23n formed on the cavity inner wall of the first semiconductor substrate and the p layer 23p formed on the outer wall of the second semiconductor substrate. As a result, a diode is formed.
Further, according to this configuration, there is an effect that the first and second semiconductor substrates 1 and 4 can be insulated and separated.

（実施の形態７）
さらにまた、前記実施の形態では、基板単位の製造方法について説明したが、第１の半導体基板をウェーハレベルで使用し、外部接続端子を形成した後に個々の素子に分割してもよい。図１１に説明図を示すように、シリコンウェーハ１１に形成されたキャビティ２にそれぞれ第２の半導体基板４を装着し、諸工程を経て外部接続端子６を形成したのち、ダイシングラインＤＬに沿ってダイシングし半導体装置を形成するものである。 (Embodiment 7)
Furthermore, in the above-described embodiment, the substrate unit manufacturing method has been described. However, the first semiconductor substrate may be used at the wafer level, and the external connection terminals may be formed and then divided into individual elements. As shown in FIG. 11, the second semiconductor substrate 4 is mounted in each cavity 2 formed in the silicon wafer 11, the external connection terminals 6 are formed through various processes, and then along the dicing line DL. The semiconductor device is formed by dicing.

すなわち、まず図１２（ａ）に示すように、シリコンウェーハ１１表面にフォトリソグラフィによりキャビティ形成用のマスクパターンＲ１を形成し、これをマスクとしてエッチングすることにより、キャビティ２を形成する。   That is, first, as shown in FIG. 12A, a cavity forming mask pattern R1 is formed on the surface of the silicon wafer 11 by photolithography, and etching is performed using the mask pattern R1 as a mask to form the cavity 2.

そして、図１２（ｂ）に示すように所望の素子領域（図示せず）を形成した後、キャビティ内壁に酸化シリコン膜３を形成する。   Then, after forming a desired element region (not shown) as shown in FIG. 12B, a silicon oxide film 3 is formed on the inner wall of the cavity.

そして、図１２（ｃ）に示すように、所望の素子領域を形成した第２の半導体基板４としてのシリコン基板を、キャビティ内壁に直接接合する。ここで第２の半導体基板４は支持テープ２０によって一体的に支持されており、これにより位置あわせが容易である。   Then, as shown in FIG. 12C, a silicon substrate as the second semiconductor substrate 4 in which a desired element region is formed is directly bonded to the cavity inner wall. Here, the second semiconductor substrate 4 is integrally supported by the support tape 20, which facilitates alignment.

さらに、図１２（ｄ）に示すように、支持テープ２０を除去する。
そして、図１３（ｅ）に示すように、所定の深さまで水素イオンの注入を行い、アモルファス領域２１を形成する。 Further, as shown in FIG. 12 (d), the support tape 20 is removed.
Then, as shown in FIG. 13E, hydrogen ions are implanted to a predetermined depth to form an amorphous region 21.

この後、図１３（ｆ）に示すように、酸化雰囲気中で熱処理を行い、アモルファス領域２１を酸化領域２２とする。
そして、図１３（ｇ）に示すように、へき開により、酸化領域２２を剥離除去する。 Thereafter, as shown in FIG. 13 (f), heat treatment is performed in an oxidizing atmosphere so that the amorphous region 21 becomes an oxidized region 22.
Then, as shown in FIG. 13G, the oxidized region 22 is peeled and removed by cleavage.

このようにして平坦化のなされた基板表面に酸化シリコン膜２５ａを形成し、フォトリソグラフィによりコンタクトホールを形成した後、アルミニウムパターンからなる配線層２５ｂを形成する。
そして、図１３（ｈ）に示すように、パッシベーション膜を７形成した後、接続用パッド２６ａを介して半田ボール２６ｂを形成しこれを外部接続端子２６とする。
最後に、ダイシングラインＤＬに沿ってダイシングすることにより個々の半導体装置に分離する。
このようにして精度よく不要輻射の抑制されたディジタル携帯電話を形成することができる。
この方法によれば、ウェーハレベルで接合されるため、位置あわせが容易でかつ一括形成であるため通常のウェーハプロセスを用いて製造することができ、製造が極めて容易である。 A silicon oxide film 25a is formed on the surface of the substrate thus flattened, contact holes are formed by photolithography, and then a wiring layer 25b made of an aluminum pattern is formed.
Then, as shown in FIG. 13H, after forming a passivation film 7, a solder ball 26 b is formed via a connection pad 26 a, and this is used as an external connection terminal 26.
Finally, the individual semiconductor devices are separated by dicing along dicing lines DL.
In this way, a digital mobile phone in which unnecessary radiation is suppressed with high accuracy can be formed.
According to this method, since bonding is performed at the wafer level, positioning is easy and batch formation is performed, so that it can be manufactured using a normal wafer process, and manufacturing is extremely easy.

