JP5027280B2 - 環境ガスセンサー及びその製造方法 - Google Patents
環境ガスセンサー及びその製造方法 Download PDFInfo
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- 230000007613 environmental effect Effects 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000007789 gas Substances 0.000 claims description 78
- 239000002121 nanofiber Substances 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 40
- 239000002131 composite material Substances 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
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- 230000005855 radiation Effects 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- -1 Sb 2 O 3 Inorganic materials 0.000 claims description 5
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- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
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- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
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- 239000010703 silicon Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000012702 metal oxide precursor Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 230000009257 reactivity Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 description 15
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- 229910052707 ruthenium Inorganic materials 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001523 electrospinning Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
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- 239000002086 nanomaterial Substances 0.000 description 2
- 229920001432 poly(L-lactide) Polymers 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
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- 238000011160 research Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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- 239000002360 explosive Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
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- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- 238000006722 reduction reaction Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Electrochemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
図1は、本発明による環境ガスセンサーの斜視図である。
図2を参照すれば、本発明による環境ガスセンサーの製造方法は、絶縁基板上に金属電極を形成する段階S11と、前記金属電極上に電気放射(electrospinning)を通じて異種のナノ繊維を互いに直交するように整列させる段階S12と、前記整列された異種のナノ繊維を熱処理し、感知層を形成する段階S13とを含む。
0.5mm厚さの石英基板上に一対の金属電極(Pt)を互いに対向するように100nmの厚さで形成し、次いで、他の一対の金属電極(Pt)を互いに対向するように100nmの厚さで形成した。次に、金属酸化物ZnO前駆体とポリビニルフェノール(poly(4-vinyl phenol)、以下、PVPという)ポリマー、エタノールを5:3:1の重量比で秤量して混合し、60℃の温度で24時間撹拌し、1200cpsの粘度を有するZnO/PVP複合溶液を用意した。次に、ZnO/PVPポリマー複合溶液を電気放射装置を通じて放射し、一対の金属電極上に一種のナノ繊維を整列した。次に、金属酸化物NiO前駆体、ポリビニルフェノールポリマー及びエタノールを5:3:1の重量比で秤量して混合し、60℃の温度で24時間撹拌し、1200cpsの粘度を有するNiO/PVP複合溶液を用意した。次に、NiO/PVPポリマー複合溶液を電気放射装置を通じて放射し、他の一対の金属電極上に前記一対の金属電極上に整列された一種のナノ繊維と互いに直交するように他の種のナノ繊維を整列した。前記環境ガスセンサーを製造するための異種のナノ繊維を直交するように形成した表面を光学顕微鏡で撮影し、その結果を図3に示した。また、図3から、異種のナノ繊維が直交して形成されることを確認することができた。
200 金属電極
300 感知層
Claims (15)
- 絶縁基板と、
前記絶縁基板上に互いに対向するように形成された二対の金属電極と、
前記互いに対向する二対の金属電極上に各々異種のナノ繊維が互いに直交するように整列された感知層と、
を含む環境ガスセンサー。 - 前記絶縁基板は、酸化物単結晶基板、セラミック基板、シリコン半導体基板、ガラス基板、基板の裏面または上部にマイクロヒーターが含まれた絶縁基板、マイクロヒーターが内蔵されたマイクロマシン構造体基板よりなる群から選択されることを特徴とする請求項1に記載の環境ガスセンサー。
- 前記絶縁基板は、0.1乃至1mmの厚さを有することを特徴とする請求項1に記載の環境ガスセンサー。
- 前記金属電極は、白金(Pt)、パラジウム(Pd)、金(Au)、銀(Ag)、アルミニウム(Al)、ニッケル(Ni)、チタニウム(Ti)、銅(Cu)、クロム(Cr)、錫(Sn)、モリブデン(Mo)及びインジウム(In)よりなる群から選択される1つ以上を含むことを特徴とする請求項1に記載の環境ガスセンサー。
- 前記金属電極の厚さは、10nm乃至1000nmであることを特徴とする請求項1に記載の環境ガスセンサー。
- 前記異種のナノ繊維は、各々異なる特定のガスに高反応性を有する有機または無機半導体ナノ繊維から選択されることを特徴とする請求項1に記載の環境ガスセンサー。
- 前記異種のナノ繊維のうち一種は、n−型酸化物半導体化合物であり、他の種は、p−型酸化物半導体化合物であることを特徴とする請求項6に記載の環境ガスセンサー。
- n−型酸化物半導体化合物は、ABO3型ペロブスカイト酸化物(BaTiO3、金属ドーピングされたBaTiO3、SrTiO3、BaSnO3)、MgO、CaO、TiO2、ZrO2、V2O5、Nb2O5、Ta2O5、MoO3、WO3、ZnO、Al2O3、Ga2O3、In2O3、及びSnO2よりなる群から1つ以上選択され、p−型酸化物半導体化合物は、Y2O3、La2O3、CeO2、Mn2O3、Co2O4、NiO、PdO、Ag2O、Bi2O3、Sb2O3、CuO、及びTeO2よりなる群から1つ以上選択されることを特徴とする請求項7に記載の環境ガスセンサー。
- 前記金属電極は、前記異種のナノ繊維のうち一種が整列される一対の第1金属電極と、他の種が整列される一対の第2金属電極とを含むことを特徴とする請求項1に記載の環境ガスセンサー。
- 前記ナノ繊維は、その直径が1nm乃至1000nmであることを特徴とする請求項1に記載の環境ガスセンサー。
- 絶縁基板上に互いに対向する金属電極を二対形成する段階と、
前記互いに対向する二対の金属電極上に各々電気放射を通じて異種のナノ繊維を互いに直交するように整列させる段階と、
前記整列された異種のナノ繊維を熱処理し、感知層を形成する段階と、を含む環境ガスセンサーの製造方法。 - 前記異種のナノ繊維を互いに直交するように整列させる段階は、
一対の第1金属電極上に一種の酸化物半導体/ポリマー複合溶液を電気放射し、一種のナノ繊維を整列させる段階と、
一対の第2金属電極上に他の種の酸化物半導体/ポリマー複合溶液を電気放射し、他の種のナノ繊維を前記一種のナノ繊維と互いに直交するように整列させる段階と、を含むことを特徴とする請求項11に記載の環境ガスセンサーの製造方法。 - 前記一種の酸化物半導体は、n−型半導体酸化物であり、前記他の種の酸化物半導体は、p−型半導体酸化物であることを特徴とする請求項12に記載の環境ガスセンサーの製造方法。
- 前記一種の酸化物半導体は、p−型半導体酸化物であり、前記他の種の酸化物半導体は、n−型半導体酸化物であることを特徴とする請求項12に記載の環境ガスセンサーの製造方法。
- 前記酸化物半導体/ポリマー複合溶液は、金属酸化物または金属酸化物前駆体、ポリマー及び溶媒を混合した後、常温以上の温度で撹拌して製造されることを特徴とする請求項12に記載の環境ガスセンサーの製造方法。
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