JP4979896B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP4979896B2
JP4979896B2 JP2005127201A JP2005127201A JP4979896B2 JP 4979896 B2 JP4979896 B2 JP 4979896B2 JP 2005127201 A JP2005127201 A JP 2005127201A JP 2005127201 A JP2005127201 A JP 2005127201A JP 4979896 B2 JP4979896 B2 JP 4979896B2
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light emitting
emitting device
led chip
light
recess
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JP2006303397A (en
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良二 横谷
拓磨 橋本
正喜 小林
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Description

本発明は、発光ダイオード（ＬＥＤ）チップを用いた発光装置に関する。   The present invention relates to a light emitting device using a light emitting diode (LED) chip.

近年、青色ＬＥＤチップを黄色蛍光体と組み合わせ、青色ＬＥＤの青色発光と黄色蛍光体の黄色発光との混色により白色発光が可能なＬＥＤ発光装置が開発されている。このような発光装置は、照明用途に用いるために、ＬＥＤチップに供給する電力が格段に増加する傾向にある。しかしながら、現在の青色ＬＥＤの主流であるＩｎＧａＮ系化合物半導体ＬＥＤの効率は１０％程度であり、供給した電力の大半は熱になる。ＬＥＤチップの効率は温度依存性を持ち、どのような材料のＬＥＤチップであれ、高温になるほど効率が低下する傾向を有している。従って、ＬＥＤチップの温度を上昇させないようにするために、高電力を供給しながらも、如何にＬＥＤチップから周囲に熱を逃がすかということが重要な課題となる。   In recent years, LED light-emitting devices capable of emitting white light by combining a blue LED chip with a yellow phosphor and mixing blue light emitted from the blue LED and yellow light emitted from the yellow phosphor have been developed. Since such a light-emitting device is used for lighting applications, the power supplied to the LED chip tends to increase dramatically. However, the efficiency of InGaN-based compound semiconductor LEDs, which are the mainstream of current blue LEDs, is about 10%, and most of the supplied power is converted to heat. The efficiency of the LED chip has temperature dependence, and the LED chip of any material has a tendency to decrease as the temperature increases. Therefore, in order not to raise the temperature of the LED chip, it is an important issue how to release heat from the LED chip to the surroundings while supplying high power.

現在のＬＥＤ発光装置では、配線基板上にリフロー工法等を用いて自動実装した表面実装型のＬＥＤ発光装置（以下、ＳＭＤ（Surface Mount Device）型ＬＥＤ発光装置という）が主流になりつつある。ＳＭＤ型ＬＥＤ発光装置は、表面に配線部が形成された樹脂製の実装基板上にＬＥＤチップを実装し、ＬＥＤチップと実装基板上の配線部とを導電性ワイヤー等で電気的に接続し、該ＬＥＤチップの周囲を透光性樹脂で封止した構造が一般的である。   Among current LED light emitting devices, surface mount type LED light emitting devices (hereinafter referred to as SMD (Surface Mount Device) type LED light emitting devices) that are automatically mounted on a wiring board using a reflow method or the like are becoming mainstream. The SMD type LED light emitting device mounts an LED chip on a resin mounting substrate having a wiring portion formed on the surface, and electrically connects the LED chip and the wiring portion on the mounting substrate with a conductive wire, A structure in which the periphery of the LED chip is sealed with a translucent resin is common.

ＬＥＤチップから周囲に熱を逃がすという課題に対して、従来から実装基板の材料として用いられていた樹脂は一般に熱伝導率が小さいため、最近では、樹脂に比べて１桁以上熱伝導率が大きい、アルミナや窒化アルミニウムなどのセラミック材料を用いようとする技術的傾向にある。しかしながら、セラミック材料は樹脂に比べて製造コストが大きく、商品として広く流布するには至っていないのが現状である。このため、さらに安価で熱伝導率に優れる実装基板材料が求められている。   In response to the problem of releasing heat from the LED chip to the surroundings, resins conventionally used as mounting board materials generally have a low thermal conductivity, so recently they have a thermal conductivity that is an order of magnitude greater than that of resins. There is a technical tendency to use ceramic materials such as alumina and aluminum nitride. However, the manufacturing cost of ceramic materials is higher than that of resins, and the current situation is that they have not been widely distributed as commercial products. For this reason, the mounting substrate material which is further cheap and excellent in thermal conductivity is demanded.

また、ＬＥＤチップから出射される光を最大限利用するために、ＬＥＤチップの周囲に反射部を設け、ＬＥＤチップから側面ないし背面方向に出射された光をできるだけ発光装置の正面方向へ向けて照射できるようにした発光装置が知られている。このような発光装置は、一般的に、ＬＥＤチップを収納するための凹部を実装部材（実装基板）に形成し、この凹部の底面部にＬＥＤチップを実装して、凹部の側壁部等でＬＥＤチップから出射された光を反射できるようにしている。例えば、液品ポリマー系の白色樹脂には反射率が約８５％のものがあり、このような樹脂で反射部を形成した発光装置が知られている。   In order to make maximum use of the light emitted from the LED chip, a reflective part is provided around the LED chip, and the light emitted from the LED chip in the side or back direction is irradiated as far as possible in the front direction of the light emitting device. A light-emitting device that can be used is known. In such a light emitting device, generally, a concave portion for housing the LED chip is formed in a mounting member (mounting substrate), the LED chip is mounted on the bottom surface portion of the concave portion, and the LED is formed on the side wall portion of the concave portion. The light emitted from the chip can be reflected. For example, some liquid polymer-based white resins have a reflectance of about 85%, and a light emitting device in which a reflection portion is formed of such a resin is known.

しかしながら、樹脂を反射部として用いた場合、照明用の青色ＬＥＤチップに代表されるようなＬＥＤの短波長化、高出力化に伴い、点灯に伴う樹脂の劣化変色の危険性が指摘されている。また、セラミック材料を実装部材に用いた場合、樹脂の場合のような劣化変色の可能性は小さいが、一般に純度が低いセラミック材料は有色であり反射率が低いという問題がある。その一方、純度の高いアルミナや窒化アルミニウムは白色に近く、例えばアルミナでは８５％程度の反射率を有するものもある。しかしながら純度の高いものは透過率も大きく、反射されない光の一部はセラミック材料内を透過してしまい、発光装置の側面から出た光が正面から出た光とは異なる色味を与えるという問題がある。このため、光反射率に優れ、光透過率が小さく、ＬＥＤによる熱劣化、光劣化の可能性が無い安価な実装基板材料が求められている。   However, when resin is used as the reflecting part, there is a risk of deterioration of the resin due to lighting, along with shortening of the wavelength and higher output of the LED represented by the blue LED chip for illumination. . Further, when a ceramic material is used for a mounting member, the possibility of deterioration discoloration as in the case of a resin is small, but generally a ceramic material with low purity has a problem that it is colored and has a low reflectance. On the other hand, high-purity alumina and aluminum nitride are nearly white, and for example, alumina has a reflectance of about 85%. However, the high purity has a high transmittance, and a part of the light that is not reflected is transmitted through the ceramic material, so that the light emitted from the side surface of the light emitting device gives a different color from the light emitted from the front. There is. For this reason, there is a need for an inexpensive mounting substrate material that has excellent light reflectivity, low light transmittance, and no possibility of thermal degradation or light degradation due to LEDs.

