JP2009182091A - Light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly reliable light emitting device having excellent heat dissipation properties, in which one electrode and the other electrode of a light emitting element are solder-joined to package electrodes by using at least one metal member to allow a large current to pass through. <P>SOLUTION: A light emitting device includes: a package having at least two package electrodes; a light emitting diode; metal members that connect electrodes of the light emitting diode and the package electrodes; and a solder connecting between these constituents. The light emitting diode may be either an upper electrode type light emitting diode that has an n-type electrode and a p-type electrode on the upper surface thereof or an upper/lower electrode type light emitting diode. The electrodes of the light emitting diode are connected to the package electrodes by the metal members each interposed between one electrode and its corresponding package electrode. Between the package electrodes, the electrodes of the light emitting diode, and the metal members, the solder having a particle size of 3 to 20 μm is placed and melted by heating to join them to each other. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention is used for a light emitting element such as a light emitting diode (LED) and a laser diode (LD), and at least one metal member is used for one electrode and the other electrode of the light emitting element, and a package electrode and a solder are used. The present invention relates to a light-emitting device that can flow a large current by bonding and has excellent heat dissipation and high reliability.

  4 (a) and 4 (b) are diagrams for explaining a state in which the metal member and the electrode are connected by solder, FIG. 4 (b) is a plan view of a state in which solder is placed, and FIG. It is sectional drawing. FIGS. 5A and 5B are diagrams for explaining a state in which the electrode and the metal member are soldered. FIG. 5A is a plan view of the solder state when the metal member is attached, and FIG. It is sectional drawing of a). 4 (a) and 4 (b) and FIGS. 5 (b) and 5 (b), the solder 49 has a particle size of 20 μm to 35 μm. For example, the solder 49 is placed on the electrode 421 of the upper and lower electrode type light emitting diode 42. A fixed amount is placed.

  As shown in an exaggerated manner in FIG. 4 (b), the cross section of the solder 49 placed above is agglomerated with what has spread like a two-dot chain line when placed on the electrode 421. Slightly rise to the top. After the metal member 55 is placed thereon, the solder 49 is melted, for example, when passing through a reflow furnace, and the electrode 421 of the upper and lower electrode type light emitting diode 42 and the metal member 55 are joined.

In a conventional light emitting diode, a buffer layer, an n-type GaN layer, an active layer, a p-type semiconductor layer, and a p-type electrode are sequentially formed on a substrate, and an n-type electrode is provided on a part of the n-type GaN layer. Yes. A light emitting element similar to the upper and lower electrode type light emitting diode is described in, for example, Japanese Patent No. 3785820, Japanese Patent No. 3369089, or Japanese Patent No. 3490906.
Japanese Patent No. 3785820 Japanese Patent No. 3369089 Japanese Patent No. 3490906

  5A and 5B, the particle size of the solder 49 is as large as 20 μm to 35 μm. Therefore, when the solder 49 is placed on the electrode 421 on the upper and lower electrode type light emitting diodes 42 by the robot, FIG. Aggregate as shown. Then, when the metal member 55 is placed on the raised solder 49 with the metal member 55 being slightly displaced, the solder 49 aggregates as shown in FIGS. There was a possibility that a part of the raised portion was left and the molten solder flowed out of the metal member, causing a short circuit accident of the semiconductor layers in the stacking direction.

  In order to solve the above-described problems, an object of the present invention is to provide a light-emitting device that eliminates a short circuit of a semiconductor layer in a stacking direction due to protruding solder by devising the particle size of solder.

(First invention)
The light emitting device of the first invention comprises a package having at least two package electrodes, an upper and lower electrode type light emitting diode disposed on one of the package electrodes, an upper surface electrode of the upper and lower electrode type light emitting diode, and the other package electrode. Solder used for joining a metal member to be joined, joining one package electrode to the lower electrode of the upper and lower electrode type light emitting diode, joining upper surface electrode of the upper and lower electrode type light emitting diode to the metal member, and joining the metal member to the other package electrode And at least the upper surface electrode of the upper and lower electrode type light emitting diode and the metal member are bonded using a solder paste having solder particles having a particle diameter of 3 μm to 20 μm.

