JP4988263B2 - ウェハー補強裏打ち用可搬静電チャック(esc) - Google Patents
ウェハー補強裏打ち用可搬静電チャック(esc) Download PDFInfo
- Publication number
- JP4988263B2 JP4988263B2 JP2006194781A JP2006194781A JP4988263B2 JP 4988263 B2 JP4988263 B2 JP 4988263B2 JP 2006194781 A JP2006194781 A JP 2006194781A JP 2006194781 A JP2006194781 A JP 2006194781A JP 4988263 B2 JP4988263 B2 JP 4988263B2
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- Prior art keywords
- electrode
- electrostatic chuck
- wafer
- portable electrostatic
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 230000002787 reinforcement Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 21
- 230000005684 electric field Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 46
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 11
- 230000007547 defect Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 239000011888 foil Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Description
2 横方向絶縁体層
3 周囲電極
4 電極ユニット・セルのクラスター
5 集積されたヒューズ
6 蛇行して配置されたライン
7 バス・システム
8 上部誘電体層
8a 可搬静電チャックの表面
9 コンデンサ
10 電極ユニット・セル
11 可搬静電チャックの半導体ベース材料
12 可搬静電チャック上にクランプされるプロセス・ウェハー
13 電極のための外部コンタクト
14 アウタルキー・コンデンサのための個別のコンタクト
Claims (6)
- 搬送又は他のプロセス工程のための外部電力供給ユニットへの恒常的な接続なしに、クランプ電圧を印加することによってその上にプロセス・ウェハー(12)を静電気的にクランプするための第1の表面(8a)を含む、可動な可搬静電チャックであって、
不均一な電界をつくる、頂部に複数の電極を有する半導体ベース材料(11)であって、前記電極の各々が複数のバイポーラ電極ユニット・セル(10)からのモジュールで構成される半導体ベース材料と、
1つの内側ピーク電極(1)、横方向絶縁体層(2)、周囲電極(3)、及び上部誘電体層(8)を含む前記電極ユニット・セル(10)、
とを含み、前記電極ユニット・セル(10)がクラスター(4)に組み合わされており、
前記クラスター(4)の各々が、1つ又はそれ以上の集積されたヒューズ(5)に結合されており、
コンデンサ(9)、バッテリー又は蓄電池が設けられており、前記コンデンサ(9)、前記バッテリー又は前記蓄電池に蓄積されたエネルギーが、能動及び受動半導体構成要素に供給されることを特徴とする、
可動チャック。 - 前記電極ユニット・セル(10)が5μmを超えない長さ、及び5μmを超えない幅を有する、請求項1に記載の可動チャック。
- 前記クラスター(4)の各々が、4個から100,000個の前記電極ユニット・セル(10)から構成される、請求項1に記載の可動チャック。
- 前記電極の各々が、2つ又はそれ以上の前記クラスター(4)から構成される、請求項1に記載の可動チャック。
- 測定ユニット又は制御ユニット、プロセッサ又はデータ記録ユニットなど、集積された半導体構成要素が、前記半導体ベース材料(11)内に統合される、請求項1に記載の可動チャック。
- 前記半導体ベース材料(11)に集積される高電圧DMOSトランジスタなどのソリッド・ステート・スイッチが、前記電極をオン又はオフに切り替えるために適用される、請求項1に記載の可動チャック。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE202005011367.0 | 2005-07-18 | ||
DE202005011367U DE202005011367U1 (de) | 2005-07-18 | 2005-07-18 | Transfer-ESC auf Wafer-Basis |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007053348A JP2007053348A (ja) | 2007-03-01 |
JP4988263B2 true JP4988263B2 (ja) | 2012-08-01 |
Family
ID=35070969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006194781A Expired - Fee Related JP4988263B2 (ja) | 2005-07-18 | 2006-07-14 | ウェハー補強裏打ち用可搬静電チャック(esc) |
Country Status (6)
Country | Link |
---|---|
US (1) | US7564672B2 (ja) |
JP (1) | JP4988263B2 (ja) |
KR (1) | KR20070011146A (ja) |
DE (1) | DE202005011367U1 (ja) |
GB (1) | GB2428518B (ja) |
SG (1) | SG129375A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202005011367U1 (de) * | 2005-07-18 | 2005-09-29 | Retzlaff, Udo, Dr. | Transfer-ESC auf Wafer-Basis |
SG148884A1 (en) * | 2007-06-15 | 2009-01-29 | Micron Technology Inc | Method and system for removing tape from substrates |
US7989022B2 (en) * | 2007-07-20 | 2011-08-02 | Micron Technology, Inc. | Methods of processing substrates, electrostatic carriers for retaining substrates for processing, and assemblies comprising electrostatic carriers having substrates electrostatically bonded thereto |
US8005383B2 (en) * | 2007-10-25 | 2011-08-23 | Seiko Epson Corporation | Liquid developer collecting system and image forming apparatus including the same |
JPWO2009113317A1 (ja) * | 2008-03-13 | 2011-07-21 | 株式会社ニコン | 基板ホルダ、基板ホルダユニット、基板搬送装置および基板貼り合わせ装置 |
EP2330619B1 (en) * | 2008-09-17 | 2019-06-12 | Creative Technology Corporation | Substrate processing apparatus and substrate processing method |
US8268645B2 (en) | 2010-12-29 | 2012-09-18 | Twin Creeks Technologies, Inc. | Method and apparatus for forming a thin lamina |
US8435804B2 (en) | 2010-12-29 | 2013-05-07 | Gtat Corporation | Method and apparatus for forming a thin lamina |