一方、上述ような問題を解決するために、例えば、特許文献１に記載されるような発光装置が知られている。特許文献１に記載される発光装置は、ＬＥＤチップと、ＬＥＤチップを収納するための凹部が形成された実装部材とを備えている。実装部材は、ＬＥＤチップの１対の電極に電気的に接続される１対の金属板と、これら金属板の間に挟まれてこれら金属板を電気的に絶縁する絶縁部とを有している。１対の金属板は正負の電極であり、ＬＥＤチップのｐ側、ｎ側電極に、それぞれ電気的に接続される。セラミック材料と同等ないしそれ以上に熱伝導率を有する金属を実装部材に用いることにより、ＬＥＤチップの放熱性が改善される。また、発光装置の金属板は、反射部としても機能する。種類にもよるが金属は一般に光反射率に優れ、光透過率が小さく、ＬＥＤによる熱劣化、光劣化の可能性も小さいので、長期に亘り発光装置の正面方向への光出力を維持することができる。
特開２００３−３０３９９９号公報 On the other hand, in order to solve the above-mentioned problems, for example, a light emitting device as described in Patent Document 1 is known. The light emitting device described in Patent Document 1 includes an LED chip and a mounting member in which a recess for housing the LED chip is formed. The mounting member includes a pair of metal plates that are electrically connected to the pair of electrodes of the LED chip, and an insulating portion that is sandwiched between the metal plates to electrically insulate the metal plates. The pair of metal plates are positive and negative electrodes, and are electrically connected to the p-side and n-side electrodes of the LED chip, respectively. By using a metal having a thermal conductivity equivalent to or higher than that of the ceramic material for the mounting member, the heat dissipation of the LED chip is improved. Further, the metal plate of the light emitting device also functions as a reflecting portion. Depending on the type, metals generally have excellent light reflectivity, low light transmittance, and low LED thermal and light degradation, so the light output in the front direction of the light-emitting device should be maintained for a long time. Can do.
JP 2003-303999 A

上述したように、特許文献１に記載される発光装置においては、実装部材として凹部が形成された金属板を用いたことにより、放熱性、光反射性が改善されている。しかしながら、これら１対の金属板は反射部を形成すると共に正負の電極でもあるので、凹部の底面部のみならず、凹部の側壁部も電気的に絶縁する必要があり、側壁部にも樹脂等で絶縁部を形成する必要がある。このため、反射部全体としての反射率は、反射部全体が金属である場合に比べて劣り、点灯に伴う樹脂の劣化変色によりさらに低下してしまうという問題があった。   As described above, in the light emitting device described in Patent Document 1, the heat dissipation and light reflectivity are improved by using a metal plate having a recess formed as a mounting member. However, since the pair of metal plates form a reflection portion and are also positive and negative electrodes, it is necessary to electrically insulate not only the bottom surface portion of the recess but also the side wall portion of the recess. It is necessary to form an insulating part. For this reason, the reflectance as the whole reflection part is inferior compared with the case where the whole reflection part is a metal, and there existed a problem that it will fall further by degradation deterioration of the resin accompanying lighting.

本発明は、かかる点に鑑みてなされたものであり、高い放熱性を有すると共に光反射性に優れる発光装置を提供することを目的とする。   This invention is made | formed in view of this point, and it aims at providing the light-emitting device which is excellent in light reflectivity while having high heat dissipation.

上記目的を達成するために請求項１の発明は、ＬＥＤチップと、該ＬＥＤチップを収納するための凹部が形成された実装部材とを備え、前記凹部の底面部は、前記ＬＥＤチップの１対の電極に電気的に接続される１対の電極板と、これら電極板の間に挟まれてこれら電極板を電気的に絶縁する第１の絶縁部とを有し、前記凹部の側壁部は、前記ＬＥＤチップから出射された光を反射する反射部を有する発光装置において、前記凹部の側壁部は、前記電極板と前記反射部を電気的に絶縁するためにこれら電極板と反射部の間に形成された第２の絶縁部を備え、前記反射部を形成する前記凹部の側壁部の少なくとも内壁面が、金属により形成され、前記ＬＥＤチップを封止するための封止樹脂部と、前記ＬＥＤチップ上に設けられた半球形状の光取出し増大部と、前記凹部を覆うように前記凹部の側壁部に取り付けられた波長変換部材と、を備え、前記光取出し増大部は、空気層に比較して前記ＬＥＤチップの光出射面の材料に近い屈折率を有すると共に前記ＬＥＤチップの光出射面を疑似的に非平面化し、前記波長変換部材は、前記ＬＥＤチップから出射された光を吸収して、その波長を変換し、前記封止樹脂部は、前記光取出し増大部を前記ＬＥＤチップに固着し、前記封止樹脂部が、前記第２の絶縁部が形成され前記反射部が形成されていない状態で、前記第２の絶縁部の高さと同じ高さまで液体状の透光性樹脂を前記凹部に充填し、該透光性樹脂を硬化させて形成されていることを特徴とする。 In order to achieve the above object, the invention of claim 1 includes an LED chip and a mounting member in which a recess for receiving the LED chip is formed, and the bottom surface of the recess is a pair of the LED chip. A pair of electrode plates that are electrically connected to the electrodes, and a first insulating portion that is sandwiched between the electrode plates to electrically insulate the electrode plates, In the light emitting device having a reflection part that reflects the light emitted from the LED chip, the side wall part of the recess is formed between the electrode plate and the reflection part in order to electrically insulate the electrode plate and the reflection part. A sealing resin portion for sealing the LED chip, wherein at least an inner wall surface of the side wall portion of the recess that includes the second insulating portion is formed of metal, and the LED chip Hemispherical light provided above And a wavelength conversion member attached to a side wall portion of the recess so as to cover the recess, and the light extraction increase portion is a material of the light emitting surface of the LED chip as compared with an air layer. The light emitting surface of the LED chip is made pseudo-planar, the wavelength conversion member absorbs the light emitted from the LED chip, converts the wavelength, and the sealing The resin portion fixes the light extraction increasing portion to the LED chip, and the sealing resin portion is the second insulating portion in a state where the second insulating portion is formed and the reflecting portion is not formed. It is characterized in that it is formed by filling the concave portion with a liquid translucent resin up to the same height as the height and curing the translucent resin .

