JP4967538B2 - Surface light emitting device, image reading device and image writing device using surface light emitting device, and method for manufacturing surface light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface light emitting element capable of forming a surface light emitting element more improved in light emission efficiency, to provide an image reading device and an image writing device using the surface light emitting device, and to provide the manufacturing method of the surface light emitting element. <P>SOLUTION: The surface light emitting element is formed through a method of forming a high carrier concentration region 101 or 102 which functions as a p-type semiconductor layer or an n-type semiconductor layer, at a specific part of a semiconductor substrate besides an epitaxial film forming method, such as an MOCVD method, an MBE method, etc, through which a film is formed on all the surface of the semiconductor substrate. The high carrier concentration region 101 or 102 formed at the specific position reduces an electric contact resistance of ohmic contact between an electrode and the semiconductor layer, and furthermore moves a light emitting region Lc of the semiconductor substrate located around an electrode 87, to a position that is not shaded with the electrode 87. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

  The present invention relates to a surface light-emitting element, an image reading apparatus and an image writing apparatus using the surface light-emitting element, and a method for manufacturing the surface light-emitting element, and more particularly to a structure and a method for manufacturing a surface light-emitting element that improves luminous efficiency.

  Conventionally, a light emitting diode and a laser diode are known as typical light emitting elements. In particular, a light emitting diode is formed in the process of recombination by forming a pn junction or pin junction of a compound semiconductor (GaAs, GaP, GaAlAs, etc.) and applying a forward voltage to the semiconductor to inject carriers into the junction. It utilizes the luminescence phenomenon.

  Negative resistance elements (light emitting thyristors, laser thyristors, etc.) having a light emitting function are also known as light emitting elements having the same light emission mechanism as light emitting diodes. A light-emitting thyristor is manufactured by forming a pnpn structure with a compound semiconductor as described above, and has a current-voltage characteristic (hereinafter referred to as a thyristor characteristic) exhibiting an S-shaped negative resistance similar to a general thyristor. It is known to have and function.

  Further, self-scanning light-emitting element arrays (hereinafter also referred to as SLEDs) using surface-emitting light-emitting thyristors (hereinafter referred to as surface-emitting thyristors) have already been disclosed in many applications (for example, Patent Document 1). reference). The SLED has a function of performing lighting control for each light emitting element and lighting scanning in the longitudinal direction of the light emitting element array. FIG. 15 is a plan view showing an arrangement state of light emitting element array chips using surface emitting thyristors. In the drawing, a plurality of surface emitting thyristors 84 are linearly arranged on a plurality of light emitting element array chips 80. A plurality of light emitting element array chips 80 are connected so as to be connected in a substantially straight line, thereby forming a light emitting element array. Then, the long direction of the SLED can be arranged so as to correspond to the main scanning direction of the image writing device, for example, and function as the light emitting means of the image writing device.

  FIG. 16 is an enlarged view of the light-emitting element array chip shown in FIG. The plurality of surface emitting thyristors 84 wired in parallel are each supplied with power from the bonding pad 82. It is to be noted that a plurality of such rows of surface-emitting thyristors 84 wired in parallel can be provided, and various light emission controls can be performed by controlling the power feeding timing from the bonding pads 82.

  FIG. 17 is an enlarged view of one surface emitting thyristor shown in FIG. In the figure, the illustration of the gate electrode portion of the surface emitting thyristor is omitted. An electrode 87 is provided at the center of the surface emitting thyristor 84 and is electrically connected to the wiring 82a through the contact hole Ch. It can be seen that the electrode 87 is provided so as to cover the center of the light emitting portion La of the surface emitting thyristor 84.

  FIG. 18 is a cross-sectional view of a conventional surface-emitting thyristor having a mesa-type pnpn structure. 18 may be considered as a cross-sectional view of the surface emitting thyristor in the A-A ′ direction shown in FIG. The surface-emitting thyristor is in ohmic contact with the n-type semiconductor layer 91, the p-type semiconductor layer 90, the n-type semiconductor layer 89, the p-type semiconductor layer 88, and the p-type semiconductor layer 88 formed on the n-type semiconductor substrate 92. And an electrode 87 formed as described above. Due to the structure of the surface emitting thyristor 84, an insulating film 86 (which is a light-transmitting insulating material) is provided on the whole, and an aluminum (Al) wiring 82a is provided thereon. A contact hole Ch for electrically connecting the electrode 87 and the Al wiring 82a is formed in the insulating film 86. A cathode electrode 93 is provided on the back surface of the n-type semiconductor substrate 92, and the electrode 87 is configured as an anode electrode.

  FIG. 19 is a cross-sectional view of a conventional surface-emitting thyristor showing how current flows in the surface-emitting thyristor having the pnpn structure shown in FIG. In such a surface emitting thyristor 84 having a pnpn structure, a current flowing from the anode electrode 87 (hereinafter referred to as an injection current) flows toward the cathode electrode 93 while spreading in the semiconductor as indicated by an arrow in FIG. Here, the emission center of the light emitting region Lb in the n-type semiconductor layer 89 and the p-type semiconductor layer 90 constituting the gate layer (that is, the region where the current density of the injected current is high) is mainly directly below the electrode 87. That is, the conventional surface emitting thyristor has a structure for reducing the light emission efficiency such that the light emitted from the light emitting region Lb is blocked by the electrode 87 or the Al wiring 82a.

  Therefore, in order to improve the light emission efficiency by improving the structure of such a surface emitting thyristor, an insulating layer (not shown) is provided at a portion in contact between the electrode 87 and the p-type semiconductor layer 88, thereby A structure is disclosed in which an injection current is prevented from flowing directly below the electrode 87 (see, for example, Patent Document 2). Alternatively, a structure is disclosed in which the injection current is uniformly distributed by increasing the peripheral length of the electrode 87 (see, for example, Patent Document 2).

  In addition to this, there is a method in which the anode electrode is disposed outside the light emitting region of the surface light emitting element and in the vicinity of one side of the light emitting region in order to avoid an electrode structure that causes light shielding. For example, in the uppermost semiconductor layer of the surface light emitting element, a first impurity diffusion layer formed so as to connect the upper part on the surface side and the anode electrode, and a lower part of the first impurity diffusion layer without the anode electrode That is, a light-emitting element having a second impurity diffusion layer connected to the first impurity diffusion layer under the light-emitting region of the surface light-emitting element is disclosed (for example, see Patent Document 3).

Japanese Patent No. 2577089 Japanese Patent Laid-Open No. 9-92885 Japanese Unexamined Patent Publication No. 5-145115

  As described above, in a surface light emitting device such as a surface light emitting diode or a surface light emitting thyristor, there is a problem in that a light emission center is located directly below an electrode for injecting current, and the electrode itself becomes a light shielding layer, resulting in a decrease in light emission efficiency. In addition to the prior art as shown in Patent Document 2, a technique for further improving the light emission efficiency is desired.

  Further, the structure of the conventional light emitting thyristor 84 shown in FIG. 18 has a problem that the contact resistance between the electrode 87 and the p-type semiconductor layer 88 is likely to vary.

  In general, in order to realize the thyristor function of a light-emitting thyristor, a four-layer light-emitting thyristor 84 in which p-type and n-type semiconductor layers are alternately stacked is used for MOCVD (Metal-Organic Chemical Vapor Deposition). It is formed by a vapor deposition method. Formation by the MOCVD method has a stable film formation rate and excellent reproducibility of the layer structure. In addition, since the film formation reaction furnace can be enlarged, a large number of semiconductor substrates can be formed at a time, which is suitable for mass production.

