JP5026221B2 - Organic electroluminescent display device and manufacturing method thereof - Google Patents

Description

  In the present invention, when forming an organic film layer including a light emitting layer using a vapor deposition mask, a ball-shaped spacer positioned above the pixel definition film is used to damage the pixel definition film due to the unevenness of the vapor deposition mask. BACKGROUND OF THE INVENTION 1. Field of the Invention

  In general, an organic electroluminescent device includes a first electrode (anode) that is a transparent electrode such as ITO and a second electrode (cathode) that uses a metal (Ca, Li, Al, etc.) having a low work function. It has a structure in which an organic film layer is interposed therebetween. When a forward voltage is applied to such an organic electroluminescent device, holes and electrons are combined at the anode and the cathode to form excitons, and the excitons emit light. Recombination causes electroluminescence.

  The first electrode is a reflection type, that is, is formed so as to reflect light, and the second electrode is formed as a transmission type, ie, is configured to transmit light, so that light emitted from the organic film layer can be transmitted. An organic electroluminescence device that emits in the direction of the second electrode can be manufactured.

  At this time, the organic film layer can be formed by various methods, and one of them is vapor deposition. In order to manufacture an organic light emitting display using the vapor deposition method, a thin film or the like is used. A mask having the same pattern as the pattern of the thin film is brought into close contact with the surface on which the film is formed, and a material such as a thin film is deposited to form a thin film with a predetermined pattern.

FIG. 1 is a cross-sectional view schematically showing a vapor deposition apparatus equipped with a vapor deposition mask.
Referring to FIG. 1, in order to deposit a thin film of an organic light emitting display device, that is, an organic film layer including a light emitting layer, using a mask 1, a thin film deposition container 3 installed in a vacuum chamber 2, A frame 4 coupled to a mask is installed on the corresponding side, and an object 5 on which a thin film or the like is formed is mounted on the frame 4. The mask 1 is formed on the top of the object 5 by driving a magnet unit 6 for bringing the mask 1 supported by the frame 4 into close contact with the object 5 on which the thin film is formed. The object 5 to be touched is closely attached. In this state, by operating the thin film deposition container 3, the substance attached to the thin film deposition container 3 is deposited on the object 5.

  However, since the surface of the mask 1 has 2 to 3 μm unevenness, and the mask 1 and the object 5 on which the thin film is formed are in close contact with each other. Then, a scratch is applied to the thin film of the object 5, for example, the pixel definition film. In order to prevent this, a spacer structure is formed between the object 5 and the surface of the mask 1.

  2A and 2B are cross-sectional views illustrating a method for manufacturing a conventional organic light emitting display device.

  Referring to FIG. 2 a, the organic light emitting display includes a buffer layer 110 formed on the substrate 100, source / drain regions 120 a and 120 b and a channel region 121 formed on the buffer layer 110. A semiconductor layer, a gate electrode 131 formed on the gate insulating film 130, a source / drain formed on the interlayer insulating film 140 and electrically connected to the source / drain regions 120a and 120b through contact holes, respectively. Drain electrodes 150a and 150b.

  Meanwhile, an organic electroluminescent device is formed on the substrate 100. The organic electroluminescence device is formed on the protective film 160 and the planarization film 170 formed on the thin film transistor and is electrically connected to the drain electrode 150b through a via hole. Then, a pixel defining layer 190 that exposes a certain region of the first electrode and includes an opening that defines a pixel is formed.

  Further, a spacer film is coated on the pixel definition film 190, a photoresist film (not shown) is formed on the spacer film, and the photoresist film (not shown) is exposed and developed using a shadow mask. Thus, after forming a photoresist pattern (not shown), the spacer film is patterned using the photoresist pattern (not shown) as a mask to form a spacer pattern 191.

  Next, as shown in FIG. 2b, an organic film layer 192 including a light emitting layer is formed using a vapor deposition apparatus having a vapor deposition mask as described above. Also, the second electrode 193 is formed on the organic film layer 192 by using a method such as sputtering. In this case, when the organic film layer is formed using the vapor deposition apparatus, the spacer pattern is caused by the unevenness of the vapor deposition mask generated when the vapor deposition mask is brought into close contact with the substrate on which the pixel definition film is formed. This serves to prevent damage to the pixel definition film and the like.