請求項２の発明は、請求項１に記載の発光装置において、前記電極板の側面が、前記第２の絶縁部により覆われていることを特徴とする。 According to a second aspect of the present invention, in the light emitting device according to the first aspect, a side surface of the electrode plate is covered with the second insulating portion .

請求項３の発明は、請求項１に記載の発光装置において、前記電極板が、前記凹部の側壁部より外側に張り出していることを特徴とする。 According to a third aspect of the present invention, in the light emitting device according to the first aspect, the electrode plate projects outward from the side wall of the recess .

請求項４の発明は、請求項１乃至請求項３のいずれかに記載の発光装置において、前記第１の絶縁部は、発光装置の底面側に突出形成された第１の突起部を有することを特徴とする。 According to a fourth aspect of the present invention, in the light emitting device according to any one of the first to third aspects, the first insulating portion has a first protrusion that is formed to protrude from the bottom surface side of the light emitting device. It is characterized by.

請求項５の発明は、請求項４に記載の発光装置において、発光装置の底面側に突出形成された１乃至複数の第２の突起部を更に有し、前記第１の突起部と第２の突起部の高さが同じであることを特徴とする。 According to a fifth aspect of the present invention, in the light emitting device according to the fourth aspect of the present invention, the light emitting device further includes one or a plurality of second projecting portions protruding from the bottom surface side of the light emitting device. The protrusions have the same height .

請求項１に記載の発明によれば、電極板と反射部の間に形成された第２の絶縁部を備え、該第２の絶縁部により電極板と反射部が電気的に絶縁されているので、反射部に絶縁部を設ける必要がなく、反射部の内壁面の全域を金属で形成することが可能となる。このため、発光装置の光取出し率を向上させることができる。また、ＬＥＤチップを封止するための封止樹脂部を備え、該封止樹脂部が、反射部が形成されていない状態で、第２の絶縁部の高さと略同じ高さまで液体状の透光性樹脂を凹部に充填して形成されているので、凹部に液体状の透光性樹脂を充填し過ぎた場合であっても透明性樹脂が第２の絶縁部の高さでこぼれ出る。このため、封止樹脂の厚さを略一定にすることができ、装置毎の光取出し率のバラツキを抑えることができる。 According to the first aspect of the present invention, the second insulating portion formed between the electrode plate and the reflecting portion is provided, and the electrode plate and the reflecting portion are electrically insulated by the second insulating portion. Therefore, it is not necessary to provide an insulating part in the reflecting part, and the entire inner wall surface of the reflecting part can be formed of metal. For this reason, the light extraction rate of the light emitting device can be improved. In addition, a sealing resin portion for sealing the LED chip is provided, and the sealing resin portion is liquid-like transparent up to a height substantially equal to the height of the second insulating portion in a state where the reflection portion is not formed. Since the concave portion is filled with the light-sensitive resin, the transparent resin spills out at the height of the second insulating portion even when the liquid-like transparent resin is excessively filled in the concave portion. For this reason, the thickness of sealing resin can be made substantially constant, and the variation in the light extraction rate for every apparatus can be suppressed.

請求項２に記載の発明によれば、電極板の側面が前記第２の絶縁部により覆われているので、発光装置を取り扱うユーザの感電を防止することができる。 According to the second aspect of the invention, since the side surface of the electrode plate is covered with the second insulating portion, it is possible to prevent an electric shock of a user who handles the light emitting device.

請求項３に記載の発明によれば、電極板が凹部の側壁部より外側に張り出しているので、発光装置を配線基板に実装する際、半田の接合状態を目視にて容易に確認することができ、装置の信頼性を向上させることができる。 According to the invention described in claim 3, since the electrode plate projects outward from the side wall portion of the recess, it is possible to easily confirm the solder joint state visually when mounting the light emitting device on the wiring board. And the reliability of the apparatus can be improved.

請求項４に記載の発明によれば、第１の絶縁部が発光装置の底面側に突出形成された第１の突起部を有するので、発光装置を配線基板に実装する際、この第１の突起部で半田による電極板の間の短絡を防止することができ、装置の信頼性を向上させることができる。 According to the invention described in claim 4, since the first insulating portion has the first protrusion formed to protrude on the bottom surface side of the light emitting device , the first insulating portion is mounted when the light emitting device is mounted on the wiring board. It is possible to prevent a short circuit between the electrode plates due to the solder at the protruding portion, and to improve the reliability of the apparatus.

請求項５に記載の発明によれば、発光装置の底面側に、第１の突起部の高さと略同じ高さを有する第２の突起部を有するので、発光装置を配線基板に実装する際、これら第１の突起部と第２の突起部で、発光装置を配線基板に対して略水平に実装させることができ、装置毎の光学特性のばらつきや、放熱性のばらつきを抑制することができる。 According to the fifth aspect of the invention, since the second protrusion having the same height as the first protrusion is provided on the bottom surface side of the light emitting device, the light emitting device is mounted on the wiring board. The first protrusion and the second protrusion allow the light emitting device to be mounted substantially horizontally with respect to the wiring board, and suppress variations in optical characteristics and heat dissipation from device to device. it can.

以下、本発明の第１の実施形態に係る発光装置について図１（ａ）（ｂ）を参照して説明する。発光装置１は、例えば、照明用途に用いられる装置であり、ＬＥＤチップ２と、該ＬＥＤチップ２を収納するための凹部４が形成された実装部材３とを備えている。凹部４の底面部５は、ＬＥＤチップ２の１対の電極（図示せず）に電気的に接続される１対の電極板５１と、これら電極板５１の間に挟まれてこれら電極板５１を電気的に絶縁する絶縁部５２とを有している。凹部４の側壁部６は、高反射性の微粒子を含む絶縁材料により形成されており、本実施形態では、側壁部６の内壁面６ａ付近が、ＬＥＤチップ２から出射された光を反射する反射部として機能する。   Hereinafter, a light-emitting device according to a first embodiment of the present invention will be described with reference to FIGS. The light emitting device 1 is, for example, a device used for lighting purposes, and includes an LED chip 2 and a mounting member 3 in which a recess 4 for housing the LED chip 2 is formed. The bottom surface portion 5 of the recess 4 is sandwiched between a pair of electrode plates 51 electrically connected to a pair of electrodes (not shown) of the LED chip 2 and these electrode plates 51. And an insulating portion 52 that electrically insulates. The side wall 6 of the recess 4 is formed of an insulating material containing highly reflective fine particles. In this embodiment, the vicinity of the inner wall 6a of the side wall 6 reflects the light emitted from the LED chip 2. It functions as a part.

