JP4986963B2 - 結晶成長炉本体用の冷却構造 - Google Patents
結晶成長炉本体用の冷却構造 Download PDFInfo
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- JP4986963B2 JP4986963B2 JP2008249797A JP2008249797A JP4986963B2 JP 4986963 B2 JP4986963 B2 JP 4986963B2 JP 2008249797 A JP2008249797 A JP 2008249797A JP 2008249797 A JP2008249797 A JP 2008249797A JP 4986963 B2 JP4986963 B2 JP 4986963B2
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- 238000001816 cooling Methods 0.000 title claims description 39
- 239000013078 crystal Substances 0.000 title claims description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 113
- 239000007921 spray Substances 0.000 claims description 17
- 238000009423 ventilation Methods 0.000 claims description 7
- 238000009428 plumbing Methods 0.000 claims 1
- 239000003570 air Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Furnace Housings, Linings, Walls, And Ceilings (AREA)
- Silicon Compounds (AREA)
Description
さらに、上側および下側密封空間910、920は大量の冷却純水で満たされ、予期しない亀裂が、長期使用、欠陥製造、または炉の動作不良のために内側上シェル912と内側下シェル922で生じる場合があるため、純水は継続的に結晶成長炉の内部空間90に流れ込み、内部空間90は高温状態下にある。その結果、グラファイト製の設備は水と激しく反応して、大量の水素(H2)、一酸化炭素(CO)、および水蒸気が放出されて、公共の安全性に関わる事故、たとえば結晶成長炉全体の爆発などを引き起こしかねない。
少なくとも1つの給水管および少なくとも1つの水入口管はそれぞれ、上側および下側密封空間の周囲に設けられ、複数の噴霧孔が少なくとも1つの給水管および少なくとも1つの水入口管のそれぞれに設けられる。
したがって、上記の水噴霧の方法で、冷却効果を実現することができる。さらに、大量の純水が必要とされ、公共の安全性に関わる重大な事故が生じるという従来技術に内在する欠陥を克服することができる。
本発明の他の目的、利点、および新規な特徴は、添付の図面と組み合わせて解釈したとき以下の詳細な説明から自明になるであろう。
水管14および水入口管24とそれぞれ連通される。ポンプ3の助けを借りて、外部水源
、たとえば、タンクからの水が、水入口管24の噴霧孔241を介して内側下シェル22
上に水を噴霧し、内側上シェル12および内側下シェル22の外部表面に水を噴霧して結
晶成長炉本体の温度を下げるように、給水管14の噴霧孔141を介してくみ出される。
ポンプ3は、緊急送水管15、25とポンプ3間に接続される制御バルブ31を含むことができる。緊急時、制御信号Cが制御バルブ31を開放するように入力されて、追加の水を外部水源からポンプで引き出し、緊急送水管の複数のシャワー孔151、251を介して内側上シェル12と内側下シェル22に水を浴びせることで、結晶成長炉本体を急速に冷却させ、さらなる事故を回避することができる。
Claims (7)
- 上側本体および下側本体を備え、密閉炉室を形成するように前記下側本体が前記上側本
体の底部に装着される結晶成長炉本体用の冷却構造であって、前記上側本体は外側上シェ
ルおよび内側上シェルを含み、前記外側上シェルと前記内側上シェルはどちらも円柱状で
あり、前記外側上シェルは前記内側上シェルを覆い、上側密封空間は前記外側上シェルと
前記内側上シェルの間に形成され、少なくとも1つの給水管が前記上側密封空間の周囲に
配置され、複数の噴霧孔が前記少なくとも1つの給水管に設けられ、ポンプが前記少なく
とも1つの給水管に連通し、前記ポンプの助けを借りて、外部水源からの水が、前記内側
上シェル上に水を噴霧するように前記少なくとも1つの給水管の前記噴霧孔を通じてくみ
出され、前記上側本体は前記上側密封空間の周囲に配置される少なくとも1つの緊急送水管をさらに含み、複数のシャワー孔が前記少なくとも1つの緊急送水管に設けられ、前記ポンプは前記少なくとも1つの緊急送水管と前記ポンプの間に接続される制御バルブを含み、前記制御バルブを開放することによって、前記ポンプは外部水源から追加の水を引き出し、前記少なくとも1つの緊急送水管の複数のシャワー孔を介して、緊急時に前記内側上シェルの表面に水を浴びせることを特徴とする結晶成長炉本体用の冷却構造。 - 上側本体および下側本体を備え、密閉炉室を形成するように前記下側本体が前記上側本
体の底部に装着される結晶成長炉本体用の冷却構造であって、前記上側本体は外側上シェ
ルおよび内側上シェルを含み、前記外側上シェルと前記内側上シェルはどちらも円柱状で
あり、前記外側上シェルは前記内側上シェルを覆い、上側密封空間は前記外側上シェルと
前記内側上シェルの間に形成され、少なくとも1つの給水管が前記上側密封空間の周囲に
配置され、複数の噴霧孔が前記少なくとも1つの給水管に設けられ、ポンプが前記少なく
とも1つの給水管に連通し、前記ポンプの助けを借りて、外部水源からの水が、前記内側
上シェル上に水を噴霧するように前記少なくとも1つの給水管の前記噴霧孔を通じてくみ
出され、前記外側上シェルがその周囲に吸気口として複数のネット孔を、その上部に排気口を設けたことを特徴とする結晶成長炉本体用の冷却構造。 - 前記上側本体に、前記外側上シェルの排気口に配置される換気扇が設けられる請求項2
に記載の結晶成長炉本体用の冷却構造。 - 前記外側上シェルには外周に、前記複数の吸気口の上縁に配置される複数の斜めのフィ
ンが設けられる請求項2に記載の結晶成長炉本体用の冷却構造。 - 前記上側本体には、前記上側密封空間の下に配置される一端と、水を前記結晶成長炉の
外に流れるように誘導する他端とを有する少なくとも1つの水フィードバック管が設けられる請求項1に記載の結晶成長炉本体用の冷却構造。 - 上側本体および下側本体を備え、密閉炉室を形成するように前記下側本体が前記上側本