(Second invention)
A light-emitting device according to a second aspect of the present invention includes a package having at least two package electrodes, a top-surface electrode type light-emitting diode having an n-type electrode and a p-type electrode on an upper surface bonded on the package, and the top-surface electrode type light-emitting diode. an n-type electrode and one package electrode; two metal members connecting the p-type electrode and the other package electrode of the upper surface electrode type light emitting diode; and a junction between one package electrode and the first metal member; For joining the metal member of this type and the n-type electrode of the top electrode type light emitting diode, joining the other package electrode and the second metal member, and joining the second metal member and the p type electrode of the top electrode type light emitting diode. And at least the first metal member and the n-type electrode of the top electrode type light emitting diode, and the second metal member and the top electrode type light emitting device. The p-type electrode of the diode, wherein the particle size is bonded with a solder paste having solder particles 20μm from 3 [mu] m.

(Third invention)
The light emitting device of the third invention is composed of a ceramic substrate in which at least two package electrodes are formed as a conductive film in the package of the first invention or the second invention, or at least two metal substrates arranged in an insulating manner. It is characterized by.

(Fourth invention)
A light emitting device according to a fourth invention is characterized in that, in the package according to the first invention or the second invention, the package electrode is composed of a ceramic substrate formed as a conductive film and a metal substrate.

(Fifth invention)
The light emitting device of the fifth invention is characterized in that the metal member of the first to fourth inventions is made of a gold ribbon.

(Sixth invention)
The light emitting device of the sixth invention is characterized in that at least one of nickel, gold, and silver is plated on copper in which the metal member of the first to fourth inventions is formed into a ribbon shape.

(Seventh invention)
The light emitting device according to a seventh aspect of the present invention is the metal member according to the first to sixth aspects, wherein the thickness is 15 μm to 35 μm, preferably 20 μm to 30 μm, the width is 80 μm to 500 μm, preferably 100 μm to 300 μm. Features.

(Eighth invention)
The light-emitting device according to an eighth aspect is characterized in that the ceramic according to the first to seventh aspects is composed of a porous ceramic.

(9th invention)
A light-emitting device according to a ninth aspect is a gallium nitride-based light-emitting element in which the light-emitting diode according to the first to eighth aspects emits ultraviolet or blue light, and the phosphor-containing film body is a light-emitting element through an air layer. It contains at least one phosphor that converts ultraviolet or blue light emitted from the light into substantially white light.

  According to the present invention, the bonding of the solder in the bonding of the lower electrode of the light emitting element and the electrode of one package, the bonding of the upper partial electrode of the light emitting element and the metal member, and the bonding of the other of the metal member and the other of the package electrode. By setting the particle diameter to 3 μm to 20 μm, the solder spreads to a uniform thickness, and even when the metal member is displaced, the laminated portion of the light emitting element protrudes from the metal member. There is no short circuit.

  According to the present invention, the bonding between the lower electrode of the light emitting element and one of the package electrodes, the bonding of the upper partial electrode of the light emitting element and one of the metal members, and the bonding of the other of the metal members and the other of the package electrodes are good. In addition, since the area of the metal member is increased, the bonding strength can be improved, the heat dissipation can be improved, the light can be reflected well, and a large current can flow.

  According to the present invention, since bonding by wire bonding is not used for connection between the electrode of the light emitting element and the package electrode, a vibration is not applied to the bonding portion and / or the light emitting layer, and a light emitting device with few defective products is obtained. be able to.

  According to the present invention, the adoption of solder having a particle diameter of 3 μm to 20 μm and a metal member can eliminate not only a failure caused by solder, but also improve the bonding strength, and can also seal the light emitting element. No sealing material is required.

  According to the present invention, since the reflection frame is formed of porous ceramic, reflection and irregular reflection on the surface can be effectively used without forming a special reflection surface, and high reflectance can be achieved.