ＬＥＤチップ２としては、例えば、サファイア等の結晶基板上にＧａＮ系化合物半導体を形成したチップを用いることができる。電極板５１には、例えば、銅やアルミニウムなどを用いることができ、間隔を開けて並べた２枚の電極板５１を絶縁部５２となる樹脂で固めて凹部４の底面部５が形成される。なお、発光装置１のサイズは特に限定されるものではないが、例えば、縦３．５ｍｍ、横７ｍｍ、高さ１．８ｍｍの電極板５１を０．２ｍｍの間隔を開けて樹脂で固め、深さ２ｍｍの凹部４を形成して縦７ｍｍ、横７ｍｍ、高さ２ｍｍの外形を有する発光装置１を形成する。これら電極板５１は、各々ＬＥＤチップのｐ側電極、ｎ側電極に電気的に接続される。なお、本実施形態においては、凹部４の底面部５に単結晶Ｓｉ平板からなるサブマウント２１を設置し、その上にＬＥＤチップ２を実装した。サブマウント２１は、実装部材３上にＡｇペースト等を用いて固定される。サブマウント２１のサイズも特に限定されるものではないが、例えば、縦１．５ｍｍ、横２ｍｍ、厚み０．５ｍｍ程度の平板を使用することができる。この場合、固化後のＡｇペースト層の厚みは、約０．１ｍｍとなる。   As the LED chip 2, for example, a chip in which a GaN-based compound semiconductor is formed on a crystal substrate such as sapphire can be used. For example, copper or aluminum can be used for the electrode plate 51, and the bottom surface portion 5 of the recess 4 is formed by fixing two electrode plates 51 arranged at intervals with a resin serving as the insulating portion 52. . The size of the light-emitting device 1 is not particularly limited. For example, the electrode plate 51 having a length of 3.5 mm, a width of 7 mm, and a height of 1.8 mm is solidified with a resin at intervals of 0.2 mm, and the depth is increased. A light emitting device 1 having an outer shape of 7 mm in length, 7 mm in width and 2 mm in height is formed by forming a recess 4 having a thickness of 2 mm. These electrode plates 51 are electrically connected to the p-side electrode and the n-side electrode of the LED chip, respectively. In the present embodiment, the submount 21 made of a single crystal Si flat plate is installed on the bottom surface portion 5 of the recess 4, and the LED chip 2 is mounted thereon. The submount 21 is fixed on the mounting member 3 using Ag paste or the like. The size of the submount 21 is not particularly limited. For example, a flat plate having a length of about 1.5 mm, a width of 2 mm, and a thickness of about 0.5 mm can be used. In this case, the thickness of the Ag paste layer after solidification is about 0.1 mm.

サブマウント２１には、Ａｕ蒸着等により１対の配線パターンが形成されている。これら配線パターンは、サブマウント２１の端部近傍においてワイヤボンディング用のランドを有している。電極板５１とサブマウントの配線パターンは、Ａｕワイヤー２２等を用いて電気的に接続される。また、配線パターンは、サブマウント２１の中央付近においてバンプ接続のためのランドを有している。ＬＥＤチップ２のｐ電極及びｎ各電極は、Ａｕバンプ２３等を介してサブマウント２１の配線パターンのランドに接合され、電気的に接続される。   A pair of wiring patterns is formed on the submount 21 by Au deposition or the like. These wiring patterns have lands for wire bonding near the end of the submount 21. The wiring pattern of the electrode plate 51 and the submount is electrically connected using the Au wire 22 or the like. The wiring pattern has a land for bump connection near the center of the submount 21. The p electrode and the n electrode of the LED chip 2 are joined and electrically connected to the land of the wiring pattern of the submount 21 via the Au bump 23 and the like.

上述したように凹部４の側壁部６は、高反射性の微粒子を含む絶縁材料により形成されている。このような微粒子として、例えば、酸化チタン（ＴｉＯ２）の微粒子を用いることでき、酸化チタンの微粒子を透光性のシリコーン樹脂等に分散することにより側壁部６を形成する。酸化チタンは屈折率が約２．５と高く、ＬＥＤチップ２の発光波長に応じてその粒径を調整することにより、入射してきた光の大部分を反射することが可能となる。例えば、ピーク波長約４６０ｎｍの青色ＬＥＤを用いた場合、平均粒子径約０．２μｍの酸化チタンを用いることが好ましい。なお、実際に、平均粒子径約０．２μｍの酸化チタンを透光性のシリコーン樹脂に分散して板材に成型し、ピーク波長約４６０ｎｍの青色ＬＥＤを用いて反射率を測定したところ、銀板の反射率と同程度となる約９６％の高反射率が得られた。 As described above, the side wall 6 of the recess 4 is formed of an insulating material containing highly reflective fine particles. As such fine particles, for example, fine particles of titanium oxide (TiO 2 ) can be used, and the sidewall portions 6 are formed by dispersing the fine particles of titanium oxide in a translucent silicone resin or the like. Titanium oxide has a high refractive index of about 2.5. By adjusting the particle size according to the emission wavelength of the LED chip 2, most of the incident light can be reflected. For example, when a blue LED having a peak wavelength of about 460 nm is used, it is preferable to use titanium oxide having an average particle diameter of about 0.2 μm. Actually, when titanium oxide having an average particle diameter of about 0.2 μm was dispersed in a translucent silicone resin and molded into a plate material, the reflectance was measured using a blue LED having a peak wavelength of about 460 nm. A high reflectivity of about 96%, which is comparable to the reflectivity, was obtained.

このように本実施形態の発光装置１によれば、反射部が、高反射性の微粒子を含む絶縁材料により形成されており、反射部と電極板５１が絶縁されているので、反射部を、凹部４の側壁部６の全域に亘って形成することが可能なる。このため、発光装置１の光取出し率を向上させることができる。   As described above, according to the light emitting device 1 of the present embodiment, the reflecting portion is formed of an insulating material containing highly reflective fine particles, and the reflecting portion and the electrode plate 51 are insulated. It can be formed over the entire side wall 6 of the recess 4. For this reason, the light extraction rate of the light emitting device 1 can be improved.

また、図１（ａ）に示されるように、発光装置１は、電極板５１の側面５ａが、側壁部（第２の絶縁部）６により覆われている。このように本実施形態の発光装置１によれば、電極板５１の側面５ａが側壁部（第２の絶縁部）６により覆われてので、発光装置１を取り扱うユーザの感電を防止することができる。   Further, as shown in FIG. 1A, in the light emitting device 1, the side surface 5 a of the electrode plate 51 is covered with a side wall portion (second insulating portion) 6. Thus, according to the light emitting device 1 of the present embodiment, since the side surface 5a of the electrode plate 51 is covered with the side wall portion (second insulating portion) 6, it is possible to prevent an electric shock of a user who handles the light emitting device 1. it can.

