JP4993691B2 - ウエーハ裏面検査装置 - Google Patents

ウエーハ裏面検査装置 Download PDF

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Publication number
JP4993691B2
JP4993691B2 JP2006343564A JP2006343564A JP4993691B2 JP 4993691 B2 JP4993691 B2 JP 4993691B2 JP 2006343564 A JP2006343564 A JP 2006343564A JP 2006343564 A JP2006343564 A JP 2006343564A JP 4993691 B2 JP4993691 B2 JP 4993691B2
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Prior art keywords
wafer
back surface
imaging
illumination
inspection apparatus
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JP2006343564A
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Japanese (ja)
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JP2008131025A (ja
JP2008131025A5 (enrdf_load_stackoverflow
Inventor
学 藤戸
明宏 加倉井
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Nippon Electro Sensory Devices Corp
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Nippon Electro Sensory Devices Corp
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Priority to JP2006343564A priority Critical patent/JP4993691B2/ja
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Publication of JP2008131025A5 publication Critical patent/JP2008131025A5/ja
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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2006343564A 2006-11-21 2006-11-21 ウエーハ裏面検査装置 Active JP4993691B2 (ja)

Priority Applications (1)

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JP2006343564A JP4993691B2 (ja) 2006-11-21 2006-11-21 ウエーハ裏面検査装置

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JP2006343564A JP4993691B2 (ja) 2006-11-21 2006-11-21 ウエーハ裏面検査装置

Publications (3)

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JP2008131025A JP2008131025A (ja) 2008-06-05
JP2008131025A5 JP2008131025A5 (enrdf_load_stackoverflow) 2010-03-18
JP4993691B2 true JP4993691B2 (ja) 2012-08-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101442792B1 (ko) 2012-08-31 2014-09-23 (주)유텍시스템 사파이어 웨이퍼의 검사 방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408763B (zh) * 2009-08-12 2013-09-11 Utechzone Co Ltd A combination of wafer ejection devices and image capturing devices
US9939386B2 (en) * 2012-04-12 2018-04-10 KLA—Tencor Corporation Systems and methods for sample inspection and review
JP5825268B2 (ja) * 2013-01-21 2015-12-02 東京エレクトロン株式会社 基板検査装置
JP6598737B2 (ja) * 2016-06-21 2019-10-30 三菱電機株式会社 ウエハ検査装置
JP7093158B2 (ja) * 2017-01-06 2022-06-29 株式会社ディスコ 検査装置
JP7360687B2 (ja) * 2019-05-21 2023-10-13 株式会社昭和電気研究所 ウエハ検査装置
JP2021004769A (ja) * 2019-06-25 2021-01-14 住友金属鉱山株式会社 基板の検査装置、基板の検査方法
CN110533149B (zh) * 2019-07-19 2021-08-06 麦斯克电子材料股份有限公司 一种硅片背面损伤层自动计数的方法
KR102184780B1 (ko) 2019-12-24 2020-11-30 한화에어로스페이스 주식회사 그래핀의 합성 품질을 검사하는 방법 및 시스템
CN115808428B (zh) * 2022-11-16 2024-04-30 杭州盾源聚芯半导体科技有限公司 一种硅环伤痕检测设备及硅环返修工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0299806A (ja) * 1988-10-07 1990-04-11 Hitachi Metals Ltd 表面欠陥の検査方法
JPH0882603A (ja) * 1994-09-13 1996-03-26 Hamamatsu Photonics Kk 表面検査方法及び装置
JP3744176B2 (ja) * 1998-01-30 2006-02-08 株式会社Ｓｕｍｃｏ 半導体ウェーハの検査方法およびその装置
CN100370243C (zh) * 2001-09-21 2008-02-20 奥林巴斯株式会社 缺陷检查装置
JP2004069580A (ja) * 2002-08-08 2004-03-04 Nikon Corp マクロ検査装置およびマクロ検査方法
JP2008064595A (ja) * 2006-09-07 2008-03-21 Olympus Corp 基板検査装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101442792B1 (ko) 2012-08-31 2014-09-23 (주)유텍시스템 사파이어 웨이퍼의 검사 방법

Also Published As

Publication number Publication date
JP2008131025A (ja) 2008-06-05

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