  However, in the conventional organic light emitting display as described above, the photolithographic process for forming the spacer pattern is added once, and the material cost is increased due to the formation of the spacer film. There is a problem of lowering.

In addition, since the conventional organic light emitting display as described above patterns the spacer film by a photoetching process to form the spacer pattern as described above, the remaining film of the spacer film remains on the first electrode. There is a problem that the performance of the electroluminescent device is lowered.
Korean Patent Publication No. 10-2006-4476 Specification

  Accordingly, the present invention has been made to solve the above-described problems of the prior art, and its purpose is to define a pixel when forming an organic film layer including a light emitting layer using a vapor deposition mask. Organic electroluminescent display that eliminates the conventional photo-etching process to form spacer patterns by using a ball-shaped spacer located on the top of the film to prevent damage to the pixel-definition film due to the unevenness of the deposition mask It is to provide an apparatus and a manufacturing method thereof.

  In order to achieve the above object, an organic light emitting display according to one embodiment of the present invention includes a substrate, a first electrode located on the substrate, a first electrode located on the first electrode, and an opening and a non-electrode. A pixel defining film having an opening; a plurality of ball-shaped spacers located in a non-opening of the pixel defining film; an organic film layer located above the first electrode and including a light emitting layer; and the organic film And a second electrode located on top of the layer.

  The organic light emitting display according to the present invention further comprises a semiconductor layer having source / drain regions on the substrate, and a thin film transistor having source / drain electrodes electrically connected to the semiconductor layer, Any one of the source / drain electrodes is connected to the first electrode.

  An organic light emitting display according to another aspect of the present invention includes a substrate, a semiconductor layer having source / drain regions on the substrate, and a source / drain electrode electrically connected to the semiconductor layer. A thin film transistor, a first electrode connected to any one of the source / drain electrodes and having a laminated structure of a lower electrode layer, a reflective electrode layer, and an upper electrode layer, and an opening located on the first electrode A pixel defining film having a portion and a non-opening, a plurality of ball-shaped spacers located in the non-opening of the pixel defining film, an organic film layer located on the first electrode and including a light emitting layer, And a second electrode located on the organic film layer.

  According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, comprising: preparing a substrate; forming a first electrode on the substrate; forming a pixel definition film on the first electrode. Applying a plurality of ball-shaped spacers on the pixel definition film; exposing a part of the first electrode on the pixel definition film and forming an opening for defining a light emitting region; Forming an organic film layer positioned above and including a light emitting layer; and forming a second electrode on the organic film layer.

  The method for manufacturing an organic light emitting display according to the present invention further comprises: a semiconductor layer having a source / drain region on the substrate; and a thin film transistor having a source / drain electrode electrically connected to the semiconductor layer. One of the source / drain electrodes is formed and connected to the first electrode.

  The method for manufacturing an organic light emitting display according to the present invention further comprises a step of exposing the pixel definition film to form an opening on the pixel definition film after the pixel definition film is formed. And

  The method for manufacturing an organic light emitting display according to the present invention further includes a step of baking the substrate including the ball-shaped spacer after the ball-shaped spacer is applied.

  In the method for manufacturing an organic light emitting display according to the present invention, the organic film layer is formed using a vapor deposition mask.

  Accordingly, the organic light emitting display according to the present invention uses a ball-shaped spacer positioned above the pixel definition film when forming the organic film layer including the light emitting layer using the vapor deposition mask. By preventing damage to the pixel definition film and the like due to the unevenness, the conventional process for forming the spacer pattern is eliminated.

  In addition, since the organic light emitting display according to the present invention eliminates the process for forming the spacer pattern, the photo etching process for forming the spacer pattern can be reduced, and the material by forming the spacer film can be reduced. There is an effect of preventing an increase in cost.