(First invention)
A light emitting device according to a first aspect of the present invention is a package having at least two package electrodes, an upper and lower electrode type light emitting diode, a metal member connecting the electrode of the upper and lower electrode type light emitting diode and the package electrode, and connecting between them It is made up of solder. The electrodes of the upper and lower electrode type light emitting diodes are connected by interposing a metal member between the one package electrode. Solder paste having solder particles having a particle size of 3 μm to 20 μm is placed between the package electrode, the upper electrode of the light emitting diode, and the metal member, and the solder paste is melted by heating and bonded to each other. Is done.

  Solder paste having a particle size of 20 μm to 32 μm, when heated, has a large agglomeration when melted, so that it rises, and if the metal member is slightly displaced, it is attracted to the metal member. Therefore, there is a risk of generating a defective rate of 2% to 3%. Solder paste having a particle size of 3 μm to 20 μm according to the present invention is small in agglomeration at the time of melting and is placed with a uniform thickness, so even when the arrangement of the metal members is slightly shifted, The solder hardly flows out and does not cause a short circuit accident in the stacking direction of the light emitting diodes. Further, the solder paste having a particle size of 3 μm to 20 μm is good in that even when about 10% of the solder with a large particle size is mixed, the solder does not flow out when the mixing rate is small. Bonding was possible.

(Second invention)
The light emitting device of the second invention is a package having at least two package electrodes, a top electrode type light emitting diode, two metal members connecting the electrode of the top electrode type light emitting diode and the package electrode, and a space between them. It is composed of solder to connect. The top electrode type light emitting diode has an n type electrode and a p type electrode on the top surface.

  In the top electrode type light emitting diode, a first metal member is interposed between the one package electrode and the n-type electrode, and a second metal member is interposed between the other package electrode and the p-type electrode, Between these, a solder paste having solder particles having a particle size of 3 μm to 20 μm is placed, and the solder paste is melted by heating to be bonded to each other.

  Solder paste having a particle size of 20 μm to 32 μm, when heated, has a large agglomeration when melted, so that it rises, and if the metal member is slightly displaced, it is attracted to the metal member. Therefore, there is a risk of generating a defective rate of 2% to 3%. Solder paste having a particle size of 3 μm to 20 μm according to the present invention is small in agglomeration at the time of melting and is placed with a uniform thickness, so even when the arrangement of the metal members is slightly shifted, The solder hardly flows out and does not cause a short circuit accident in the stacking direction of the light emitting diodes.

(Third invention)
The light emitting device of the third invention is constituted by two metal substrates from which the package of the first invention or the second invention is insulated, or a ceramic substrate in which at least two package electrodes are formed as a conductive film. For example, a reflective frame is bonded to the ceramic substrates and the metal substrates by a thermosetting resin adhesive or the like. The reflection frame can be bonded even if the ceramic substrate and the metal substrate are thinned. In particular, even if an insulating member or a space is provided between the metal substrates, since the reflection frame is bonded, the strength as a light emitting device can be obtained.

(Fourth invention)
The light emitting device of the fourth invention is different from the third invention in that the package of the first invention or the second invention is composed of a ceramic substrate and a metal substrate.

(Fifth invention)
In the light-emitting device of the fifth invention, the metal members of the first to fourth inventions are ribbon-like or strip-like, formed to be wide and thin, not only can flow a large current, but also have a large surface area. It has a high heat dissipation effect and can reflect light efficiently. The metal member is bonded to the electrode of the light emitting element by the solder having the particle diameter instead of pressing and bonding a plurality of conventional gold wires to the electrode, and has high bonding strength without giving vibration to the light emitting element. No need to fill with sealing material.

(Sixth invention)
In the light emitting device of the sixth invention, the metal member is ribbon-like copper, and at least one of nickel, gold, and silver is plated on the surface of the copper, and the light reflection efficiency, heat dissipation, and wettability with solder are obtained. Improvements can be achieved at the same time.