  On the other hand, one of methods for evaluating performance as a light emitting element is light emission efficiency. In a broad sense, the luminous efficiency represents a ratio of how much electric energy supplied to the light emitting element is finally used as light. Therefore, when a light emitting element is used for various functional devices on a commercial basis, an element with high luminous efficiency and low energy consumption is required. As one means for meeting this requirement, a technique for reducing the contact resistance between the electrode located on the path for supplying electric energy from the external drive circuit to the semiconductor element and the semiconductor element can be considered. In order to reduce the contact resistance, the carrier concentration for determining the p-type or n-type of the semiconductor layer may be increased in the semiconductor layer in contact with the electrode.

However, in the MOCVD method, depending on various conditions of epitaxial growth, there is a limit to the carrier concentration that can be realized. Generally, there is currently an upper limit in the vicinity of 2 × 10 ¹⁸ cm ^{−3 for} p-type, The n-type has an upper limit in the vicinity of 8 × 10 ¹⁸ cm ⁻³ . Due to the limit of the carrier concentration, there is a limit in reducing the contact resistance between the electrode and the semiconductor layer. That is, there is a limit in reducing the contact resistance by controlling the carrier concentration only by the MOCVD method.

A conventional surface-emitting thyristor actually manufactured will be described as an example. In FIG. 18, when the p-type semiconductor layer 88 is a GaAs layer having a carrier concentration near 2 × 10 ¹⁸ cm ⁻³ and a very general ohmic electrode having an AuZn / Au structure is formed on the anode electrode, the contact resistance is It was about 3 × 10 ⁻⁵ Ωcm ² . This contact resistance is a resistance value that is relatively not negligible from the viewpoint of improving the light emission efficiency, and generates wasteful power consumption. This contact resistance is not formed intentionally, and it is difficult to control the resistance value by the MOCVD method.

  Furthermore, when a plurality of surface-emitting thyristors formed only by the MOCVD method are arranged to form a light-emitting element array (for example, SLED), the contact resistance between the electrode and the semiconductor layer in each surface-emitting thyristor varies. It is unavoidable to have a large value. That is, there is a problem that non-uniformity of the light amount distribution in the longitudinal direction (that is, the main scanning direction) of the light emitting element array is increased.

  Further, in the surface light emitting device described in Patent Document 3, since the anode electrode is disposed outside the light emitting region of the surface light emitting device and in the vicinity of one side of the light emitting region, the first impurity diffusion layer is provided in the second light emitting region. A uniform current density distribution cannot be obtained at the emission center unless the concentration is considerably higher than the impurity diffusion. In addition, such a structure is not preferable from the viewpoint of improving the light emission efficiency because, in principle, the path of current flowing between the electrodes becomes long, so that the resistance can be increased.

  In order to improve the above-described problems, an object of the present invention is to provide a surface light emitting element, an image reading apparatus and an image writing apparatus using the surface light emitting element, and a method for manufacturing the surface light emitting element.

  In order to solve the above-mentioned problems, a method for manufacturing a surface light emitting device according to the present invention is based on an epitaxial growth method such as MOCVD method or MBE method (Molecular Beam Epitaxy) for forming a film on the entire surface of a semiconductor substrate. In addition to the film technique, an impurity diffusion method or an ion implantation method is combined to form a high concentration carrier concentration region (hereinafter also referred to as a high concentration carrier region) in a part of the semiconductor substrate. As a result, it is possible to form a surface light emitting element having a high light emission efficiency that cannot be realized only by a film formation technique for the entire surface of a semiconductor substrate.

  More specifically, another surface light emitting device according to the present invention includes a plurality of first conductive type semiconductor layers and a plurality of stacked second conductive type semiconductor layers different from the first conductive type. A semiconductor stacked structure having a semiconductor layer, a first electrode formed on the uppermost layer of the plurality of semiconductor layers, and a second electrode formed on the lowermost layer of the plurality of semiconductor layers. The semiconductor multilayer structure is formed by an epitaxial film forming technique such as MOCVD method or MBE method. Further, in the surface light emitting device according to the present invention, the region of the light emitting surface is located around the first electrode, and the high carrier concentration region is formed at least in the uppermost layer of the region of the light emitting surface. Have The high carrier concentration region is formed by an impurity diffusion method or an ion implantation method. Thereby, the resistance value of the high carrier concentration region of the semiconductor layer located in the peripheral portion of the first electrode can be made smaller than the resistance value of the region of the semiconductor layer located directly below the first electrode, It is also possible to move the current density (that is, to move the direction of the injected current) from the region directly below the first electrode that becomes the light shielding layer to the region that does not become the light shielding layer. Accordingly, the light emitting efficiency of the surface light emitting element having a function of emitting light from the light emitting side of the uppermost layer of the plurality of semiconductor layers by the current injected from the first electrode to the second electrode is improved.

  According to another aspect of the present invention, a surface light emitting device includes: a semiconductor layer having a first conductivity type; and a plurality of semiconductor layers in which semiconductor layers having a second conductivity type different from the first conductivity type are alternately stacked. A semiconductor stacked structure having a low-conductivity semiconductor layer, a first electrode formed in the low-conductivity semiconductor layer, and a second electrode formed in the lowest layer of the plurality of semiconductor layers . The semiconductor multilayer structure is formed by an epitaxial film forming technique such as MOCVD method or MBE method. Further, in the surface light emitting device according to the present invention, the region of the light emitting surface is located around the first electrode, and the light emitting surface region is in the uppermost layer (the semiconductor layer of low conductivity). A high carrier concentration region formed at least. The high carrier concentration region is formed by an impurity diffusion method or an ion implantation method. By forming the low-conductivity semiconductor layer, the current density is further moved from the region immediately below the first electrode that becomes the light shielding layer to the region that does not become the light shielding layer (that is, the direction of the injection current is changed). Can be moved). Accordingly, the light emitting efficiency of the surface light emitting element having a function of emitting light from the light emitting side of the uppermost layer of the plurality of semiconductor layers by the current injected from the first electrode to the second electrode is improved.

  As yet another aspect, the image reading apparatus of the present invention includes a light source for irradiating light on a document placed on a document table, and reflected light from the document irradiated from the light source to receive an image of the document. A plurality of light receiving elements for reading information; and an erecting equal-magnification lens array for imaging reflected light from the document on the plurality of light receiving elements, wherein the light source includes the surface light emitting element according to the present invention. .

  As yet another aspect, the image writing apparatus of the present invention includes a light emitting element array having a plurality of light emitting elements, a photosensitive drum on which image information is written based on light emission of the light emitting element array, and light emission of the light emitting element array. And an erecting equal-magnification lens array that forms an image on the photosensitive drum, and the plurality of light emitting elements include the surface light emitting elements according to the present invention.

  Apart from the above-described embodiment, the present invention can also be characterized as a method for manufacturing a surface light emitting device according to the present invention.

  According to the present invention, a surface light emitting device with higher luminous efficiency can be formed.

  First, in order to help understanding of the structure and function of the surface light emitting device according to the present invention, the structure and function will be described below.

