CN102275862B - Micro-electromechanical packaging structure and manufacturing method thereof - Google Patents
Micro-electromechanical packaging structure and manufacturing method thereof Download PDFInfo
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- CN102275862B CN102275862B CN201010198045.6A CN201010198045A CN102275862B CN 102275862 B CN102275862 B CN 102275862B CN 201010198045 A CN201010198045 A CN 201010198045A CN 102275862 B CN102275862 B CN 102275862B
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Abstract
A manufacturing method of a micro-electromechanical packaging structure comprises the following steps of: firstly, forming intraconnection structures and a micro-electromechanical structure on substrates; secondly, forming films with a first opening and a second opening above the intraconnection structures and the micro-electromechanical structure; thirdly, using the first opening and the second opening as etching channels to remove part of an oxide layer so as to communicate a first cavity with a second cavity and suspend the part of the micro-electromechanical structure disposed inside the first cavity above the substrate; finally, sealing the second opening positioned above the micro-electromechanical structure in vacuum environment, and forming the first opening, which is sealed by a packaging part and positioned above the intraconnection structure, in nonvacuum environment so as to seal the micro-electromechanical structure inside the first cavity. The invention also provides the micro-electromechanical packaging structure formed by the manufacturing method. As the micro-electromechanical packaging structure can be produced at low temperature, its damage caused by high temperature can be minimized.
Description
Technical field
The present invention relates to a kind of micro electromechanical encapsulating structure and manufacture method thereof, and particularly about micro electromechanical encapsulating structure and the manufacture method thereof of a kind of low production cost and high technology qualification rate.
Background technology
MEMS (Micro Electromechanical System, MEMS) a brand-new technical field and industry have been opened up in the development of technology, it has been widely used in the various microelectronic devices with electronics and mechanical double grading, such as absolute pressure sense device, accelerator, mini microphone etc.
Because the work of microcomputer electric component is quite responsive, therefore its clean requirement degree for working environment is also higher.For the working environment of avoiding outside contamination source to enter microcomputer electric component affects the usefulness of microcomputer electric component, conventionally can, after the making that completes microcomputer electric component, carry out packaging technology so that microcomputer electric component is sealed in its working environment.Hence one can see that, and the qualification rate of packaging technology has great impact for the operational effectiveness of microcomputer electric component.
Summary of the invention
In view of this, the object of the invention is to, propose a kind of manufacture method of micro electromechanical encapsulating structure, to improve the technique qualification rate of micro electromechanical encapsulating structure.
Another object of the present invention is, also proposes a kind of micro electromechanical encapsulating structure, with effectively by micro electromechanical structure level Hermetic Package.
The invention provides a kind of manufacture method of micro electromechanical encapsulating structure, it first provides substrate, then in substrate, forms multilayer lower metal layer and multilayer the first oxide layer.Wherein, these lower metal layer and the first oxide layer intersecting and form micro electromechanical structure and internal connection-wire structure.Then, above internal connection-wire structure and this micro electromechanical structure, form upper metal layers, wherein upper metal layers has at least one first opening and at least one the second opening.The first opening is positioned at internal connection-wire structure top, and the second opening is positioned at micro electromechanical structure top, and the area of the first opening is greater than the area of the second opening.Afterwards, remove the first oxide layer of part taking the first opening and the second opening as etched channels, and arround above-mentioned micro electromechanical structure, form the first cavity, and form the second cavity in above-mentioned internal connection-wire structure top, wherein the first cavity is connected with this second cavity.Afterwards, first at vacuum environment lower seal the second opening, then under non-vacuum environment, form packaging part in upper metal layers top, to seal the first opening.
The present invention proposes a kind of micro electromechanical encapsulating structure, comprises substrate, internal connection-wire structure, micro electromechanical structure, upper metal layers, deposit and packaging part.Wherein, internal connection-wire structure and micro electromechanical structure are disposed in substrate respectively, and micro electromechanical structure is to be positioned at the first cavity.Upper metal layers is to be positioned at internal connection-wire structure and micro electromechanical structure top, and between upper metal layers and internal connection-wire structure, has the second cavity, and it is to be communicated to the first cavity.Upper metal layers has at least one first opening and at least one the second opening, and wherein the first opening is positioned at internal connection-wire structure top, and is communicated with above-mentioned the second cavity.The second opening is to be positioned at micro electromechanical structure top, and is communicated with the first above-mentioned cavity.And the area of the first opening is greater than the area of the second opening.Deposit is to be disposed in above-mentioned upper metal layers, to seal the second opening.Packaging part is to be disposed at upper metal layers top, to seal above-mentioned the first opening.