  In addition, since the organic electroluminescent display device according to the present invention eliminates the spacer film patterning process, the remaining film of the spacer film remains on the first electrode to solve the problem of reducing the performance of the organic electroluminescent device. There is an effect.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiment is presented as an example so that the concept of the present invention can be sufficiently transmitted to those skilled in the art. Therefore, the present invention is not limited to the following embodiments, and various modifications are possible. In the drawings, the length and thickness of layers and regions are exaggerated for the sake of clarity. In this specification, the same reference number indicates the same component.

FIG. 3 is a plan view showing a unit pixel of the organic light emitting display device.
As shown in FIG. 3, in one unit pixel, a switching transistor Tr1, a driving transistor Tr2, a capacitor 40, and an organic light emitting diode 50 are formed, and light is emitted by a signal. The gate line 10, the data line 20, and the power supply line 30 are connected to each element.

  The switching transistor Tr1 is driven by a scan signal applied to the gate line 10, and serves to transmit a data signal applied to the data line 20 to the driving transistor Tr2.

  The driving transistor Tr2 determines the amount of current flowing through the organic light emitting diode 50 according to the data signal transmitted from the switching transistor Tr1 and the signal transmitted from the power supply line 30, that is, the voltage difference between the gate and the source.

  The capacitor 40 serves to store the data signal transmitted through the switching transistor Tr1 during one frame.

    4A to 4E are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an implementation example of the present invention.

As shown in FIG. 4a, a buffer layer 210 having a predetermined thickness is formed on the entire surface of the transparent insulating substrate 200 by a plasma-enhanced chemical vapor deposition (PECVD) method. To do. At this time, the buffer layer 210 prevents the impurities in the transparent insulating substrate 200 from diffusing during a crystallization process of an amorphous silicon layer formed in a subsequent process.

  An amorphous silicon layer (not shown) as a semiconductor layer is deposited on the buffer layer 210 to a predetermined thickness. Next, the amorphous silicon layer is etched using an ELA (Excimer Laser Annealing), SLS (Sequential Lateral Solidification), MIC (Metal Induced Crystallization), or MILC (Metal Induced Lateral Crystal) process. Patterning is performed to form a semiconductor layer pattern in the unit pixel.

A gate insulating layer 230 is formed on the entire surface of the substrate including the semiconductor layer pattern. At this time, the gate insulating film 230 may be formed of a silicon oxide film (SiO ₂ ), a silicon nitride film (SiN _x ), or a double layer thereof.

  A gate electrode 231 is formed on the gate insulating layer 230 in a certain region corresponding to the channel region 221 of the semiconductor layer pattern. The gate electrode 231 may be formed of one material selected from the group consisting of aluminum (Al), aluminum alloy (Al-alloy), molybdenum (Mo), and molybdenum alloy (Mo-alloy).

  Next, impurities are ion-implanted into the semiconductor layer pattern 220 using the gate electrode 231 as an ion implantation mask to form source / drain regions 220a and 220b. At this time, the ion implantation process is performed using an n + or p + impurity as a dopant.

Next, an interlayer insulating film 240 having a predetermined thickness is formed on the entire surface. At this time, the interlayer insulating film 240 may be formed of a silicon oxide film (SiO ₂ ), a silicon nitride film (SiN _x ), or a double layer thereof.

  Next, the interlayer insulating layer 240 and the gate insulating layer 230 are etched by a photolithography process to form contact holes that expose the source / drain regions 220a and 220b.

  Next, a source / drain electrode material is formed on the entire surface including the contact holes, and the source / drain electrode material is etched by a photoetching process, so that the source / drain regions connected to the source / drain regions 220a and 220b are etched. Drain electrodes 250a and 250b are formed. At this time, when the source / drain electrodes 250a and 250b are formed, the source / drain electrode material is selected from the group consisting of Mo, W, MoW, AlNd, Ti, Al, Al alloy, Ag, and Ag alloy. A single material is used to form a single layer, or a multi-layer structure of two or more layers of Mo, Al, or Ag, which is a low resistance material to reduce wiring resistance, that is, Mo / Al / Mo, MoW / Al—Nd / MoW, Ti / Al / Ti, Mo / Ag / Mo, Mo / Ag—alloy / Mo, and the like.

  An insulating layer is disposed on the source / drain electrodes 250a and 250b, and the insulating layer may be an inorganic layer 260, an organic layer 270, or a double layer thereof. In addition, a first electrode layer 280 connected via a via hole in the insulating film is located on the insulating film.

  The first electrode layer 280 may be provided as a transparent electrode in the case of a rear emission type, and may be provided as a reflection type electrode in the case of a front emission type. When the first electrode layer is used as a transparent electrode, one material selected from the group consisting of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), TO (Tin Oxide), and ZnO (Zinc Oxide). In the case of being used as a reflective electrode, any one selected from the group consisting of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and their compounds After forming the reflective film with one material, a material selected from the group consisting of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), TO (Tin Oxide) and ZnO (Zinc Oxide) is used. Can be formed by laminating transparent electrodes Kill.

  In addition, the first electrode layer 280 may be formed of a stacked structure of a lower electrode layer 280a, a reflective electrode layer 280b, and an upper electrode layer 280c in the case of a front emission type.

  The lower electrode layer 280a may be formed of one material selected from the group consisting of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), TO (Tin Oxide), and ZnO (Zinc Oxide). At this time, the lower electrode layer 280a is formed to have a thickness of 50 to 100 mm. When the thickness of the lower electrode layer 280a is 50 mm or less, it is difficult to ensure uniformity, and when the thickness is 100 mm or more, the adhesive strength is weakened due to the stress of the lower electrode layer itself.

  The reflective electrode layer 280b can be formed using one material selected from the group consisting of Al, Al alloy, Ag, and Ag alloy. In this case, the thickness of the reflective electrode layer 280b is as follows: It can be formed at 900 to 2000 mm. When the thickness is 900 mm or less, a part of the light is transmitted, and about 1000 mm is the minimum thickness that does not transmit the light. Moreover, when it is 2000 mm or more, it is unpreferable from viewpoints, such as cost and process time.

  At this time, the reflective electrode layer 280b plays a role of light reflection, so that brightness and light efficiency can be increased.

  The upper electrode layer 280c may be formed of one material selected from the group consisting of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), TO (Tin Oxide), and ZnO (Zinc Oxide). At this time, the upper electrode layer 280c has a thickness of 50 to 100 mm. When the thickness of the upper electrode layer 280c is 50 mm or less, the uniformity of the thin film cannot be ensured. When the thickness is 100 mm or more, the reflectance is particularly 10% to 15% in the blue region due to the interference effect. % Or lower.

  Next, an insulating film is formed on the first electrode 280. At this time, the insulating layer may be a pixel defining layer 281.

  The pixel defining layer 281 includes a polyacrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, and an unsaturated polyester system. Resin (unsaturated polymer) resin, polyphenylene resin, polyphenylene sulfide resin, and benzocyclobutene (BCB) may be selected from the group consisting of one group consisting of benzocyclobutene and BCB.

  At this time, the pixel defining layer 281 may be made of a positive material material or a negative material material.

  In the case of the positive material, the structure of the portion irradiated with light in the photolithographic process is softened, and the portion irradiated with light during the development process is removed, and the negative In the case of the material substance, the structure of the portion irradiated with light in the photolithography process is hardened, and the portion not irradiated with light during the development process is removed.

  Next, a photolithography process is performed to expose a predetermined region of the first electrode on the pixel defining layer 281 and form an opening that defines a light emitting region.

  As shown in FIG. 4 b, the photolithography process first exposes the pixel definition layer using a shadow mask 282.

  At this time, the structure of the shadow mask can be changed according to the material of the pixel defining layer.

  That is, as shown in FIG. 4b, in the shadow mask 282, when the substance of the pixel definition film is a positive material, the portion planned as the opening is a transmission region, and the region other than the opening Is a structure that is a blocking region, and the shadow mask is used to irradiate light to a portion planned as the opening, and the structure of the portion irradiated with the light is softened, and then developed. At the time of the process, a region that is irradiated with light and is planned as an opening is removed.