  FIG. 1 is a plan view showing an example of a surface-emitting thyristor according to the present invention. An electrode 87 is provided at the center of the surface emitting thyristor 100, and is electrically connected to the wiring 82a through the contact hole Ch. The electrode 87 is provided so as to cover the center of the light emitting portion La of the surface emitting thyristor 100. FIG. 2 is a cross-sectional view of a conventional surface emitting thyristor having a mesa pnpn structure. In FIG. 2, it may be considered as a cross-sectional view of the surface emitting thyristor in the B-B ′ direction shown in FIG. In the figure, the same reference numerals are given to the same components as those of the surface emitting thyristor shown in FIG. 18, and the description of the same components is omitted. A surface-emitting thyristor 100 shown in FIG. 2 has a pnpn structure and can be formed by an epitaxial film forming technique such as MOCVD or MBE.

  1 and 2, a contact resistance exists between the anode electrode 87 and the p-type semiconductor layer 88 as described above (not shown). Therefore, a high concentration carrier concentration region 101 is formed in the region of the p-type semiconductor layer 88 so that the resistance value of the contact resistance is reduced. The carrier concentration region 101 is p-type in the figure. In order to form the high concentration carrier concentration region 101 in the p-type semiconductor layer 88, an impurity diffusion method or an ion implantation method can be used. Thereby, the resistance value of the ohmic contact of the anode electrode 87 can be reduced, and the energy loss caused by the contact resistance can be reduced. From the viewpoint of reducing the ohmic contact resistance value, it is preferable to form a high concentration carrier concentration region 101 including the lower portion of the anode electrode 87, but more preferably, for the reason described later, the anode electrode 87. A high concentration carrier concentration region 101 is formed at least directly near the three sides (see FIG. 1) of the anode electrode 87 where light emission is not shielded except for the lower portion of the electrode.

  1 and 2, a high concentration carrier concentration region 102 can be formed in the region of the p-type semiconductor layer 88. The carrier concentration region 102 is p-type in the figure. A current path of the injected current from the fed anode electrode 87 is induced by the carrier concentration region 102 and reaches the cathode electrode 93 mainly via the current path as shown by the arrow shown in FIG. Accordingly, the emission center of the light emitting region Lc in the n-type semiconductor layer 89 and the p-type semiconductor layer 90 constituting the gate layer (that is, a region where the current density of the injected current is high) is located at a position moved from directly below the electrode 87. . Thereby, the light generated in the light emitting region Lc is irradiated to the outside without being blocked by the anode electrode 87, and the light emission efficiency can be improved.

  Preferably, the high carrier concentration region 101 (corresponding to the high carrier concentration region 111 in Examples 1-4 described later) and the high carrier concentration region 102 (in Examples 1-4 described later, the high carrier concentration region). (Corresponding to 112) is formed so as not to separate. Further, the carrier concentration in the high carrier concentration region 102 is set higher than the carrier concentration in the high carrier concentration region 101. Further, preferably, at least the high carrier concentration region 101 is formed immediately below a position close to the three sides of the electrode 87 other than a position directly below the electrode 87. That is, the high carrier concentration region 101 (and / or the high carrier concentration region 102) is formed at least at a position away from directly below the center position of the anode electrode 87 and immediately below the side of the anode electrode 87. . As a result, the current density decreases at a position directly below the electrode 87, and the current density can be increased immediately below a position near the side of the electrode 87. In addition, since the structure has a light emitting region around the electrode 87, it is preferable to reduce the resistance value due to ohmic contact of the electrode 87 and to shorten the current path flowing between the electrodes while avoiding the influence of light shielding by the electrode 87. Can be realized.

  Here, the center position of the anode electrode 87 means, for example, the intersection of line segments connecting two opposing corners in the rectangular shape of the anode electrode in the case of a rectangular anode electrode from the plan view shown in FIG. Alternatively, if the anode electrode has a circular shape, an elliptical shape, or an arbitrary shape, the center is defined as the center of gravity in the shape. The center position of the high carrier concentration region 102 may be similarly understood. In the above description, the structure and function of the present invention have been described with reference to FIGS. 1 and 2, but the present invention is not limited thereto.

  Next, a manufacturing method and structure of the surface-emitting thyristor according to the first embodiment of the present invention will be described.

(Example 1)
FIG. 3 is a diagram showing a method for manufacturing the surface-emitting thyristor of Example 1 according to the present invention. In the figure, the same reference numerals are assigned to the same components as those of the surface emitting thyristor 100 shown in FIG.

First, in step (a), an n-type semiconductor layer 91 (film thickness 0.5 μm, impurity concentration 4 × 10 ¹⁷ cm ^{− is} formed on an n-type semiconductor substrate 92 (impurity concentration 1 × 10 ¹⁸ cm ⁻³ ) by MOCVD. ³ ), p-type semiconductor layer 90 (film thickness 0.5 μm, impurity concentration 1 × 10 ¹⁷ cm ⁻³ ), n-type semiconductor layer 89 (film thickness 1.0 μm, impurity concentration 4 × 10 ¹⁷ cm ⁻³ ) . Thereby, the semiconductor multilayer structure 110a is formed.

  Next, in step (b), first, the high carrier concentration region 111 is formed by diffusing Zn from the upper surface of the n-type semiconductor layer 89 by an impurity diffusion method. By causing the high carrier concentration region 111 to function as a p-type semiconductor layer, a pnpn structure that functions as a surface-emitting thyristor is formed.

More specifically, first, in order to form the high carrier concentration region 111 in a desired region, a diffusion window (not shown) having a desired shape is formed on the semiconductor stacked structure 110a using a SiN film. . Next, a semiconductor laminated structure 110a and 0.5 g of Zn ₃ As ₂ grains serving as a diffusion source are put in a quartz ampule (hereinafter simply referred to as an ampule) and the inside of the ampule is 1 × 10 ⁻⁶ Torr ( = 0.133322mPa) Weld and seal the ampoule tube under vacuum. Next, heat treatment is performed in a diffusion furnace at 570 ° C. for 1 hour. After cooling for 1 hour after the heat treatment, the semiconductor multilayer structure 110a is taken out from the ampoule. Thereafter, SiN used for forming the diffusion window is removed by dry etching with CF4 gas. Finally, in step (b), an anode electrode 87 is formed on the semiconductor multilayer structure 110a formed in step (a). In addition, as a result of cleaving the semiconductor laminated structure 110a subjected to diffusion treatment under these conditions and observing the diffusion portion with a SEM (Scanning Electron Microscope), a high carrier concentration is observed in a portion from the surface to a depth of 0.3 μm. It is confirmed that the area 111 is formed.

  The surface layer portion of the high carrier concentration region 111 has a high concentration, and the contact resistance with the anode electrode 87 is suitably reduced. On the other hand, since the concentration decreases as the diffusion depth of the high carrier concentration region 111 increases, a concentration suitable for exhibiting the thyristor function is obtained near the junction between the n-type semiconductor layer 89 and the high carrier concentration region 111. It is done. That is, the high carrier concentration region 111 functions as a p-type semiconductor layer. After the Zn diffusion, an AuZn / An anode electrode 87 is formed on the high carrier concentration region 111, and an AuGe / Ni / Au gate electrode 94 is formed on the n-type semiconductor layer 89. From the viewpoint of reducing the resistance value of the ohmic contact, it is preferable to form a high concentration carrier concentration region 111 including the lower portion of the anode electrode 87, but more preferably described in Example 3 described later. As described above, at least the high-concentration carrier concentration region 111 is formed directly under the vicinity of the three sides (see FIG. 1) of the anode electrode 87 where light emission is not shielded, except under the anode electrode 87.

  Next, in step (c), the cathode electrode 93, the Si02 insulating film 86, the anode electrode wiring 82a, and the gate electrode wiring 82b are formed on the back surface of the semiconductor multilayer structure 110a. Thereby, the surface emitting thyristor of the present embodiment can be manufactured.

  The surface-emitting thyristor manufactured according to FIG. 3 had the same thyristor characteristics as compared with the conventional surface-emitting thyristor in which the anode layer was formed only by the MOCVD method. On the other hand, a reduction in the contact resistance between the anode electrode 87 and the high carrier concentration region 111 has been confirmed as an improvement in luminous efficiency, and in this example, it is 1.25 times that in the conventional surface-emitting thyristor. It has been confirmed that.

  In the manufacturing process of the present embodiment, a diffusion process (for example, impurity diffusion method) is added to a conventional manufacturing process (for example, MOCVD method). However, in the manufacturing process of the present embodiment, the gate electrode 94 can be formed on the n-type semiconductor layer 89 constituting the gate. That is, referring to FIG. 19, the etching of p-type semiconductor layer 88 for the ohmic contact with gate electrode 94 (hereinafter referred to as gate lead-out etching), which is required in the pnpn structure, is not required. Therefore, the load of the manufacturing process can be reduced.

  Further, in the case of the structure shown in FIG. 3, no step-out etching is required, so that a step on the semiconductor stacked structure 110a (hereinafter referred to as a mesa etching step) does not occur. As a result, it is possible to form the insulating film 86 and the wirings 82a and 82b on a flatter surface than the conventional pnpn structure, and it is possible to form a favorable wiring pattern as a mask transferability without defects such as defects. Further, the deterioration of the coverage at the stepped portion that occurs when the insulating film or the wiring material is formed does not occur, and long-term reliability of the device function as a surface emitting thyristor can be expected.

  Here, FIG. 4 shows a cross-sectional view of a surface emitting thyristor formed by a manufacturing process including a diffusion process according to the present invention and an etching process of gate-out etching. In the drawing, the peripheral portion of the gate electrode 94 included in the surface emitting thyristor is not shown. In FIG. 4, the same components as those of the surface emitting thyristor 100 shown in FIG. 3 are denoted by the same reference numerals, and the description of the similar components is omitted. As shown in FIG. 4, it is needless to say that the surface-emitting thyristor having a mesa etching step can improve the light emission efficiency similarly to the surface-emitting thyristor formed by the manufacturing process shown in FIG.

  Next, a manufacturing method and structure of the surface emitting thyristor according to the second embodiment of the present invention will be described.

(Example 2)
FIG. 5 is a diagram showing a method for manufacturing the surface-emitting thyristor of Example 2 according to the present invention. In the figure, the same reference numerals are assigned to the same components as those of the semiconductor laminated structure 110a of the surface emitting thyristor shown in FIG. In this example, in order to manufacture the surface emitting thyristor of Example 2, the steps (a), (b) and (c) shown in FIG. 5 are required, but the step (a) shown in FIG. 5 is required. And (c) are the same as steps (a) and (c) shown in FIG. 3, and the differences will be described.

  Also in this embodiment, first, the high carrier concentration region 111 is formed by diffusing Zn from the upper surface of the n-type semiconductor layer 89 by the impurity diffusion method. By causing the high carrier concentration region 111 to function as a p-type semiconductor layer, a pnpn structure that functions as a surface-emitting thyristor is formed. Further, the high carrier concentration region 112 is formed again so as to overlap a part of the high carrier concentration region 111. The high carrier concentration region 112 also functions as a p-type semiconductor layer, thereby forming a pnpn structure that functions as a surface emitting thyristor together with the high carrier concentration region 111.

  More specifically, in step (b), first, a semiconductor multilayer structure 110b is obtained by a process similar to step (a) shown in FIG. Next, as in step (b) shown in FIG. 3, the high carrier concentration region 111 is formed in the n-type semiconductor 89 of the semiconductor multilayer structure 110b. Next, as a process unique to the present embodiment, the high carrier concentration region 112 is formed again so as to overlap a part of the high carrier concentration region 111. The formation method of the high carrier concentration region 112 is the same as the Zn diffusion method of the high carrier concentration region 111 except for the Zn diffusion time. The Zn diffusion time used for forming the high carrier concentration region 112 was 2.5 hours. It should be noted that as a result of cleaving the semiconductor laminated structure subjected to the diffusion treatment under this condition and observing the diffusion portion by SEM, a high carrier concentration region is formed in the portion from the surface to a depth of 0.3 μm by the diffusion treatment of the high carrier concentration region 111 It has been confirmed that a high carrier concentration region is formed in a portion from the surface to about 0.6 μm by the diffusion treatment of the high carrier concentration region 112.

  The surface layer portion of the high carrier concentration region 111 has a high concentration, and the contact resistance with the anode electrode 87 is suitably reduced. On the other hand, since the concentration decreases as the diffusion depth of the high carrier concentration region 111 increases, a concentration suitable for exhibiting the thyristor function is obtained near the junction between the n-type semiconductor layer 89 and the high carrier concentration region 111. It is done. That is, the high carrier concentration region 111 functions as a p-type semiconductor layer. Similarly, the high carrier concentration region 112 formed so as to overlap a part of the high carrier concentration region 111 also functions as a p-type semiconductor layer.

  The surface-emitting thyristor manufactured according to FIG. 5 had the same thyristor characteristics as compared with the conventional surface-emitting thyristor in which the anode layer was formed only by the MOCVD method. On the other hand, a reduction in contact resistance between the anode electrode 87 and the high carrier concentration region 111 has been confirmed as an improvement in luminous efficiency. Further, the high carrier concentration region 112 extends in the direction of the cathode electrode 93 than the high carrier concentration region 111, and the injection current from the anode electrode 87 has a high carrier concentration region 112 having a high carrier concentration and a low resistance value. To the cathode electrode 93. Therefore, the emission center also moves from directly below the anode electrode 87 toward the high carrier concentration region 112 having a high current density.

  As a result, according to the present embodiment, the resistance value of the contact resistance is reduced by forming the anode electrode in the portion where the carrier concentration is high, and the light emission center moves to a region where light shielding by the anode electrode 87 does not occur. Therefore, the luminous efficiency is synergistically improved. Compared with the conventional surface-emitting thyristor, it can be confirmed that the ratio is 1.5 times in this embodiment. Further, preferably, the high carrier concentration region 112 is formed so as not to be separated from the high carrier concentration region 111. Further, preferably, the center position of the anode electrode 87 is formed at a position away from the center position of the high carrier concentration region 112. That is, the distance between the center position of the anode electrode 87 and the center position of the high carrier concentration region 111 having a small thickness is between the center position of the anode electrode 87 and the center position of the high carrier concentration region 112 having a large thickness. It is preferable to form the anode electrode 87 at a position shorter than this distance, whereby a surface-emitting thyristor having a high luminous efficiency as described with reference to FIG. 2 can be configured.

  In addition, preferably, the luminous efficiency can be further improved by making the impurity concentration of the high carrier concentration region 112 higher than the impurity concentration of the high carrier concentration region 111.