（実施の形態８）
さらにまた、前記実施の形態では、第１の半導体基板のみをウェーハレベルで形成したが、本実施の形態では第２の半導体基板についてもウェーハレベルで接合する方法について説明する。すなわち図１４に概要説明図を示すように、キャビティ２を形成するとともにベースバンド部の回路を形成した第１のシリコンウェーハ１１と、高周波回路部を構成する素子領域を形成するとともにこの部分を突出せしめるように溝部Ｔを形成した第２のシリコンウェーハ３２を接合し、この後ＣＭＰにより第２のシリコンウェーハ側を研磨して、第１のシリコンウェーハ１１のキャビティ形成面１１ｃを露呈せしめるようにしたもので、その後は前記実施の形態７の図１３（ｄ）以降と同様に形成する。 (Embodiment 8)
Furthermore, in the above-described embodiment, only the first semiconductor substrate is formed at the wafer level. In this embodiment, a method for bonding the second semiconductor substrate also at the wafer level will be described. That is, as shown in the schematic explanatory diagram in FIG. 14, the first silicon wafer 11 in which the cavity 2 is formed and the circuit of the baseband part is formed, and the element region that constitutes the high-frequency circuit part is formed, and this part protrudes. The second silicon wafer 32 having the groove T formed thereon is bonded so as to be squeezed, and then the second silicon wafer side is polished by CMP to expose the cavity forming surface 11c of the first silicon wafer 11. After that, it is formed in the same manner as in FIG.

すなわち、第１の半導体基板については前記実施の形態７と同様に形成する。すなわちまず図１５（ａ）に示すように、第１のシリコンウェーハ１１表面にフォトリソグラフィによりキャビティ形成用のマスクパターンＲ１を形成し、これをマスクとしてエッチングすることによりキャビティ２を形成する。   That is, the first semiconductor substrate is formed in the same manner as in the seventh embodiment. That is, first, as shown in FIG. 15A, a cavity forming mask pattern R1 is formed on the surface of the first silicon wafer 11 by photolithography, and the cavity 2 is formed by etching using this as a mask.

そして、図１５（ｂ）に示すように所望の素子領域（図示せず）を形成した後、キャビティ内壁に酸化シリコン膜３を形成する。   Then, after forming a desired element region (not shown) as shown in FIG. 15B, a silicon oxide film 3 is formed on the inner wall of the cavity.

そして、図１５（ｃ）に示すように、第２のシリコンウェーハ３１表面に通常の半導体プロセスにより所望の素子領域を形成した後、前記マスクパターンＲ１とは反転パターンである第２のマスクパターンＲ２を形成しこれをマスクとしてエッチングを行い、キャビティに相当する領域に凸部３２を構成する。   Then, as shown in FIG. 15C, after a desired element region is formed on the surface of the second silicon wafer 31 by a normal semiconductor process, a second mask pattern R2 that is an inverted pattern from the mask pattern R1 is formed. Then, etching is performed using this as a mask to form the convex portion 32 in a region corresponding to the cavity.

この後、図１５（ｄ）に示すように、第１のシリコンウェーハ１１のキャビティ２に第２のシリコンウェーハ３１の凸部３２が符合するように、位置決めし、凸部３２を、キャビティ２内壁に直接接合する。   Thereafter, as shown in FIG. 15 (d), the convex portion 32 of the second silicon wafer 31 is positioned so that the convex portion 32 of the second silicon wafer 31 coincides with the cavity 2 of the first silicon wafer 11. Join directly to.

さらに、図１６（ｅ）に示すように、第２のシリコンウェーハ３１側からＣＭＰを行い、キャビティ２形成面１Ｃと第２の半導体基板４の表面とが同一面となるように平坦化する。   Further, as shown in FIG. 16E, CMP is performed from the second silicon wafer 31 side, and the cavity 2 formation surface 1C and the surface of the second semiconductor substrate 4 are planarized so as to be the same surface.