The present invention also proposes a kind of micro electromechanical encapsulating structure, comprises substrate, internal connection-wire structure, bolster, bearing course and encapsulated layer.Wherein, internal connection-wire structure is configured in substrate, and has the 3rd cavity.Bolster is partly disposed in the 3rd cavity, and bearing course is disposed at internal connection-wire structure top, and has the 5th opening that at least one is positioned at the 3rd cavity top and exposes partial buffer part.Encapsulated layer is to be disposed on bearing course, and inserts the 5th opening and be connected to bolster.
Beneficial effect of the present invention is: the technique of micro electromechanical encapsulating structure is first under vacuum environment, above internal connection-wire structure, to leave non-airtight passage, follow-uply under atmospheric pressure, micro electromechanical structure is sealed completely again, to avoid micro electromechanical structure when vacuum environment moves to atmospheric pressure, produce in MEMS district that rete subsides and the situation that causes structural damage.And, because micro electromechanical encapsulating structure of the present invention can be made under low temperature environment, therefore can reduce that micro electromechanical structure suffers high temperature and situation about damaging occurs.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of description, and for above and other object of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Brief description of the drawings
Figure 1A to Fig. 1 E is the generalized section in the micro electromechanical encapsulating structure manufacturing process of the embodiment of the present invention.
Generalized section in the micro electromechanical encapsulating structure part manufacturing process that Fig. 2 A to Fig. 2 C is another embodiment of the present invention.
Fig. 3 is the partial cutaway schematic of the micro electromechanical encapsulating structure of another embodiment of the present invention.
Fig. 4 is the partial cutaway schematic of the micro electromechanical encapsulating structure of another embodiment of the present invention.
Fig. 5 is the partial cutaway schematic of the micro electromechanical encapsulating structure of another embodiment of the present invention.
10,40,50,60: micro electromechanical encapsulating structure
11,31: substrate 116a: the first cavity
116b: the second cavity 12: semiconductor element
13a: lower metal layer 13b: upper metal layers
136: the second openings of 132: the first openings
14a: the first contact hole 14b: the second contact hole
15a: the first oxide layer 15b: the second oxide layer
16,32: internal connection-wire structure 17: micro electromechanical structure
18: 182: the three openings of mask layer
184: the four openings 19,35: encapsulated layer
190: packaging part 320: isolation structure
322: the three cavitys 324: metal level
326: oxide layer 328: contact hole
33,53,63: bolster 34: bearing course
342: the five openings 38: undoped polycrystalline silicon layer
56: movable piece 62: stop part
D1: the first space D 2: the second spacing
Detailed description of the invention
Technological means and effect of taking for reaching predetermined goal of the invention for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to detailed description of the invention, structure, feature and effect thereof of proposing according to the present invention, be described in detail as follows.
Figure 1A to Fig. 1 E is the generalized section in micro electromechanical encapsulating structure manufacturing process in one embodiment of the invention.Refer to Figure 1A, first substrate 11 is provided, it can be silicon on silicon base or insulating barrier (silicon on insulator, SOI) substrate.Specifically, in substrate 11, can be formed with one or more semiconductor elements 12, and in the time being formed with multiple semiconductor element 12 in substrate 11, each semiconductor element 12 is to be separated by each other with shallow trench insulation system (shallow trench insulation, STI) 111.But the invention is not restricted to this.
Please refer to Figure 1B, then in substrate 11, form multilayer lower metal layer 13a, upper metal layers 13b, multiple the first contact hole 14a and multilayer the first oxide layer 15a.Wherein, these lower metal layer 13a and the first oxide layer 15a are interlaced with each other stacked, and the first contact hole 14a is positioned at the first oxide layer 15a, and are connected to corresponding lower metal layer 13a.Specifically, these lower metal layer 13a, the first contact hole 14a and the first oxide layer 15a form internal connection-wire structure 16 and micro electromechanical structure 17 in substrate 11.Upper metal layers 13b is positioned at lower metal layer 13a top, and has at least one first opening 132 and at least one second opening 136.Wherein, the first opening 132 is to be positioned at internal connection-wire structure 16 tops, the second 136 of openings are to be positioned at micro electromechanical structure 17 tops, and the first opening 132 and the second opening 136 expose respectively the first oxide layer 15a of part, and the area of the first opening 132 is greater than the area of the second opening 136.At this, the material of lower metal layer 13a and upper metal layers 13b can be aluminium, and the material of the first contact hole 14a can be tungsten, and the material of the first oxide layer 15a can be silica or other oxides.