  In addition, although not shown in the drawing, in the shadow mask, when the pixel definition film is a negative material, a portion planned as an opening is a blocking region, and a region other than the opening is a transmission region. It is a certain structure, and the shadow mask is used to irradiate a region other than the opening, and the structure of the portion irradiated with the light is strengthened, and then the light is irradiated during the development process. The region which is not subjected to the above and is planned as the opening is removed.

  Next, as shown in FIG. 4 c, the pixel defining layer 281 is exposed using the shadow mask 282, and then a ball spacer 290 a is applied on the pixel defining layer 281.

  At this time, the ball-shaped spacer 290a may be applied using a spacer dispenser 290.

  Next, after the ball-shaped spacer 290a is applied, a baking process for fixing the ball-shaped spacer 290a on the pixel definition film 281 is performed. The baking process can be performed at a temperature of 50 to 200 ° C.

  5a and 5b are photographs showing a case where the developing process is performed without performing the baking process.

  As is clear from FIG. 5a, the ball-shaped spacer was positioned on the pixel definition film before the development process. However, as is clear from FIG. It can be seen that all the spacers are removed from the pixel defining film.

  6a and 6b are photographs showing a case where the development process is performed after the baking process.

  As is clear from FIG. 6a, it can be seen that the ball-shaped spacer is positioned on the pixel definition film before the development process, and after the development process, as is clear from FIG. 5b. However, it can be seen that the ball-shaped spacer is positioned on the pixel definition film.

  Next, as shown in FIG. 4d, after the baking process is performed, the pixel definition film is developed to expose a certain area of the first electrode on the pixel definition film and define an emission area. A portion 281a is formed.

  When the substance of the pixel definition film is a positive material, the opening is formed by removing the portion of the pixel definition film that has been irradiated with light and planned as the opening during the development process. At the same time, the ball-shaped spacer located on the upper portion is removed, and the ball-shaped spacer located on the region other than the opening remains on the pixel definition film as usual.

  In addition, when the pixel definition film is a negative material, the opening is formed by removing a portion of the pixel definition film that is not irradiated with light and is planned as an opening during the development process. At the same time, the ball-shaped spacer located on the upper portion thereof is removed, and the ball-shaped spacer located on the region other than the opening remains on the pixel definition film.

  Next, as shown in FIG. 4e, an organic film layer 291 located on the first electrode 280 and including a light emitting layer is formed, and then a second electrode 292 is formed on the organic film layer 291. To do.

  The organic film layer 291 including the light emitting layer is formed using a vapor deposition apparatus provided with a vapor deposition mask. At this time, when the organic film layer is formed using the vapor deposition apparatus, the ball-shaped spacer is formed by the unevenness of the vapor deposition mask generated when the vapor deposition mask is in close contact with the substrate on which the pixel definition film is formed. It serves to prevent damage to the pixel definition film and the like.

  In the organic light emitting display of the present invention as described above, a pixel defining film is formed on the first electrode, and a region that is planned as an opening or a region other than the opening is exposed through a shadow mask. After spreading the ball-shaped spacers and fixing the ball-shaped spacers on the pixel definition film by a baking process, the light emitting area is defined, and the portion planned as the opening is developed, so that the area other than the opening is developed. The ball-shaped spacer is positioned, thereby preventing the pixel definition film from being damaged by the unevenness of the evaporation mask.

  Therefore, the organic light emitting display of the present invention can eliminate the photo etching process for forming the spacer pattern as in the conventional organic light emitting display, and eliminate the process of forming the spacer pattern. Therefore, it is possible to solve the problem that the remaining film of the spacer film remains on the first electrode and the performance of the organic electroluminescent element is deteriorated.

  The organic film layer 291 includes a light emitting layer, and may additionally include one or more of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

  As the hole transporting material forming the hole transport layer, N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine {N, N′-di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: α-NPB}, N, N'-bis (3-methylphenyl)-(N, N'-diphenyl- [1,1'-biphenyl] -4,4'- Diamine (TPD)) and the like can be used. The film thickness of the hole transport layer can be formed in the range of 10 to 50 nm. If the thickness is outside the thickness range of the hole transport layer, the hole injection characteristics deteriorate, which is not preferable.

