JP4969041B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4969041B2
JP4969041B2 JP2005015070A JP2005015070A JP4969041B2 JP 4969041 B2 JP4969041 B2 JP 4969041B2 JP 2005015070 A JP2005015070 A JP 2005015070A JP 2005015070 A JP2005015070 A JP 2005015070A JP 4969041 B2 JP4969041 B2 JP 4969041B2
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Japan
Prior art keywords
layer
electrode layer
film
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2005015070A
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English (en)
Japanese (ja)
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JP2005244197A5 (enExample
JP2005244197A (ja
Inventor
舜平 山崎
理 中村
慎志 前川
厳 藤井
敏行 伊佐
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005015070A priority Critical patent/JP4969041B2/ja
Publication of JP2005244197A publication Critical patent/JP2005244197A/ja
Publication of JP2005244197A5 publication Critical patent/JP2005244197A5/ja
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Publication of JP4969041B2 publication Critical patent/JP4969041B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2005015070A 2004-01-26 2005-01-24 表示装置の作製方法 Expired - Fee Related JP4969041B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005015070A JP4969041B2 (ja) 2004-01-26 2005-01-24 表示装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004017448 2004-01-26
JP2004017448 2004-01-26
JP2004017382 2004-01-26
JP2004017382 2004-01-26
JP2005015070A JP4969041B2 (ja) 2004-01-26 2005-01-24 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005244197A JP2005244197A (ja) 2005-09-08
JP2005244197A5 JP2005244197A5 (enExample) 2008-03-13
JP4969041B2 true JP4969041B2 (ja) 2012-07-04

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Family Applications (1)

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JP2005015070A Expired - Fee Related JP4969041B2 (ja) 2004-01-26 2005-01-24 表示装置の作製方法

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JP (1) JP4969041B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4678574B2 (ja) * 2004-08-23 2011-04-27 株式会社リコー 積層構造体、積層構造体を用いた電子素子、電子素子アレイ及び表示装置
EP1995787A3 (en) * 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method therof
KR101197053B1 (ko) * 2005-09-30 2012-11-06 삼성디스플레이 주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
US7943721B2 (en) * 2005-10-05 2011-05-17 Kovio, Inc. Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions
KR100766318B1 (ko) 2005-11-29 2007-10-11 엘지.필립스 엘시디 주식회사 유기 반도체 물질을 이용한 박막트랜지스터와 이를 구비한액정표시장치용 어레이 기판 및 그 제조방법
JP5167707B2 (ja) * 2006-08-04 2013-03-21 株式会社リコー 積層構造体、多層配線基板、アクティブマトリックス基板、並びに電子表示装置
JP5142831B2 (ja) 2007-06-14 2013-02-13 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP5155059B2 (ja) * 2008-08-06 2013-02-27 株式会社アルバック 表面修飾基板の製造方法
KR101563527B1 (ko) * 2008-09-19 2015-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101646783B1 (ko) * 2009-12-08 2016-08-08 엘지디스플레이 주식회사 휴대용 컴퓨터
EP2398086A1 (en) * 2010-06-17 2011-12-21 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Opto-electric device and method of manufacturing thereof
JP5811560B2 (ja) * 2011-03-25 2015-11-11 セイコーエプソン株式会社 回路基板の製造方法
JP5711585B2 (ja) * 2011-03-30 2015-05-07 株式会社アドテックエンジニアリング 薄膜トランジスタの製造装置およびその製造方法、ならびにプログラム
JPWO2016147481A1 (ja) * 2015-03-13 2018-01-25 コニカミノルタ株式会社 透明電極、透明電極の製造方法及び有機エレクトロルミネッセンス素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2791422B2 (ja) * 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
GB9726511D0 (en) * 1997-12-13 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such
JP2002009287A (ja) * 2000-06-19 2002-01-11 Matsushita Electric Ind Co Ltd 半導体装置と半導体装置の製造方法
JP3967259B2 (ja) * 2001-12-11 2007-08-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003241177A (ja) * 2002-02-14 2003-08-27 Dainippon Printing Co Ltd カラー液晶表示装置における電極基板の製造方法
JP4572501B2 (ja) * 2002-02-27 2010-11-04 コニカミノルタホールディングス株式会社 有機薄膜トランジスタの製造方法
JP2003318193A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイス、その製造方法及び電子装置
JP2003318401A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器

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JP2005244197A (ja) 2005-09-08

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