JP5009292B2 - Ｍｅｍｓデバイスにおける応力緩和機構およびその製造方法 - Google Patents

Ｍｅｍｓデバイスにおける応力緩和機構およびその製造方法 Download PDF

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Publication number
JP5009292B2
JP5009292B2 JP2008523897A JP2008523897A JP5009292B2 JP 5009292 B2 JP5009292 B2 JP 5009292B2 JP 2008523897 A JP2008523897 A JP 2008523897A JP 2008523897 A JP2008523897 A JP 2008523897A JP 5009292 B2 JP5009292 B2 JP 5009292B2
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Japan
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electrode
active layer
layer
substrate
anchor
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Expired - Fee Related
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JP2008523897A
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Japanese (ja)
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JP2009502530A5 (enExample
JP2009502530A (ja
Inventor
ジー． リ、ゲイリー
ヘイル ハモンド、ジョナサン
ジュニア、ダニエル エヌ． コーリー
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002—Electrostatic motors
    • H02N1/006—Electrostatic motors of the gap-closing type
    • H02N1/008—Laterally driven motors, e.g. of the comb-drive type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
JP2008523897A 2005-07-28 2006-06-28 Ｍｅｍｓデバイスにおける応力緩和機構およびその製造方法 Expired - Fee Related JP5009292B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/192,874 2005-07-28
US11/192,874 US7268463B2 (en) 2005-07-28 2005-07-28 Stress release mechanism in MEMS device and method of making same
PCT/US2006/025262 WO2007018814A2 (en) 2005-07-28 2006-06-28 Stress release mechanism in mems device and method of making same

Publications (3)

Publication Number Publication Date
JP2009502530A JP2009502530A (ja) 2009-01-29
JP2009502530A5 JP2009502530A5 (enExample) 2009-08-13
JP5009292B2 true JP5009292B2 (ja) 2012-08-22

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JP2008523897A Expired - Fee Related JP5009292B2 (ja) 2005-07-28 2006-06-28 Ｍｅｍｓデバイスにおける応力緩和機構およびその製造方法

Country Status (6)

Country Link
US (1) US7268463B2 (enExample)
JP (1) JP5009292B2 (enExample)
KR (1) KR101300935B1 (enExample)
CN (1) CN101317325B (enExample)
TW (1) TWI429116B (enExample)
WO (1) WO2007018814A2 (enExample)