US20120227886A1 (en) * | 2011-03-10 | 2012-09-13 | Taipei Semiconductor Manufacturing Company, Ltd. | Substrate Assembly Carrier Using Electrostatic Force |
EP2525389A1 (en) | 2011-05-18 | 2012-11-21 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Electrostatic clamp and method of making said electrostatic clamp |
US9472410B2 (en) * | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
CN107431040B (zh) | 2015-04-15 | 2020-10-16 | 株式会社爱发科 | 吸附装置、真空处理装置 |
US20180025931A1 (en) * | 2016-07-22 | 2018-01-25 | Applied Materials, Inc. | Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing |
CN111128834B (zh) * | 2018-10-31 | 2022-09-06 | 成都辰显光电有限公司 | 微元件转移设备及其制作方法 |
Family Cites Families (26)
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US4184188A (en) | 1978-01-16 | 1980-01-15 | Veeco Instruments Inc. | Substrate clamping technique in IC fabrication processes |
US4384918A (en) | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
JPS6059104B2 (ja) | 1982-02-03 | 1985-12-23 | 株式会社東芝 | 静電チヤツク板 |
US4551192A (en) | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
US4692836A (en) | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
US4724510A (en) | 1986-12-12 | 1988-02-09 | Tegal Corporation | Electrostatic wafer clamp |
JP2665242B2 (ja) | 1988-09-19 | 1997-10-22 | 東陶機器株式会社 | 静電チャック |
EP0460955A1 (en) | 1990-06-08 | 1991-12-11 | Varian Associates, Inc. | Clamping a workpiece utilizing polyphase clamping voltage |
US5646814A (en) | 1994-07-15 | 1997-07-08 | Applied Materials, Inc. | Multi-electrode electrostatic chuck |
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US5838529A (en) | 1995-12-22 | 1998-11-17 | Lam Research Corporation | Low voltage electrostatic clamp for substrates such as dielectric substrates |
US5751537A (en) | 1996-05-02 | 1998-05-12 | Applied Materials, Inc. | Multielectrode electrostatic chuck with fuses |
US6055150A (en) * | 1996-05-02 | 2000-04-25 | Applied Materials, Inc. | Multi-electrode electrostatic chuck having fuses in hollow cavities |
JP3992768B2 (ja) * | 1996-08-20 | 2007-10-17 | 筑波精工株式会社 | 誘電体や絶縁体からなる浮上体の静電浮上装置 |
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US5880924A (en) * | 1997-12-01 | 1999-03-09 | Applied Materials, Inc. | Electrostatic chuck capable of rapidly dechucking a substrate |
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DE50114392D1 (de) * | 2000-08-02 | 2008-11-20 | Fraunhofer Ges Forschung | Mobiler halter für einen wafer |
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JP4676098B2 (ja) * | 2001-07-30 | 2011-04-27 | 株式会社アルバック | 吸着装置 |
AT6926U1 (de) | 2003-03-13 | 2004-05-25 | Ventec Ges Fuer Venturekapital | Mobile transportable elektrostatische substrathalter |
DE102004030723A1 (de) | 2004-06-25 | 2006-02-02 | VenTec Gesellschaft für Venturekapital und Unternehmensberatung mbH | Mobiler, elektrostatischer Substrathalter |
DE102004041049A1 (de) | 2004-07-02 | 2006-01-26 | VenTec Gesellschaft für Venturekapital und Unternehmensberatung mbH | Mobiler, elektrostatischer Substrathalter und Verfahren zur Herstellung des Substrathalters |
DE202005011367U1 (de) * | 2005-07-18 | 2005-09-29 | Retzlaff, Udo, Dr. | Transfer-ESC auf Wafer-Basis |
-
2005
- 2005-07-18 DE DE202005011367U patent/DE202005011367U1/de not_active Expired - Lifetime
-
2006
- 2006-06-14 GB GB0611846A patent/GB2428518B/en not_active Expired - Fee Related
- 2006-06-19 US US11/455,208 patent/US7564672B2/en not_active Expired - Fee Related
- 2006-07-14 JP JP2006194781A patent/JP4988263B2/ja not_active Expired - Fee Related
- 2006-07-15 SG SG200604638A patent/SG129375A1/en unknown
- 2006-07-18 KR KR1020060066989A patent/KR20070011146A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE202005011367U1 (de) | 2005-09-29 |
US20070014073A1 (en) | 2007-01-18 |
US7564672B2 (en) | 2009-07-21 |
SG129375A1 (en) | 2007-02-26 |
GB2428518A (en) | 2007-01-31 |
GB0611846D0 (en) | 2006-07-26 |
GB2428518B (en) | 2009-05-20 |
KR20070011146A (ko) | 2007-01-24 |
JP2007053348A (ja) | 2007-03-01 |
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