TWI429116B - 微機電系統裝置中壓力釋放機構以及其之製造方法 - Google Patents

微機電系統裝置中壓力釋放機構以及其之製造方法 Download PDF

Info

Publication number
TWI429116B
TWI429116B TW095125136A TW95125136A TWI429116B TW I429116 B TWI429116 B TW I429116B TW 095125136 A TW095125136 A TW 095125136A TW 95125136 A TW95125136 A TW 95125136A TW I429116 B TWI429116 B TW I429116B
Authority
TW
Taiwan
Prior art keywords
electrode
active layer
substrate
layer
corner
Prior art date
Application number
TW095125136A
Other languages
English (en)
Chinese (zh)
Other versions
TW200707815A (en
Inventor
Gary G Li
Jonathan Hale Hammond
Daniel N Koury
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200707815A publication Critical patent/TW200707815A/zh
Application granted granted Critical
Publication of TWI429116B publication Critical patent/TWI429116B/zh

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002—Electrostatic motors
    • H02N1/006—Electrostatic motors of the gap-closing type
    • H02N1/008—Laterally driven motors, e.g. of the comb-drive type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
TW095125136A 2005-07-28 2006-07-10 微機電系統裝置中壓力釋放機構以及其之製造方法 TWI429116B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/192,874 US7268463B2 (en) 2005-07-28 2005-07-28 Stress release mechanism in MEMS device and method of making same

Publications (2)

Publication Number Publication Date
TW200707815A TW200707815A (en) 2007-02-16
TWI429116B true TWI429116B (zh) 2014-03-01

Family

ID=37693553

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125136A TWI429116B (zh) 2005-07-28 2006-07-10 微機電系統裝置中壓力釋放機構以及其之製造方法

Country Status (6)