なお、上記においては、サブマウント２１を介してＬＥＤチップ２を電極板５１に実装した場合について説明したが、図２に示されるように、ＬＥＤチップ２を直接、電極板５１に実装するようにしても発光装置１の光取出し率を向上させる効果を損なうものではない。しかしながら、ＬＥＤチップ２は、電極板５１より一般的に平坦性に勝るサブマウント２１に実装する方が容易なため、サブマウント２１を用いることにより装置の量産性を向上させることができる。また、ＬＥＤチップ２と電極板５１の中間の熱膨張率を有する材料を用いてサブマウント２１を形成することにより、ＬＥＤチップ２と電極板５１の熱膨張率の差に起因する応力を緩和することができる。このため、周囲温度の変化による部材の膨張収縮によりＬＥＤチップ２が実装部材３から剥離することを防ぐことができ、発光装置１の信頼性を向上させることができる。なお、サブマウント２１は、上記構成に限られるものではなく、サブマウント２１に関する効果は、特に断りがない限り他の実施形態についても同様である。   In the above description, the LED chip 2 is mounted on the electrode plate 51 via the submount 21. However, as shown in FIG. 2, the LED chip 2 is mounted directly on the electrode plate 51. However, the effect of improving the light extraction rate of the light emitting device 1 is not impaired. However, since it is easier to mount the LED chip 2 on the submount 21 that is generally superior in flatness than the electrode plate 51, the use of the submount 21 can improve the mass productivity of the device. Further, by forming the submount 21 using a material having an intermediate thermal expansion coefficient between the LED chip 2 and the electrode plate 51, stress caused by the difference in the thermal expansion coefficient between the LED chip 2 and the electrode plate 51 is relieved. be able to. For this reason, it is possible to prevent the LED chip 2 from being detached from the mounting member 3 due to expansion and contraction of the member due to a change in ambient temperature, and it is possible to improve the reliability of the light emitting device 1. The submount 21 is not limited to the above configuration, and the effects related to the submount 21 are the same in the other embodiments unless otherwise specified.

次に、本発明の第２の実施形態に係る発光装置について図３（ａ）（ｂ）を参照して説明する。本実施形態の発光装置１は、凹部４の側壁部６が、電極板５１と反射部６１の間に形成された第２の絶縁部６２を備える点で第１の実施形態と異なる。電極板５１と反射部６１は、この第２の絶縁部６２によって電気的に絶縁される。なお、以下の実施形態においては、１対の電極板５１の間に形成された絶縁部５２を第１の絶縁部という。   Next, a light emitting device according to a second embodiment of the present invention will be described with reference to FIGS. The light emitting device 1 of this embodiment is different from that of the first embodiment in that the side wall portion 6 of the recess 4 includes a second insulating portion 62 formed between the electrode plate 51 and the reflecting portion 61. The electrode plate 51 and the reflecting part 61 are electrically insulated by the second insulating part 62. In the following embodiments, the insulating part 52 formed between the pair of electrode plates 51 is referred to as a first insulating part.

第２の絶縁部６２は、樹脂など絶縁性を有する材料により形成される。なお、第２の絶縁部６２は、上述した高反射性の微粒子を含む絶縁材料により形成される必要はないが、このような絶縁材料を用いれば、装置の光取出し率を更に向上させることができる。また、反射率の高い液晶ポリマー等を第２の絶縁部６２に用いることもできる。本実施形態の第１の絶縁部５２と第２の絶縁部６２は、同一材料を用いて電極板５１と一体成型されている。第２の絶縁部６２は、凹部４の底面部５からの高さが、ＬＥＤチップ２の光出射面と略同じ高さ（例えば、０．７ｍｍ）になるように形成されている。   The second insulating part 62 is formed of an insulating material such as resin. Note that the second insulating portion 62 does not need to be formed of the above-described insulating material containing highly reflective fine particles, but if such an insulating material is used, the light extraction rate of the device can be further improved. it can. Further, a liquid crystal polymer having a high reflectance can be used for the second insulating portion 62. The first insulating portion 52 and the second insulating portion 62 of the present embodiment are integrally formed with the electrode plate 51 using the same material. The second insulating portion 62 is formed so that the height from the bottom surface portion 5 of the recess 4 is substantially the same height (for example, 0.7 mm) as the light emitting surface of the LED chip 2.

反射部６１は、アルミニウム、銀、又は白金等、反射性に優れる金属により形成されており、電極板５１と接しないように第２の絶縁部６２の上に取り付けられている。なお、反射部６１は、凹部４の側壁部６の少なくとも内壁面６ａに形成されていればよく、例えば、スパッター法により金属膜を凹部４の内壁面６ａに形成するようにしてもよい。   The reflecting portion 61 is made of a metal having excellent reflectivity, such as aluminum, silver, or platinum, and is attached on the second insulating portion 62 so as not to contact the electrode plate 51. Note that the reflecting portion 61 is only required to be formed on at least the inner wall surface 6a of the side wall portion 6 of the recess 4. For example, a metal film may be formed on the inner wall surface 6a of the recess 4 by a sputtering method.

また、本実施形態の発光装置１は、ＬＥＤチップ２を封止するための封止樹脂部７を更に備える。このような封止樹脂部７は、ＬＥＤチップ２の実装後、第２の絶縁部６２が形成され反射部６１が形成されていない状態で、第２の絶縁部６２の高さと略同じ高さまで液体状の透光性樹脂を凹部４に充填し、該透光性樹脂を硬化させることにより形成される。   In addition, the light emitting device 1 according to the present embodiment further includes a sealing resin portion 7 for sealing the LED chip 2. Such a sealing resin portion 7 has a height approximately equal to the height of the second insulating portion 62 in a state where the second insulating portion 62 is formed and the reflecting portion 61 is not formed after the LED chip 2 is mounted. It is formed by filling the concave portion 4 with a liquid translucent resin and curing the translucent resin.

その他、発光装置１はＬＥＤチップ２の上に略半球形状の光取出し増大部１１を有している。光取出し増大部１１は、例えば、シリコーン樹脂により形成される。光取出し増大部１１は、空気層に比較してＬＥＤチップ２の光出射面の材料に近い屈折率を持ち、本来は平面であるＬＥＤチップ２の光出射面を擬似的に非平面化することにより、ＬＥＤチップ２からの光取り出し率を増加させるための部材である。このような構成の発光装置１では、ＬＥＤチップ２から出射される光を光取出し増大部１１を介して効率よくＬＥＤチップ２の外部へ取り出すことができる。なお、本実施形態において、上述した封止樹脂部７は、光取出し増大部１１をＬＥＤチップ２に固着する役目も果たす。   In addition, the light emitting device 1 has a substantially hemispherical light extraction increasing portion 11 on the LED chip 2. The light extraction increasing portion 11 is formed of, for example, a silicone resin. The light extraction increasing portion 11 has a refractive index close to that of the material of the light emitting surface of the LED chip 2 as compared with the air layer, and artificially flattens the light emitting surface of the LED chip 2 which is originally a flat surface. This is a member for increasing the light extraction rate from the LED chip 2. In the light emitting device 1 having such a configuration, light emitted from the LED chip 2 can be efficiently extracted to the outside of the LED chip 2 through the light extraction increasing unit 11. In the present embodiment, the sealing resin portion 7 described above also serves to fix the light extraction increasing portion 11 to the LED chip 2.