この後、図１６（ｆ）に示すように、前記実施の形態８と同様に再配列配線および外部接続端子を形成し、最後に、ダイシングラインＤＬに沿ってダイシングすることにより個々の半導体装置に分離する。
このようにして精度よく不要輻射の抑制されたディジタル携帯電話を形成することができる。
この方法によれば、ウェーハレベルで接合されるため、位置あわせが容易でかつ一括形成であるため通常のウェーハプロセスを用いて外部接続端子の形成まで製造することができ、製造が極めて容易である。
また、第２の半導体基板は接合後に平坦化されるため均一な表面を得ることができる上、より薄型化が可能となる。 Thereafter, as shown in FIG. 16F, rearrangement wirings and external connection terminals are formed in the same manner as in the eighth embodiment, and finally, dicing along dicing lines DL is performed for each semiconductor device. To separate.
In this way, a digital mobile phone in which unnecessary radiation is suppressed with high accuracy can be formed.
According to this method, since bonding is performed at the wafer level, positioning is easy and batch formation enables manufacturing up to the formation of external connection terminals using a normal wafer process, which is extremely easy to manufacture. .
In addition, since the second semiconductor substrate is planarized after bonding, a uniform surface can be obtained and the thickness can be further reduced.

この場合、スクリーン印刷法では、半導体チップ表面と基板のキャビティ形成面とは同一表面であるのが望ましいが、段差がある場合はインクジェット法などを用いるようにすれば、高精度の導電性パターンが形成でき、電極パッドあるいはバンプの形成も可能となる。   In this case, in the screen printing method, it is desirable that the surface of the semiconductor chip and the cavity forming surface of the substrate are the same surface. However, if there is a step, an inkjet method or the like can be used to form a highly accurate conductive pattern. It is possible to form electrode pads or bumps.

（実施の形態９）
本実施の形態では、図１７に示すように、第２の半導体基板をＳＯＩ基板で構成してもよい。この場合ＳＯＩ基板の表面側は再配列配線で相互接続し、裏面側は第１の半導体基板とキャビティ内で接続するようにしてもよい。
ＳＯＩ基板４０は表面に酸化シリコン膜４３の形成されたベース層としてのシリコン基板４１上に酸化シリコン膜４３を挟んでシリコン基板４２を直接接合してなるものである。
これにより、接続面積が増大し、パッドを大きくすることにより接続が確実となる。 (Embodiment 9)
In this embodiment mode, as shown in FIG. 17, the second semiconductor substrate may be an SOI substrate. In this case, the front surface side of the SOI substrate may be interconnected by rearrangement wiring, and the back surface side may be connected to the first semiconductor substrate within the cavity.
The SOI substrate 40 is formed by directly bonding a silicon substrate 42 with a silicon oxide film 43 interposed therebetween on a silicon substrate 41 as a base layer having a silicon oxide film 43 formed on the surface.
Thereby, a connection area increases and a connection is ensured by enlarging a pad.

（実施の形態１０）
前記実施の形態１乃至９では、１枚の基板に１枚の半導体チップを搭載する例について説明したが、本実施の形態では、図１８に示すように、第１の半導体基板１に２つのキャビティ２ａ、２ｂを形成し、第１及び第２の半導体チップ４ａ、４ｂをフェースアップで形成し、同様に導体パターン及び外部接続端子６を形成したものである。 (Embodiment 10)
In the first to ninth embodiments, an example in which one semiconductor chip is mounted on one substrate has been described. However, in this embodiment, two semiconductor chips 1 are provided on the first semiconductor substrate 1 as shown in FIG. The cavities 2a and 2b are formed, the first and second semiconductor chips 4a and 4b are formed face up, and the conductor pattern and the external connection terminal 6 are formed in the same manner.

製造に際しては前記実施の形態１及び２と同様に形成されるが、導体パターンを第１の半導体チップ上から第２の半導体チップ上に至るように一体的に形成するとともに保護膜を兼ねた絶縁膜を一体形成することにより、２つの半導体チップの電気的接続が同時に可能となる。またマザーボード上で配線に要する面積も少なくかつ確実な接続が可能となる。
この構造では、２つの半導体チップの搭載位置がキャビティによって規定されているため、位置ずれも少なく信頼性の高い実装が可能となる。 In manufacturing, it is formed in the same manner as in the first and second embodiments, but the conductor pattern is integrally formed so as to extend from the first semiconductor chip to the second semiconductor chip, and also serves as a protective film. By integrally forming the film, two semiconductor chips can be electrically connected simultaneously. Further, the area required for wiring on the mother board is small and a reliable connection is possible.
In this structure, the mounting position of the two semiconductor chips is defined by the cavity, so that mounting with high reliability is possible with little positional deviation.

