JP4969041B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

Info

Publication number
JP4969041B2
JP4969041B2 JP2005015070A JP2005015070A JP4969041B2 JP 4969041 B2 JP4969041 B2 JP 4969041B2 JP 2005015070 A JP2005015070 A JP 2005015070A JP 2005015070 A JP2005015070 A JP 2005015070A JP 4969041 B2 JP4969041 B2 JP 4969041B2
Authority
JP
Japan
Prior art keywords
layer
electrode layer
film
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005015070A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005244197A5 (enrdf_load_stackoverflow
JP2005244197A (ja
Inventor
舜平 山崎
理 中村
慎志 前川
厳 藤井
敏行 伊佐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005015070A priority Critical patent/JP4969041B2/ja
Publication of JP2005244197A publication Critical patent/JP2005244197A/ja
Publication of JP2005244197A5 publication Critical patent/JP2005244197A5/ja
Application granted granted Critical
Publication of JP4969041B2 publication Critical patent/JP4969041B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2005015070A 2004-01-26 2005-01-24 表示装置の作製方法 Expired - Fee Related JP4969041B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005015070A JP4969041B2 (ja) 2004-01-26 2005-01-24 表示装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004017382 2004-01-26
JP2004017382 2004-01-26
JP2004017448 2004-01-26
JP2004017448 2004-01-26
JP2005015070A JP4969041B2 (ja) 2004-01-26 2005-01-24 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005244197A JP2005244197A (ja) 2005-09-08
JP2005244197A5 JP2005244197A5 (enrdf_load_stackoverflow) 2008-03-13
JP4969041B2 true JP4969041B2 (ja) 2012-07-04

Family

ID=35025556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005015070A Expired - Fee Related JP4969041B2 (ja) 2004-01-26 2005-01-24 表示装置の作製方法

Country Status (1)

Country Link
JP (1) JP4969041B2 (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4678574B2 (ja) * 2004-08-23 2011-04-27 株式会社リコー 積層構造体、積層構造体を用いた電子素子、電子素子アレイ及び表示装置
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
KR101197053B1 (ko) * 2005-09-30 2012-11-06 삼성디스플레이 주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
EP1943669A4 (en) * 2005-10-05 2012-06-13 Kovio Inc LINEAR AND NETWORKED HIGHLY MOLECULAR POLYSILANES, POLYGERMANES AND COPOLYMERS THEREOF, COMPOSITIONS CONTAINING THEM AND METHOD FOR THE PREPARATION AND USE OF SUCH COMPOUNDS AND COMPOSITIONS
KR100766318B1 (ko) 2005-11-29 2007-10-11 엘지.필립스 엘시디 주식회사 유기 반도체 물질을 이용한 박막트랜지스터와 이를 구비한액정표시장치용 어레이 기판 및 그 제조방법
JP5167707B2 (ja) * 2006-08-04 2013-03-21 株式会社リコー 積層構造体、多層配線基板、アクティブマトリックス基板、並びに電子表示装置
JP5142831B2 (ja) 2007-06-14 2013-02-13 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP5155059B2 (ja) * 2008-08-06 2013-02-27 株式会社アルバック 表面修飾基板の製造方法
KR101920196B1 (ko) * 2008-09-19 2018-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101646783B1 (ko) * 2009-12-08 2016-08-08 엘지디스플레이 주식회사 휴대용 컴퓨터
EP2398086A1 (en) * 2010-06-17 2011-12-21 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Opto-electric device and method of manufacturing thereof
JP5811560B2 (ja) * 2011-03-25 2015-11-11 セイコーエプソン株式会社 回路基板の製造方法
JP5711585B2 (ja) * 2011-03-30 2015-05-07 株式会社アドテックエンジニアリング 薄膜トランジスタの製造装置およびその製造方法、ならびにプログラム
JPWO2016147481A1 (ja) * 2015-03-13 2018-01-25 コニカミノルタ株式会社 透明電極、透明電極の製造方法及び有機エレクトロルミネッセンス素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2791422B2 (ja) * 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
GB9726511D0 (en) * 1997-12-13 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such
JP2002009287A (ja) * 2000-06-19 2002-01-11 Matsushita Electric Ind Co Ltd 半導体装置と半導体装置の製造方法
JP3967259B2 (ja) * 2001-12-11 2007-08-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003241177A (ja) * 2002-02-14 2003-08-27 Dainippon Printing Co Ltd カラー液晶表示装置における電極基板の製造方法
JP4572501B2 (ja) * 2002-02-27 2010-11-04 コニカミノルタホールディングス株式会社 有機薄膜トランジスタの製造方法
JP2003318401A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器
JP2003318193A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイス、その製造方法及び電子装置

Also Published As

Publication number Publication date
JP2005244197A (ja) 2005-09-08

Similar Documents

Publication Publication Date Title
CN101673758B (zh) 显示器件及其制造方法
CN100533808C (zh) 显示器件及其制造方法以及电视设备
CN100593244C (zh) 形成图案的方法、薄膜晶体管、显示设备及其制造方法
US8222636B2 (en) Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
US8318601B2 (en) Method for manufacturing thin film transistor and display device
US8912546B2 (en) Thin film transistor and display device
US8158517B2 (en) Method for manufacturing wiring substrate, thin film transistor, display device and television device
US20050196710A1 (en) Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus
JP4969041B2 (ja) 表示装置の作製方法
JP4628004B2 (ja) 薄膜トランジスタの作製方法
JP4854994B2 (ja) 配線基板の作製方法及び薄膜トランジスタの作製方法
JP5057652B2 (ja) 薄膜トランジスタの作製方法
JP5089027B2 (ja) 半導体装置
JP5116212B2 (ja) 薄膜トランジスタの作製方法
JP2005286320A (ja) パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置
JP4877865B2 (ja) 薄膜トランジスタの作製方法及び表示装置の作製方法
JP4879496B2 (ja) パターン形成方法
JP4884675B2 (ja) 半導体装置の作製方法
JP5025208B2 (ja) 薄膜トランジスタの作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080124

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080124

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110222

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110419

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111101

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120302

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120327

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120403

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150413

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150413

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees