JP5022116B2 - 半導体装置の製造方法及び製造装置 - Google Patents

半導体装置の製造方法及び製造装置 Download PDF

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Publication number
JP5022116B2
JP5022116B2 JP2007159739A JP2007159739A JP5022116B2 JP 5022116 B2 JP5022116 B2 JP 5022116B2 JP 2007159739 A JP2007159739 A JP 2007159739A JP 2007159739 A JP2007159739 A JP 2007159739A JP 5022116 B2 JP5022116 B2 JP 5022116B2
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JP
Japan
Prior art keywords
semiconductor device
gas
reaction
borazine skeleton
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007159739A
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English (en)
Japanese (ja)
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JP2008311548A (ja
Inventor
敏人 藤原
年彦 西森
俊哉 渡辺
直紀 保田
英治 信時
輝彦 熊田
千帆 水島
卓也 神山
哲也 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Mitsubishi Heavy Industries Ltd
Nippon Shokubai Co Ltd
Original Assignee
Mitsubishi Electric Corp
Mitsubishi Heavy Industries Ltd
Nippon Shokubai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Mitsubishi Electric Corp, Mitsubishi Heavy Industries Ltd, Nippon Shokubai Co Ltd filed Critical Mitsubishi Electric Corp
Priority to JP2007159739A priority Critical patent/JP5022116B2/ja
Priority to TW097120780A priority patent/TW200913061A/zh
Priority to EP08777183A priority patent/EP2159832A4/en
Priority to PCT/JP2008/060821 priority patent/WO2008156029A1/ja
Priority to KR1020097026331A priority patent/KR101180551B1/ko
Publication of JP2008311548A publication Critical patent/JP2008311548A/ja
Priority to US12/664,605 priority patent/US20100181654A1/en
Application granted granted Critical
Publication of JP5022116B2 publication Critical patent/JP5022116B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2007159739A 2007-06-18 2007-06-18 半導体装置の製造方法及び製造装置 Expired - Fee Related JP5022116B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007159739A JP5022116B2 (ja) 2007-06-18 2007-06-18 半導体装置の製造方法及び製造装置
TW097120780A TW200913061A (en) 2007-06-18 2008-06-04 Manufacturing method of semiconductor device, and insulating film for semiconductor device and manufacturing apparatus thereof
EP08777183A EP2159832A4 (en) 2007-06-18 2008-06-13 Process for producing semiconductor device, insulating film for semiconductor device, and apparatus for producing the insulating film
PCT/JP2008/060821 WO2008156029A1 (ja) 2007-06-18 2008-06-13 半導体装置の製造方法、半導体装置用絶縁膜及びその製造装置
KR1020097026331A KR101180551B1 (ko) 2007-06-18 2008-06-13 반도체 장치의 제조방법, 반도체 장치용 절연막 및 그의 제조장치
US12/664,605 US20100181654A1 (en) 2007-06-18 2009-06-13 Manufacturing method of semiconductor device, insulating film for semiconductor device, and manufacturing apparatus of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007159739A JP5022116B2 (ja) 2007-06-18 2007-06-18 半導体装置の製造方法及び製造装置

Publications (2)

Publication Number Publication Date
JP2008311548A JP2008311548A (ja) 2008-12-25
JP5022116B2 true JP5022116B2 (ja) 2012-09-12

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JP2007159739A Expired - Fee Related JP5022116B2 (ja) 2007-06-18 2007-06-18 半導体装置の製造方法及び製造装置

Country Status (6)

Country Link
US (1) US20100181654A1 (enExample)
EP (1) EP2159832A4 (enExample)
JP (1) JP5022116B2 (enExample)
KR (1) KR101180551B1 (enExample)
TW (1) TW200913061A (enExample)
WO (1) WO2008156029A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP2009102234A (ja) * 2007-10-20 2009-05-14 Nippon Shokubai Co Ltd 放熱材料形成用化合物
JP5330747B2 (ja) * 2008-06-30 2013-10-30 三菱重工業株式会社 半導体装置用絶縁膜、半導体装置用絶縁膜の製造方法及び製造装置、半導体装置及びその製造方法
US8749053B2 (en) * 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US8796795B2 (en) * 2011-08-01 2014-08-05 Avalanche Technology Inc. MRAM with sidewall protection and method of fabrication
US8709956B2 (en) 2011-08-01 2014-04-29 Avalanche Technology Inc. MRAM with sidewall protection and method of fabrication
US8536063B2 (en) 2011-08-30 2013-09-17 Avalanche Technology Inc. MRAM etching processes
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
US8574928B2 (en) 2012-04-10 2013-11-05 Avalanche Technology Inc. MRAM fabrication method with sidewall cleaning
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US20180347035A1 (en) 2012-06-12 2018-12-06 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US8883520B2 (en) 2012-06-22 2014-11-11 Avalanche Technology, Inc. Redeposition control in MRAM fabrication process
JP6007031B2 (ja) * 2012-08-23 2016-10-12 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
WO2014100506A1 (en) 2012-12-19 2014-06-26 Intevac, Inc. Grid for plasma ion implant
JP6159143B2 (ja) * 2013-05-10 2017-07-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
KR102194823B1 (ko) * 2014-03-06 2020-12-24 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터 기판, 표시 장치 및 박막 트랜지스터 제조 방법
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US10002787B2 (en) 2016-11-23 2018-06-19 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US10840087B2 (en) * 2018-07-20 2020-11-17 Lam Research Corporation Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films
CN113195786A (zh) 2018-10-19 2021-07-30 朗姆研究公司 用于间隙填充的远程氢等离子体暴露以及掺杂或未掺杂硅碳化物沉积

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JP3508629B2 (ja) * 1999-06-28 2004-03-22 三菱電機株式会社 耐熱低誘電率薄膜の形成方法、その耐熱低誘電率薄膜からなる半導体層間絶縁膜及びこの半導体層間絶縁膜を用いた半導体装置
US20020197402A1 (en) * 2000-12-06 2002-12-26 Chiang Tony P. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US7085616B2 (en) * 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
JP3836032B2 (ja) * 2002-02-01 2006-10-18 三菱重工業株式会社 プラズマｃｖｄ装置
JP3778164B2 (ja) * 2002-12-06 2006-05-24 三菱電機株式会社 低誘電率膜の形成方法
US7097886B2 (en) * 2002-12-13 2006-08-29 Applied Materials, Inc. Deposition process for high aspect ratio trenches
JP4986625B2 (ja) * 2004-10-19 2012-07-25 三菱電機株式会社 膜の製造方法および当該方法で製造された膜を用いた半導体装置
JP2007324536A (ja) * 2006-06-05 2007-12-13 Renesas Technology Corp 層間絶縁膜およびその製造方法、ならびに半導体装置

Also Published As

Publication number Publication date
JP2008311548A (ja) 2008-12-25
US20100181654A1 (en) 2010-07-22
EP2159832A1 (en) 2010-03-03
KR101180551B1 (ko) 2012-09-06
EP2159832A4 (en) 2011-09-28
TWI376747B (enExample) 2012-11-11
TW200913061A (en) 2009-03-16
WO2008156029A1 (ja) 2008-12-24
KR20100022472A (ko) 2010-03-02

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