（実施の形態１１）
前記実施の形態１０では、第１及び第２の半導体チップを第１の半導体基板の一方の面に並置したが、図１９に示すように本実施の形態では背中合わせに第１及び第２の半導体チップ４ａ、４ｂを搭載している。
この場合は、基板の側壁をとおるように、インクジェットなどにより導体パターンを形成し両者を電気的に接続することも可能である。
また、この一方の面側には半導体チップを搭載し、他方の面側にはコンデンサや抵抗などのチップ部品、制御ＭＣＭ等を搭載するようにしてもよい。 (Embodiment 11)
In the tenth embodiment, the first and second semiconductor chips are juxtaposed on one surface of the first semiconductor substrate. However, in the present embodiment, the first and second semiconductor chips are back to back as shown in FIG. Chips 4a and 4b are mounted.
In this case, it is also possible to form a conductor pattern by ink jet or the like so as to cross the side wall of the substrate and to electrically connect them.
Further, a semiconductor chip may be mounted on the one surface side, and a chip component such as a capacitor or a resistor, a control MCM, or the like may be mounted on the other surface side.

この構成により、線膨張率を半導体チップに近いものとすることができ、熱膨張率の差により、温度変化時にクラックが発生したりすることなく、温度変化に対しても信頼性の高いものとなる。   With this configuration, the linear expansion coefficient can be made close to that of a semiconductor chip, and due to the difference in thermal expansion coefficient, cracks do not occur at the time of temperature change, and it is highly reliable for temperature change. Become.

また、ＣＶＤ酸化膜および配線パターンなどで構成される再配列配線の形成を含めて薄膜プロセスで一体的に形成できるため、製造が容易である。   Further, since it can be integrally formed by a thin film process including the formation of rearranged wiring composed of a CVD oxide film and a wiring pattern, it is easy to manufacture.

さらにまた、この場合、半導体基板内に不純物拡散層を形成することにより、貫通孔を形成することなく基板のキャビティ形成面側と対向面側あるいは他の面を貫通する導体部を形成することが容易となる。さらにまたキャビティの形成が通常のエッチング工程により容易に制御可能である。   Furthermore, in this case, by forming an impurity diffusion layer in the semiconductor substrate, it is possible to form a conductor portion that penetrates the cavity forming surface side and the opposite surface side or other surface of the substrate without forming a through hole. It becomes easy. Furthermore, the formation of the cavity can be easily controlled by a normal etching process.

またフォトリソグラフィを用いて容易に微細かつ高精度のキャビティ寸法制御が可能である上、再配列配線を含めた配線構造及び外部接続端子が極めて高精度に形成可能であるため微細化が容易となる。   In addition, fine and highly accurate cavity dimension control can be easily performed by using photolithography, and the wiring structure including the rearranged wiring and the external connection terminal can be formed with extremely high precision, so that miniaturization is facilitated. .

そしてまた、信号処理回路などの能動素子の集積された半導体基板を用いるようにすれば、チップ部品の搭載が不要でかつ小型化薄型化が可能となる。しかも実装後ダイシングすることにより個々の部品に分割するいわゆるＣＳＰ（チップサイズパッケージ化）工程での形成が容易となる。この場合はダイシング後にバンプや半田ボールなどの端子を形成するようにしてもよい。   Further, if a semiconductor substrate on which active elements such as a signal processing circuit are integrated is used, it is not necessary to mount a chip component, and the size and thickness can be reduced. In addition, it is easy to form in a so-called CSP (chip size packaging) process for dividing into individual parts by dicing after mounting. In this case, terminals such as bumps and solder balls may be formed after dicing.

ここで用いられる半導体チップとしては、バイポーラトランジスタ、ＦＥＴ、ダイオード、ＩＣなど、シリコン基板やガリウム砒素などの化合半導体基板を用いたデバイスに適用可能である。
また、リチウムニオベート、リチウムタンタレートなどの単結晶圧電基板を用いてもよい。 The semiconductor chip used here can be applied to a device using a compound semiconductor substrate such as a silicon substrate or gallium arsenide, such as a bipolar transistor, FET, diode, or IC.
A single crystal piezoelectric substrate such as lithium niobate or lithium tantalate may be used.