  In addition, the present embodiment includes all the advantages described in the first embodiment. For example, in the structure of the second embodiment, no mesa-etching step is generated since no gate etching is required. As a result, the insulating film 86 and the wirings 82a and 82b can be formed on a flatter surface than the conventional pnpn structure, and a wiring pattern having good mask transferability without defects such as defects can be formed. Further, the deterioration of the coverage at the stepped portion that occurs when the insulating film or the wiring material is formed does not occur, and long-term reliability of the device function as a surface emitting thyristor can be expected.

  6A and 6B are cross-sectional views of a surface emitting thyristor having a mesa-type pnpn structure as an embodiment different from the structure shown in FIG. In FIG. 6A, the same components as those of the surface-emitting thyristor shown in FIG. 5 are denoted by the same reference numerals, and the description of the similar components is omitted. Although FIG. 5 shows that the high carrier concentration region 112 is formed inside the high carrier concentration region 111, the light emission center (see FIG. 2) of the light emission region Lc is shielded from the anode electrode 87 as shown in FIG. 6A. If not, the high carrier concentration region 112 may be formed outside the high carrier concentration region 111. Alternatively, as shown in FIG. 6B, if the light emission center of the light emitting region Lc (see FIG. 2) is not completely shielded by the anode electrode 87, the high carrier concentration region 112 is placed under the anode electrode 87. Needless to say, even if the portion is formed, the luminous efficiency can be improved similarly.

  As yet another embodiment, FIG. 7 shows a cross-sectional view of a surface emitting thyristor formed by a manufacturing process including a diffusion process according to the present invention and an etching process for gate-out etching. In FIG. 7, the same components as those of the surface emitting thyristor shown in FIG. 5 are denoted by the same reference numerals, and the description of the same components is omitted. As shown in FIG. 7, it goes without saying that the effect of improving the light emission efficiency can be obtained even in the structure having undergone the conventional gate-etching etching process.

  As yet another embodiment, FIG. 8 shows a cross-sectional view of a surface emitting thyristor formed by a manufacturing process including a diffusion process according to the present invention and an etching process of gate-out etching. In FIG. 8, the same components as those of the surface emitting thyristor shown in FIG. 7 are denoted by the same reference numerals, and the description of the same components is omitted. In FIG. 8, the uppermost layer for forming the high carrier concentration region 111 functioning as a p-type semiconductor layer is an undoped semiconductor layer 114 (hereinafter referred to as an undoped semiconductor layer) instead of the p-type semiconductor layer 88 shown in FIG. Form. Further, the high carrier concentration region 112 is formed so as to reach the n-type semiconductor layer 89.

  Thereby, a pnpn structure that functions as a surface emitting thyristor can be formed. In the structure shown in FIG. 8, since the conductivity of the undoped semiconductor layer 114 is low, an injection current can be reliably passed through the high carrier concentration regions 111 and 112. Therefore, the light emission efficiency can be further increased as compared with the structure shown in FIG.

  As yet another embodiment, FIG. 9 shows a cross-sectional view of a surface emitting thyristor formed by a manufacturing process including a diffusion process according to the present invention and an etching process of gate-out etching. In FIG. 9, the same components as those of the surface-emitting thyristor shown in FIG. 8 are denoted by the same reference numerals, and the description of the same components is omitted. In the structure shown in FIG. 8, in order to obtain desired thyristor characteristics, the diffusion conditions for forming the high carrier concentration region 112 must be adjusted. However, in the structure shown in FIG. 9, first, a pnpn structure capable of obtaining desired thyristor characteristics is formed in advance by the above-described MOCVD method or the like, and then an undoped semiconductor layer 116 is formed as an upper layer of the pnpn structure.

  Thereby, while having a pnpn structure capable of obtaining desired thyristor characteristics, the light emission efficiency can be further increased as compared with the structure shown in FIG. Here, the undoped semiconductor layer 116 only needs to function as a layer that inhibits current flow regardless of the thyristor characteristics, and instead of the undoped semiconductor layer, a semiconductor layer having a shape opposite to that of the high carrier concentration regions 111 and 112 ( In the figure, since the high carrier concentration region 111 functions as a p-type semiconductor layer, it can be an n-type semiconductor layer.

  As yet another embodiment, FIG. 10 shows a cross-sectional view of a surface emitting thyristor formed by a manufacturing process including a diffusion process according to the present invention and an etching process of gate-out etching. In FIG. 10, the same components as those of the surface emitting thyristor shown in FIG. 9 are denoted by the same reference numerals, and the description of the same components is omitted. In the structure shown in FIG. 9, light must be emitted to the outside through the uppermost layer region (that is, the region of the undoped semiconductor layer 116 around the high carrier concentration region 116) that is not directly related to the thyristor characteristics. Therefore, light absorption occurs in this region, resulting in a loss of light emission efficiency. However, in the structure shown in FIG. 10, first, a pnpn structure capable of obtaining desired thyristor characteristics is formed in advance by the above-described MOCVD method or the like, and then an undoped semiconductor layer 117 is formed as an upper layer of the pnpn structure. Next, after removing a portion of the light extraction portion unrelated to the thyristor function by etching, a high carrier concentration region 111 (a high concentration p-type semiconductor layer in the figure) is formed by an impurity diffusion method or the like.

  Thereby, while having a pnpn structure capable of obtaining desired thyristor characteristics, the light emission efficiency can be further increased as compared with the structure shown in FIG. Here, the undoped semiconductor layer 117 only needs to function as a layer that inhibits current flow regardless of the thyristor characteristics, and instead of the undoped semiconductor layer, a semiconductor layer having a shape opposite to that of the high carrier concentration region 111 is used. Or a low-concentration p-type semiconductor layer. In addition, FIG. 10 has an advantage that the diffusion process may be performed only once in order to obtain the high carrier concentration region 111. However, if desired, the high carrier concentration region 112 can be formed as described above.

  In the second embodiment, the high carrier concentration region 111 and the high carrier concentration region 112 are preferably formed so as not to be separated. Further, the carrier concentration in the high carrier concentration region 112 is set higher than the carrier concentration in the high carrier concentration region 111. Preferably, the high carrier concentration region 111 is formed at least directly below a position close to the three sides of the electrode 87. As a result, the current density decreases at a position directly below the electrode 87, and the current density can be increased immediately below a position near the side of the electrode 87. In addition, since the structure has a light emitting region around the electrode 87, it is preferable to reduce the resistance value due to ohmic contact of the electrode 87 and to shorten the current path flowing between the electrodes while avoiding the influence of light shielding by the electrode 87. Can be realized.

  Next, a manufacturing method and structure of the surface-emitting thyristor according to the third embodiment of the present invention will be described.

(Example 3)
In this embodiment, unlike in Embodiments 1 and 2, a manufacturing method and structure of a surface emitting thyristor that improves the light emission efficiency without forming a high-concentration semiconductor layer directly below the anode electrode 87 will be described.

  FIG. 11 is a diagram showing a method for manufacturing the surface-emitting thyristor of Example 3 according to the present invention. In the figure, the same reference numerals are assigned to the same components as those of the surface emitting thyristor shown in FIG.

First, in step (a), an n-type semiconductor layer 91 (film thickness 0.5 μm, impurity concentration 4 × 10 ¹⁷ cm ^{− is} formed on an n-type semiconductor substrate 92 (impurity concentration 1 × 10 ¹⁸ cm ⁻³ ) by MOCVD. ³ ), p-type semiconductor layer 90 (film thickness 0.5 μm, impurity concentration 1 × 10 ¹⁷ cm ⁻³ ), n-type semiconductor layer 89 (film thickness 1.0 μm, impurity concentration 4 × 10 ¹⁷ cm ⁻³ ), and p-type A semiconductor layer 88 (film thickness: 1.0 μm, impurity concentration: 1 × 10 ¹⁸ cm ⁻³ ) is formed. Thereby, the semiconductor stacked structure 110b is formed. Further, the anode electrode 87 is formed on the semiconductor multilayer structure 110b by vapor deposition and lift-off method.

