JP4977310B2 - ソリッドステート放射線イメージャの蓄積コンデンサアレイ - Google Patents

ソリッドステート放射線イメージャの蓄積コンデンサアレイ Download PDF

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Publication number
JP4977310B2
JP4977310B2 JP2004167141A JP2004167141A JP4977310B2 JP 4977310 B2 JP4977310 B2 JP 4977310B2 JP 2004167141 A JP2004167141 A JP 2004167141A JP 2004167141 A JP2004167141 A JP 2004167141A JP 4977310 B2 JP4977310 B2 JP 4977310B2
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Japan
Prior art keywords
imager
electrode
coupled
pixels
disposed
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004167141A
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English (en)
Japanese (ja)
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JP2004363614A5 (enExample
JP2004363614A (ja
Inventor
チー・アン・リー
ジョージ・エドワード・ポッシン
ダグラス・アルバグリー
ウィリアム・アンドリュー・ヘネシー
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General Electric Co
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General Electric Co
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Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2004363614A publication Critical patent/JP2004363614A/ja
Publication of JP2004363614A5 publication Critical patent/JP2004363614A5/ja
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Publication of JP4977310B2 publication Critical patent/JP4977310B2/ja
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Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2004167141A 2003-06-06 2004-06-04 ソリッドステート放射線イメージャの蓄積コンデンサアレイ Expired - Fee Related JP4977310B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/457,322 2003-06-06
US10/457,322 US20040246355A1 (en) 2003-06-06 2003-06-06 Storage capacitor array for a solid state radiation imager

Publications (3)

Publication Number Publication Date
JP2004363614A JP2004363614A (ja) 2004-12-24
JP2004363614A5 JP2004363614A5 (enExample) 2007-07-12
JP4977310B2 true JP4977310B2 (ja) 2012-07-18

Family

ID=33452164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004167141A Expired - Fee Related JP4977310B2 (ja) 2003-06-06 2004-06-04 ソリッドステート放射線イメージャの蓄積コンデンサアレイ

Country Status (5)

Country Link
US (1) US20040246355A1 (enExample)
JP (1) JP4977310B2 (enExample)
CN (1) CN100459135C (enExample)
DE (1) DE102004026949A1 (enExample)
FR (1) FR2855913B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2450075A (en) * 2007-03-08 2008-12-17 Selex Sensors & Airborne Sys Tracking device for guiding a flight vehicle towards a target
CN102142449A (zh) * 2011-01-18 2011-08-03 江苏康众数字医疗设备有限公司 非晶硅图像传感器
CN106303310A (zh) * 2016-08-26 2017-01-04 上海奕瑞光电子科技有限公司 一种像素阵列及降低图像串扰的读出方法
WO2018176490A1 (en) * 2017-04-01 2018-10-04 Huawei Technologies Co., Ltd. Cmos image sensor with xy address exposure control
US10607999B2 (en) * 2017-11-03 2020-03-31 Varian Semiconductor Equipment Associates, Inc. Techniques and structure for forming dynamic random access device
WO2021168732A1 (en) * 2020-02-27 2021-09-02 Shenzhen Genorivision Technology Co., Ltd. Radiation detectors with high pixel concentrations
CN113805221B (zh) * 2020-06-11 2024-09-27 睿生光电股份有限公司 辐射检测装置
JP2025513151A (ja) * 2022-04-28 2025-04-24 京東方科技集團股▲ふん▼有限公司 光電検出器及び電子デバイス

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487566A1 (fr) * 1980-07-25 1982-01-29 Thomson Csf Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice
JPS5963869A (ja) * 1982-10-04 1984-04-11 Fuji Xerox Co Ltd 原稿読取装置
JPS6353968A (ja) * 1986-08-22 1988-03-08 Nikon Corp イメ−ジセンサ
US5062690A (en) * 1989-06-30 1991-11-05 General Electric Company Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links
DE4118154A1 (de) * 1991-06-03 1992-12-10 Philips Patentverwaltung Anordnung mit einer sensormatrix und einer ruecksetzanordnung
GB9202693D0 (en) * 1992-02-08 1992-03-25 Philips Electronics Uk Ltd A method of manufacturing a large area active matrix array
GB9209734D0 (en) * 1992-05-06 1992-06-17 Philips Electronics Uk Ltd An image sensor
US5313319A (en) * 1992-06-17 1994-05-17 General Electric Company Active array static protection devices
US5610403A (en) * 1995-09-05 1997-03-11 General Electric Company Solid state radiation imager with gate electrode plane shield wires
US5648654A (en) * 1995-12-21 1997-07-15 General Electric Company Flat panel imaging device with patterned common electrode
US5981931A (en) * 1996-03-15 1999-11-09 Kabushiki Kaisha Toshiba Image pick-up device and radiation imaging apparatus using the device
JP3649907B2 (ja) * 1998-01-20 2005-05-18 シャープ株式会社 二次元画像検出器およびその製造方法
US6410921B1 (en) * 1998-01-30 2002-06-25 Konica Corporation X-ray image recording system and x-ray image recording method
JPH11331703A (ja) * 1998-03-20 1999-11-30 Toshiba Corp 撮像装置
JP4401488B2 (ja) * 1998-09-01 2010-01-20 キヤノン株式会社 光電変換装置
JP2000235075A (ja) * 1999-02-16 2000-08-29 Fuji Photo Film Co Ltd 放射線固体検出器の電荷読出方法および装置、並びに放射線固体検出器
JP3838806B2 (ja) * 1999-03-26 2006-10-25 株式会社東芝 信号増倍ｘ線撮像装置
US6747290B2 (en) * 2000-12-12 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Information device
TW458288U (en) * 2001-03-08 2001-10-01 Liau Guo Fu X-ray image sensor
US6777685B2 (en) * 2002-04-03 2004-08-17 General Electric Company Imaging array and methods for fabricating same

Also Published As

Publication number Publication date
US20040246355A1 (en) 2004-12-09
FR2855913A1 (fr) 2004-12-10
FR2855913B1 (fr) 2010-07-30
CN1574375A (zh) 2005-02-02
CN100459135C (zh) 2009-02-04
DE102004026949A1 (de) 2004-12-23
JP2004363614A (ja) 2004-12-24

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