また、図３（ａ）に示されるように、発光装置１は、ＬＥＤチップ２から出射された光を吸収して、その波長を変換する波長変換部材１２を備えている。なお、図３（ｂ）においては、波長変換部材１２を省略して記載している。波長変換部材１２は、例えば、青色ＬＥＤの発光を吸収して黄色系の発光に変換する蛍光体を樹脂に分散し、該樹脂をシート状に成型することにより形成される。波長変換部材１２は、凹部４を覆うように凹部４の側壁部６に取り付けられる。このような構成の発光装置１では、ＬＥＤチップ２から出射される青色光の一部が波長変換部材１２により黄色光に変換され、変換されずに装置から照射される青色光と混合されることにより白色光を得ることが可能である。   As shown in FIG. 3A, the light emitting device 1 includes a wavelength conversion member 12 that absorbs light emitted from the LED chip 2 and converts its wavelength. In FIG. 3B, the wavelength conversion member 12 is omitted. The wavelength conversion member 12 is formed, for example, by dispersing in a resin a phosphor that absorbs light emitted from a blue LED and converts it into yellow light, and molds the resin into a sheet. The wavelength conversion member 12 is attached to the side wall portion 6 of the recess 4 so as to cover the recess 4. In the light emitting device 1 having such a configuration, part of the blue light emitted from the LED chip 2 is converted into yellow light by the wavelength conversion member 12 and mixed with the blue light emitted from the device without being converted. Thus, white light can be obtained.

このように、本実施形態の発光装置１によれば、電極板５１と反射部６１の間に形成された第２の絶縁部６２を備え、該第２の絶縁部６２により電極板５１と反射部６１が電気的に絶縁されているので、反射部６１に絶縁部を設ける必要がなく、反射部６１の内壁面の全域を金属で形成することが可能となる。このため、発光装置１の光取出し率を向上させることができる。   As described above, according to the light emitting device 1 of the present embodiment, the second insulating portion 62 formed between the electrode plate 51 and the reflecting portion 61 is provided, and the electrode plate 51 and the reflecting portion are reflected by the second insulating portion 62. Since the part 61 is electrically insulated, it is not necessary to provide an insulating part in the reflecting part 61, and the entire inner wall surface of the reflecting part 61 can be formed of metal. For this reason, the light extraction rate of the light emitting device 1 can be improved.

また、本実施形態の発光装置１によれば、ＬＥＤチップ２を封止するための封止樹脂部７を備え、該封止樹脂部７が、反射部６１が形成されていない状態で、第２の絶縁部６２の高さと略同じ高さまで液体状の透光性樹脂を凹部４に充填して形成されているので、凹部４に液体状の透光性樹脂を充填し過ぎた場合であっても透明性樹脂が第２の絶縁部６２の高さでこぼれ出る。このため、封止樹脂部７の厚さを略一定にすることができ、装置毎の光取出し率のバラツキを抑えることができる。   In addition, according to the light emitting device 1 of the present embodiment, the sealing resin portion 7 for sealing the LED chip 2 is provided, and the sealing resin portion 7 is formed in a state where the reflecting portion 61 is not formed. 2 is formed by filling the concave portion 4 with a liquid translucent resin up to a height substantially equal to the height of the insulating portion 62 of FIG. However, the transparent resin spills out at the height of the second insulating portion 62. For this reason, the thickness of the sealing resin part 7 can be made substantially constant, and the variation in the light extraction rate for every apparatus can be suppressed.

なお、第２の絶縁部６２は、電極板５１と反射部６１とを絶縁するスペーサとしての機能が果たせればよいので、図４に示されるように、第２の絶縁部６２が凹部４の内壁面にほとんど現れていなくてもよい。図４に示される実装部材３は、例えば、２枚の電極板５１を絶縁部５２となる樹脂で固めて凹部４の底面部５を形成し、接着剤等を用いて凹部４の底面部５に第２の絶縁部６２を固定し、更に第２の絶縁部６２の上に反射部６１を固定することにより形成される。   Note that the second insulating portion 62 only needs to function as a spacer that insulates the electrode plate 51 and the reflecting portion 61 from each other. Therefore, as shown in FIG. Almost no need to appear on the inner wall surface. In the mounting member 3 shown in FIG. 4, for example, two electrode plates 51 are solidified with a resin to be an insulating portion 52 to form the bottom surface portion 5 of the recess 4, and the bottom surface portion 5 of the recess 4 is formed using an adhesive or the like. The second insulating portion 62 is fixed to the second insulating portion 62, and the reflecting portion 61 is fixed on the second insulating portion 62.

次に、本発明の第３の実施形態に係る発光装置について図５を参照して説明する。本実施形態の発光装置１は、反射部が金属カップ部材６１ａにより形成されている点で第２の実施形態と異なる。   Next, a light-emitting device according to a third embodiment of the present invention will be described with reference to FIG. The light emitting device 1 of this embodiment is different from that of the second embodiment in that the reflection portion is formed by the metal cup member 61a.

金属カップ部材６１ａは、アルミニウム、銀、又は白金等、反射性に優れる金属を、底が抜けたカップ状に成型することにより作製される。凹部４の側壁部６は、第２の絶縁部６２で金属カップ部材６１ａを支持することにより形成されている。なお、第２の絶縁部６２は、第１の実施形態のような高反射性の微粒子を含む絶縁材料により形成される必要はないが、このような絶縁材料を用いれば、装置の光取出し率を更に向上させることができる。   The metal cup member 61a is produced by molding a metal having excellent reflectivity, such as aluminum, silver, or platinum, into a cup shape with a bottom removed. The side wall portion 6 of the recess 4 is formed by supporting the metal cup member 61 a with the second insulating portion 62. The second insulating portion 62 does not need to be formed of an insulating material containing highly reflective fine particles as in the first embodiment, but if such an insulating material is used, the light extraction rate of the apparatus Can be further improved.

