JP5016183B2 - Cmosイメージセンサの製造方法 - Google Patents
Cmosイメージセンサの製造方法 Download PDFInfo
- Publication number
- JP5016183B2 JP5016183B2 JP2004088332A JP2004088332A JP5016183B2 JP 5016183 B2 JP5016183 B2 JP 5016183B2 JP 2004088332 A JP2004088332 A JP 2004088332A JP 2004088332 A JP2004088332 A JP 2004088332A JP 5016183 B2 JP5016183 B2 JP 5016183B2
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- JP
- Japan
- Prior art keywords
- region
- salicide
- layer
- gate electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000002265 prevention Effects 0.000 claims description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims 5
- 230000008021 deposition Effects 0.000 claims 1
- 239000005368 silicate glass Substances 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
11 フィールド酸化膜
12 ゲート絶縁膜
13A、13B、13C ゲート電極
14 ゲートスペーサ
15 サリサイド防止膜
16 BARC膜
17 第1フォトレジストパターン
18 第2フォトレジストパターン
20 第1領域
30 第2領域
40 第3領域
Claims (8)
- a)ゲート電極、サリサイド防止層、BARC層を有する半導体基板構造を作成するステップであって、前記ゲート電極、サリサイド防止膜、BARC層は、画素領域と周辺領域と入出力領域とを有する基板上に順次に形成されており、前記周辺領域に形成されたトランジスタのゲート電極が、前記画素領域に形成されたトランジスタのゲート電極より広いゲート幅を有している、ステップと、
b)前記画素領域の前記サリサイド防止層を露出させるため、第1のエッチバックプロセスを実行するステップであって、
b1)前記入出力領域の前記BARC層上に第1のフォトレジストマスクを形成するステップと、
b2)前記第1のフォトレジストマスクをエッチマスクとして使用して、前記画素領域の前記サリサイド防止層が露出されるまで前記第1のエッチバックプロセスを実行するステップと
を含む、ステップと、
c)前記周辺領域の前記サリサイド防止層を露出させるため、第2のエッチバックプロセスを実行するステップであって、
c1)前記画素領域の前記BARC層上に第2のフォトレジストマスクを形成するステップと、
c2)前記第2のフォトレジストマスクをエッチマスクとして使用して、前記周辺領域の前記サリサイド防止層が露出されるまで前記第2のエッチバックプロセスを実行するステップと
を含む、ステップと、
d)前記画素領域及び前記周辺領域の前記ゲート電極の上面を露出させるため、第3のエッチバックプロセスを実行するステップと
を含む、CMOSイメージセンサの製造方法。 - 前記サリサイド防止層が、高温低圧成膜(HLD)酸化物又はO3−非ドープケイ酸塩ガラス(USG)を使用する請求項1に記載の方法。
- 前記サリサイド防止層が、約600A〜約700Aの範囲の厚さを有して形成される請求項2に記載の方法。
- 前記第2のフォトレジストマスクが、nチャネルストップ用レチクル及びネガティブフォトレジストを使用する請求項1に記載の方法。
- 前記ステップa)の後、前記ステップb)の前に前記BARC層を硬化させるステップをさらに含む請求項1に記載の方法。
- 前記BARC層を硬化させるステップが、ハードベークプロセスを使用することによって実行される請求項5に記載の方法。
- 前記BARC層を硬化させるステップが、紫外(UV)ベークプロセスを使用することによって実行される請求項5に記載の方法。
- 前記ステップd)の後、
i)サリサイド層が形成されない部位に第3のフォトレジストマスクを形成するステップと、
j)前記第3のフォトレジストマスクで覆われていない残りの部位をエッチングし、サリサイド層が形成される前記残りの部位を露出させるステップと、
k)サリサイドプロセスを実行するステップと
をさらに含む請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2003-026970 | 2003-04-29 | ||
KR1020030026970A KR100984913B1 (ko) | 2003-04-29 | 2003-04-29 | 씨모스 이미지센서의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004327967A JP2004327967A (ja) | 2004-11-18 |
JP5016183B2 true JP5016183B2 (ja) | 2012-09-05 |
Family
ID=33308306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004088332A Expired - Lifetime JP5016183B2 (ja) | 2003-04-29 | 2004-03-25 | Cmosイメージセンサの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7005312B2 (ja) |
JP (1) | JP5016183B2 (ja) |
KR (1) | KR100984913B1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004304012A (ja) * | 2003-03-31 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
KR100684870B1 (ko) * | 2004-12-07 | 2007-02-20 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그 형성 방법 |
US20060183268A1 (en) * | 2005-02-14 | 2006-08-17 | Omnivision Technologies, Inc. | Salicide process for image sensor |
US7423306B2 (en) * | 2006-09-27 | 2008-09-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor devices |
KR102539472B1 (ko) * | 2016-07-13 | 2023-06-02 | 삼성전자주식회사 | 이미지 센서 제조 방법 |
US9997548B1 (en) * | 2017-05-11 | 2018-06-12 | Himax Technologies Limited | Method of fabricating semiconductor display apparatus |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6307214B1 (en) * | 1997-06-06 | 2001-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
KR100349644B1 (ko) * | 1999-11-19 | 2002-08-22 | 주식회사 하이닉스반도체 | 산화막 마이크로렌즈 제조 방법 및 그를 이용한 이미지센서의 제조방법 |
KR100683390B1 (ko) * | 1999-12-28 | 2007-02-15 | 매그나칩 반도체 유한회사 | 이미지센서의 제조 방법 |
US6194258B1 (en) * | 2000-01-18 | 2001-02-27 | Taiwan Semiconductor Manufacturing Company | Method of forming an image sensor cell and a CMOS logic circuit device |
JP3782297B2 (ja) | 2000-03-28 | 2006-06-07 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
KR100343148B1 (ko) * | 2000-11-10 | 2002-07-06 | 윤종용 | 반도체 소자의 콘택패드 형성방법 |
KR100388473B1 (ko) * | 2000-12-31 | 2003-06-25 | 주식회사 하이닉스반도체 | 이미지센서의 제조 방법 |
JP2002353330A (ja) * | 2001-05-25 | 2002-12-06 | Denso Corp | 半導体装置及びその製造方法 |
US6642076B1 (en) * | 2002-10-22 | 2003-11-04 | Taiwan Semiconductor Manufacturing Company | Asymmetrical reset transistor with double-diffused source for CMOS image sensor |
KR100479208B1 (ko) * | 2002-10-23 | 2005-03-28 | 매그나칩 반도체 유한회사 | 살리사이드 공정을 이용한 이미지센서의 제조 방법 |
KR100521966B1 (ko) * | 2003-04-29 | 2005-10-17 | 매그나칩 반도체 유한회사 | 씨모스 이미지센서의 제조방법 |
-
2003
- 2003-04-29 KR KR1020030026970A patent/KR100984913B1/ko active IP Right Grant
- 2003-12-23 US US10/746,044 patent/US7005312B2/en not_active Expired - Lifetime
-
2004
- 2004-03-25 JP JP2004088332A patent/JP5016183B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US7005312B2 (en) | 2006-02-28 |
JP2004327967A (ja) | 2004-11-18 |
KR100984913B1 (ko) | 2010-10-04 |
US20040219708A1 (en) | 2004-11-04 |
KR20040095940A (ko) | 2004-11-16 |
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