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US7268463B2 (en) * 2005-07-28 2007-09-11 Freescale Semiconductor, Inc. Stress release mechanism in MEMS device and method of making same
US7637160B2 (en) * 2006-06-30 2009-12-29 Freescale Semiconductor, Inc. MEMS suspension and anchoring design
US7628072B2 (en) * 2006-07-19 2009-12-08 Freescale Semiconductor, Inc. MEMS device and method of reducing stiction in a MEMS device
US20080290430A1 (en) * 2007-05-25 2008-11-27 Freescale Semiconductor, Inc. Stress-Isolated MEMS Device and Method Therefor
TWI358235B (en) * 2007-12-14 2012-02-11 Ind Tech Res Inst Sensing membrane and micro-electro-mechanical syst
DE102007061096A1 (de) * 2007-12-19 2009-06-25 Robert Bosch Gmbh Mikromechanisches Bauelement mit auslenkfähigem Element
US8413509B2 (en) * 2008-04-14 2013-04-09 Freescale Semiconductor, Inc. Spring member for use in a microelectromechanical systems sensor
US8056415B2 (en) * 2008-05-30 2011-11-15 Freescale Semiconductor, Inc. Semiconductor device with reduced sensitivity to package stress
US8499629B2 (en) 2008-10-10 2013-08-06 Honeywell International Inc. Mounting system for torsional suspension of a MEMS device
JP2010190848A (ja) * 2009-02-20 2010-09-02 Panasonic Electric Works Co Ltd 半導体物理量センサ
JP5130237B2 (ja) * 2009-02-20 2013-01-30 パナソニック株式会社 半導体物理量センサ
US8138007B2 (en) * 2009-08-26 2012-03-20 Freescale Semiconductor, Inc. MEMS device with stress isolation and method of fabrication
TWI398400B (zh) * 2009-11-25 2013-06-11 Pixart Imaging Inc 適用於微機電感測器之質量體與使用該質量體之三軸微機電感測器
US8424383B2 (en) * 2010-01-05 2013-04-23 Pixart Imaging Incorporation Mass for use in a micro-electro-mechanical-system sensor and 3-dimensional micro-electro-mechanical-system sensor using same
CN101858927B (zh) * 2010-05-28 2012-05-09 南京理工大学 低应力硅微谐振式加速度计
US8551798B2 (en) * 2010-09-21 2013-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Microstructure with an enhanced anchor
CN101963624B (zh) * 2010-09-27 2012-09-12 南京理工大学 硅微谐振式加速度计
FR2966813A1 (fr) * 2010-10-29 2012-05-04 Thales Sa Microsysteme electromecanique (mems).
TWI415786B (zh) * 2010-12-30 2013-11-21 Pixart Imaging Inc 微機電系統元件以及用於其中之防止變形結構及其製作方法
US8610222B2 (en) * 2011-04-18 2013-12-17 Freescale Semiconductor, Inc. MEMS device with central anchor for stress isolation
JP5880877B2 (ja) 2012-05-15 2016-03-09 株式会社デンソー センサ装置
US8749036B2 (en) 2012-11-09 2014-06-10 Analog Devices, Inc. Microchip with blocking apparatus and method of fabricating microchip
US9676614B2 (en) 2013-02-01 2017-06-13 Analog Devices, Inc. MEMS device with stress relief structures
DE102014200507A1 (de) * 2014-01-14 2015-07-16 Robert Bosch Gmbh Mikromechanische Drucksensorvorrichtung und entsprechendes Herstellungsverfahren
US10167189B2 (en) 2014-09-30 2019-01-01 Analog Devices, Inc. Stress isolation platform for MEMS devices
WO2016119417A1 (zh) * 2015-01-30 2016-08-04 歌尔声学股份有限公司 一种加速度计的z轴结构及其生产方法
CN104569490B (zh) * 2015-01-30 2018-01-19 歌尔股份有限公司 一种加速度计的z轴结构及其生产方法
US10131538B2 (en) 2015-09-14 2018-11-20 Analog Devices, Inc. Mechanically isolated MEMS device
CN110668391B (zh) * 2019-08-27 2023-04-07 华东光电集成器件研究所 一种具有应力释放功能的双端固支板式mems结构
GB2591131A (en) * 2020-01-17 2021-07-21 Dolphitech As Ultrasound coupling shoe
US11417611B2 (en) 2020-02-25 2022-08-16 Analog Devices International Unlimited Company Devices and methods for reducing stress on circuit components
EP4162281A4 (en) 2020-06-08 2025-04-23 Analog Devices, Inc. MEMS STRESS REDUCTION GYROSCOPE
WO2021252398A1 (en) 2020-06-08 2021-12-16 Analog Devices, Inc. Drive and sense stress relief apparatus
US11981560B2 (en) 2020-06-09 2024-05-14 Analog Devices, Inc. Stress-isolated MEMS device comprising substrate having cavity and method of manufacture
US11698257B2 (en) 2020-08-24 2023-07-11 Analog Devices, Inc. Isotropic attenuated motion gyroscope
JP7626518B2 (ja) * 2020-10-26 2025-02-04 株式会社Sumco 貼り合わせウェーハ用の支持基板の製造方法、および貼り合わせウェーハ用の支持基板
CN116216629A (zh) * 2022-12-07 2023-06-06 麦斯塔微电子(深圳)有限公司 一种器件芯片中凹槽及间隙的加工方法
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Also Published As

Publication number Publication date
TWI429116B (zh) 2014-03-01
KR20080033299A (ko) 2008-04-16
TW200707815A (en) 2007-02-16
WO2007018814A2 (en) 2007-02-15
US20070024156A1 (en) 2007-02-01
JP2009502530A (ja) 2009-01-29
KR101300935B1 (ko) 2013-08-27
WO2007018814A3 (en) 2007-05-24
CN101317325A (zh) 2008-12-03
CN101317325B (zh) 2013-03-13
US7268463B2 (en) 2007-09-11

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