このように本実施形態の発光装置１によれば、第２の実施形態と同様の効果が得られるほか、反射部が金属カップ部材６１ａにより形成され、該金属カップ部材６１ａが第２の絶縁部６２に支持されて凹部４の側壁部６が形成されているので、側壁部６の内壁面に金属蒸着して反射部を形成する場合に比べて製造コストを削減することができる。   As described above, according to the light emitting device 1 of the present embodiment, the same effects as those of the second embodiment can be obtained, and the reflection portion is formed by the metal cup member 61a, and the metal cup member 61a is the second insulating portion. Since the side wall part 6 of the recessed part 4 is supported by 62, manufacturing cost can be reduced compared with the case where a metal vapor deposition is formed on the inner wall surface of the side wall part 6 and a reflection part is formed.

次に、本発明の第４の実施形態に係る発光装置について図６（ａ）（ｂ）を参照して説明する。本実施形態の発光装置１は、金属カップ部材６１ａの下端６０が、ＬＥＤチップ２の光出射面の下方に向かって内側に延設されている点、及び、電極板５１が、凹部４の側壁部６より外側に張り出している点で第３の実施形態と異なる。   Next, a light emitting device according to a fourth embodiment of the present invention will be described with reference to FIGS. In the light emitting device 1 of the present embodiment, the lower end 60 of the metal cup member 61a extends inwardly below the light emitting surface of the LED chip 2, and the electrode plate 51 is a side wall of the recess 4. The third embodiment is different from the third embodiment in that it projects outward from the portion 6.

本実施形態の発光装置１は、電極板５１を配線基板に接合する際、外側に張り出している電極板５１に接合された半田が配線基板の配線パターン上に広がるため、発光装置１の上方から半田接合状態を確認し易くなる。このため、本実施形態の発光装置１によれば、半田接合状態を目視にて容易に確認することができ、装置の信頼性を向上させることができる。   In the light emitting device 1 of the present embodiment, when the electrode plate 51 is bonded to the wiring board, the solder bonded to the electrode plate 51 protruding outward spreads on the wiring pattern of the wiring board. It becomes easy to confirm the solder joint state. For this reason, according to the light emitting device 1 of the present embodiment, the solder joint state can be easily confirmed visually, and the reliability of the device can be improved.

また、本実施形態の発光装置１によれば、金属カップ部材６１ａの下端６０が、ＬＥＤチップ２の光出射面の下方に向かって内側に延設されているので、ＬＥＤチップ２から実装部材３に向かって出射された光を効率よく光取出し面側に反射することができ、さらに光取出し率を向上させることができる。   Further, according to the light emitting device 1 of the present embodiment, the lower end 60 of the metal cup member 61a extends inward toward the lower side of the light emitting surface of the LED chip 2, so that the mounting member 3 extends from the LED chip 2. The light emitted toward the light can be efficiently reflected to the light extraction surface side, and the light extraction rate can be further improved.

次に、本発明の第５の実施形態に係る発光装置について図７（ａ）（ｂ）、及び図８を参照して説明する。本実施形態の発光装置１は、発光装置１の底面側に突出形成された第１の突起部７１及び第２の突起部７２を有する点で他の実施形態と異なる。   Next, a light-emitting device according to a fifth embodiment of the present invention will be described with reference to FIGS. 7 (a) and 7 (b) and FIG. The light emitting device 1 according to the present embodiment is different from the other embodiments in that the light emitting device 1 includes a first protrusion 71 and a second protrusion 72 that are formed to protrude toward the bottom surface of the light emitting device 1.

図７（ａ）（ｂ）に示されるように、第１の突起部７１は、第１の絶縁部５２を、発光装置１の底面側に突出させることにより形成されている。また、第２の突起部７２は、第２の絶縁部６２を、発光装置１の底面側に突出させることにより形成されている。図７（ｂ）に示されるように、本実施形態においては、４つの第２の突起部７２を、発光装置１の底面の４隅に形成している。また、これら第１の突起部７１と４つの第２の突起部７２は、発光装置１の底面からの高さが略同じになるように形成されている。   As shown in FIGS. 7A and 7B, the first protrusion 71 is formed by causing the first insulating portion 52 to protrude toward the bottom surface side of the light emitting device 1. The second projecting portion 72 is formed by projecting the second insulating portion 62 to the bottom surface side of the light emitting device 1. As shown in FIG. 7B, in the present embodiment, four second protrusions 72 are formed at the four corners of the bottom surface of the light emitting device 1. The first protrusion 71 and the four second protrusions 72 are formed so that the height from the bottom surface of the light emitting device 1 is substantially the same.

図８は、発光装置１が配線基板８に実装された状態を示している。配線基板８は、金属板８１、絶縁層８２、及び配線パターン８３を有しており、上記第１の突起部７１と４つの第２の突起部７２に対応する位置には配線パターン８３が形成されていない。発光装置１を配線基板８に実装する際、第１の突起部７１は、半田層８４を介して１対の電極板５１に接続される１対の配線パターン８３の間に配置される。   FIG. 8 shows a state in which the light emitting device 1 is mounted on the wiring board 8. The wiring board 8 includes a metal plate 81, an insulating layer 82, and a wiring pattern 83. The wiring pattern 83 is formed at positions corresponding to the first protrusion 71 and the four second protrusions 72. It has not been. When the light emitting device 1 is mounted on the wiring board 8, the first protrusion 71 is disposed between a pair of wiring patterns 83 connected to the pair of electrode plates 51 via the solder layer 84.

このように本実施形態の発光装置１によれば、第１の絶縁部５２が発光装置１の底面側に突出形成された第１の突起部７１を有するので、発光装置１を配線基板８に実装する際、この第１の突起部７１で半田による電極板５１の間の短絡を防止することができ、装置の信頼性を向上させることができる。また本実施形態の発光装置１は、発光装置１の底面側に、第１の突起部７１の高さと略同じ高さを有する第２の突起部７２を有するので、発光装置１を配線基板８に実装する際、これら第１の突起部７１と第２の突起部７２で、発光装置１を配線基板８に対して略水平に実装させることができ、装置毎の光学特性のばらつきや、放熱性のばらつきを抑制することができる。   As described above, according to the light emitting device 1 of the present embodiment, the first insulating portion 52 has the first protrusion 71 that is formed to protrude from the bottom surface side of the light emitting device 1. When mounting, the first protrusion 71 can prevent a short circuit between the electrode plates 51 due to solder, and can improve the reliability of the apparatus. In addition, the light emitting device 1 of the present embodiment includes the second protrusion 72 having substantially the same height as the first protrusion 71 on the bottom surface side of the light emitting device 1. The first light emitting device 1 and the second light projecting portion 72 can be used to mount the light emitting device 1 substantially horizontally with respect to the wiring board 8 when mounted on the wiring board 8. Variation in sex can be suppressed.