(Seventh invention)
The metal member in the light emitting device of the seventh invention has a thickness of 15 μm to 35 μm, preferably 20 μm to 30 μm, and a width of 80 μm to 500 μm, preferably 100 μm to 300 μm. By setting the metal member to be equal to or smaller than the electrode width of the upper and lower electrode type light emitting diodes, a large current can flow, and not only the heat dissipation is improved, but also the strength in the case of an assembly is improved. .

(Eighth invention)
In the light emitting device of the eighth invention, the ceramic is composed of porous ceramic. The porous ceramic is an alumina-based ceramic. For example, a porous ceramic having a pore diameter of 0.10 to 1.25 μm or a porosity of 10% or more is used.

(9th invention)
A light-emitting device according to a ninth aspect of the invention is a gallium nitride-based light-emitting element that emits ultraviolet or blue light using either the top electrode light-emitting element or the upper and lower electrode type light-emitting diode. In the phosphor-containing film body attached to the reflection frame, light emitted from the light emitting element is output as light of a desired color by the phosphor-containing film body. For example, when the light emitting element emits light having a wavelength of blue or ultraviolet light, the light emitting element absorbs the wavelength of blue or ultraviolet light and converts it into white light.

  FIGS. 1A to 1C are examples of the present invention, and FIG. 1A is a schematic cross-sectional view of a light emitting device using a top electrode type light emitting element for explaining a state in which the light emitting element is incorporated in a package. (B) is a plan view of the light-emitting device, and (C) is a cross-sectional view of the light-emitting element. 1A and 1B, a light-emitting device 10 including a top-surface light-emitting diode having an n-type electrode and a p-type electrode on an upper surface has a first conductive film 13 and a second conductive film 14 formed thereon. It comprises at least a ceramic substrate 11, a light emitting element 12, a reflection frame 17, and a phosphor-containing film body 18 provided on the reflection frame 17.

  The light emitting element 12 includes a first electrode 121 and a second electrode 122. The first electrode 121 is provided on the top of the light emitting element 12 as shown in the drawing so that light can be easily irradiated from the center. The first electrode 121 may be provided in an eye shape, for example. The second electrode 122 is led out from the lower part sandwiching the light emitting layer (not shown) and has a small area. The first electrode 121 is joined to the first conductive film 13 by the first metal member 15 by, for example, solder. The second electrode 122 is joined to the second conductive film 14 by the second metal member 16.

  The first metal member 15 and the second metal member 16 are made of, for example, a strip-shaped gold ribbon, or a ribbon-like metal member plated with gold and / or silver, for example, copper. Yes. The first metal member 15 and the second metal member 16 have low electrical resistance, can flow a large current, and are not only excellent in heat dissipation, but also can be easily changed in shape, Each electrode can be easily joined.

  On the ceramic substrate 11, the first conductive film 13, and the second conductive film 14, a reflection frame 17 is bonded by a thermosetting adhesive or the like. Further, the reflection frame 17 is provided with a phosphor-containing film body 18 on an upper portion thereof. The phosphor-containing film body 18 can convert the ultraviolet light emitted from the light emitting element 12 through the air layer into white light. Can be selected.

  The electrodes 121 and 122, the conductive films 13 and 14, and the metal members 15 and 16 of the light emitting element 12 in the light emitting device 10 are joined by solder. The joining of the respective parts is usually performed simultaneously by placing solder in a predetermined joining part and passing through a reflow furnace. Since the bonding of each part by the solder has high strength, it is not necessary to fill a sealing material for sealing them.

  The first conductive film 13, the second conductive film 14, the first metal member 15, and the second metal member 16 have a thickness that does not burn out even when a current of 1 A or more flows. In particular, the first metal member 15 and the second metal member 16 are not only a ribbon-like metal member having a strip shape, for example, but also have a low electric resistance and can flow a large current. Compared to wiring, it has a large area, so it can be installed easily and can be firmly joined.

  The first metal member 15 and the second metal member 16 have a thickness of 15 μm to 35 μm, preferably 20 μm to 30 μm, so that a large current can flow and the heat dissipation is improved. In addition, the strength of the assembly is improved. When the thickness of the first metal member 15 and the second metal member 16 is made thinner than 15 μm, the applicant of the present invention has a small amount of current to flow and a small heat dissipation effect. In consideration of the above, it has been found that even if it is thicker than 35 μm, the material is useless and meaningless.

  The first metal member 15 and the second metal member 16 are made of aluminum, copper, or an alloy thereof, and are plated with at least one of nickel, gold, and silver as necessary. In addition to improving wettability during bonding, the plating can not only efficiently irradiate light but also provide a highly reliable light emitting device. The gold and / or silver plating at the joint can not only improve the wettability of the solder, but can simultaneously achieve three things: an improvement in current conductivity and a light reflectivity. Further, the first metal member 15 and the second metal member 16 may be a laminated substrate of copper or aluminum, an alloy thereof and gold and / or silver.

  In FIG. 1C, the light emitting element 12 is bonded onto the substrate 11 with an adhesive 127. The light emitting element 12 includes an n-type semiconductor layer 125, an active layer 124, a p-type semiconductor layer 123, and an upper partial electrode 121 on a base material 126. A metal member 15 is bonded onto the upper partial electrode 121 through solder 19. The light emitting element 12 has a size of, for example, 1.0 mm × 1.0 mm, 0.7 mm × 0.7 mm, 0.5 mm × 0.5 mm, or 0.3 mm × 0.3 mm, and a thickness of 0.15 mm. It is.

  FIGS. 2 (a) and 2 (b) show a second embodiment of the present invention. FIG. 2 (a) is a front view for explaining a state where upper and lower electrode type light emitting diodes are mounted on a metal substrate. ). 2A and 2B, the light emitting device in the second embodiment includes one metal substrate 212 and the other metal substrate 214, and an insulating member 213 provided between the metal substrates 212 and 214. An upper / lower electrode type light emitting diode 211, a metal member 215 connecting the other metal substrate 214 and the upper partial electrode 222 of the upper / lower electrode type light emitting diode 211, and a reflector 216 mounted on the metal substrates 212, 214; At least.

  The reflector 216 is formed of a substantially cylindrical body having a reflective portion 261 that is inclined so as to spread toward the upper part. The surfaces of the metal substrates 212 and 214 are plated with gold and / or silver, for example. The metal substrates 212 and 214 and the reflector 216 can be arbitrarily deformed such as a circle, a square, a rectangle, and an ellipse.

  The reflector 216 can be filled or unfilled with a transparent sealing resin as required. In the case of filling, the transparent sealing resin can be an elastomer type composed of a one-component or two-component thermosetting silicone resin. The elastomer type resin preferably has a Shore A (rubber hardness) of 15 to 85, preferably 20 to 80.

  The reflector 216 can be made of alumina, a composite ceramic of alumina and glass, or a synthetic resin member. The reflector 216 made of the synthetic resin member needs to be plated with gold and / or silver on the reflecting surface. The reflector 216 is made of a member such as alumina or a composite ceramic of alumina and glass, and is attached to the metal substrates 212 and 214 with an epoxy resin, polyimide resin, glass, or brazing adhesive. It is joined.

  In FIG. 2B, the upper partial electrode 222 of the upper and lower electrode type light emitting diode 211 has an opening 223 in the shape of a letter, and efficiently irradiates light from this portion. The shape of the opening 223 can be variously modified, such as a letter shape, a square shape, and a U shape, in addition to the shape of a letter. Moreover, the metal member 215 can be made into two connection parts, for example. The two connecting portions are shaped to easily irradiate light emitted from the side portions of the upper and lower electrode type light emitting diodes 211 upward. The metal member 215 is bonded to the upper partial electrode 222 and the metal substrate 214 by eutectic solder having the particle size. In addition, although Example 1 demonstrated the ceramic substrate and Example 2 demonstrated the metal substrate as an example, it can also be set as the light-emitting device which consists of a board | substrate which combined the ceramic substrate and the metal substrate.