  In addition to the hole transporting substance, a dopant capable of emitting light with respect to the electron-hole bond can be added to such a hole transporting layer. As such a dopant, 4- (dicyanomethylene) -2-tert- Butyl-6- (1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (4- (dicyanomethylene) -2-t-butyl-6- (1,1,7,7 -Tetramethyldiolidyl-9-enyl) -4H-pyran: DCJTB), coumarin 6 (Coumarin 6), rubrene (ubrene), DCM, DCJTB, Perylene, quinacridone (Quinacridone), etc. 0.1 to the total weight of the transport layer forming material. To use a 5% by weight. When a dopant is added when forming a hole transport layer in this way, the emission color can be adjusted according to the type and content of the dopant, improving the thermal stability of the hole transport layer and improving the lifetime of the device. There is an advantage.

  The hole injection layer may be formed using a starburst amine compound, and the hole injection layer may have a thickness of 30 to 100 nm. When the thickness is out of the thickness range of the hole injection layer, the hole injection characteristics are not good, which is not preferable. The contact resistance between the counter electrode and the hole transport layer can be reduced through the hole injection layer, and the hole transport capability of the anode electrode can be improved, so that the effect of improving the overall characteristics of the device can be obtained.

  The material for forming the light emitting layer of the present invention is not particularly limited, and specific examples thereof include CBP (4, 4'-bis (carbazol-9-yl) -biphenyl).

  The light emitting layer of the present invention can further contain a dopant capable of emitting light with respect to an electron-hole bond in the same manner as the hole transport layer described above. In this case, the kind and content of the dopant are the same as those of the hole transport layer. The thickness of the light emitting layer is preferably in the range of 10 to 40 nm.

  As the electron transporting material forming the electron transport layer, tris (8-quinolinolato) -aluminum (tris (8-quinolinolato) -aluminum: Alq3), Almq3 is used, and the electron transport layer is similar to the above-described hole transport layer. You may further contain the dopant which can light-emit with respect to a hole bond. At this time, the kind and content of the dopant are substantially the same as those in the case of the hole transport layer, and the film thickness of the electron transport layer can be in the range of 30 to 100 nm. If the thickness is outside the thickness range of the electron transport layer, the efficiency decreases and the drive voltage increases, which is not preferable.

  A hole barrier layer (HBL) may be further formed between the light emitting layer and the electron transport layer. Here, the hole barrier layer serves to prevent excitons formed of the phosphorescent material from moving to the electron transport layer and to prevent holes from moving to the electron transport layer. BAlq can be used as a material for forming the hole barrier layer.

  The electron injection layer may be formed of a material made of LiF, and may have a thickness in the range of 0.1 to 10 nm. When the thickness is outside the thickness range of the electron injection layer, the driving voltage increases, which is not preferable.

  When the second electrode 292 formed on the organic film layer is a back emission type, the second electrode 292 is a reflection type. When the second electrode 292 is a reflection type, the second electrode 292 is Li, Ca, LiF / Ca, LiF / Al, Al. , Mg and their alloys can be used to form any one substance.

  In addition, the second electrode 292 formed on the organic film layer may be a semi-transmissive cathode type or a structure in which a transmissive cathode type is stacked after the formation of the semi-transmissive cathode in the case of a front emission type. . The transflective cathode type has a thickness of 5 to 30 nm using any one material selected from the group consisting of Li, Ca, LiF / Ca, LiF / Al, Al, Mg, and Mg alloys. It can be formed to be thin. In addition, after forming the transflective cathode, the method for forming the transmissive cathode type is selected from the group consisting of metals having a low work function, that is, Li, Ca, LiF / Ca, LiF / Al, Al, Mg, and Mg alloys. After forming a transflective cathode using any one of the materials described above, a film using ITO or IZO having low resistance characteristics is additionally formed. At this time, when the thickness of the semi-transmissive cathode is less than 5 nm, electrons cannot be injected at a low voltage, and when the thickness of the semi-transmissive cathode is 30 nm or more, the transmittance is low. Since it falls remarkably, it is not preferable. The total thickness of the semi-transmissive cathode and the transmissive cathode is suitably 10 to 400 nm.