Country Link
US (1) US7268463B2 (enExample)
JP (1) JP5009292B2 (enExample)
KR (1) KR101300935B1 (enExample)
CN (1) CN101317325B (enExample)
TW (1) TWI429116B (enExample)
WO (1) WO2007018814A2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7268463B2 (en) * 2005-07-28 2007-09-11 Freescale Semiconductor, Inc. Stress release mechanism in MEMS device and method of making same
US7637160B2 (en) * 2006-06-30 2009-12-29 Freescale Semiconductor, Inc. MEMS suspension and anchoring design
US7628072B2 (en) * 2006-07-19 2009-12-08 Freescale Semiconductor, Inc. MEMS device and method of reducing stiction in a MEMS device
US20080290430A1 (en) * 2007-05-25 2008-11-27 Freescale Semiconductor, Inc. Stress-Isolated MEMS Device and Method Therefor
TWI358235B (en) * 2007-12-14 2012-02-11 Ind Tech Res Inst Sensing membrane and micro-electro-mechanical syst
DE102007061096A1 (de) * 2007-12-19 2009-06-25 Robert Bosch Gmbh Mikromechanisches Bauelement mit auslenkfähigem Element
US8413509B2 (en) * 2008-04-14 2013-04-09 Freescale Semiconductor, Inc. Spring member for use in a microelectromechanical systems sensor
US8056415B2 (en) * 2008-05-30 2011-11-15 Freescale Semiconductor, Inc. Semiconductor device with reduced sensitivity to package stress
US8499629B2 (en) 2008-10-10 2013-08-06 Honeywell International Inc. Mounting system for torsional suspension of a MEMS device
JP2010190848A (ja) * 2009-02-20 2010-09-02 Panasonic Electric Works Co Ltd 半導体物理量センサ
JP5130237B2 (ja) * 2009-02-20 2013-01-30 パナソニック株式会社 半導体物理量センサ
US8138007B2 (en) * 2009-08-26 2012-03-20 Freescale Semiconductor, Inc. MEMS device with stress isolation and method of fabrication
TWI398400B (zh) * 2009-11-25 2013-06-11 Pixart Imaging Inc 適用於微機電感測器之質量體與使用該質量體之三軸微機電感測器
US8424383B2 (en) * 2010-01-05 2013-04-23 Pixart Imaging Incorporation Mass for use in a micro-electro-mechanical-system sensor and 3-dimensional micro-electro-mechanical-system sensor using same
CN101858927B (zh) * 2010-05-28 2012-05-09 南京理工大学 低应力硅微谐振式加速度计
US8551798B2 (en) * 2010-09-21 2013-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Microstructure with an enhanced anchor
CN101963624B (zh) * 2010-09-27 2012-09-12 南京理工大学 硅微谐振式加速度计
FR2966813A1 (fr) * 2010-10-29 2012-05-04 Thales Sa Microsysteme electromecanique (mems).
TWI415786B (zh) * 2010-12-30 2013-11-21 Pixart Imaging Inc 微機電系統元件以及用於其中之防止變形結構及其製作方法
US8610222B2 (en) * 2011-04-18 2013-12-17 Freescale Semiconductor, Inc. MEMS device with central anchor for stress isolation
JP5880877B2 (ja) 2012-05-15 2016-03-09 株式会社デンソー センサ装置
US8749036B2 (en) 2012-11-09 2014-06-10 Analog Devices, Inc. Microchip with blocking apparatus and method of fabricating microchip
US9676614B2 (en) 2013-02-01 2017-06-13 Analog Devices, Inc. MEMS device with stress relief structures
DE102014200507A1 (de) * 2014-01-14 2015-07-16 Robert Bosch Gmbh Mikromechanische Drucksensorvorrichtung und entsprechendes Herstellungsverfahren
US10167189B2 (en) 2014-09-30 2019-01-01 Analog Devices, Inc. Stress isolation platform for MEMS devices
WO2016119417A1 (zh) * 2015-01-30 2016-08-04 歌尔声学股份有限公司 一种加速度计的z轴结构及其生产方法
CN104569490B (zh) * 2015-01-30 2018-01-19 歌尔股份有限公司 一种加速度计的z轴结构及其生产方法
US10131538B2 (en) 2015-09-14 2018-11-20 Analog Devices, Inc. Mechanically isolated MEMS device
CN110668391B (zh) * 2019-08-27 2023-04-07 华东光电集成器件研究所 一种具有应力释放功能的双端固支板式mems结构
GB2591131A (en) * 2020-01-17 2021-07-21 Dolphitech As Ultrasound coupling shoe
US11417611B2 (en) 2020-02-25 2022-08-16 Analog Devices International Unlimited Company Devices and methods for reducing stress on circuit components
EP4162281A4 (en) 2020-06-08 2025-04-23 Analog Devices, Inc. MEMS STRESS REDUCTION GYROSCOPE
WO2021252398A1 (en) 2020-06-08 2021-12-16 Analog Devices, Inc. Drive and sense stress relief apparatus
US11981560B2 (en) 2020-06-09 2024-05-14 Analog Devices, Inc. Stress-isolated MEMS device comprising substrate having cavity and method of manufacture
US11698257B2 (en) 2020-08-24 2023-07-11 Analog Devices, Inc. Isotropic attenuated motion gyroscope
JP7626518B2 (ja) * 2020-10-26 2025-02-04 株式会社Sumco 貼り合わせウェーハ用の支持基板の製造方法、および貼り合わせウェーハ用の支持基板
CN116216629A (zh) * 2022-12-07 2023-06-06 麦斯塔微电子(深圳)有限公司 一种器件芯片中凹槽及间隙的加工方法
CN119024000B (zh) * 2024-08-20 2025-09-23 西安交通大学 具有应力隔离的mems电容式加速度传感器敏感结构及传感器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2728807B2 (ja) * 1991-07-24 1998-03-18 株式会社日立製作所 静電容量式加速度センサ
JPH07167885A (ja) * 1993-12-13 1995-07-04 Omron Corp 半導体加速度センサ及びその製造方法、ならびに当該半導体加速度センサによる加速度検出方式
JP3039364B2 (ja) * 1996-03-11 2000-05-08 株式会社村田製作所 角速度センサ
JP3960502B2 (ja) * 1999-03-16 2007-08-15 学校法人立命館 静電容量型センサ
US6445106B1 (en) * 2000-02-18 2002-09-03 Intel Corporation Micro-electromechanical structure resonator, method of making, and method of using
JP2001330623A (ja) * 2000-03-16 2001-11-30 Denso Corp 半導体力学量センサ
US6771001B2 (en) * 2001-03-16 2004-08-03 Optical Coating Laboratory, Inc. Bi-stable electrostatic comb drive with automatic braking
JP4722333B2 (ja) * 2001-07-02 2011-07-13 富士通株式会社 静電アクチュエータおよびその製造方法
US6798113B2 (en) * 2002-04-18 2004-09-28 Hewlett-Packard Development Company, L.P. Flexure with integral electrostatic actuator
JP4025990B2 (ja) * 2002-09-26 2007-12-26 セイコーエプソン株式会社 ミラーデバイス、光スイッチ、電子機器およびミラーデバイス駆動方法
JP2004347475A (ja) 2003-05-22 2004-12-09 Denso Corp 容量式力学量センサ
US6952041B2 (en) 2003-07-25 2005-10-04 Robert Bosch Gmbh Anchors for microelectromechanical systems having an SOI substrate, and method of fabricating same
CN100368862C (zh) * 2004-01-16 2008-02-13 侯继东 一种可调反射式装置
US7268463B2 (en) * 2005-07-28 2007-09-11 Freescale Semiconductor, Inc. Stress release mechanism in MEMS device and method of making same

