JP4975101B2 - 高抵抗セラミック熱溶射コーティング素材及びこれを含む静電チャックの製造方法 - Google Patents
高抵抗セラミック熱溶射コーティング素材及びこれを含む静電チャックの製造方法 Download PDFInfo
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 90
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
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- -1 silicate compound Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Coating By Spraying Or Casting (AREA)
Description
Al2O3‐YAG複合酸化物粉末の製造
通常の知られた噴霧乾燥工程(単行本:Ceramic precursor technology and its applications, 著者:C. K. Narula, 出版社:M. Dekker (N. Y.) 出版年度:1995)を利用して下記表1に示したような組成及び平均粒径を有するAl2O3‐YAG複合酸化物粉末を製造した。
平板のAl母材(幅100mm×長さ100mm×厚さ5mm)の一面を#100Al2O3粒子を利用しブラスティング処理して表面粗度(Ra:2〜3μm)を与えた後、その表面の全面に前記製造例から製造された相互に違う組成を有する4種のAl2O3‐YAG複合酸化物粉末を使って大気プラズマ溶射法で500μm厚さで誘電層であるAl2O3‐YAG系コーティング層を形成した。Al2O3‐YAG系コーティング層の表面に50mm×50mmの面積部分を伝導性電極層であるタングステンを大気プラズマ溶射法によって50μm厚さで形成し、前記プラズマ熱溶射後コーティング層のシーリング処理はしなかった。
(比較例1)
実施例1乃至4から形成した上部誘電(絶縁)層の表面に有機系液状シーリング剤を(Metcoseal ERS, Sulzer Metco Inc., USA)塗布した後、真空において150℃で3時間加熱するシーリング処理を行ったことを除いては実施例1乃至4と同様にして誘電層及び伝導性電極層を形成した。
実施例5と同一の方法でシーリング処理された誘電層及び伝導性電極層を形成するが、誘電層をAl2O3‐YAG複合酸化物粉末の代りに純度が99.9wt%のAl2O3溶射粉末を使った。
実施例9においては、従来のAl2O3プラズマコーティング層と本発明の実施例によるAl2O3YAG系プラズマコーティング層の実際静電チャックとしての適用による電気的絶縁特性を評価した結果である。これのために直流電圧を印加することができる金属電極棒が含まれた縮まった大きさ(幅100mm×長さ120mm)のAl静電チャック母材を加工し、その上部にアンダーコート、下部絶縁(誘電)層、導電性電極層、上部誘電(絶縁)層をプラズマ溶射法を利用して順次に積層した。この時、導電性電極層のコーティング面積は80mm×100mmであった。金属電極棒は中間の伝導性電極層と直接的に連結され、金属電極棒の周りは下部絶縁(誘電)層と同一の材料で処理しAl母材と絶縁した。アンダーコートとしては100μm厚さのNiコーティング層を形成し、伝導性電極層としては50μm厚さのWコーティング層を形成した。比較例の場合は下部及び上部誘電(絶縁)層として純度が99.9wt%のAl2O3コーティング層を、本発明の実施例の場合は製造例2のAl2O3‐YAG複合酸化物粉末(Al2O3:YAG重量比=50:50、平均粒径35μm)を使ってAl2O3‐YAG系コーティング層をそれぞれ400μm厚さでプラズマ溶射法を利用し形成した。プラズマコーティング完了後、上部誘電(絶縁)層の表面にエポキシ系液状シーリング剤(Metcoseal ERS, Sulzer Metco Inc., USA)を塗布した後、真空において150℃で3時間加熱するシーリング処理を行った。
前記実施例9よりも小さい静電チャックの特性に基づいて、実際の大きさのディスプレーパネル装備用静電チャック(横1950mm×縦2150mm)を実施例9と同一の方法で製造し、静電チャックの電気的絶縁特性を評価した。従来のAl2O3熱溶射コーティング層が適用された静電チャックは、印加電圧の増加とともに漏洩電流が大きく増加し、1〜2kV範囲の低い印加電圧下でアーク放電(arcing)が発生するかまたは絶縁破壊になることによって静電チャックの機能を消失した。一方、本発明のAl2O3‐YAG系コーティング層が適用された静電チャックの場合、印加電圧2.5〜3.0kVでガラス基板を固定するための十分な静電気力を発生させ、その以上の電圧でも絶縁破壊が生じないと共に許容された範囲の漏洩電流を示した。
3:下部絶縁層 4:電極層 5:上部絶縁層
6:シリコンウェーハ 7:直流電源
Claims (5)
- 金属母材に下部誘電層、伝導性電極層及び上部誘電層を積層して形成する静電チャック製造方法において、
前記下部誘電層または上部誘電層の中で1層以上が、Al 2 O 3 粉末とYAG(Y 3 Al 5 O 12 )粉末の混合物を熱処理して得られるAl2O3‐YAG複合酸化物粉末を熱溶射コーティングして形成されることを特徴とする、Al2O3‐YAG複合酸化物系誘電層を有する静電チャックの製造方法。 - 前記Al2O3‐YAG複合酸化物は、5乃至95重量%のYAG及び5乃至95重量%のAl2O3とからなるAl2O3‐YAG複合酸化物系誘電層を有することを特徴とする請求項1に記載の静電チャックの製造方法。
- 前記上部誘電層または下部誘電層の中でいずれか1つ以上の表面は液状の有機系または無機系シーリング液によってシーリング処理され、シーリング処理された誘電層は1×1015Ω・cm以上の体積固有抵抗及び30kV/mm以上の絶縁破壊電圧を有することを特徴とする請求項2に記載のAl2O3‐YAG複合酸化物系誘電層を有する静電チャックの製造方法。
- 前記Al2O3‐YAG複合酸化物粉末は、Al2O3粉末及びYAG粉末を含むスラリー混合液を噴霧乾燥させて5乃至100μmの大きさに製造されたことを特徴とする請求項1に記載のAl2O3‐YAG複合酸化物系誘電層を有する静電チャックの製造方法。
- 請求項1乃至4のいずれか1つに記載の製造方法によって製造されたAl2O3‐YAG複合酸化物系誘電層を有する静電チャック。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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KR10-2006-0067754 | 2006-07-20 | ||
KR20060067754 | 2006-07-20 | ||
KR10-2007-0015622 | 2007-02-14 | ||
KR1020070015622A KR100877381B1 (ko) | 2006-07-20 | 2007-02-14 | 고저항 세라믹 열용사 코팅 소재 및 이를 포함하는정전척의 제조방법 |
PCT/KR2007/000855 WO2008010632A1 (en) | 2006-07-20 | 2007-02-16 | Electrostatic chuck with high-resistivity ceramic coating materials |
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JP2010515237A JP2010515237A (ja) | 2010-05-06 |
JP4975101B2 true JP4975101B2 (ja) | 2012-07-11 |
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KR102123912B1 (ko) * | 2018-11-21 | 2020-06-18 | (주)제니스월드 | 세라믹 코팅층 표면 개질 방법을 이용한 정전척의 제조방법 |
DE102022114212A1 (de) | 2021-06-09 | 2022-12-15 | Electronics And Telecommunications Research Institute | Hochspannungs-Ansteuervorrichtung |
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KR20010062209A (ko) * | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
JP4272786B2 (ja) * | 2000-01-21 | 2009-06-03 | トーカロ株式会社 | 静電チャック部材およびその製造方法 |
KR100682740B1 (ko) * | 2004-01-15 | 2007-02-15 | 주식회사 솔믹스 | 반도체 제조설비의 코팅층 형성방법 |
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