Next, in step (b), first, using the anode electrode 87 as a diffusion mask, Zn is diffused over the entire surface of the semiconductor multilayer structure 110b to form a high carrier concentration region 118 that functions as a high concentration p-type semiconductor layer. . More specifically, a semiconductor laminated structure 110b and ₂ g of Zn ₃ As grains serving as a diffusion source are placed in a quartz ampule, and the inside of the ampule is evacuated to 1 × 10 ⁻⁶ Torr (= 0.133322 mPa). And seal the ampoule tube by welding. Next, heat treatment is performed in a diffusion furnace at 570 ° C. for 1 hour. After cooling for 1 hour after the heat treatment, the semiconductor multilayer structure 110b is taken out from the ampoule. Thereby, a high carrier concentration region 118 is formed. Even after this diffusion process, the thyristor characteristics did not change from the characteristic values when the diffusion process was not performed, so that the pnpn basic structure was not destroyed.

  Next, in step (c), the gate electrode 94 is formed after the gate extraction etching, as in the conventional manufacturing process. The right view showing step (c) shows a plan view of the light emitting portion La of the surface light emitting thyristor corresponding to the cross section of C-C ′ shown in the left view. From the figure, it can be seen that a high carrier concentration region 118 is formed over the entire light emitting portion of the surface emitting thyristor other than the anode electrode 87.

  Next, in step (d), an insulating film 86 is formed as in the conventional manufacturing process, and contact holes Ch and Al wirings 82a and 82b are formed. Thereby, the surface emitting thyristor of the present embodiment can be manufactured. The right view showing step (d) shows a plan view of the light emitting portion La of the surface light emitting thyristor corresponding to the cross section of D-D ′ shown in the left view. From the figure, it can be seen that the anode electrode 87 and the wiring 82a shield the light from the light emitting portion La of the surface light emitting thyristor.

  As a result of cleaving the semiconductor laminated structure 110b subjected to the diffusion treatment under the conditions of this example and observing the diffusion portion by SEM, it was confirmed that a high carrier concentration region 118 was formed in a portion from the surface to a depth of 0.3 μm. ing.

  Here, in the high carrier concentration region 118, the region of the high carrier concentration region enters in the direction below the anode electrode 87 by a distance of 0.2 to 0.5 μm. Therefore, the electrical connection between the anode electrode 87 and the high carrier concentration region 118 is very good. By forming the high carrier concentration region 118, the contact resistance between the anode electrode 87 and the p-type semiconductor layer 88 can be reduced as compared with that before the diffusion process. Also, the injection current from the anode electrode 87 is induced from the region immediately below the anode electrode 87 to the region of the high carrier concentration region 118 and reaches the cathode electrode 93. That is, the path reaching the cathode electrode 93 via the high carrier concentration region 118 is the main energization path for the injection current.

  According to the surface emitting thyristor of the present embodiment, the emission center can be moved from the region directly below the anode electrode 87 to the region that is not shielded by the anode electrode 87. In addition, it has been confirmed that this example is 1.25 times larger than that of the conventional surface emitting thyristor.

  Next, a manufacturing method and structure of the surface-emitting thyristor according to the fourth embodiment of the present invention will be described.

(Example 4)
In this example, unlike Examples 1 and 2, a method for manufacturing a surface-emitting thyristor that improves luminous efficiency different from Example 3 without forming a high-concentration semiconductor layer directly under the anode electrode 87, and its method The structure will be described.

  In Example 3, an extremely simple manufacturing method in which one step of the diffusion process (step (b) shown in FIG. 11) is added to the conventional manufacturing process, that is, a high carrier concentration around the anode electrode 87 is obtained. A method for manufacturing a surface-emitting thyristor having the above-described structure is shown. The surface-emitting thyristor formed by the manufacturing method of Example 3 has the advantage that it is extremely simple in terms of the manufacturing process on the one hand, but on the other hand, it is entirely applied to the surface layer other than just below the anode electrode 87 into which current is injected. In addition, since a high concentration and high carrier concentration region is formed, an injection current is induced just below the wiring 82a, and there is room for further improvement from the viewpoint of increasing the light emission efficiency.

  Therefore, in Example 4, a method of manufacturing a surface-emitting thyristor that further improves the light emission efficiency and its structure will be described. FIG. 12 is a diagram showing a method for manufacturing the surface-emitting thyristor of Example 4 according to the present invention. In the figure, the same reference numerals are assigned to the same components as those of the surface emitting thyristor shown in FIG. 11, and the description of the same components is omitted.

  First, in step (a), as in step (a) of the third embodiment, a semiconductor multilayer structure 110b having an anode electrode 87 is formed.

  Next, in step (b), first, in order to form a high carrier concentration region 119 that partially functions as a high concentration p-type semiconductor layer around the anode electrode 87, the diffusion mask 120 is patterned with SiN. Here, a diffusion window Dc for forming a high carrier concentration region 119, which will be described later, is formed so as to be in contact with the three sides of the rectangular anode electrode 87, excluding a portion that is later covered with the wiring 82a (FIG. (See the figure on the right in step (b) of 12). Next, a high carrier concentration region 119 is formed by the same method as in the third embodiment. Even after this diffusion process, the thyristor characteristics did not change from the characteristic values when the diffusion process was not performed, so that the pnpn basic structure was not destroyed.

  Next, in step (c), SiN used to form the diffusion window Dc is removed by dry etching with CF4 gas.

  Next, in step (d), the gate electrode 94 is formed after the gate extraction etching as in the conventional manufacturing process. The right view showing step (d) shows a plan view of the light emitting portion La of the surface light emitting thyristor corresponding to the cross section E-E 'shown in the left view. From this figure, it can be seen that the high carrier concentration region 119 is formed so as to be in contact with the three sides of the rectangular anode electrode 87.

  Next, in step (e), as in the conventional manufacturing process, an insulating film 86 is formed, and contact holes Ch and Al wirings 82a and 82b are formed. Thereby, the surface emitting thyristor of the present embodiment can be manufactured. The right view showing step (e) shows a plan view of the light emitting portion La of the surface light emitting thyristor corresponding to the section F-F ′ shown in the left view. From this figure, it can be seen that the high carrier concentration region 119 is not formed in a region where light from the light emitting portion La of the surface light emitting thyristor is shielded by at least the anode electrode 87 and the wiring 82a.

  As a result of cleaving the semiconductor laminated structure 110b subjected to the diffusion treatment under the conditions of this example and observing the diffusion portion by SEM, it was confirmed that a high carrier concentration region 118 was formed in a portion from the surface to a depth of 0.3 μm. ing.

  According to the surface emitting thyristor of the present embodiment, the emission center can be moved from directly below the electrode that prevents light emission to the direction of a high carrier concentration region that is not shielded from light. Further, unlike the third embodiment, since the high carrier concentration region 119 is not formed immediately below the wiring 82a, the light emission efficiency can be further improved as compared with the surface light emitting thyristor of the third embodiment. Compared with the conventional surface-emitting thyristor, it can be confirmed that the ratio is 1.5 times in this embodiment.