Also Published As

Publication number Publication date
KR20080033299A (ko) 2008-04-16
TW200707815A (en) 2007-02-16
WO2007018814A2 (en) 2007-02-15
US20070024156A1 (en) 2007-02-01
JP2009502530A (ja) 2009-01-29
KR101300935B1 (ko) 2013-08-27
JP5009292B2 (ja) 2012-08-22
WO2007018814A3 (en) 2007-05-24
CN101317325A (zh) 2008-12-03
CN101317325B (zh) 2013-03-13
US7268463B2 (en) 2007-09-11

Similar Documents

Publication Publication Date Title
TWI429116B (zh) 微機電系統裝置中壓力釋放機構以及其之製造方法
EP2805913B1 (en) Active lateral force stiction self-recovery for microelectromechanical systems devices
EP2023151B1 (en) Sensor with position-indepedent drive electrodes in multi-layer silicon on insulator substrate
US8227876B2 (en) Single crystal silicon sensor with additional layer and method of producing the same
US9061895B2 (en) Micromechanical structure comprising a mobile part having stops for out-of plane displacements of the structure and its production process
CA2467503C (en) Accelerometer
US9573799B2 (en) MEMS device having variable gap width and method of manufacture
US7232701B2 (en) Microelectromechanical (MEM) device with a protective cap that functions as a motion stop
EP2776850B1 (en) Proof mass positioning features having curved contact surfaces
TWI395257B (zh) 在高深寬比微機電系統中寬溝槽及窄溝槽之形成
TWI399793B (zh) 加封微機電系統（ｍｅｍｓ）之基底接觸及在晶圓階段製作該基底接觸之方法
EP2460762A1 (en) MEMS device having reduced stiction and manufacturing method
US7273762B2 (en) Microelectromechanical (MEM) device including a spring release bridge and method of making the same
US7322240B2 (en) Micromachined comb capacitive accelerometer
JP2009200474A (ja) 単一ｓｏｉウェハ加速度計の製造方法
US20120048019A1 (en) Highly sensitive capacitive sensor and methods of manufacturing the same
CN210222061U (zh) 惯性传感器

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees