CN100459135C - 用于固态辐射成像器的存储电容器阵列 - Google Patents
用于固态辐射成像器的存储电容器阵列 Download PDFInfo
- Publication number
- CN100459135C CN100459135C CNB2004100484805A CN200410048480A CN100459135C CN 100459135 C CN100459135 C CN 100459135C CN B2004100484805 A CNB2004100484805 A CN B2004100484805A CN 200410048480 A CN200410048480 A CN 200410048480A CN 100459135 C CN100459135 C CN 100459135C
- Authority
- CN
- China
- Prior art keywords
- electrode
- imager
- pixel
- capacitor
- imaging array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 47
- 230000005855 radiation Effects 0.000 title abstract description 10
- 239000007787 solid Substances 0.000 title abstract description 8
- 238000003384 imaging method Methods 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000001052 transient effect Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims 1
- 230000001965 increasing effect Effects 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/457322 | 2003-06-06 | ||
| US10/457,322 US20040246355A1 (en) | 2003-06-06 | 2003-06-06 | Storage capacitor array for a solid state radiation imager |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1574375A CN1574375A (zh) | 2005-02-02 |
| CN100459135C true CN100459135C (zh) | 2009-02-04 |
Family
ID=33452164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100484805A Expired - Fee Related CN100459135C (zh) | 2003-06-06 | 2004-06-07 | 用于固态辐射成像器的存储电容器阵列 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20040246355A1 (enExample) |
| JP (1) | JP4977310B2 (enExample) |
| CN (1) | CN100459135C (enExample) |
| DE (1) | DE102004026949A1 (enExample) |
| FR (1) | FR2855913B1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2450075A (en) * | 2007-03-08 | 2008-12-17 | Selex Sensors & Airborne Sys | Tracking device for guiding a flight vehicle towards a target |
| CN102142449A (zh) * | 2011-01-18 | 2011-08-03 | 江苏康众数字医疗设备有限公司 | 非晶硅图像传感器 |
| CN106303310A (zh) * | 2016-08-26 | 2017-01-04 | 上海奕瑞光电子科技有限公司 | 一种像素阵列及降低图像串扰的读出方法 |
| WO2018176490A1 (en) * | 2017-04-01 | 2018-10-04 | Huawei Technologies Co., Ltd. | Cmos image sensor with xy address exposure control |
| US10607999B2 (en) * | 2017-11-03 | 2020-03-31 | Varian Semiconductor Equipment Associates, Inc. | Techniques and structure for forming dynamic random access device |
| WO2021168732A1 (en) * | 2020-02-27 | 2021-09-02 | Shenzhen Genorivision Technology Co., Ltd. | Radiation detectors with high pixel concentrations |
| CN113805221B (zh) * | 2020-06-11 | 2024-09-27 | 睿生光电股份有限公司 | 辐射检测装置 |
| JP2025513151A (ja) * | 2022-04-28 | 2025-04-24 | 京東方科技集團股▲ふん▼有限公司 | 光電検出器及び電子デバイス |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5062690A (en) * | 1989-06-30 | 1991-11-05 | General Electric Company | Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links |
| US5349174A (en) * | 1992-05-06 | 1994-09-20 | U.S. Philips Corporation | Image sensor with transparent capacitive regions |
| US5648654A (en) * | 1995-12-21 | 1997-07-15 | General Electric Company | Flat panel imaging device with patterned common electrode |
| CN1224244A (zh) * | 1998-01-20 | 1999-07-28 | 夏普株式会社 | 二维图像检像器及其制造方法 |
| US5981931A (en) * | 1996-03-15 | 1999-11-09 | Kabushiki Kaisha Toshiba | Image pick-up device and radiation imaging apparatus using the device |
| JP2000235075A (ja) * | 1999-02-16 | 2000-08-29 | Fuji Photo Film Co Ltd | 放射線固体検出器の電荷読出方法および装置、並びに放射線固体検出器 |
| US6185274B1 (en) * | 1998-03-20 | 2001-02-06 | Kabushiki Kaisha Toshiba | Image detecting device and an X-ray imaging system |