Please refer to Fig. 1 C, remove the first oxide layer 15a of part, and form the first cavity 116a around in micro electromechanical structure 17.Now internal connection-wire structure 16 tops also form the second cavity 116b being connected with the first cavity 116a simultaneously.Specifically, the present embodiment is for example to use hydrofluoric acid vapor, and carrys out the first oxide layer 15a of etching part taking the second opening 136 as etched channels.Certainly, those of ordinary skill in the art should be understood that removing in the process of part the first oxide layer 15a, also can use the first opening 132 and the second opening 136 as etched channels, to improve process rate simultaneously.
Please refer to Fig. 1 D, removing after these first oxide layers of part 15a, the present embodiment is that the pollution sources of avoiding extraneous are entered in the first inner chamber 116a and damaged micro electromechanical structure 17 by the second opening 136, it is first under vacuum environment, form deposit in upper metal layers 13b top, namely encapsulated layer 19, makes it fill out envelope the second opening 136.Specifically, disconnect at corresponding the first opening 132 places because the depth-to-width ratio of the second cavity 116b is enough to make encapsulated layer 19, therefore complete after the depositing operation of encapsulated layer 19, the first cavity 116a still can be communicated to the first opening 132 by the second cavity 116b.That is to say, the first cavity 116a does not belong to airtight space.Thus, can avoid complete the depositing operation of encapsulated layer 19 and by the structure shown in Fig. 2 B when vacuum environment moves to normal pressure, encapsulated layer 19 subsides because of the pressure reduction bending between the first cavity 116a and the external world, and then is conducive to improve technique qualification rate.
Refer to Fig. 1 E, forming after encapsulated layer 19, continuing can be under non-vacuum environment, in upper metal layers 13b upper formation packaging part 190, the first opening 132 is sealed, to avoid extraneous aqueous vapor or particulate to enter to the first cavity 116a and damage micro electromechanical structure 17 via the first opening 132 and the second cavity 116b.Now, and roughly complete the technique of micro electromechanical encapsulating structure 10.It is worth mentioning that, packaging part can be to engage in (wire bond) technique and form in the lump at routing.
From the above, before forming packaging part 190, the first cavity 116a is by the second cavity 116b and the first opening 132 and communicate with the external world, and packaging part 190 is to form under antivacuum environment, therefore can avoid upper metal layers 13b to subside because of the pressure differential bending between the first cavity 116a and the external world, and then can improve technique qualification rate.
In addition,, in another embodiment of the present invention, can also, before forming encapsulated layer 19, first on upper metal layers 13b, sequentially form one deck the second oxide layer 15b and mask layer 18, as shown in Figure 2 A.Wherein, in the second oxide layer 15b, also can be formed with multiple the second contact hole 14b.And mask layer 18 has at least one the 3rd opening 182 and at least one the 4th opening 184, wherein the 3rd opening 182 is to be positioned at the first opening 132 tops, and the 4th 184 of openings are to be positioned at micro electromechanical structure 17 tops.Specifically, the 4th opening 184 of the present embodiment is to be staggered with the second opening 136, but the invention is not restricted to this.
Afterwards, as shown in Figure 2 B, remove the second oxide layer 15b of part taking the 3rd opening 182 and the 4th opening 184 as etched channels, and expose the first opening 132 and the second opening 136.Follow-up again to remove the first oxide layer 15a partly with the same or analogous mode of previous embodiment, to form the first cavity 116a and the second cavity 116b.
Specifically, the aperture of the 3rd opening 182 of the mask layer 18 of the present embodiment is less than the aperture of the first opening 132 of upper metal layers 13b, therefore in the depositing operation of encapsulated layer 19, as shown in Figure 2 C, the metal material that is used as encapsulated layer 19 can partly be deposited on the 3rd opening 182 by the 3rd opening 182 of mask layer 18 and expose on upper metal layers 13b, and another part is to be deposited on internal connection-wire structure 16 by the first opening 132 of upper metal layers 13b.Hence one can see that, if the second cavity 116b has enough depth-to-width ratios, can make the not packed layer 19 of the 3rd opening 182 and the first opening 132 fill up covering.But the present invention does not limit shape and the size of the first opening 132 and the 3rd opening 182, as long as meeting after encapsulated layer 19 forms, it still can make the first cavity 116a communicate with the external world.