  The present invention described above can be variously replaced, modified, and changed without departing from the technical idea of the present invention as long as it has ordinary knowledge in the technical field to which the present invention belongs. Therefore, the present invention is not limited to the above-described embodiment and attached drawings.

It is sectional drawing which shows roughly the vapor deposition apparatus provided with the mask for vapor deposition. It is sectional drawing explaining the manufacturing method of the conventional organic electroluminescent display apparatus. It is sectional drawing explaining the manufacturing method of the conventional organic electroluminescent display apparatus. It is a top view which shows the unit pixel of an organic electroluminescent display apparatus. It is sectional drawing which shows the manufacturing method of the organic electroluminescent display apparatus which concerns on the execution example of this invention. It is sectional drawing which shows the manufacturing method of the organic electroluminescent display apparatus which concerns on the execution example of this invention. It is sectional drawing which shows the manufacturing method of the organic electroluminescent display apparatus which concerns on the execution example of this invention. It is sectional drawing which shows the manufacturing method of the organic electroluminescent display apparatus which concerns on the execution example of this invention. It is sectional drawing which shows the manufacturing method of the organic electroluminescent display apparatus which concerns on the execution example of this invention. 6 is a photograph showing a case where a developing process is performed without performing a baking process. 6 is a photograph showing a case where a developing process is performed without performing a baking process. 6 is a photograph showing a case where a developing process is performed after a baking process is performed. 6 is a photograph showing a case where a developing process is performed after a baking process is performed.

Explanation of symbols

200 Substrate 210 Buffer layer 220a Source region 220b Drain region 221 Channel region 230 Gate insulating film 231 Gate electrode 240 Interlayer insulating film 150a Source electrode 150b Drain electrode 260 Inorganic film 270 Organic film 280 First electrode 281 Pixel definition film 290 Spacer dispenser 290a Ball Spacer 291 Organic film layer 292 Second electrode

Claims (22)