| US6403965B1 (en) * | 1999-03-26 | 2002-06-11 | Kabushiki Kaisha Toshiba | X-ray image detector system |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2487566A1 (fr) * | 1980-07-25 | 1982-01-29 | Thomson Csf | Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice |
| JPS5963869A (ja) * | 1982-10-04 | 1984-04-11 | Fuji Xerox Co Ltd | 原稿読取装置 |
| JPS6353968A (ja) * | 1986-08-22 | 1988-03-08 | Nikon Corp | イメ−ジセンサ |
| DE4118154A1 (de) * | 1991-06-03 | 1992-12-10 | Philips Patentverwaltung | Anordnung mit einer sensormatrix und einer ruecksetzanordnung |
| GB9202693D0 (en) * | 1992-02-08 | 1992-03-25 | Philips Electronics Uk Ltd | A method of manufacturing a large area active matrix array |
| US5313319A (en) * | 1992-06-17 | 1994-05-17 | General Electric Company | Active array static protection devices |
| US5610403A (en) * | 1995-09-05 | 1997-03-11 | General Electric Company | Solid state radiation imager with gate electrode plane shield wires |
| US6410921B1 (en) * | 1998-01-30 | 2002-06-25 | Konica Corporation | X-ray image recording system and x-ray image recording method |
| JP4401488B2 (ja) * | 1998-09-01 | 2010-01-20 | キヤノン株式会社 | 光電変換装置 |
| US6747290B2 (en) * | 2000-12-12 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Information device |
| TW458288U (en) * | 2001-03-08 | 2001-10-01 | Liau Guo Fu | X-ray image sensor |
| US6777685B2 (en) * | 2002-04-03 | 2004-08-17 | General Electric Company | Imaging array and methods for fabricating same |
-
2003
- 2003-06-06 US US10/457,322 patent/US20040246355A1/en not_active Abandoned
-
2004
- 2004-06-01 FR FR0405882A patent/FR2855913B1/fr not_active Expired - Fee Related
- 2004-06-01 DE DE102004026949A patent/DE102004026949A1/de not_active Withdrawn
- 2004-06-04 JP JP2004167141A patent/JP4977310B2/ja not_active Expired - Fee Related
- 2004-06-07 CN CNB2004100484805A patent/CN100459135C/zh not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5062690A (en) * | 1989-06-30 | 1991-11-05 | General Electric Company | Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links |
| US5349174A (en) * | 1992-05-06 | 1994-09-20 | U.S. Philips Corporation | Image sensor with transparent capacitive regions |
| US5648654A (en) * | 1995-12-21 | 1997-07-15 | General Electric Company | Flat panel imaging device with patterned common electrode |
| US5981931A (en) * | 1996-03-15 | 1999-11-09 | Kabushiki Kaisha Toshiba | Image pick-up device and radiation imaging apparatus using the device |
| CN1224244A (zh) * | 1998-01-20 | 1999-07-28 | 夏普株式会社 | 二维图像检像器及其制造方法 |
| US6185274B1 (en) * | 1998-03-20 | 2001-02-06 | Kabushiki Kaisha Toshiba | Image detecting device and an X-ray imaging system |
| JP2000235075A (ja) * | 1999-02-16 | 2000-08-29 | Fuji Photo Film Co Ltd | 放射線固体検出器の電荷読出方法および装置、並びに放射線固体検出器 |
| US6403965B1 (en) * | 1999-03-26 | 2002-06-11 | Kabushiki Kaisha Toshiba | X-ray image detector system |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040246355A1 (en) | 2004-12-09 |
| JP4977310B2 (ja) | 2012-07-18 |
| FR2855913A1 (fr) | 2004-12-10 |
| FR2855913B1 (fr) | 2010-07-30 |
| CN1574375A (zh) | 2005-02-02 |
| DE102004026949A1 (de) | 2004-12-23 |
| JP2004363614A (ja) | 2004-12-24 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090204 Termination date: 20140607 |
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| EXPY | Termination of patent right or utility model |