JP4966791B2 - 光半導体装置の製造方法 - Google Patents
光半導体装置の製造方法 Download PDFInfo
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- JP4966791B2 JP4966791B2 JP2007229035A JP2007229035A JP4966791B2 JP 4966791 B2 JP4966791 B2 JP 4966791B2 JP 2007229035 A JP2007229035 A JP 2007229035A JP 2007229035 A JP2007229035 A JP 2007229035A JP 4966791 B2 JP4966791 B2 JP 4966791B2
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- Prior art keywords
- light receiving
- receiving element
- resin
- substrate
- element chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Description
3,15,16…基板側電極、 7,14…光入射孔、
10R…受光面、 12…集合基板、
18…受光素子側電極、 20…樹脂シート、
22…平面プレス板。
Claims (1)
- 複数の受光素子を実装するため各受光素子チップに対応した光入射孔が形成されかつ電極が設けられた集合基板を用意し、この集合基板の各光入射孔に上記受光素子チップの受光面側を配置しながら、この受光素子側電極を上記集合基板の裏面側電極にバンプ接続するチップ接続工程と、
このチップ接続工程で得られた受光素子チップ接続基板の上記裏面側へ半硬化状態の樹脂シートを配置し、該樹脂シートが軟化する温度に加熱した平面プレス板により減圧状態で上記樹脂シートの全体を上記受光素子チップ接続基板側へ加圧し、軟化した樹脂を各受光素子チップと上記集合基板との間へ入り込ませながら該受光素子チップ接続基板へ密着させる加圧工程と、
上記平面プレス板により上記樹脂シートへの加圧状態を保持しながら、硬化用温度に過熱して樹脂を硬化させ、上記受光素子チップ接続基板の裏面樹脂全体をフラットに形成する硬化工程と、を備え、
上記加圧工程及び硬化工程により上記複数の受光素子チップのそれぞれを上記集合基板に樹脂封止し、この樹脂封止された集合基板を切断することにより個片化され、上記光入射孔には樹脂が配置されない受光素子を得ることを特徴とする光半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007229035A JP4966791B2 (ja) | 2007-09-04 | 2007-09-04 | 光半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007229035A JP4966791B2 (ja) | 2007-09-04 | 2007-09-04 | 光半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009064813A JP2009064813A (ja) | 2009-03-26 |
JP4966791B2 true JP4966791B2 (ja) | 2012-07-04 |
Family
ID=40559181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007229035A Active JP4966791B2 (ja) | 2007-09-04 | 2007-09-04 | 光半導体装置の製造方法 |
Country Status (1)
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JP (1) | JP4966791B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5977711B2 (ja) * | 2013-05-13 | 2016-08-24 | アオイ電子株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001250889A (ja) * | 2000-03-06 | 2001-09-14 | Matsushita Electric Ind Co Ltd | 光素子の実装構造体およびその製造方法 |
JP3537400B2 (ja) * | 2000-03-17 | 2004-06-14 | 松下電器産業株式会社 | 半導体内蔵モジュール及びその製造方法 |
JP4113722B2 (ja) * | 2001-04-18 | 2008-07-09 | 松下電器産業株式会社 | 半導体モジュールとその製造方法 |
JP5035580B2 (ja) * | 2001-06-28 | 2012-09-26 | ナガセケムテックス株式会社 | 弾性表面波デバイスおよびその製法 |
JP2003032061A (ja) * | 2001-07-16 | 2003-01-31 | Toshiba Corp | 弾性表面波装置の製造方法 |
JP4603231B2 (ja) * | 2002-07-19 | 2010-12-22 | パナソニック電工株式会社 | 火災感知器 |
JP3702961B2 (ja) * | 2002-10-04 | 2005-10-05 | 東洋通信機株式会社 | 表面実装型sawデバイスの製造方法 |
JP2005286284A (ja) * | 2004-02-03 | 2005-10-13 | Sony Chem Corp | 機能素子実装モジュール並びに光機能素子実装モジュール及びその製造方法 |
JP4778370B2 (ja) * | 2005-11-09 | 2011-09-21 | アオイ電子株式会社 | 電子部品の製造方法 |
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JP2009064813A (ja) | 2009-03-26 |
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