  In Example 4, it has been described that the high carrier concentration region 119 is formed so as to be in contact with three sides of the rectangular anode electrode 87, but the high carrier is provided so as to be in contact with one side or two sides of the rectangular anode electrode 87. It goes without saying that the concentration region 119 can also be formed. That is, by forming the high carrier concentration region 119 with a desired width and position, the emission center can be suitably moved as required.

  In Examples 1 to 4 described above, Zn was used as an impurity for forming a high carrier concentration region, but the same effect can be obtained with Be, Mg, Mn, or the like. Further, a plurality of diffusion processes in which at least one kind of impurity is sequentially diffused may be employed.

  In Examples 1 to 4 described above, the thermal diffusion method is used as the method for forming the high carrier concentration region, but an ion implantation method may be used.

  In Examples 1 to 4 described above, the surface-emitting thyristor having the pnpn structure has been described. However, the surface-emitting thyristor having the npnp structure may be used. In a surface emitting thyristor having an npnp structure, a high carrier concentration region is formed in the uppermost n-type semiconductor layer, and Si, Ge, Sn, S, Se, Te, or the like is used as an impurity for the high carrier concentration region. Further, a plurality of diffusion processes in which at least one kind of impurity is sequentially diffused may be employed. In this case, instead of using the thermal diffusion method as a method for forming the high carrier concentration region, an ion implantation method can be used.

  In the above-described Examples 1 to 4, the technical elements can be suitably combined. For example, the plurality of high carrier concentration regions 111 and 112 as described in the second embodiment can be applied to the surface emitting thyristors described in the other embodiments.

  Furthermore, the present invention can be applied not only to a surface light emitting thyristor but also to a surface light emitting diode, and can be generally applied to a surface light emitting element.

  The present invention includes not only the purpose of reducing the contact resistance of the electrode for improving the luminous efficiency but also the purpose of reducing the contact resistance of the electrode required for maintaining the thyristor characteristics. Should be understood. Therefore, it can also be applied to applications for improving the stable operation of the surface emitting thyristor.

  Next, an embodiment of an image reading apparatus using the surface light emitting element according to the present invention will be described.

(Image reader)
FIG. 13 is a schematic view of an image reading apparatus using the surface light emitting device according to the present invention. An image scanner 200, which is one of the image reading devices, includes a light source 51 having a plurality of surface light emitting elements 100 according to the present invention for irradiating light on a document G placed on a document table 50, and reflected light from the document G. It includes an image sensor 30 that reads image information, a drive source 230 that scans an original, and a control circuit unit 208 that controls the image scanner.

  The image sensor 30 has an erecting equal-magnification lens array that forms an image of reflected light from the original on the light receiving element array 20. The light source 51 is constituted by a light emitting element array having a surface light emitting element according to the present invention.

  The control circuit unit 208 is provided in the scanning control unit 201 that controls the driving of the driving source 230, the lighting control unit 202 that controls the light emission of the light source 51 in the image sensor 30, and the image sensor substrate 20 in the image sensor 30. A light receiving element array 20 receives reflected light from the original G and controls a processing unit that performs photoelectric conversion, and an image processing unit that processes photoelectrically converted image information obtained by the sensor driving control unit 203. 204, an interface unit 205 that outputs image-processed image information to an external device, a memory unit 207 that stores programs necessary for image processing, an interface, and various controls, a scanning control unit 201, and a lighting control unit 202 A sensor drive control unit 203, an image processing unit 204, an interface unit 205, and a central processing unit (CPU) 206 for controlling the memory 207.

  In the image reading apparatus shown in FIG. 13, the image sensor 30 is fixed and the original G itself is scanned to read the image information of the original, but the original G is fixed and the image sensor 30 is moved in the sub-scanning direction. By scanning in the (Y direction in the figure), it is also possible to read the image information of the document.

  Next, an embodiment of an image writing apparatus using the surface light emitting device according to the present invention will be described.

(Image writing device)
FIG. 14 is a schematic view of a copying machine which is one of image writing apparatuses using a surface light emitting device according to the present invention. The same components as those in FIG. 13 are denoted by the same reference numerals, and the same descriptions are omitted.

  In the copying machine shown in FIG. 14, the optical writing head 40 includes a light emitting element array 41 having a plurality of surface light emitting elements 100 according to the present invention. Based on the image information from the image sensor 30, the light emitting element array 41 in the optical writing head 40 is turned on and irradiated to the photosensitive drum 302. On the surface of the cylindrical photosensitive drum 302, a photoconductive material (photosensitive member) such as amorphous Si is formed. This photosensitive drum rotates at the printing speed. The photosensitive member surface of the rotating photosensitive drum is uniformly charged by the charger 304. Then, the optical writing head 40 irradiates the photosensitive member with the light of the dot image to be printed, and neutralizes the charging where the light hits. Subsequently, the developing device 306 applies toner to the photoconductor according to the charged state on the photoconductor. Then, the toner is transferred onto the conveyed paper 312 by the transfer device 308. The paper 312 is heated and fixed by the fixing device 314, and the image information of the original G is finally copied onto the paper 312. On the other hand, the photosensitive drum 302 that has been transferred is neutralized over the entire surface by the erasing lamp 318, and the remaining toner is removed by the cleaner 320.

  Although FIG. 14 has been described as a copying machine, the configuration of the apparatus is almost the same for a multifunction machine such as a facsimile or a multifunction printer.

  Although the present invention has been described as a representative example in the embodiments described above, it will be apparent to those skilled in the art that many changes and substitutions can be made within the spirit and scope of the present invention. Accordingly, the invention should not be construed as limited by the embodiments described above, but only by the claims.

  According to the present invention, the luminous efficiency of the surface light emitting device can be further improved, and includes an image scanner, a facsimile machine, a copying machine, or a multifunction printer such as a multifunction printer using an image sensor having the surface light emitting device. It is useful in an image reading apparatus or an image writing apparatus including an optical writing head having a surface light emitting element.

It is a top view which shows an example of the surface emitting thyristor by this invention. It is a sectional view of a conventional surface emitting thyristor having a mesa type pnpn structure. FIG. 3 is a diagram showing a method for manufacturing the surface-emitting thyristor of Example 1 according to the present invention. It is sectional drawing which shows an example of the surface emitting thyristor formed by the manufacturing process including the diffusion process by this invention, and the etching process of gate extraction etching. FIG. 10 is a diagram showing a method for manufacturing the surface-emitting thyristor of Example 2 according to the present invention. FIG. 2 is a cross-sectional view showing an example of a surface emitting thyristor having a mesa pnpn structure according to the present invention. FIG. 2 is a cross-sectional view showing an example of a surface emitting thyristor having a mesa pnpn structure according to the present invention. It is sectional drawing which shows an example of the surface emitting thyristor formed by the manufacturing process including the diffusion process by this invention, and the etching process of gate extraction etching. It is sectional drawing which shows an example of the surface emitting thyristor formed by the manufacturing process including the diffusion process by this invention, and the etching process of gate extraction etching. It is sectional drawing which shows an example of the surface emitting thyristor formed by the manufacturing process including the diffusion process by this invention, and the etching process of gate extraction etching. It is sectional drawing which shows an example of the surface emitting thyristor formed by the manufacturing process including the diffusion process by this invention, and the etching process of gate extraction etching. FIG. 10 is a diagram showing a method for manufacturing the surface-emitting thyristor of Example 3 according to the present invention. FIG. 10 is a diagram showing a method for manufacturing the surface-emitting thyristor of Example 4 according to the present invention. 1 is a schematic view of an image reading apparatus using a surface light emitting device according to the present invention. 1 is a schematic view of a copying machine which is one of image writing apparatuses using a surface light emitting device according to the present invention. It is a top view which shows the arrangement | sequence state of the light emitting element array chip | tip using a surface emitting thyristor. It is an enlarged view of a light emitting element array chip using a surface emitting thyristor. It is an enlarged view of one surface emitting thyristor in the light emitting element array chip. It is a sectional view of a conventional surface emitting thyristor having a mesa type pnpn structure. It is sectional drawing of the conventional surface emitting thyristor showing a mode that an electric current flows in the surface emitting thyristor of a pnpn structure.