  FIGS. 3A and 3B are views for explaining the joining of the light emitting element and the metal member by solder which is an embodiment of the present invention. 3A and 3B, the solder 19 having a particle diameter of 3 μm to 20 μm is placed on the electrode 121 provided on the light emitting element 12 with the same uniform thickness. After the metal member 15 is placed on the solder 19, the solder is melted by heating, and the electrode 121 and the metal members 15 and 16 are joined to each other.

  The solder having a particle size of 3 μm to 20 μm has an appropriate particle size with respect to the size of the electrode 121 and the metal member 15, so that the aggregation at the time of melting is small, and the solder spreads with just the right thickness. Even if the arrangement of the metal member 15 with respect to the solder 19 is slightly shifted, excess solder does not flow out between them, and a short circuit accident does not occur.

  The light emitting element 12 is a blue light emitting diode or an ultraviolet light emitting diode. In the case of a blue light emitting diode, by using a fluorescent film containing a phosphor that absorbs blue and colors green and red, In total, white light is emitted. When the light emitting element 12 is an ultraviolet light emitting diode, the light emitting element 12 emits almost white using a fluorescent film containing a phosphor that develops blue, green and red colors by absorbing ultraviolet light, or absorbs ultraviolet light and emits blue light. Even when using a phosphor that develops a color and a phosphor that absorbs ultraviolet rays and blue and develops green and red, substantially white light can be emitted.

  The ceramic in the case where the reflection frame 17 is provided can be an alumina-based ceramic other than the one obtained by molding an insulating resin. As the alumina-based ceramic, one having a pore diameter of 0.10 μm to 1.25 μm or a porosity of 10% or more is used in the reflection frame 17, for example. The reflection frame 17 made of the porous ceramic does not need to form a reflection film, but can improve reflectance by irregular reflection on the inner surface.

  Next, an example of the solder according to the present invention will be described. The solder used in this example was a gold-22% tin paste having a particle size of 3 μm to 20 μm, and the eutectic conditions were 145 ° C. for 20 seconds and 290 ° C. for 15 seconds. When the solder is used, the result of bonding is that gold tin is placed flat with an appropriate hardness, liquefied appropriately by heating, and evenly melted only in the desired part. Further, the solder did not protrude into the adjacent conductive pattern, and there was no short-circuited solder.

  A conventional solder having a product name of gold-22% tin paste having a particle size of 20 to 32 μm was used at eutectic conditions of 145 ° C. for 20 seconds and 290 ° C. for 15 seconds. When the solder was used, the result of adhesion was that gold tin was rippled and centered in a chevron shape, liquefied by heating, and melted out of the desired area. The solder was short-circuited with the adjacent conductive pattern, and the ratio was 3%.

  A comparison was made between a light emitting element in which a gold wire of a conventional example was connected by ultrasonic waves and an example of the present invention in which solder and a metal member were joined. In the conventional example, two gold wires with a diameter of 30 μm are used. Due to ultrasonic vibration of a wire bonder in which the electrode of the light emitting element and the other of the metal substrate are connected by ultrasonic wire bonding, defective products with poor light emission are reduced. 10% occurred. Furthermore, when 350 mA was energized, burning due to an energization abnormality of about 4% occurred. In the examples of the present invention, no defective product was generated even when the current was from 350 mA to 500 mA.

  As mentioned above, although the Example of this invention was explained in full detail, this invention is not limited to the said Example. The present invention can be modified in various ways without departing from the scope of the claims. As the light-emitting element of the present invention, known or well-known elements other than the shapes described as examples can be used. As the material of the phosphor-containing film body, the reflection frame, the metal substrate, or the ceramic substrate of the present invention, known or well-known materials can be used. Although this embodiment has been described with respect to a light emitting diode, it goes without saying that it is used for a light emitting element such as a laser diode. Furthermore, as a result of verification, the present invention was almost the same as the example even when about 10% of the solder paste having the same particle size as the conventional one was mixed in the particle size of the solder paste in the example.