また導電性基板や半導体基板を用いる場合には、前述したように、キャビティ内壁に酸化膜を形成するなど、表面を絶縁化しておくのが望ましい。   When using a conductive substrate or a semiconductor substrate, it is desirable to insulate the surface, for example, by forming an oxide film on the inner wall of the cavity as described above.

また、半導体基板表面は通常酸化シリコン膜、窒化シリコン膜などで被覆されているが、ベアで用いられるため、保護のためにこの上層を封止樹脂で全面コーティングしておくようにするのが望ましい。   Further, the surface of the semiconductor substrate is usually covered with a silicon oxide film, a silicon nitride film, etc., but since it is used as a bare, it is desirable to coat the entire upper layer with a sealing resin for protection. .

また、パッド材料としてはＣｕ，Ａｕ，Ａｇ，Ａｌ，Ｃｕ／Ｎｉ／Ａｕ等が適用可能である。更にバンプ材料としては半田層、Ａｕめっき、Ａｕスタッドバンプ、Ｎｉ、Ｃｕボールなどが適用可能である。   Moreover, Cu, Au, Ag, Al, Cu / Ni / Au, etc. are applicable as a pad material. Furthermore, solder layers, Au plating, Au stud bumps, Ni, Cu balls, etc. can be applied as bump materials.

本発明の半導体装置は、不要輻射を低減し、小型でかつ機械的強度が高く、高精度のパターン形成が可能であることから、携帯電話やノートパソコンのみならず、種々の電子機器への適用が可能である。   Since the semiconductor device of the present invention reduces unnecessary radiation, is compact, has high mechanical strength, and enables high-precision pattern formation, it can be applied not only to mobile phones and laptop computers but also to various electronic devices. Is possible.

本発明の実施の形態１における半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device in Embodiment 1 of this invention. 本発明の実施の形態１の半導体装置の回路構成を示す図である。It is a figure which shows the circuit structure of the semiconductor device of Embodiment 1 of this invention. 本発明の実施の形態１の半導体装置の製造方法を示す工程断面図である。It is process sectional drawing which shows the manufacturing method of the semiconductor device of Embodiment 1 of this invention. 本発明の実施の形態２における半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device in Embodiment 2 of this invention. 本発明の実施の形態３の半導体装置の断面図である。It is sectional drawing of the semiconductor device of Embodiment 3 of this invention. 本発明の実施の形態３の半導体装置の下視図である。It is a bottom view of the semiconductor device of Embodiment 3 of this invention. 本発明の実施の形態３の半導体装置の製造方法を示す工程断面図である。It is process sectional drawing which shows the manufacturing method of the semiconductor device of Embodiment 3 of this invention. 本発明の第４の実施の形態における半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device in the 4th Embodiment of this invention. 本発明の実施の形態５の半導体装置示す断面図である。It is sectional drawing which shows the semiconductor device of Embodiment 5 of this invention. 本発明の実施の形態６の半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device of Embodiment 6 of this invention. 本発明の実施の形態７の半導体装置の製造方法の概念を示す説明図である。It is explanatory drawing which shows the concept of the manufacturing method of the semiconductor device of Embodiment 7 of this invention. 本発明の実施の形態７の半導体装置の製造工程図である。It is a manufacturing process figure of the semiconductor device of Embodiment 7 of this invention. 本発明の実施の形態７の半導体装置の製造工程図である。It is a manufacturing process figure of the semiconductor device of Embodiment 7 of this invention. 本発明の実施の形態８の半導体装置の製造方法の概念を示す説明図である。It is explanatory drawing which shows the concept of the manufacturing method of the semiconductor device of Embodiment 8 of this invention. 本発明の実施の形態８の半導体装置の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the semiconductor device of Embodiment 8 of this invention. 本発明の実施の形態８の半導体装置の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the semiconductor device of Embodiment 8 of this invention. 本発明の実施の形態９の半導体装置を示す要部説明図である。It is principal part explanatory drawing which shows the semiconductor device of Embodiment 9 of this invention. 本発明の実施の形態１０の半導体装置を示す要部説明図である。It is principal part explanatory drawing which shows the semiconductor device of Embodiment 10 of this invention. 本発明の実施の形態１１の半導体装置を示す要部説明図である。It is principal part explanatory drawing which shows the semiconductor device of Embodiment 11 of this invention.