体の底部に装着される結晶成長炉本体用の冷却構造であって、前記下側本体は外側下シェ
ルおよび内側下シェルを含み、前記外側下シェルと前記内側下シェルはどちらも椀状形状
であり、前記外側下シェルは前記内側下シェルを覆い、下側密封空間は前記外側下シェルと前記内側下シェルの間に形成され、少なくとも1つの水入口管が前記下側密封空間の周囲に配置され、複数の噴霧孔が前記少なくとも1つの水入口管に設けられ、ポンプが前記少なくとも1つの水入口管に連通し、前記ポンプの助けを借りて、外部水源からの水が、前記内側下シェル上に水を噴霧するように少なくとも1つの水入口管の前記噴霧孔を通じてくみ出され、前記下側本体は前記下側密封空間の周囲に配置される少なくとも1つの緊急送水管をさらに含み、複数のシャワー孔が前記少なくとも1つの緊急送水管に設けられ、前記ポンプは前記少なくとも1つの緊急送水管と前記ポンプの間に接続される制御バルブを含み、前記制御バルブを開放することによって、前記ポンプは外部水源から追加の水を引き出し、前記少なくとも1つの緊急送水管の複数のシャワー孔を介して、緊急時に前記内側下シェルの表面に水を浴びせることを特徴とする結晶成長炉本体用の冷却構造。 - 前記下側本体には、前記下側密封空間の下に配置される一端と、水を前記結晶成長炉の
外に流れるように誘導する他端とを有する少なくとも1つの水フィードバック管が設けられる請求項6に記載の結晶成長炉本体用の冷却構造。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW097100176 | 2008-01-03 | ||
| TW097100176A TW200930850A (en) | 2008-01-03 | 2008-01-03 | Cooling structure for body of crystal growth furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009162474A JP2009162474A (ja) | 2009-07-23 |
| JP4986963B2 true JP4986963B2 (ja) | 2012-07-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008249797A Expired - Fee Related JP4986963B2 (ja) | 2008-01-03 | 2008-09-29 | 結晶成長炉本体用の冷却構造 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7604698B2 (ja) |
| JP (1) | JP4986963B2 (ja) |
| DE (1) | DE102008025831B4 (ja) |
| TW (1) | TW200930850A (ja) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200930852A (en) * | 2008-01-03 | 2009-07-16 | Green Energy Technology Inc | Supporting table having heater within a crystal growth furnace |
| WO2010007365A1 (en) * | 2008-07-15 | 2010-01-21 | Oxford Biomedica (Uk) Ltd | Immunotherapeutic method |
| CN102538479B (zh) * | 2012-03-02 | 2013-08-28 | 重庆大全新能源有限公司 | 一种冷却循环冷却水的装置及方法 |
| CN102747415B (zh) * | 2012-07-02 | 2014-09-17 | 浙江宏业新能源有限公司 | 多晶铸锭炉干式炉壳 |
| CN102767956A (zh) * | 2012-07-27 | 2012-11-07 | 江阴东辰机械制造股份有限公司 | 喷淋式水冷炉壳 |
| CN102744580B (zh) * | 2012-07-28 | 2014-12-31 | 浙江宏业新能源有限公司 | 一种多晶铸锭炉的炉体制造方法 |
| JP6180145B2 (ja) * | 2013-03-26 | 2017-08-16 | 三菱日立パワーシステムズ株式会社 | 吸気冷却装置 |
| CN105241254A (zh) * | 2015-12-01 | 2016-01-13 | 无锡市晶瑜冶金机械有限公司 | 水冷却风干系统的干燥风送风装置 |
| CN107526417A (zh) * | 2017-09-29 | 2017-12-29 | 翟策 | 一种高性能主机水冷散热平台 |
| CN107723792A (zh) * | 2017-11-20 | 2018-02-23 | 江苏高照新能源发展有限公司 | 一种低位错密度的g8高效硅锭的制备方法 |
| CN110886015A (zh) * | 2019-11-25 | 2020-03-17 | 大同新成新材料股份有限公司 | 一种用于多晶硅的热场坩埚调节式保温设备 |
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2008
- 2008-01-03 TW TW097100176A patent/TW200930850A/zh not_active IP Right Cessation
- 2008-05-28 US US12/153,917 patent/US7604698B2/en not_active Expired - Fee Related
- 2008-05-29 DE DE102008025831A patent/DE102008025831B4/de not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| DE102008025831A1 (de) | 2009-07-16 |
| JP2009162474A (ja) | 2009-07-23 |
| US7604698B2 (en) | 2009-10-20 |
| US20090173277A1 (en) | 2009-07-09 |
| DE102008025831B4 (de) | 2012-02-23 |
| TWI346154B (ja) | 2011-08-01 |
| TW200930850A (en) | 2009-07-16 |
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