Explanation of symbols

41 Light Emitting Element Array
51 Light source
80 Light Emitting Element Array Chip
82 Wiring
82a wiring
82b wiring
86 Insulating film
87 Anode electrode
88 p-type semiconductor layer
89 n-type semiconductor layer
90 p-type semiconductor layer
91 n-type semiconductor layer
92 n-type semiconductor substrate
93 Cathode electrode
94 Gate electrode
100 surface emitting thyristor
111 High carrier concentration region
112 High carrier concentration region
114 High carrier concentration region
116 High carrier concentration region
117 High carrier concentration region
118 High carrier concentration region
119 High carrier concentration region

Claims (14)

A first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from said first conductivity type, a third semiconductor layer of the first conductivity type, said first A part of the third semiconductor layer, and a part of the fourth semiconductor layer includes the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer. A semiconductor multilayer structure in which at least a semiconductor layer and a fifth semiconductor layer having a lower conductivity than any of the fourth semiconductor layers are stacked ;
A first electrode formed on the fifth semiconductor layer;
A second electrode formed on the first semiconductor layer side ,
A surface emitting thyristor that emits light from a light emitting surface of the semiconductor multilayer structure by a current flowing between the first electrode and the second electrode;
The region of the light emitting surface is a region where the fifth semiconductor layer of the fourth semiconductor layer is not provided,
At a position directly below the first electrode, the first electrode is provided in a range that does not reach the fourth semiconductor layer, and extends to a side surface of the fifth semiconductor layer so as to be in contact with a region of the light emitting surface. A first high carrier concentration region having a carrier concentration higher than that of the fourth semiconductor layer is provided in the fifth semiconductor layer;
In the region of the light emitting surface, a second high carrier concentration higher than that of the fourth semiconductor layer is connected to the first high carrier concentration region in a range not reaching the third semiconductor layer. A surface-emitting thyristor provided with a carrier concentration region . Said first high carrier concentration regions, the first a position away from directly below the center position of the electrode, the first claim electrode is formed at least at a position directly below the sides near the 1 The surface emitting thyristor described in 1. It said fifth semiconductor layer, the surface light-emitting thyristor according to claim 1 or 2 which is a semiconductor layer of undoped. Said fifth semiconductor layer, said a first conductivity type and the semiconductor layer of the same conductivity type, and, according to claim 1 or 2 consisting of a lower carrier concentration than the carrier concentration of said fourth semiconductor layer Surface emitting thyristor . It said fifth semiconductor layer, the surface light-emitting thyristor according to claim 1 or 2, wherein the first conductivity type and a semiconductor layer of a different conductivity type. The surface light emission according to claim 1, wherein the second high carrier concentration region includes a plurality of high carrier concentration regions, and each of the plurality of high carrier concentration regions is formed so as not to be separated. Thyristor . Each of the plurality of high carrier concentration regions is formed as a high carrier concentration region having a different thickness,
Among the high carrier concentration regions having different thicknesses, the impurity concentration of the high carrier concentration region having a large thickness is higher than the impurity concentration of the high carrier concentration region having a small thickness,
The distance between the center position of the first electrode and the center position of the high carrier concentration region with a small thickness is the center position of the first electrode and the center position of the high carrier concentration region with a large thickness. The surface emitting thyristor according to claim 6 , wherein the first electrode is formed at a position shorter than a distance between the first electrode and the second electrode. A light source for irradiating light on a document placed on a document table;
A plurality of light receiving elements that receive reflected light from the document irradiated by the light source and read image information of the document;
An erecting equal-magnification lens array that forms an image of reflected light from the original on the plurality of light receiving elements,
Said light source, an image reading apparatus having a surface light-emitting thyristor according to any one of claims 1-7. A light emitting element array having a plurality of light emitting elements;
A photosensitive drum on which image information is written based on light emission of the light emitting element array;
An erecting equal-magnification lens array that images light emitted from the light-emitting element array on the photosensitive drum,
Wherein the plurality of light emitting elements, an image writing apparatus having a surface light-emitting thyristor according to any one of claims 1-7. A method of manufacturing a surface-emitting thyristor that emits light from a light emitting surface of a semiconductor stacked layer in which a plurality of semiconductor layers are stacked by current injected from a first electrode to a second electrode,
(A) a first manufacturing process, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from said first conductivity type, the first conductivity type The third semiconductor layer, the fourth semiconductor layer of the second conductivity type, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer. Forming a semiconductor multilayer structure by laminating at least a fifth semiconductor layer having a lower conductivity than any of the above ;
(B) Etching from the fifth semiconductor layer side until the third semiconductor layer is exposed so as to separate the region where the surface-emitting thyristor is formed in the semiconductor multilayer structure formed in step (a). And steps to
(C) The fifth semiconductor layer side until the fourth semiconductor layer is exposed so that the region of the light emitting surface is formed in the region where the surface emitting thyristor formed in step (b) is formed. Etching from,
( D ) forming the first electrode on the fifth semiconductor layer in the semiconductor multilayer structure formed by step (a);
( E ) forming the second electrode on the first semiconductor layer side in the semiconductor multilayer structure formed by step (a);
( F ) As a second manufacturing process different from the first manufacturing process, a first high carrier concentration region is formed in step (c) in the fifth semiconductor layer formed in step (a). Forming a second high carrier concentration region in the region of the light exit surface ,
The first high carrier concentration region formed in the step ( f ) is provided in a range not reaching the fourth semiconductor layer at a position directly below the first electrode, and the fifth semiconductor Formed on the side surface of the layer so as to be in contact with the region of the light emitting surface,
A method of manufacturing a surface-emitting thyristor , wherein the second high carrier concentration region is provided in a range not reaching the third semiconductor layer and is connected to the first high carrier concentration region . The first high carrier concentration region formed in the step ( f ) is a position away from directly below the center position of the first electrode, and is a position immediately below the side of the first electrode. The method for producing a surface-emitting thyristor according to claim 10 , wherein the surface-emitting thyristor is formed at least on the substrate . The method for manufacturing a surface-emitting thyristor according to claim 10 or 11 , wherein the first manufacturing process is an MOCVD method or an MBE method. The method for manufacturing a surface-emitting thyristor according to claim 10, wherein the second manufacturing process is an impurity diffusion method or an ion implantation method. The second high carrier concentration region formed in the second manufacturing process is formed as a plurality of high carrier concentration regions by a plurality of diffusion processes for sequentially diffusing the same type of impurities , and the plurality of high carrier concentration regions are formed. The method for manufacturing a surface-emitting thyristor according to claim 10 , wherein each of the carrier concentration regions is formed so as not to be separated.

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