符号の説明Explanation of symbols

１ 第１の半導体基板
２ キャビティ
３ 酸化シリコン膜
４ 第２の半導体基板
５ 再配列配線
６ 外部接続端子
１ｃ キャビティ形成面
４ｅ 電極形成面 DESCRIPTION OF SYMBOLS 1 1st semiconductor substrate 2 Cavity 3 Silicon oxide film 4 2nd semiconductor substrate 5 Rearrangement wiring 6 External connection terminal 1c Cavity formation surface 4e Electrode formation surface

Claims (8)

素子領域が形成され、表面にキャビティを有する第１の半導体基板と、
素子領域が形成され、前記キャビティ内に収納された第２の半導体基板と、
前記第１または第２の半導体基板に接続された外部接続端子と、を備え、
前記キャビティの内壁全体が、コンタクトホールを有する絶縁層を介して、前記第２の半導体基板に当接しており、
前記第２の半導体基板は、前記第１の半導体基板の前記キャビティの内壁に、接着剤なしに直接接合によって接合され、
前記第１および第２の半導体基板は、前記コンタクトホールに相当する領域に高濃度ドープされたコンタクト領域を有し、
前記第２の半導体基板の電極形成面が前記第１の半導体基板のキャビティ形成面と同一面側に位置していることを特徴とする半導体装置。 A first semiconductor substrate having an element region formed therein and having a cavity on the surface;
A second semiconductor substrate having an element region formed therein and housed in the cavity;
An external connection terminal connected to the first or second semiconductor substrate,
The entire inner wall of the cavity is in contact with the second semiconductor substrate via an insulating layer having a contact hole,
The second semiconductor substrate is bonded to the inner wall of the cavity of the first semiconductor substrate by direct bonding without an adhesive ,
First and second semiconductor substrates prior SL has a highly doped contact regions in the region corresponding to the contact hole,
An electrode forming surface of the second semiconductor substrate is located on the same side as a cavity forming surface of the first semiconductor substrate. 請求項１に記載の半導体装置であって、
前記第１の半導体基板の前記キャビティ形成面と、前記第２の半導体基板の表面とは同一面上にある半導体装置。 The semiconductor device according to claim 1 ,
The semiconductor device in which the cavity forming surface of the first semiconductor substrate and the surface of the second semiconductor substrate are on the same plane. 請求項１又は２に記載の半導体装置において、
前記外部接続端子は、前記第１の半導体基板の前記キャビティ形成面と、前記第２の半導体基板の表面とに形成された突出部である半導体装置。 The semiconductor device according to claim 1 or 2 ,
The external connection terminal is a semiconductor device which is a protrusion formed on the cavity forming surface of the first semiconductor substrate and the surface of the second semiconductor substrate. 請求項３に記載の半導体装置において、
前記外部接続端子は、前記第２の半導体基板から前記第１の半導体基板の前記キャビティ形成面に伸長する導体パターンを介して前記第１の半導体基板上に導出されたものを含む半導体装置。 The semiconductor device according to claim 3 .
The semiconductor device including the external connection terminal led out on the first semiconductor substrate through a conductor pattern extending from the second semiconductor substrate to the cavity forming surface of the first semiconductor substrate. 請求項４に記載の半導体装置において、
前記外部接続端子は、前記第２の半導体基板から前記第１の半導体基板の前記キャビティ形成面に伸長する導体パターンを含む再配列配線部を介して導出される半導体装置。 The semiconductor device according to claim 4 ,
The external connection terminal is led out through a rearrangement wiring part including a conductor pattern extending from the second semiconductor substrate to the cavity forming surface of the first semiconductor substrate. 請求項１乃至５のいずれか１項に記載の半導体装置において、
前記第１および第２の半導体基板はいずれも同一組成をもつ基板である半導体装置。 The semiconductor device according to any one of claims 1 to 5 ,
A semiconductor device in which the first and second semiconductor substrates are substrates having the same composition. 請求項６に記載の半導体装置において、
前記第１および第２の半導体基板はいずれもシリコンで構成される半導体装置。 The semiconductor device according to claim 6 .
Both the first and second semiconductor substrates are semiconductor devices made of silicon. 請求項６または７に記載の半導体装置において、
前記第１および第２の半導体基板は不純物濃度が異なる基板である半導体装置。 The semiconductor device according to claim 6 or 7 ,
The semiconductor device, wherein the first and second semiconductor substrates are substrates having different impurity concentrations.
JP2004234687A 2004-08-11 2004-08-11 Semiconductor device Expired - Fee Related JP5027990B2 (en)

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