A substrate,
A first electrode located on the substrate;
A pixel defining film located on the first electrode and having an opening and a non-opening;
A plurality of ball-shaped spacers positioned in a non-opening portion of the pixel definition film and fixed to the pixel definition film by baking at 50 to 200 ° C . ;
An organic film layer located on the first electrode and including a light emitting layer;
A second electrode located on top of the organic film layer,
The second electrode covers the entire surface of the ball-shaped spacer ,
The organic light emitting display device according to claim 1, wherein the ball spacer does not contact the organic film layer . The pixel definition film includes a polyacrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, and an unsaturated polyester resin. (BCB) formed from one group consisting of (unsaturated polymer resins), polyphenylene resin (poly (phenylene ethers) resin), polyphenylene sulfide resin (poly (phenylene sulfide) resin), and benzocyclobutene (BCB). The method according to claim 1, wherein Organic electroluminescent display device. The first electrode is made of one material selected from the group consisting of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), TO (Tin Oxide) and ZnO (Zinc Oxide), and the second electrode is The organic electroluminescent display device according to claim 1, wherein the organic electroluminescent display device is made of any one substance selected from the group consisting of Li, Ca, LiF / Ca, LiF / Al, Al, Mg, and alloys thereof. The first electrode includes a reflective film formed of any one material selected from the group consisting of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and a compound thereof, A laminated structure in which a transparent electrode made of one material selected from the group consisting of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), TO (Tin Oxide) and ZnO (Zinc Oxide) is formed on the reflective film. The second electrode is made of one substance selected from the group consisting of Li, Ca, LiF / Ca, LiF / Al, Al, Mg, and an Mg alloy. The organic electroluminescent display device described. The organic electroluminescent display device according to claim 4, wherein the second electrode has a thickness of 5 to 30 nm. A semiconductor layer having a source / drain region on the substrate; and a thin film transistor having a source / drain electrode electrically connected to the semiconductor layer,
The organic light emitting display as claimed in claim 1, wherein any one of the source / drain electrodes is connected to the first electrode. A substrate,
A thin film transistor having a semiconductor layer having a source / drain region on the substrate and a source / drain electrode electrically connected to the semiconductor layer;
A first electrode connected to any one of the source / drain electrodes and having a laminated structure of a lower electrode layer, a reflective electrode layer, and an upper electrode layer;
A pixel defining film located on the first electrode and having an opening and a non-opening;
A plurality of ball-shaped spacers positioned in a non-opening portion of the pixel definition film and fixed to the pixel definition film by baking at 50 to 200 ° C . ;
An organic film layer located on the first electrode and including a light emitting layer;
A second electrode located on top of the organic film layer,
The second electrode covers the entire surface of the ball-shaped spacer ,
The organic light emitting display device according to claim 1, wherein the ball spacer does not contact the organic film layer . The pixel definition film includes a polyacrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, and an unsaturated polyester resin. (Unsaturated polyesters resin), polyphenylene resin (poly (phenylene ethers) resin), polyphenylene sulfide resin (poly (phenylenesulfides) resin), and a group consisting of one selected from the group consisting of benzocyclobutene and benzocyclobutene (BCB). The method according to claim 7, wherein Organic electroluminescent display device. The lower electrode layer is made of one material selected from the group consisting of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), TO (Tin Oxide), and ZnO (Zinc Oxide). 8. The organic electroluminescent display device according to 7. The organic electroluminescent display device according to claim 7, wherein the reflective electrode layer is made of one substance selected from the group consisting of Al, Al alloy, Ag, and Ag alloy. The upper electrode layer is made of one material selected from the group consisting of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), TO (Tin Oxide), and ZnO (Zinc Oxide). 8. The organic electroluminescent display device according to 7. The organic light emitting display according to claim 7, wherein the lower electrode layer has a thickness of 50 to 100 mm. The organic electroluminescent display device according to claim 7, wherein the reflective electrode layer has a thickness of 900 to 2000 mm. The organic light emitting display as claimed in claim 7, wherein the upper electrode layer has a thickness of 50 to 100mm. Prepare the board,
Forming a first electrode on the substrate;
Forming a pixel defining layer on the first electrode;
Applying a number of ball-shaped spacers on the pixel definition film,
Forming an opening for exposing a part of the first electrode and defining a light emitting region on the pixel defining layer;
Forming an organic film layer located on the first electrode and including a light emitting layer;
Forming a second electrode on the organic film layer ;
After applying the ball-shaped spacer, further comprising a step of baking the substrate including the ball-shaped spacer;
The baking process is performed at 50 to 200 ° C.
The second electrode covers the entire surface of the ball-shaped spacer ,
The method of manufacturing an organic light emitting display device, wherein the ball-shaped spacer is not in contact with the organic film layer . The method of manufacturing an organic light emitting display device according to claim 15, further comprising a step of exposing the pixel definition film to form an opening on the pixel definition film after the pixel definition film is formed. . The method of manufacturing an organic light emitting display according to claim 16, wherein the step of exposing the pixel defining film uses a shadow mask. In the shadow mask, when the pixel defining film is a positive material, a portion planned as an opening is a transmission region, and a region other than the opening is a blocking region. The method of manufacturing an organic light emitting display according to claim 17. In the shadow mask, when the pixel definition film is a negative material, a portion planned as an opening is a blocking region, and a region other than the opening is a transmission region. The method of manufacturing an organic light emitting display according to claim 17. The method of manufacturing an organic light emitting display device according to claim 15, wherein a vapor deposition mask is used to form the organic film layer. The method of manufacturing an organic light emitting display according to claim 15, wherein the spacer is applied using a spacer dispenser. Forming a semiconductor layer having a source / drain region on the substrate and a thin film transistor having a source / drain electrode electrically connected to the semiconductor layer;
16. The method of manufacturing an organic light emitting display device according to claim 15, wherein any one of the source / drain electrodes is connected to the first electrode.