なお、本実施形態においては、第１の突起部７１と第２の突起部７２の高さが略同じとなる場合について説明したが、例えば、図９に示されるように、第１の突起部７１が第２の突起部７２より高くなるように形成し、これを配線基板８に設けた貫通孔８５に挿入するようにしてもよい。このような構成にすることにより、発光装置１を配線基板８に実装する際の位置決めが容易になる。   In the present embodiment, the case where the heights of the first protrusion 71 and the second protrusion 72 are substantially the same has been described. For example, as shown in FIG. 9, the first protrusion 71 may be formed to be higher than the second protrusion 72 and may be inserted into the through hole 85 provided in the wiring board 8. Such a configuration facilitates positioning when the light emitting device 1 is mounted on the wiring board 8.

（ａ）は本発明の第１の実施形態に係る発光装置の断面図、（ｂ）は同上面図。(A) is sectional drawing of the light-emitting device which concerns on the 1st Embodiment of this invention, (b) is the top view. 同発光装置の変形例を示す断面図。Sectional drawing which shows the modification of the light-emitting device. （ａ）は本発明の第２の実施形態に係る発光装置の断面図、（ｂ）は同上面図。(A) is sectional drawing of the light-emitting device based on the 2nd Embodiment of this invention, (b) is the top view. 同発光装置の変形例を示す断面図。Sectional drawing which shows the modification of the light-emitting device. 本発明の第３の実施形態に係る発光装置の断面図。Sectional drawing of the light-emitting device which concerns on the 3rd Embodiment of this invention. （ａ）は本発明の第４の実施形態に係る発光装置の断面図、（ｂ）は同底面図。(A) is sectional drawing of the light-emitting device which concerns on the 4th Embodiment of this invention, (b) is the bottom view. （ａ）は本発明の第５の実施形態に係る発光装置の断面図、（ｂ）は同斜視図。(A) is sectional drawing of the light-emitting device which concerns on the 5th Embodiment of this invention, (b) is the perspective view. 同発光装置を配線基板に実装した状態を示す断面図、Sectional drawing which shows the state which mounted the light-emitting device in the wiring board, 変形例に係る発光装置を配線基板に実装した状態を示す断面図。Sectional drawing which shows the state which mounted the light-emitting device which concerns on a modification on the wiring board.

符号の説明Explanation of symbols

１ 発光装置
２ ＬＥＤチップ
３ 実装部材
４ 凹部
５ 凹部の底面部
６ 凹部の側壁部
５１ 電極板
５２ 第１の絶縁部（絶縁部）
６１ 反射部
６２ 第２の絶縁部 DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 LED chip 3 Mounting member 4 Recessed part 5 Bottom face part 6 of recessed part Side wall part 51 of recessed part Electrode plate 52 1st insulating part (insulating part)
61 Reflecting part 62 Second insulating part

Claims (5)

ＬＥＤチップと、該ＬＥＤチップを収納するための凹部が形成された実装部材とを備え、
前記凹部の底面部は、前記ＬＥＤチップの１対の電極に電気的に接続される１対の電極板と、これら電極板の間に挟まれてこれら電極板を電気的に絶縁する第１の絶縁部とを有し、
前記凹部の側壁部は、前記ＬＥＤチップから出射された光を反射する反射部を有する発光装置において、
前記凹部の側壁部は、前記電極板と前記反射部を電気的に絶縁するためにこれら電極板と反射部の間に形成された第２の絶縁部を備え、
前記反射部を形成する前記凹部の側壁部の少なくとも内壁面が、金属により形成され、
前記ＬＥＤチップを封止するための封止樹脂部と、
前記ＬＥＤチップ上に設けられた半球形状の光取出し増大部と、
前記凹部を覆うように前記凹部の側壁部に取り付けられた波長変換部材と、を備え、
前記光取出し増大部は、空気層に比較して前記ＬＥＤチップの光出射面の材料に近い屈折率を有すると共に前記ＬＥＤチップの光出射面を疑似的に非平面化し、
前記波長変換部材は、前記ＬＥＤチップから出射された光を吸収して、その波長を変換し、
前記封止樹脂部は、前記光取出し増大部を前記ＬＥＤチップに固着し、
前記封止樹脂部が、前記第２の絶縁部が形成され前記反射部が形成されていない状態で、前記第２の絶縁部の高さと同じ高さまで液体状の透光性樹脂を前記凹部に充填し、該透光性樹脂を硬化させて形成されていることを特徴とする発光装置。 An LED chip and a mounting member in which a recess for housing the LED chip is formed;
Bottom of the recess, wherein a pair of electrode plates electrically connected to the electrodes of a pair of LED chip, the first insulating portion which electrically insulates the electrodes plates sandwiched between the electrode plates And
In the light emitting device, the side wall portion of the concave portion has a reflecting portion that reflects the light emitted from the LED chip.
The side wall portion of the recess includes a second insulating portion formed between the electrode plate and the reflecting portion to electrically insulate the electrode plate and the reflecting portion,
At least the inner wall surface of the side wall portion of the recess that forms the reflective portion is formed of metal,
A sealing resin portion for sealing the LED chip;
A hemispherical light extraction increasing portion provided on the LED chip;
A wavelength conversion member attached to the side wall of the recess so as to cover the recess,
The light extraction increasing portion has a refractive index close to that of the material of the light emitting surface of the LED chip as compared to an air layer and pseudo-planarizes the light emitting surface of the LED chip,
The wavelength conversion member absorbs light emitted from the LED chip, converts the wavelength,
The sealing resin portion fixes the light extraction increasing portion to the LED chip,
In the sealing resin portion, in the state where the second insulating portion is formed and the reflecting portion is not formed, a liquid translucent resin is placed in the concave portion up to the same height as the second insulating portion. A light emitting device which is formed by filling and curing the translucent resin . 前記電極板の側面が、前記第２の絶縁部により覆われていることを特徴とする請求項１に記載の発光装置。 The light emitting device according to claim 1, wherein a side surface of the electrode plate is covered with the second insulating portion . 前記電極板が、前記凹部の側壁部より外側に張り出していることを特徴とする請求項１に記載の発光装置。 The light emitting device according to claim 1 , wherein the electrode plate projects outward from a side wall portion of the recess . 前記第１の絶縁部は、発光装置の底面側に突出形成された第１の突起部を有することを特徴とする請求項１乃至請求項３のいずれかに記載の発光装置。 4. The light emitting device according to claim 1, wherein the first insulating portion includes a first protrusion protruding from a bottom surface side of the light emitting device. 発光装置の底面側に突出形成された１乃至複数の第２の突起部を更に有し、
前記第１の突起部と第２の突起部の高さが同じであることを特徴とする請求項４に記載の発光装置。 It further has one or more second protrusions formed to protrude on the bottom surface side of the light emitting device,
The light emitting device according to claim 4, wherein the first protrusion and the second protrusion have the same height .
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