(A) to (c) are examples of the present invention, and (b) is a schematic cross-sectional view of a light emitting device using a top electrode type light emitting element for explaining a state in which the light emitting element is incorporated in a package. ) Is a plan view of the light-emitting device, and (C) is a cross-sectional view of the light-emitting element. Example 1 (A) and (B) are the second embodiment of the present invention, (B) is a front view for explaining a state in which the upper and lower electrode type light emitting diodes are mounted on the metal substrate, and (B) is a view of (B). It is a top view. (Example 2) (A) and (B) are diagrams for explaining joining of the light emitting element and the metal member by the solder of the present invention. (A) and (B) are diagrams for explaining a state in which a metal member and an electrode are connected by solder, (A) is a plan view of a state where solder is placed, and (B) is a sectional view of (A). It is. (A) and (B) are diagrams for explaining a state in which an electrode and a metal member are soldered. (A) is a plan view of a solder state when a metal member is attached. (B) is (A) FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Light-emitting device 11 ... Ceramic substrate 12 ... Light emitting element 121 ... 1st electrode 122 ... 2nd electrode 13 ... 1st electrically conductive film 14 ... 2nd Conductive film 15 ... first metal member 16 ... second metal member 17 ... reflective frame 18 ... phosphor-containing film body 19 ... solder

Claims (9)

A package having at least two package electrodes;
Upper and lower electrode type light emitting diodes disposed on one package electrode;
A metal member connecting the upper surface electrode of the upper and lower electrode type light emitting diode and the other package electrode;
Solder used for joining one package electrode and the lower electrode of the upper and lower electrode type light emitting diode, joining the upper surface electrode of the upper and lower electrode type light emitting diode and the metal member, and joining the metal member and the other package electrode;
The light emitting device is characterized in that at least the upper surface electrode of the upper and lower electrode type light emitting diode and the metal member are bonded using a solder paste having solder particles having a particle diameter of 3 μm to 20 μm. A package having at least two package electrodes;
A top-surface light emitting diode having an n-type electrode and a p-type electrode on an upper surface bonded onto the package;
Two metal members that connect the n-type electrode and one package electrode of the top electrode type light emitting diode to the p type electrode of the top electrode type light emitting diode and the other package electrode, respectively;
Bonding between one package electrode and the first metal member, bonding between the first metal member and the n-type electrode of the top electrode type light emitting diode, bonding between the other package electrode and the second metal member, Solder used for bonding the metal member and the p-type electrode of the top electrode type light emitting diode;
And at least the first metal member and the n-type electrode of the top electrode type light emitting diode, and the second metal member and the p type electrode of the top electrode type light emitting diode are solder particles having a particle size of 3 μm to 20 μm A light-emitting device which is bonded using a solder paste having the following.   The said package is comprised from the ceramic substrate in which the at least 2 package electrode is formed as a electrically conductive film, or the at least 2 metal substrate arrange | positioned insulatingly, The Claim 1 or Claim 2 characterized by the above-mentioned. The described light emitting device.   3. The light emitting device according to claim 1, wherein the package includes a ceramic substrate in which a package electrode is formed as a conductive film, and a metal substrate.   The light emitting device according to any one of claims 1 to 4, wherein the metal member is made of a gold ribbon.   5. The light emitting device according to claim 1, wherein the metal member is formed by plating at least one of nickel, gold, and silver on copper formed in a ribbon shape. 6. apparatus.   7. The metal member according to claim 1, wherein the metal member has a thickness of 15 μm to 35 μm, preferably 20 μm to 30 μm, and a width of 80 μm to 500 μm, preferably 100 μm to 300 μm. The light-emitting device described in 1.   The light emitting device according to any one of claims 1 to 7, wherein the ceramic is made of a porous ceramic.   The light emitting diode is a gallium nitride-based light emitting element that emits ultraviolet or blue light, and the phosphor-containing film body converts the ultraviolet or blue light emitted from the light emitting element through an air layer into almost white light. The light-emitting device according to claim 1, comprising at least one phosphor to be converted.

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