From above-described embodiment, the present invention can improve the technique qualification rate of micro electromechanical encapsulating structure.More understand the present invention for making to have the knack of this skill person, below will the application of micro electromechanical encapsulating structure of the present invention be described for embodiment.
Fig. 3 illustrates the partial cutaway schematic of the micro electromechanical encapsulating structure of another embodiment of the present invention.Refer to Fig. 3, micro electromechanical encapsulating structure 40 is for example the encapsulating structure of micro electronmechanical pressure detector, and it comprises substrate 31 internal connection-wire structures 32, bolster 33 bearing courses 34 and encapsulated layer 35.Wherein, internal connection-wire structure 32 is to be disposed in substrate 31, and has the 3rd cavity 322.Specifically, internal connection-wire structure 32 is made up of multiple layer metal layer 324, multilayer oxide layer 326 and multiple contact hole 328.Wherein, these metal levels 324 are interlaced with each other stacking with oxide layer 326, and 328 of contact holes are formed in oxide layer 326.Especially, metal level 324, contact hole 328 and the oxide layer 326 of part are for example in substrate 31, to form the isolation structure 320 around the 3rd cavity 322.Wherein, the material of metal level 324 is for example aluminium, and the material of contact hole 328 can be tungsten.More particularly, before forming internal connection-wire structure 32, also can first in substrate 31, form undoped polycrystalline silicon layer 38, isolation structure 320 is formed on undoped polycrystalline silicon layer 38.
Bolster 33 is to be partly disposed in the 3rd cavity 322, and its material can be aluminium.Specifically, bolster 33 can be to complete in the lump in the technique of internal connection-wire structure 32.Bearing course 34 is to be partly suspended from the 3rd cavity 322 tops, and has at least one the 5th opening 342, be positioned at the 3rd cavity 322 tops and expose part bolster 33.35 of encapsulated layers are be disposed on bearing course 34 and insert the 5th opening 342 and be connected to bolster 33.Specifically, the encapsulated layer 35 of the present embodiment can adopt low temperature process to form, thereby can prevent internal structure sustain damage under hot environment of micro electromechanical encapsulating structure 40, thereby easily guarantee that micro electromechanical encapsulating structure 40 has preferably production qualification rate and product quality.Specifically, the encapsulated layer 35 of the present embodiment is that in the environment below 350 degree Celsius, deposition forms, and it preferably Celsius 50 is spent to deposition in the environment between 100° centigrade and form.Wherein, the material of encapsulated layer 35 can be metal or other materials, for example aluminium.
And, because bearing course 34 can be connected to bolster 33 by encapsulated layer 35, therefore when bearing course 34 when bending, can further provide support power towards the 3rd cavity 322 by bolster 33 because bearing the extraneous pressure of bestowing, avoid bearing course 34 overbendings and damage.
It should be noted that previous embodiment is to explain as an example of the packaging technology of absolute pressure sense device example, but it is not in order to limit the present invention.Be example explanation the present invention below by the encapsulating structure of separately lifting inertia detector.
Fig. 4 illustrates the partial cutaway schematic of the micro electromechanical encapsulating structure of another embodiment of the present invention.Refer to Fig. 4, micro electromechanical encapsulating structure 50 is for example the encapsulating structure of inertia detector, and the deviation of the micro electromechanical encapsulating structure 40 of itself and previous embodiment is that the part that bolster 53 is positioned at the 3rd cavity 322 is to be connected to substrate 31.Specifically, bolster 53 is to form in same technique with internal connection-wire structure 32, and bolster 53 is also by stacking the forming of stratified film being formed in substrate 31.In addition, micro electromechanical encapsulating structure 50 more includes at least one movable piece 56, is positioned partially in the 3rd cavity 322 and is suspended from substrate 31 tops.Specifically the part that, movable piece 56 is positioned at the 3rd cavity 322 can move up and down in the 3rd cavity 322.
Please continue to refer to Fig. 4, in the present embodiment, although bearing course 34 is to be partly suspended in the 3rd cavity 322 tops, but it is also connected to bolster 53 by encapsulated layer 35, and bolster 53 is to be fixed in substrate 31, therefore in the time that bearing course 34 bears the extraneous pressure of bestowing, can avoid bearing course 34 overbendings to damage or have influence on the range of movement of movable piece 56 by the support of bolster 53.
