CN110668391B - 一种具有应力释放功能的双端固支板式mems结构 - Google Patents

一种具有应力释放功能的双端固支板式mems结构 Download PDF

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CN110668391B
CN110668391B CN201910793511.6A CN201910793511A CN110668391B CN 110668391 B CN110668391 B CN 110668391B CN 201910793511 A CN201910793511 A CN 201910793511A CN 110668391 B CN110668391 B CN 110668391B
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stress release
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何凯旋
喻磊
郭立建
姜楠
张胜兵
郭群英
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No 214 Institute of China North Industries Group Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system

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Abstract

本发明公开一种具有应力释放功能的双端固支板式MEMS结构，包括相互键合的衬底层与可动结构层，衬底层顶部中心设有空腔，衬底层顶部设有环形隔离槽，环形隔离槽位于空腔外周，环形隔离槽与空腔之间形成环形固定锚点；可动结构层包含可动结构外框，可动结构外框内设有双端固支板结构，可动结构外框与双端固支板结构之间形成环形应力释放槽，环形应力释放槽与环形隔离槽相对应；环形固定锚点对双端固支板结构形成支撑；双端固支板结构的四角与可动结构外框的四个内角之间分别对应设有应力释放连接梁；本发明在保证传感器谐振频率不降低的情况下极大地减小了传感器对热应力的敏感度。

Description

一种具有应力释放功能的双端固支板式MEMS结构
技术领域
本发明涉及微电子机械技术领域，具体是一种具有应力释放功能的双端固支板式MEMS结构。
背景技术
微机电系统（Micro Electro-Mechanical Systems,MEMS）是在微电子制造技术基础上发展起来的一门跨学科技术，利用光刻、刻蚀、成膜、键合等微细加工手段形成电子机械结构，融合了电子、材料、机械、物理、化学、生物等多种领域。MEMS以其小型化、低功耗、批量化生产、成本低等诸多优点吸引了人们的广泛关注，在消费电子、汽车电子、智能终端、物联网、生物医学、国防技术等领域有广泛应用。
双端固支板式结构是一种典型的压阻式MEMS加速度传感器敏感结构，具有谐振频率高的优点。当有外界加速度作用于敏感方向时，板式结构会产生位移，并在结构表面形成应力输出。可在板式结构表面制作压敏电阻，组成惠斯通电桥，压敏电阻在应力的作用下产生变化，使惠斯通电桥产生输出，从而可以测量加速度大小。
由于MEMS加速度传感器通常需要进行封装，例如塑封或者灌封，封装材料与硅材料的热膨胀系数不同，会导致热应力适配，当外界温度变化时，会引起加速度传感器敏感结构产生应力形变，使其零位指标产生严重的漂移。由于双端固支结构无法有效释放热应力，严重限制了该结构的实际应用。
发明内容
本发明的目的在于提供一种具有应力释放功能的双端固支板式MEMS结构，该MEMS结构适用于塑封或灌封的高冲击MEMS加速度传感器，在保证传感器谐振频率不降低的情况下极大地减小了传感器对热应力的敏感度。
本发明解决其技术问题所采用的技术方案是：
一种具有应力释放功能的双端固支板式MEMS结构，包括相互键合的衬底层与可动结构层，衬底层顶部中心设有空腔，其特征在于，所述衬底层顶部设有环形隔离槽，环形隔离槽位于空腔外周，环形隔离槽与空腔之间形成环形固定锚点；
所述可动结构层包含可动结构外框，可动结构外框内设有双端固支板结构，可动结构外框与双端固支板结构之间形成环形应力释放槽，环形应力释放槽与环形隔离槽相对应；环形固定锚点对双端固支板结构形成支撑；双端固支板结构的四角与可动结构外框的四个内角之间分别对应设有应力释放连接梁。
本发明的有益效果是，通过环形应力释放槽与环形隔离槽，可以将应力集中到环形隔离槽底部以及应力释放连接梁位置，减小双端固支板敏感板结构的弯曲程度，降低其受热应力的影响；另外，本发明隔离方式没有造成整体结构刚度的减弱，不影响敏感结构的谐振频率，抗过载性能也不受影响。
附图说明
下面结合附图和实施例对本发明进一步说明：
图1是本发明的结构示意图；
图2是本发明的俯视图；
图3是本发明衬底的放大示意图；
图4是图3的俯视图；
图5是本发明典型整体MEMS器件示意图。
具体实施方式
结合图1～4所示，本发明提供一种具有应力释放功能的双端固支板式MEMS结构，包括相互键合的衬底层1与可动结构层2，衬底层1与可动结构层2为全硅结构；衬底层1顶部中心设有空腔3，空腔3深度为1微米～30微米，可采用光刻和反应离子刻蚀或深反应离子刻蚀工艺制作；衬底层1顶部还设有环形隔离槽4，环形隔离槽4位于空腔3外周、且与空腔3同心；环形隔离槽4与空腔3之间形成环形固定锚点5；环形隔离槽4的深度为100微米～500微米，可采用光刻和深反应离子刻蚀工艺制作。
可动结构层2的硅片可为SOI硅片的顶层硅或者单晶硅片减薄形成；可动结构层的硅片通常为N型常阻硅片，典型电阻率1Ω•cm～100Ω•cm，可在该结构层上制作压敏电阻。
所述可动结构层包含可动结构外框6，可动结构外框6内设有双端固支板结构7，可动结构外框与双端固支板结构之间形成环形应力释放槽8，环形应力释放槽8与环形隔离槽4相对应；环形固定锚点5对双端固支板结构7形成支撑；双端固支板结构的四角与可动结构外框的四个内角之间分别对应设有应力释放连接梁9。所述可动结构外框6、双端固支板结构7、环形应力释放槽8与应力释放连接梁9可采用光刻和深反应离子刻蚀工艺进行释放槽刻蚀，一次加工即可形成可动结构层的所有结构。
应力释放连接梁9可以为倾斜排布的梁，也可以为垂直方向放置的梁，能够实现面内两个方向的应力集中；应力释放连接梁9还可以作为表层金属走线的支撑。
结合图5所示，作为典型整体MEMS器件的构成，还包括与可动结构层2相键合的盖帽10，盖帽10设有可动结构运动空腔11，并为可动结构的运动提供合适阻尼。
外界热应力容易使芯片产生弯曲，导致传统的双端固支敏感板结构产生过大的弯曲应力；而本发明通过环形应力释放槽与环形隔离槽，可以将应力集中到环形隔离槽底部以及应力释放连接梁位置，减小双端固支板敏感板结构的弯曲程度，降低其受热应力的影响；另外，本发明隔离方式没有造成整体结构刚度的减弱，不影响敏感结构的谐振频率，抗过载性能也不受影响。
通过结构仿真，在相同外界热应力条件下，可以将双端固支板结构的应力降低至传统结构的1/3，验证了本发明的技术效果。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (1)

1.一种具有应力释放功能的双端固支板式MEMS结构，包括相互键合的衬底层与可动结构层，衬底层顶部中心设有空腔，其特征在于，所述衬底层顶部设有环形隔离槽，环形隔离槽位于空腔外周，环形隔离槽与空腔之间形成环形固定锚点；
所述可动结构层包含可动结构外框，可动结构外框内设有双端固支板结构，可动结构外框与双端固支板结构之间形成环形应力释放槽，环形应力释放槽与环形隔离槽相对应；环形固定锚点对双端固支板结构形成支撑；双端固支板结构的四角与可动结构外框的四个内角之间分别对应设有应力释放连接梁。
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