In the aforementioned embodiment, bolster 53 is to be directly connected in substrate 31, but the present invention is not as limit.In other embodiments, bolster 63 also can be suspended from substrate 31, as shown in Figure 5.Specifically, the micro electromechanical encapsulating structure 60 of the present embodiment more comprises stop part 62, between substrate 31 and bolster 63, and between stop part 62 and bolster 63, has the first space D 1, second space D 2 of being separated by between movable piece 56 and bearing course 35.It should be noted that the first space D 1 between stop part 62 and bolster 63 is less than the second space D 2 between bearing course 35 and movable piece 56 in order to guarantee that bearing course 35 can not affect the motion path of movable piece 56 while being subject to ambient pressure bending.Therefore,, in the time that bearing course 35 is subject to ambient pressure and is bent downwardly and makes bolster 63 to conflict to stop part 62, movable piece 56 still can normally be worked.
In sum, the present invention can utilize CMOS technique to complete the encapsulation of micro electromechanical structure, to reduce the processing step of micro electromechanical encapsulating structure, and then reduces the production cost of micro electromechanical encapsulating structure and improves technique qualification rate.Specifically, because the technique of micro electromechanical encapsulating structure of the present invention can be carried out under low temperature environment, therefore can reduce that micro electromechanical structure suffers high temperature and situation about damaging occurs.
In addition, in the technique of micro electromechanical encapsulating structure of the present invention, can also first under vacuum environment, leave non-airtight passage in cmos circuit district, follow-uply under atmospheric pressure, micro electromechanical structure is sealed completely again, to avoid micro electromechanical encapsulating structure when vacuum environment moves to atmospheric pressure, produce in micro electronmechanical district that rete subsides and the situation that causes structural damage.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be not depart from technical solution of the present invention content, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (21)
1. a manufacture method for micro electromechanical encapsulating structure, is characterized in that comprising:
A substrate is provided;
In this substrate, form multilayer lower metal layer and multilayer the first oxide layer, wherein this multilayer lower metal layer and this multilayer the first oxide layer intersecting and form a micro electromechanical structure and an internal connection-wire structure;
Form one deck upper metal layers in this internal connection-wire structure and this micro electromechanical structure top, wherein this upper metal layers has at least one first opening and at least one the second opening, this first opening is positioned at this internal connection-wire structure top, this second opening is positioned at this micro electromechanical structure top, and the area of this first opening is greater than the area of this second opening;
Taking this first opening and this second opening as etched channels, around this micro electromechanical structure, form first cavity to remove this multilayer first oxide layer of part, and form second cavity in this internal connection-wire structure top, wherein this first cavity is connected with this second cavity;
At this second opening of vacuum environment lower seal; And
Under non-vacuum environment, above this upper metal layers, form a packaging part, to seal this first opening.
2. the manufacture method of micro electromechanical encapsulating structure as claimed in claim 1, it is characterized in that, after removing this multilayer first oxide layer of part, above this upper metal layers, forming one deck encapsulated layer inserts in this second opening, and in to should first opening part disconnect, and make this first cavity be communicated to this first opening by this second cavity.
3. the manufacture method of micro electromechanical encapsulating structure as claimed in claim 1, is characterized in that, removes the method for this multilayer the first oxide layer of part for using hydrofluoric acid vapor etching method.
4. the manufacture method of micro electromechanical encapsulating structure as claimed in claim 1, is characterized in that, before removing this multilayer first oxide layer of part,
In this upper metal layers, form one deck the second oxide layer;
In this second oxide layer, form one deck mask layer, this mask layer has at least one the 3rd opening and at least one the 4th opening, and wherein the 3rd opening is positioned at this first opening top, and the 4th opening is positioned at this micro electromechanical structure top; And
Taking the 3rd opening and the 4th opening as etched channels, remove this second oxide layer of part, to expose this first opening and this second opening.
5. the manufacture method of micro electromechanical encapsulating structure as claimed in claim 4, is characterized in that, the aperture of this first opening is greater than the aperture of the 3rd opening.
6. the manufacture method of micro electromechanical encapsulating structure as claimed in claim 4, is characterized in that, the 4th opening and this second interleaved openings are arranged.
7. a micro electromechanical encapsulating structure, is characterized in that comprising:
A substrate;
An internal connection-wire structure, is disposed in this substrate;
A micro electromechanical structure, is disposed in this substrate, and is positioned at first cavity;
One deck upper metal layers, be positioned at this internal connection-wire structure and this micro electromechanical structure top, and between this upper metal layers and this internal connection-wire structure, there is second cavity, be communicated to this first cavity, and this upper metal layers has at least one first opening and at least one the second opening, wherein this first opening is positioned at this internal connection-wire structure top, and be communicated with this second cavity, this second opening is positioned at this micro electromechanical structure top, and be communicated with this first cavity, and the area of this first opening is greater than the area of this second opening;
A deposit, is disposed at this upper metal layers top, to seal this second opening; And
A packaging part, is disposed at this upper metal layers top, to seal this first opening.
8. micro electromechanical encapsulating structure as claimed in claim 7, is characterized in that, this deposit is one deck encapsulated layer, be disposed between this upper metal layers and this packaging part, and seal this second opening, and in to should first opening part disconnect.
9. micro electromechanical encapsulating structure as claimed in claim 8, it is characterized in that, this micro electromechanical encapsulating structure further comprises a mask layer, be disposed between this upper metal layers and this encapsulated layer, wherein this mask layer has at least one the 3rd opening and at least one the 4th opening, and the 3rd opening is positioned at this first opening top, the 4th opening is positioned at this micro electromechanical structure top.
10. micro electromechanical encapsulating structure as claimed in claim 9, is characterized in that, the aperture of this first opening is greater than the aperture of the 3rd opening.
11. micro electromechanical encapsulating structures as claimed in claim 9, is characterized in that, this second opening and the 4th interleaved openings are arranged.
12. 1 kinds of micro electromechanical encapsulating structures, is characterized in that comprising:
A substrate;
An internal connection-wire structure, is disposed in this substrate, and has a cavity;
A bolster, is partly disposed in this cavity;
One deck bearing course, is partly suspended from this cavity top, and has at least one opening, is positioned at this cavity top and exposes this bolster of part, and this opening and this cavity interconnect; And
An encapsulated layer, is disposed on this bearing course, and inserts this opening and be connected to this bolster.
13. micro electromechanical encapsulating structures as claimed in claim 12, is characterized in that, the material of this encapsulated layer is metal.
14. micro electromechanical encapsulating structures as claimed in claim 12, is characterized in that, the material of this encapsulated layer is aluminium.
15. micro electromechanical encapsulating structures as claimed in claim 12, is characterized in that, this micro electromechanical encapsulating structure further comprises an isolation structure, are disposed in this substrate and around this cavity.
16. micro electromechanical encapsulating structures as claimed in claim 15, is characterized in that, this micro electromechanical encapsulating structure further comprises one deck undoped polycrystalline silicon layer, are disposed between this isolation structure and this substrate.
17. micro electromechanical encapsulating structures as claimed in claim 12, is characterized in that, the part that this bolster is positioned at this cavity is connected to this substrate.
18. micro electromechanical encapsulating structures as claimed in claim 12, is characterized in that, the part that this bolster is positioned at this cavity is suspended from this substrate top.
19. micro electromechanical encapsulating structures as claimed in claim 18, is characterized in that, this micro electromechanical encapsulating structure further comprises a stop part, be disposed between this substrate and this bolster, and first spacing of being separated by between this bolster and this stop part.
20. micro electromechanical encapsulating structures as claimed in claim 19, is characterized in that, this micro electromechanical encapsulating structure further comprises at least one movable piece, are positioned partially in this cavity and are suspended from this substrate top.
21. micro electromechanical encapsulating structures as claimed in claim 20, is characterized in that, second spacing of being separated by between this movable piece and this bearing course, and this second spacing is greater than this first spacing.
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| US5798283A (en) * | 1995-09-06 | 1998-08-25 | Sandia Corporation | Method for integrating microelectromechanical devices with electronic circuitry |
| CN1521847A (en) * | 2003-02-13 | 2004-08-18 | �¹������ҵ��ʽ���� | Electronic parts packaging structure and method of manufacturing the same |
| CN1581438A (en) * | 2003-08-04 | 2005-02-16 | 友达光电股份有限公司 | Multicrystalline silicon film manufacturing method |
| CN101217185A (en) * | 2007-01-04 | 2008-07-09 | 三星Sdi株式会社 | Organic light emitting diode display device and method of fabricating the same |
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| US5798283A (en) * | 1995-09-06 | 1998-08-25 | Sandia Corporation | Method for integrating microelectromechanical devices with electronic circuitry |
| CN1521847A (en) * | 2003-02-13 | 2004-08-18 | �¹������ҵ��ʽ���� | Electronic parts packaging structure and method of manufacturing the same |
| CN1581438A (en) * | 2003-08-04 | 2005-02-16 | 友达光电股份有限公司 | Multicrystalline silicon film manufacturing method |
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